Product Datasheet Search Results:
- AT6000A10
- Advanced Semiconductor, Inc.
- C BAND, 0.4 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
Product Details Search Results:
Advancedsemiconductor.com/AT6000A10
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4.7","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.4000 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1700","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Number of T...
1276 Bytes - 12:33:54, 13 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
2CLA216000A1003.pdf | 0.09 | 1 | Request |