Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"225 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"32 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0017 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"400 A","Channel Type":"N-CHANNEL","FET Technolo...

{"Category":"MOSFET","Maximum Drain Source Voltage":"30 V","Typical Rise Time":"6.4 ns","Typical Turn-Off Delay Time":"35 ns","Description":"Value","Maximum Continuous Drain Current":"32 A","Package":"7WDSON","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"5.8 ns","Channel Mode":"Enhancement","Operating Temperature":"-40 to 150 \u00b0C","RDS-on":"1.7@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"6 ns"}...