Datasheet.Directory

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.4000 W","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Drain Current-Max (ID)":"0.2000 A","Feedback Cap-Max (Crss)":"5 pF","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE S...