Datasheet.Directory

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"ROHS COMPLIANT, PLASTIC PACKAGE-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"200","Collector-emitter Voltage-Max":"65 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"300 MHz","Collector Current-Max (IC)":"0.1000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"S...

{"Collector Current (DC) ":"0.1(A)","Configuration":"Single","Transistor Polarity":"NPN","Operating Temperature Classification":"Military","Mounting":"Through Hole","Emitter-Base Voltage":"5(V)","Collector-Emitter Voltage":"65(V)","Rad Hardened":"No","Packaging":"Box","Category ":"Bipolar Small Signal","Operating Temp Range":"-55C to 150C","Frequency":"300(MHz)","Package Type":"TO-92","Collector-Base Voltage":"80(V)","DC Current Gain":"200","Output Power":"Not Required(W)","Power Dissipation":"0.5(W)","Pin ...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Frequency - Transition":"300MHz","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"600mV @ 5mA, 100mA","Supplier Device Package":"TO-92-3","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","PCN Design\/Specification":"Copper Lead Frame 12\/Oct\/2007","Voltage - Collector Emitter Breakdown (Max)":"65V","Pa...