Product Datasheet Search Results:
11 Pages, 553 KB, Original- BSB012N03LX3G
- Infineon Technologies Ag
- 39 A, 30 V, 0.0012 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Infineon.com/BSB012N03LX3G
{"Terminal Finish":"MATTE TIN","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"2.8 W","Avalanche Energy Rating (Eas)":"290 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"39 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0012 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"400 A","Cha...
1655 Bytes - 13:23:18, 31 March 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSB012N03LX3G.pdf | 0.54 | 1 | Request |
