Did you mean: BAS85
Product Datasheet Search Results:
- BAS85
- Diodes, Inc.
- Silicon Schottky Barrier Diode
- BAS85T
- Diodes, Inc.
- Silicon Schottky Barrier Diode
- BAS85T-01I
- Diodes, Inc.
- SILICON SCHOTTKY BARRIER DIODE
- BAS85
- Eic Semiconductor, Inc.
- Schottky Barrier Diodes
- BAS85
- Eic Semiconductor
- SCHOTTKY BARRIER DIODE
- BAS85
- Galaxy Semi-conductor Holdings Limited
- SMALL SIGNAL SCHOTTKY DIODES
- BAS85
- Good-ark Electronics
- Rectifier Diode, Schottky Diode, Single, DO-213AA, 2-Pin
- BAS85-TP
- Micro Commercial Components Corp.
- 0.2 A, SILICON, SIGNAL DIODE
- BAS85
- Microsemi Corp.
- 0.2 A, SILICON, SIGNAL DIODE, DO-213AA
Product Details Search Results:
Eic_semiconductor/BAS85
{"Mounting":"Through Hole","Rad Hardened":"No","Product Height (mm)":"2(mm)","Package Type":"DO-35","Pin Count":"2"}...
1149 Bytes - 15:19:52, 29 November 2024
Mccsemi.com/BAS85-TP
{"Status":"EOL/LIFEBUY","Lead Free":"Yes","Terminal Finish":"MATTE TIN","Package Body Material":"GLASS","Mfr Package Description":"ROHS COMPLIANT, MINIMELF-2","Terminal Form":"WRAP AROUND","Package Style":"LONG FORM","Average Forward Current-Max":"0.2000 A","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"0.2000 W","Number of Elements":"1","Case Connection":"ISOLATED","EU RoHS Compliant":"Yes","Terminal Position":"END","Diode Type":"SIGNAL DIODE","Package Shape":"ROUND","Configuration":"SIN...
1318 Bytes - 15:19:52, 29 November 2024
Microsemi.com/BAS85
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Terminal Form":"WRAP AROUND","Package Style":"LONG FORM","Average Forward Current-Max":"0.2000 A","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"0.5000 W","Number of Elements":"1","Case Connection":"ISOLATED","Terminal Position":"END","Diode Type":"SIGNAL DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Technology":"SCHOTTKY","Number of Terminals":"2","Reverse Recovery Time-Max":"0.0050 us","Surface M...
1167 Bytes - 15:19:52, 29 November 2024
Nexperia/BAS85,115
{"Peak Rep Rev Volt":"30(V)","Peak Non-Repetitive Surge Current":"5(A)","Rev Curr":"2.3(uA)","Mounting":"Surface Mount","Forward Current":"200(mA)","Operating Temp Range":"-65C to 125C","Forward Voltage":"0.8(V)","Packaging":"Tape and Reel","Rectifier Type":"Schottky Diode","Rad Hardened":"No","Package Type":"Mini MELF","Pin Count":"2","Maximum Forward Current":"200(mA)","Peak Forward Voltage":"0.8(V)","Peak Reverse Current":"2.3(uA)","Configuration":"Single","Operating Temperature Classification":"Military...
1457 Bytes - 15:19:52, 29 November 2024
Nexperia/BAS85,135
{"Peak Rep Rev Volt":"30(V)","Peak Non-Repetitive Surge Current":"5(A)","Rectifier Type":"Schottky Diode","Mounting":"Surface Mount","Forward Current":"200(mA)","Rad Hardened":"No","Forward Voltage":"0.8(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 125C","Package Type":"Mini MELF","Peak Forward Voltage":"0.8(V)","Maximum Forward Current":"200(mA)","Rev Curr":"2.3(uA)","Peak Reverse Current":"2.3(uA)","Configuration":"Single","Pin Count":"2...
1462 Bytes - 15:19:52, 29 November 2024
Nxp.com/BAS85
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN","Package Body Material":"GLASS","Mfr Package Description":"HERMETIC SEALED, GLASS PACKAGE-2","Terminal Form":"WRAP AROUND","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"30 V","Diode Element Material":"SILICON","Average Forward Current-Max":"0.2000 A","Number of Elements":"1","Case Connection":"ISOLATED","EU RoHS Compliant":"Yes","Terminal Position":"END","Diode Type":"SIGNAL DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Tech...
