Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10.2 A","EU RoHS Compliant":"Yes","Configuration":"COMPLEX","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"65 V","Transistor Application":"AMPLIFIER","Surf...

{"Category":"Discrete Semiconductor Products","Packaging":"Tube","Transistor Type":"LDMOS","Voltage - Rated":"65V","Family":"RF FETs","Series":"-","Noise Figure":"-","Package / Case":"SOT-1130B","Supplier Device Package":"CDFM4","Voltage - Test":"28V","PCN Obsolescence/ EOL":"Multiple Devices 29/Dec/2014","Datasheets":"BLD6G22(LS)-50","Frequency":"2.11GHz ~ 2.17GHz","Gain":"13.3dB","Standard Package":"20","Current - Test":"170mA","Current Rating":"10.2A","Power - Output":"8W","Other Names":"934063512112"}...

{"Frequency (Min)":"2110 MHz","Channel Mode":"Enhancement","Continuous Drain Current":"10.2 A","Mounting":"Surface Mount","Rad Hardened":"No","Frequency (Max)":"2170 MHz","Channel Type":"N","Packaging":"Bulk","Mode Of Operation":"W-CDMA","Operating Temp Range":"-65C to 200C","Drain Efficiency (Typ)":"40 %","Package Type":"CDFM","Drain Source Voltage (Max)":"65 V","Screening Level":"Military","Pin Count":"5","Number of Elements":"2","Power Gain (Typ)@Vds":"14@28V dB"}...