Product Datasheet Search Results:

BG5412K.pdf13 Pages, 561 KB, Original
BG5412K
Infineon Technologies
MOSFET N-CH DUAL 8V 25MA SOT363 - BG 5412K H6327
BG5412K E6327.pdf13 Pages, 561 KB, Original
BG5412K E6327
Infineon Technologies
MOSFET N-CH DUAL 8V 25MA SOT-363 - BG 5412K E6327
BG5412K H6327.pdf13 Pages, 561 KB, Original
BG5412K H6327
Infineon Technologies
MOSFET N-CH DUAL 8V 25MA SOT363 - BG 5412K H6327

Product Details Search Results:

Infineon.com/BG5412K
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0250 A","EU RoHS Compliant":"Yes","Configuration":"COMPLEX","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"12 V","Transistor Application":"AMPLIFIER","Surface Mo...
1482 Bytes - 14:53:47, 28 February 2025

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