Product Datasheet Search Results:
13 Pages, 60 KB, Original- BLF4G22-130
- Nxp Semiconductors / Philips Semiconductors
- UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
Product Details Search Results:
Nxp.com/BLF4G22-100,112
{"Category":"MOSFET","Maximum Drain Source Voltage":"65 V","Description":"Value","Maximum Continuous Drain Current":"12 A","Package":"3LDMOST","Mounting":"Screw","Maximum Gate Source Voltage":"15 V","Channel Mode":"Enhancement","Operating Temperature":"-65 to 200 \u00b0C","RDS-on":"90(Typ)@9.5V mOhm","Manufacturer":"NXP Semiconductors"}...
1212 Bytes - 15:58:26, 15 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BLF4G22-130.pdf | 0.08 | 1 | Request |
