Product Datasheet Search Results:
1 Pages, 37 KB, Original- BAS40-06T/R
- N/a
- Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
21 Pages, 221 KB, Original- BAS40-06T/R
- Nxp Semiconductors / Philips Semiconductors
- General-purpose Schottky diodes - C<sub>d</sub> max.: 5@VR=0V pF; Configuration: dual c.a. ; I<sub>F</sub> max: 120 mA; I<sub>FSM</sub> max: 200 A; I<sub>R</sub> max: 1@VR=30VA; V<sub>F</sub>max: 500@IF=10mA mV; V<sub>R</sub> max: 40 V
Product Details Search Results:
Nxp.com/BAS40-06T/R
740 Bytes - 06:07:29, 12 December 2024
Semiconductors.philips.com/BAS40-06T/R
{"Package":"TO-236","I(O) Max.(A) Output Current":"40m","@Temp (°C) (Test Condition)":"25","@V(R) (V)(Test Condition)":"30","V(RRM)(V) Rep.Pk.Rev. Voltage":"40","I(RM) Max.(A) Reverse Current":"1.0u","Military":"N","@I(FM) (A) (Test Condition)":"1.0m","V(FM) Max.(V) Forward Voltage":"380m"}...
886 Bytes - 06:07:29, 12 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
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| FUSE_BASES_OFAZ_BASELINE_JULY_2024.pdf | 28.15 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_1_35V_RDIMM.pdf | 1.56 | 1 | Request | |
| SAMSUNG_Z_SSD_AND_SCYLLADB_DELIVERING_LOW_LATENCY_AND_MULTI_TERABYTE_CAPACITY_IN_A_PERSISTENT_DATABASE.pdf | 1.99 | 1 | Request | |
| DS_DDR3_1GB_G_DIE_BASED_VLP_RDIMM.pdf | 1.32 | 1 | Request | |
| DS_DDR3_1GB_D_DIE_BASED_RDIMM.pdf | 1.46 | 1 | Request | |
| DS_DDR3_2GB_E_DIE_BASED_RDIMM.pdf | 1.43 | 1 | Request | |
| DS_DDR3_4GB_A_DIE_BASED_1_35V_RDIMM.pdf | 1.32 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_RDIMM.pdf | 1.63 | 1 | Request | |
| DS_DDR3_4GB_A_DIE_BASED_RDIMM.pdf | 1.27 | 1 | Request | |
| DS_DDR3_2GB_B_DIE_BASED_RDIMM.pdf | 1.18 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_1_35V_VLP_RDIMM.pdf | 1.54 | 1 | Request | |
| DS_DDR3_2GB_C_DIE_BASED_1_35V_RDIMM.pdf | 1.54 | 1 | Request |
