Product Datasheet Search Results:

BC846AT/R.pdf1 Pages, 37 KB, Original
BC846AT/R
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
BC846AT/R.pdf14 Pages, 96 KB, Original
BC846AT/R13.pdf7 Pages, 388 KB, Original
BC846AT/R13
Panjit Semiconductor
100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR
BC846AT/R7.pdf7 Pages, 388 KB, Original
BC846AT/R7
Panjit Semiconductor
100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR

Product Details Search Results:

Panjit.com.tw/BC846AT/R13
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"ROHS COMPLIANT, PLASTIC PACKAGE-3","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"110","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"65 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Terminal Position":"DUAL","Transisto...
1393 Bytes - 20:33:40, 07 October 2024
Panjit.com.tw/BC846AT/R7
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"ROHS COMPLIANT, PLASTIC PACKAGE-3","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"110","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"65 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Terminal Position":"DUAL","Transisto...
1385 Bytes - 20:33:40, 07 October 2024
Semiconductors.philips.com/BC846AT/R
{"Absolute Max. Power Diss. (W)":"300m","Noise Figure Max. (dB)":"10","V(BR)CBO (V)":"80","h(FE) Min. Static Current Gain":"110","I(C) Abs.(A) Collector Current":"100m","h(FE) Max. Current gain.":"220","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"15n","@V(CBO) (V) (Test Condition)":"30","Package":"TO-236AA","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"100M","V(BR)CEO (V)":"65","Military":"N","@I(C) (A) (Test Condition)":"200u","Semiconductor Material":"Silicon","C(obo) (...
1102 Bytes - 20:33:40, 07 October 2024