1232 Bytes - 15:19:52, 29 November 2024
Nxp.com/BAS85,115
{"Category":"Discrete Semiconductor Products","Operating Temperature - Junction":"125\u00b0C (Max)","Package / Case":"DO-213AC, MINI-MELF, SOD-80","PCN Other":"SOD27,66,68,80 Package 29/Jul/2013","Product Photos":"SOD-80C Pkg","Reverse Recovery Time (trr)":"-","Datasheets":"BAS85","Standard Package":"1","Current - Average Rectified (Io)":"200mA","Voltage - Forward (Vf) (Max) @ If":"800mV @ 100mA","Voltage - DC Reverse (Vr) (Max)":"30V","Capacitance @ Vr, F":"10pF @ 1V, 1MHz","Online Catalog":"Schottky Diode...
1767 Bytes - 15:19:52, 29 November 2024
Nxp.com/BAS85@115
833 Bytes - 15:19:52, 29 November 2024
Nxp.com/BAS85,135
{"Category":"Discrete Semiconductor Products","Operating Temperature - Junction":"125\u00b0C (Max)","Package / Case":"DO-213AC, MINI-MELF, SOD-80","PCN Other":"SOD27,66,68,80 Package 29/Jul/2013","Product Photos":"SOD-80C Pkg","Reverse Recovery Time (trr)":"-","Datasheets":"BAS85","Standard Package":"10,000","Current - Average Rectified (Io)":"200mA","Voltage - Forward (Vf) (Max) @ If":"800mV @ 100mA","Voltage - DC Reverse (Vr) (Max)":"30V","Capacitance @ Vr, F":"10pF @ 1V, 1MHz","Online Catalog":"Schottky ...
1815 Bytes - 15:19:52, 29 November 2024
Nxp.com/BAS85T/R
{"Peak Rep Rev Volt":"30","Avg. Forward Curr (Max)":"0.2","Peak Non-Repetitive Surge Current":"5 A","Rectifier Type":"Schottky Diode","Mounting":"Surface Mount","Rad Hardened":"No","Forward Voltage":"0.8","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 125C","Package Type":"Mini MELF","Peak Non-Repetitive Surge Current (Max)":"5","Rev Curr":"2.3","Configuration":"Single","Pin Count":"2"}...
1207 Bytes - 15:19:52, 29 November 2024
Rectron.com/BAS85
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN","Package Body Material":"GLASS","Mfr Package Description":"HERMETIC SEALED, GLASS, MINIMELF-2","Terminal Form":"WRAP AROUND","Package Style":"LONG FORM","Average Forward Current-Max":"0.2000 A","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"0.2000 W","Number of Elements":"1","Case Connection":"ISOLATED","EU RoHS Compliant":"Yes","Terminal Position":"END","Diode Type":"SIGNAL DIODE","Package Shape":"ROUND","Configuration":"...
1287 Bytes - 15:19:52, 29 November 2024
Semiconductors.philips.com/BAS85T/R
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"5","Package Body Material":"Glass","Package":"DO-213AA","I(O) Max.(A) Output Current":"200m","@V(R) (V)(Test Condition)":"30","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","I(RM) Max.(A) Reverse Current":"2.3u","Military":"N","@I(FM) (A) (Test Condition)":"100m","V(FM) Max.(V) Forward Voltage":"800m"}...
893 Bytes - 15:19:52, 29 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
FUSE_BASES_OFAZ_BASELINE_JULY_2024.pdf | 28.15 | 1 | Request | |
DS_DDR3_4GB_B_DIE_BASED_1_35V_RDIMM.pdf | 1.56 | 1 | Request | |
SAMSUNG_Z_SSD_AND_SCYLLADB_DELIVERING_LOW_LATENCY_AND_MULTI_TERABYTE_CAPACITY_IN_A_PERSISTENT_DATABASE.pdf | 1.99 | 1 | Request | |
DS_DDR3_1GB_G_DIE_BASED_VLP_RDIMM.pdf | 1.32 | 1 | Request | |
DS_DDR3_1GB_D_DIE_BASED_RDIMM.pdf | 1.46 | 1 | Request | |
DS_DDR3_2GB_E_DIE_BASED_RDIMM.pdf | 1.43 | 1 | Request | |
DS_DDR3_4GB_A_DIE_BASED_1_35V_RDIMM.pdf | 1.32 | 1 | Request | |
DS_DDR3_4GB_B_DIE_BASED_RDIMM.pdf | 1.63 | 1 | Request | |
DS_DDR3_4GB_A_DIE_BASED_RDIMM.pdf | 1.27 | 1 | Request | |
DS_DDR3_2GB_B_DIE_BASED_RDIMM.pdf | 1.18 | 1 | Request | |
DS_DDR3_4GB_B_DIE_BASED_1_35V_VLP_RDIMM.pdf | 1.54 | 1 | Request | |
DS_DDR3_2GB_C_DIE_BASED_1_35V_RDIMM.pdf | 1.54 | 1 | Request |