Product Datasheet Search Results:
2 Pages, 45 KB, Original- BAS29
- Continental Device India Limited
- Silicon Planar Epitaxial High Speed Diode
5 Pages, 213 KB, Original- BAS299-7
- Diodes Inc
- General Purpose Silicon Rectifier
1 Pages, 271 KB, Original- BAS29
- Fairchild Semiconductor
- Diodes - General Purpose, Power, Switching 120V 200mA
2 Pages, 55 KB, Original- BAS29_D87Z
- Fairchild
- DIODE GEN PURP 120V 200MA SOT23 - BAS29_D87Z
1 Pages, 22 KB, Original- BAS29D87Z
- Fairchild Semiconductor Corporation
- 0.2 A, 120 V, SILICON, SIGNAL DIODE
1 Pages, 22 KB, Original- BAS29L99Z
- Fairchild Semiconductor Corporation
- 0.2 A, 120 V, SILICON, SIGNAL DIODE
2 Pages, 55 KB, Original- BAS29_NL
- Fairchild Semiconductor
- General Purpose High Voltage Diode
2 Pages, 55 KB, Original- BAS29_S00Z
- Fairchild Semiconductor
- General Purpose High Voltage Diode
1 Pages, 22 KB, Original- BAS29S62Z
- Fairchild Semiconductor Corporation
- 0.2 A, 120 V, SILICON, SIGNAL DIODE
1 Pages, 97 KB, Scan- BAS29
- Jinan Gude Electronic Device Co., Ltd.
- SURFACE MOUNT SWITCHING DIODES
Product Details Search Results:
Diodes.com/BAS299-7
793 Bytes - 18:04:50, 23 December 2024
Fairchildsemi.com/BAS29
{"Category":"Discrete Semiconductor Products","Operating Temperature - Junction":"150\u00b0C (Max)","Package / Case":"TO-236-3, SC-59, SOT-23-3","Product Photos":"SOT-23-3","PCN Assembly/Origin":"SOT23 Manufacturing Source 31/May2013 Assembly Site Addition 20/Jul/2015","PCN Design/Specification":"Mold Compound 12/Dec/2007","Reverse Recovery Time (trr)":"50ns","Datasheets":"BAS29","Standard Package":"1","Current - Average Rectified (Io)":"200mA","Voltage - Forward (Vf) (Max) @ If":"1V @ 200mA","Voltage - DC ...
1928 Bytes - 18:04:50, 23 December 2024
Fairchildsemi.com/BAS29_D87Z
{"Category":"Discrete Semiconductor Products","Packaging":"Tape & Reel (TR)","Current - Reverse Leakage @ Vr":"100nA @ 90V","Product Photos":"SOT-23-3","Family":"Diodes, Rectifiers - Single","Standard Package":"10,000","Series":"-","Capacitance @ Vr, F":"2pF @ 0V, 1MHz","Voltage - Forward (Vf) (Max) @ If":"1V @ 200mA","PCN Design/Specification":"Mold Compound 12/Dec/2007","Supplier Device Package":"SOT-23-3 (TO-236)","Reverse Recovery Time (trr)":"50ns","Datasheets":"BAS29 Molded Pkg, SUPERSOT, 3 Lead Drawi...
1794 Bytes - 18:04:50, 23 December 2024
Fairchildsemi.com/BAS29D87Z
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Rep Pk Reverse Voltage-Max":"120 V","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"0.3500 W","Average Forward Current-Max":"0.2000 A","Number of Elements":"1","Terminal Position":"DUAL","Diode Type":"SIGNAL DIODE","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Number of Terminals":"3","Reverse Recovery Time-Max":"0.0500 us","Surface Mount":"Yes"}...
1207 Bytes - 18:04:50, 23 December 2024
Fairchildsemi.com/BAS29L99Z
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Rep Pk Reverse Voltage-Max":"120 V","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"0.3500 W","Average Forward Current-Max":"0.2000 A","Number of Elements":"1","Terminal Position":"DUAL","Diode Type":"SIGNAL DIODE","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Number of Terminals":"3","Reverse Recovery Time-Max":"0.0500 us","Surface Mount":"Yes"}...
1209 Bytes - 18:04:50, 23 December 2024
Fairchildsemi.com/BAS29S62Z
{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Rep Pk Reverse Voltage-Max":"120 V","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"0.3500 W","Average Forward Current-Max":"0.2000 A","Number of Elements":"1","Terminal Position":"DUAL","Diode Type":"SIGNAL DIODE","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Number of Terminals":"3","Reverse Recovery Time-Max":"0.0500 us","Surface Mount":"Yes"}...
