Product Datasheet Search Results:
- BLS3135-20
- Nxp Semiconductors
- TRANSISTOR RF POWER SOT422A - BLS3135-20,114
- BLS3135-20,114
- Nxp Semiconductors
- TRANSISTOR RF POWER SOT422A - BLS3135-20,114
- BLS3135-20 TRAY
- Nxp Semiconductors / Philips Semiconductors
- Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 3100 - 3500 MHz; Load power: 20 W; Operating voltage: 40 VDC; Power gain: 8 dB; Pulse width: 100 us
- BLS3135-20
- Philips Semiconductors / Nxp Semiconductors
- Microwave Power Transistor
Product Details Search Results:
Nxp.com/BLS3135-20,114
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"2A","Frequency - Transition":"3.5GHz","Noise Figure (dB Typ @ f)":"-","Transistor Type":"NPN","Product Photos":"SOT-422A","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"4","Voltage - Collector Emitter Breakdown (Max)":"75V","Supplier Device Package":"CDFM2","Packaging":"Tray","Datasheets":"BLS3135-20","Power - Max":"80W","Gain":"8dB","Package / Case":"SOT-422A","Mounting Type":"Surface Mount","DC Current Gain (...
1530 Bytes - 07:27:02, 01 December 2024
Documentation and Support
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BLS3135-20.pdf | 0.07 | 1 | Request |