Product Datasheet Search Results:
12 Pages, 1542 KB, Original- BSC010NE2LSI
- Infineon Technologies
- MOSFET N-CH 25V 38A TDSON-8 - BSC010NE2LSI
14 Pages, 1790 KB, Original- BSC010NE2LSIATMA1
- Infineon Technologies
- MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
Product Details Search Results:
Infineon.com/BSC010NE2LSI
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Online Catalog":"N-Channel Logic Level Gate FETs","Product Photos":"8-PowerTDFN","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"4200pF @ 12V","Series":"OptiMOS\u2122","Standard Package":"5,000","Supplier Device Package":"PG-TDSON-8","Datasheets":"BSC010NE2LSI","Rds On (Max) @ Id, Vgs":"1.05 mOhm @ 30A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)...
1846 Bytes - 17:52:38, 30 December 2024
Infineon.com/BSC010NE2LSIATMA1
{"Product Category":"MOSFET","Series":"BSC010NE2","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...
1114 Bytes - 17:52:38, 30 December 2024
Infineon.com/BSC010NE2LSIATMA1/BKN
{"Category":"MOSFET","Maximum Drain Source Voltage":"25 V","Typical Turn-Off Delay Time":"32 ns","Description":"Value","Maximum Continuous Drain Current":"38 A","Package":"8TDSON EP","Typical Turn-On Delay Time":"6.3 ns","Mounting":"Surface Mount","Typical Rise Time":"6.2 ns","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"1.05@10V mOhm","Maximum Gate Source Voltage":"20 V","Manufacturer":"Infineon Technologies","Typical Fall Time":"4.6 ns"}...
1582 Bytes - 17:52:38, 30 December 2024
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSC010NE2LSI.pdf | 1.53 | 1 | Request |
