Product Datasheet Search Results:

BLS3135-50.pdf12 Pages, 61 KB, Original
BLS3135-50
Nxp Semiconductors
TRANSISTOR RF POWER SOT422A - BLS3135-50,114
BLS3135-50,114.pdf12 Pages, 61 KB, Original
BLS3135-50,114
Nxp Semiconductors
TRANSISTOR RF POWER SOT422A - BLS3135-50,114
BLS3135-50 TRAY.pdf12 Pages, 61 KB, Original
BLS3135-50 TRAY
Nxp Semiconductors / Philips Semiconductors
Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 3100 - 3500 MHz; Load power: 50 W; Operating voltage: 40 VDC; Power gain: 8 dB; Pulse width: 100 us
BLS3135-50.pdf12 Pages, 61 KB, Original

Product Details Search Results:

Nxp.com/BLS3135-50,114
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"6A","Frequency - Transition":"3.5GHz","Noise Figure (dB Typ @ f)":"-","Transistor Type":"NPN","Product Photos":"SOT-422A","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"4","Voltage - Collector Emitter Breakdown (Max)":"75V","Supplier Device Package":"CDFM2","Packaging":"Tray","Datasheets":"BLS3135-50","Power - Max":"80W","Gain":"8dB","Package / Case":"SOT-422A","Mounting Type":"Surface Mount","DC Current Gain (...
1530 Bytes - 07:25:02, 05 January 2025

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