1220 Bytes - 18:04:50, 23 December 2024
Nexperia/BAS29,215
{"Rectifier Type":"Switching Diode","Peak Rep Rev Volt":"110(V)","Peak Non-Repetitive Surge Current":"10(A)","Forward Current":"250(mA)","Peak Reverse Recovery Time":"50(ns)","Mounting":"Surface Mount","Product Height (mm)":"1(mm)","Peak Reverse Current":"0.1(uA)","Rad Hardened":"No","Forward Voltage":"1.25(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 150C","Rev Recov Time":"50(ns)","Package Type":"SOT-23","Power Dissipation (Max)":"250(mW...
1630 Bytes - 18:04:50, 23 December 2024
Nxp.com/BAS29
{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Reverse Recovery Time-Max":"0.0500 us","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Rep Pk Reverse Voltage-Max":"110 V","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Power Dissipation Limit-Max":"0.2500 W","China RoHS Compliant":"Yes","Average Forward Current-Max":"0.2500 A","Surface Mount":"Yes","Mfr Package Description":"PLASTIC PACKAGE-3","Number of Terminals":"3","Terminal Position":...
1288 Bytes - 18:04:50, 23 December 2024
Nxp.com/BAS29212
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Rep Pk Reverse Voltage-Max":"110 V","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"0.2500 W","Number of Elements":"1","Terminal Position":"DUAL","Diode Type":"SIGNAL DIODE","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Technology":"AVALANCHE","Number of Terminals":"3","Reverse Recovery Time-Max":"0.0500 us","Surface Mount":"Yes"}...
1106 Bytes - 18:04:50, 23 December 2024
Nxp.com/BAS29,215
{"Category":"Discrete Semiconductor Products","Operating Temperature - Junction":"150\u00b0C (Max)","Package / Case":"TO-236-3, SC-59, SOT-23-3","Product Photos":"SOT-23-3","Standard Package":"1","PCN Design/Specification":"Resin Hardener 02/Jul/2013","Reverse Recovery Time (trr)":"50ns","Datasheets":"BAS29,31,35","PCN Packaging":"Lighter Reels 02/Jan/2014","Current - Average Rectified (Io)":"250mA (DC)","Voltage - Forward (Vf) (Max) @ If":"1V @ 200mA","Voltage - DC Reverse (Vr) (Max)":"90V","Capacitance @ ...
1883 Bytes - 18:04:50, 23 December 2024
Nxp.com/BAS29@215
833 Bytes - 18:04:50, 23 December 2024
Nxp.com/BAS29235
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Rep Pk Reverse Voltage-Max":"110 V","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"0.2500 W","Number of Elements":"1","Terminal Position":"DUAL","Diode Type":"SIGNAL DIODE","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Technology":"AVALANCHE","Number of Terminals":"3","Reverse Recovery Time-Max":"0.0500 us","Surface Mount":"Yes"}...
1102 Bytes - 18:04:50, 23 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| FUSE_BASES_OFAZ_BASELINE_JULY_2024.pdf | 28.15 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_1_35V_RDIMM.pdf | 1.56 | 1 | Request | |
| SAMSUNG_Z_SSD_AND_SCYLLADB_DELIVERING_LOW_LATENCY_AND_MULTI_TERABYTE_CAPACITY_IN_A_PERSISTENT_DATABASE.pdf | 1.99 | 1 | Request | |
| DS_DDR3_1GB_G_DIE_BASED_VLP_RDIMM.pdf | 1.32 | 1 | Request | |
| DS_DDR3_1GB_D_DIE_BASED_RDIMM.pdf | 1.46 | 1 | Request | |
| DS_DDR3_2GB_E_DIE_BASED_RDIMM.pdf | 1.43 | 1 | Request | |
| DS_DDR3_4GB_A_DIE_BASED_1_35V_RDIMM.pdf | 1.32 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_RDIMM.pdf | 1.63 | 1 | Request | |
| DS_DDR3_4GB_A_DIE_BASED_RDIMM.pdf | 1.27 | 1 | Request | |
| DS_DDR3_2GB_B_DIE_BASED_RDIMM.pdf | 1.18 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_1_35V_VLP_RDIMM.pdf | 1.54 | 1 | Request | |
| DS_DDR3_2GB_C_DIE_BASED_1_35V_RDIMM.pdf | 1.54 | 1 | Request |
