Product Datasheet Search Results:
- BSC077N12NS3G
- Infineon Technologies Ag
- 13.4 A, 120 V, 0.0077 ohm, N-CHANNEL, Si, POWER, MOSFET
- BSC077N12NS3GATMA1
- Infineon Technologies
- MOSFET N-Ch 120V 98A TDSON-8 OptiMOS 3
Product Details Search Results:
Infineon.com/BSC077N12NS3G
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"330 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"13.4 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0077 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"392 A","Channel Type":"N-CHANNEL","FET T...
1597 Bytes - 09:53:49, 17 December 2024
Infineon.com/BSC077N12NS3GATMA1
{"Product Category":"MOSFET","Series":"BSC077N12","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...
1121 Bytes - 09:53:49, 17 December 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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BSC077N12NS3G.pdf | 0.64 | 1 | Request |