Datasheet.Directory

{"Polarity":"NPN","Collector Current (DC) ":"1.2 A","Collector-Emitter Saturation Voltage":"1 V","Collector-Emitter Voltage":"30 V","Mounting":"Through Hole","Emitter-Base Voltage":"10 V","Rad Hardened":"No","Packaging":"Bulk","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-92","Collector-Base Voltage":"40 V","DC Current Gain":"30000","Pin Count":"3","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"1.2A","DC Current Gain (hFE) (Min) @ Ic, Vce":"30000 @ 20mA, 2V","Transistor Type":"NPN - Darlington","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1V @ 100\u00b5A, 100mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","Series":"-","Standard Package":"2,000","Voltage - Collector Emitter Breakdown (Max)":"30V","Supplier Device Package":"TO-92...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"1.2A","Mounting Type":"Through Hole","Transistor Type":"NPN - Darlington","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1V @ 100\u00b5A, 100mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","Series":"-","PCN Packaging":"TO92 Packing Updates 01\/Jul\/2015","Voltage - Collector Emitter Breakdown (Max)":"30V","Datasheets":"BC517","Packaging":"Tape & Box (TB)","Power - Max":"...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"1.2A","DC Current Gain (hFE) (Min) @ Ic, Vce":"30000 @ 20mA, 2V","Transistor Type":"NPN - Darlington","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1V @ 100\u00b5A, 100mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","Series":"-","Standard Package":"2,000","Voltage - Collector Emitter Breakdown (Max)":"30V","Supplier Device Package":"TO-92...

{"@I(C) (A) (Test Condition)":"100m","Absolute Max. Power Diss. (W)":"625m","V(CE)sat Max.(V)":"1.0","I(CBO) Max. (A)":"100n","I(C) Abs.(A) Collector Current":"1.0","Semiconductor Material":"Silicon","h(FE) Min. Static Current Gain":"33k","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Test Condition)":"100u","V(BR)CEO (V)":"30","@V(CBO) (V) (Test Condition)":"20","Military":"N","V(BR)CBO (V)":"40","Package":"TO-92","f(T) Min. (Hz) Transition Freq":"200M"}...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-92, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.6250 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"30000","Collector-emitter Voltage-Max":"30 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"220 MHz","Collector Current-Max (IC)":"0.5000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"DARLINGTON",...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Polarity":"NPN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.6250 W","Number of Terminals":"3","DC Current Gain-Min (hFE)":"30000","Collector-emitter Voltage-Max":"30 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"250 MHz","Collector Current-Max (IC)":"0.4000 A","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"DARLINGTON","Pac...

{"@I(C) (A) (Test Condition)":"20m","Absolute Max. Power Diss. (W)":"1.0","I(C) Abs.(A) Collector Current":"400m","h(FE) Max. Current gain.":"30k","@V(CE) (V) (Test Condition)":"2.0","V(BR)CEO (V)":"30","Package":"TO-92","V(BR)CBO (V)":"40","Military":"N"}...

{"Category":"Transistor, Darlington Transistor","Amps":"0.4A","MHz":"<1 MHz","Volts":"40V"}...

{"Category":"Transistor, Darlington Transistor","Amps":"0.4A","MHz":"220 MHz","Volts":"40V"}...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"500mA","Frequency - Transition":"220MHz","Transistor Type":"NPN - Darlington","Product Photos":"TO-92-3","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1V @ 100\u00b5A, 100mA","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","Voltage - Collector Emitter Breakdown (Max)":"30V","Power - Max":"625mW","Packaging":"Bulk","Datasheets":"BC517","Current - Collector Cutoff (Max)":"-","Supplier Device ...