Product Datasheet Search Results:
15 Pages, 168 KB, Original- BAS40-04E6327XT
- Infineon Technologies Ag
- 0.12 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Product Details Search Results:
Infineon.com/BAS40-04E6327XT
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"GREEN PACKAGE-3","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Rep Pk Reverse Voltage-Max":"40 V","Diode Element Material":"SILICON","Number of Elements":"2","Power Dissipation Limit-Max":"0.2500 W","Average Forward Current-Max":"0.1200 A","China RoHS Compliant":"Yes","EU RoHS Compliant":"Yes","Terminal Position":"DUAL","Diode Type":"SIGNAL DIODE","Package Shap...
1393 Bytes - 19:07:27, 27 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| FUSE_BASES_OFAZ_BASELINE_JULY_2024.pdf | 28.15 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_1_35V_RDIMM.pdf | 1.56 | 1 | Request | |
| SAMSUNG_Z_SSD_AND_SCYLLADB_DELIVERING_LOW_LATENCY_AND_MULTI_TERABYTE_CAPACITY_IN_A_PERSISTENT_DATABASE.pdf | 1.99 | 1 | Request | |
| DS_DDR3_1GB_G_DIE_BASED_VLP_RDIMM.pdf | 1.32 | 1 | Request | |
| DS_DDR3_1GB_D_DIE_BASED_RDIMM.pdf | 1.46 | 1 | Request | |
| DS_DDR3_2GB_E_DIE_BASED_RDIMM.pdf | 1.43 | 1 | Request | |
| DS_DDR3_4GB_A_DIE_BASED_1_35V_RDIMM.pdf | 1.32 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_RDIMM.pdf | 1.63 | 1 | Request | |
| DS_DDR3_4GB_A_DIE_BASED_RDIMM.pdf | 1.27 | 1 | Request | |
| DS_DDR3_2GB_B_DIE_BASED_RDIMM.pdf | 1.18 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_1_35V_VLP_RDIMM.pdf | 1.54 | 1 | Request | |
| DS_DDR3_2GB_C_DIE_BASED_1_35V_RDIMM.pdf | 1.54 | 1 | Request |
