Datasheet.Directory

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-92-18R, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"180","Collector-emitter Voltage-Max":"20 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"150 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor P...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Frequency - Transition":"250MHz","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"600mV @ 5mA, 100mA","Supplier Device Package":"TO-92-3","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","PCN Design\/Specification":"Copper Lead Frame 12\/Oct\/2007","Voltage - Collector Emitter Breakdown (Max)":"25V","Pa...

{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.5000 W","Number of Terminals":"3","DC Current Gain-Min (hFE)":"180","Collector-emitter Voltage-Max":"25 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"250 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","P...

{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.5000 W","Number of Terminals":"3","DC Current Gain-Min (hFE)":"180","Collector-emitter Voltage-Max":"25 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"250 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","P...

{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.5000 W","Number of Terminals":"3","DC Current Gain-Min (hFE)":"180","Collector-emitter Voltage-Max":"25 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"250 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","P...

{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.5000 W","Number of Terminals":"3","DC Current Gain-Min (hFE)":"180","Collector-emitter Voltage-Max":"25 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"250 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","P...

{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-92, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"180","Collector-emitter Voltage-Max":"25 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"250 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Packa...

{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-92, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"180","Collector-emitter Voltage-Max":"25 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"250 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Packa...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Frequency - Transition":"250MHz","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"600mV @ 5mA, 100mA","Supplier Device Package":"TO-92-3","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA) Formed Leads","PCN Design\/Specification":"Copper Lead Frame 12\/Oct\/2007","Voltage - Collector Emitter Breakdown (Ma...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Frequency - Transition":"250MHz","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"600mV @ 5mA, 100mA","Supplier Device Package":"TO-92-3","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","PCN Design\/Specification":"Copper Lead Frame 12\/Oct\/2007","Voltage - Collector Emitter Breakdown (Max)":"25V","Pa...

{"@I(C) (A) (Test Condition)":"2.0m","I(CBO) Max. (A)":"15n","Absolute Max. Power Diss. (W)":"350m","I(C) Abs.(A) Collector Current":"100m","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"150M","V(BR)CEO (V)":"25","Package":"TO-18","h(FE) Min. Static Current Gain":"200","Military":"N","C(obo) (Max) (F)":"4.5p"}...

{"@I(C) (A) (Test Condition)":"2.0m","I(CBO) Max. (A)":"15n","Absolute Max. Power Diss. (W)":"350m","I(C) Abs.(A) Collector Current":"100m","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"150M","V(BR)CEO (V)":"25","Package":"TO-5","h(FE) Min. Static Current Gain":"200","Military":"N","C(obo) (Max) (F)":"4.5p"}...