Datasheet.Directory

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"31(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"110(W)","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"31(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"110(W)","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"31 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"110 A","Channel Type":"P-CHAN...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"31A (Tc)","Gate Charge (Qg) @ Vgs":"63nC @ 10V","Product Photos":"TO-252-3","PCN Assembly/Origin":"D-Pak Leadframe BOM Update 26/Sep/2014","PCN Design/Specification":"Leadframe Update 02/Jun/2015 Leadframe Retraction 03/Jun/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC G...

{"Category":"MOSFET","Maximum Drain Source Voltage":"55 V","Typical Turn-Off Delay Time":"39 ns","Description":"Value","Maximum Continuous Drain Current":"31 A","Package":"3DPAK","Typical Turn-On Delay Time":"14 ns","Mounting":"Surface Mount","Typical Rise Time":"66 ns","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"0.065@10V Ohm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"International Rectifier","Typical Fall Time":"63 ns"}...

{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"- 55 V","Transistor Polarity":"P-Channel","Rds On - Drain-Source Resistance":"65 mOhms","Configuration":"Single Quint Source","Mounting Style":"SMD/SMT","Forward Transconductance - Min":"8 S","Brand":"International Rectifier","Id - Continuous Drain Current":"- 31 A","Vgs th - Gate-Source Threshold Voltage":"- 4 V","Packaging":"Reel","Rise Time":"66 ns","Product Category":"MOSFET","Qg - Gate Charge":"63 nC","Pd - Power Dissipation":"110 ...