Product Datasheet Search Results:

BS107PSM.pdf1 Pages, 63 KB, Scan
BS107PSM
Diodes Incorporated
120 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
BS107PSMTA.pdf1 Pages, 63 KB, Scan
BS107PSMTA
Diodes Incorporated
120 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
BS107PSMTC.pdf1 Pages, 63 KB, Scan
BS107PSMTC
Diodes Incorporated
120 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

Product Details Search Results:

Diodes.com/BS107PSM
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1200 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"23 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"200 V","Transistor App...
1445 Bytes - 01:30:12, 04 October 2024
Diodes.com/BS107PSMTA
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1200 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"23 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"200 V","Transistor App...
1452 Bytes - 01:30:12, 04 October 2024
Diodes.com/BS107PSMTC
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1200 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"23 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"200 V","Transistor App...
1458 Bytes - 01:30:12, 04 October 2024