Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"382(A)","Mounting":"Through Hole","Drain-Source On-Volt":"24(V)","Packaging":"Rail\/Tube","Power Dissipation":"300(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-262","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-262-3 Wide Leads","Current - Continuous Drain (Id) @ 25\u00b0C":"240A (Tc)","Gate Charge (Qg) @ Vgs":"180nC @ 10V","Product Photos":"AUIRF1324WL","PCN Assembly\/Origin":"AUIRFxx Series Wafer Process 29\/Jul\/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"1.3 mOhm @ 195A, 10V"...