Product Datasheet Search Results:
3 Pages, 119 KB, Scan- AT6000A
- Advanced Semiconductor, Inc.
- C BAND, 0.4 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
3 Pages, 119 KB, Scan- AT6000A01
- Advanced Semiconductor, Inc.
- C BAND, 0.4 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
3 Pages, 119 KB, Scan- AT6000A10
- Advanced Semiconductor, Inc.
- C BAND, 0.4 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
3 Pages, 119 KB, Scan- AT6000A11
- Advanced Semiconductor, