Product Datasheet Search Results:
- BSC050N03LSG
- Infineon Technologies
- BSC050N03LSG
- BSC050N03LSGATMA1
- Infineon Technologies
- MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
- BSC050N03LSGXT
- Infineon Technologies Ag
- 18 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Infineon.com/BSC050N03LSG
{"Terminal Finish":"MATTE TIN","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"35 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0075 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"320 A",...
1649 Bytes - 08:09:02, 30 November 2024
Infineon.com/BSC050N03LSGATMA1
{"Product Category":"MOSFET","Series":"BSC050N03","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...
1126 Bytes - 08:09:02, 30 November 2024
Infineon.com/BSC050N03LSGXT
{"Terminal Finish":"MATTE TIN","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"35 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0075 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"320 A","Channel Type":"N-CHANNEL"...
1606 Bytes - 08:09:02, 30 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
BSC050N03LSG.pdf | 0.67 | 1 | Request |