Product Datasheet Search Results:
- BAS40-05T/R
- N/a
- Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
- BAS40-05T/R
- Nxp Semiconductors / Philips Semiconductors
- General-purpose Schottky diodes - C<sub>d</sub> max.: 5@VR=0V pF; Configuration: dual c.c. ; I<sub>F</sub> max: 120 mA; I<sub>FSM</sub> max: 200 A; I<sub>R</sub> max: 1@VR=30VA; V<sub>F</sub>max: 500@IF=10mA mV; V<sub>R</sub> max: 40 V
Product Details Search Results:
Nxp.com/BAS40-05T/R
{"Peak Rep Rev Volt":"40","Avg. Forward Curr (Max)":"0.12","Peak Non-Repetitive Surge Current":"0.2 A","Rectifier Type":"Schottky Diode","Mounting":"Surface Mount","Rad Hardened":"No","Forward Voltage":"1","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 150C","Package Type":"TO-236AB","Peak Non-Repetitive Surge Current (Max)":"0.2","Rev Curr":"10","Configuration":"Dual Common Cathode","Pin Count":"3"}...
1257 Bytes - 05:54:19, 28 December 2024
Semiconductors.philips.com/BAS40-05T/R
{"Package":"TO-236","I(O) Max.(A) Output Current":"40m","@Temp (°C) (Test Condition)":"25","@V(R) (V)(Test Condition)":"30","V(RRM)(V) Rep.Pk.Rev. Voltage":"40","I(RM) Max.(A) Reverse Current":"1.0u","Military":"N","@I(FM) (A) (Test Condition)":"1.0m","V(FM) Max.(V) Forward Voltage":"380m"}...
886 Bytes - 05:54:19, 28 December 2024
Documentation and Support
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FUSE_BASES_OFAZ_BASELINE_JULY_2024.pdf | 28.15 | 1 | Request | |
DS_DDR3_4GB_B_DIE_BASED_1_35V_RDIMM.pdf | 1.56 | 1 | Request | |
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DS_DDR3_4GB_A_DIE_BASED_RDIMM.pdf | 1.27 | 1 | Request | |
DS_DDR3_2GB_B_DIE_BASED_RDIMM.pdf | 1.18 | 1 | Request | |
DS_DDR3_4GB_B_DIE_BASED_1_35V_VLP_RDIMM.pdf | 1.54 | 1 | Request | |
DS_DDR3_2GB_C_DIE_BASED_1_35V_RDIMM.pdf | 1.54 | 1 | Request |