Product Datasheet Search Results:

BLS2731-10.pdf12 Pages, 79 KB, Original
BLS2731-10
Nxp Semiconductors
TRANSISTOR RF POWER SOT445C - BLS2731-10,114
BLS2731-10,114.pdf12 Pages, 79 KB, Original
BLS2731-10,114
Nxp Semiconductors
TRANSISTOR RF POWER SOT445C - BLS2731-10,114
BLS2731-10 TRAY.pdf12 Pages, 79 KB, Original
BLS2731-10 TRAY
Nxp Semiconductors / Philips Semiconductors
Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 45 %; Frequency: 2700 - 3100 MHz; Load power: 12.5 W; Operating voltage: 40 VDC; Power gain: 10 dB; Pulse width: 100 us
BLS2731-10.pdf12 Pages, 79 KB, Original

Product Details Search Results:

Nxp.com/BLS2731-10,114
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"1.5A","Frequency - Transition":"3.1GHz","Noise Figure (dB Typ @ f)":"-","Transistor Type":"NPN","Product Photos":"SOT-445C","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"4","Voltage - Collector Emitter Breakdown (Max)":"75V","Supplier Device Package":"CDFM2","Packaging":"Tray","Datasheets":"BLS2731-10","Power - Max":"145W","Gain":"10dB","Package / Case":"SOT-445C","Mounting Type":"Surface Mount","DC Current Ga...
1518 Bytes - 15:34:50, 15 December 2024

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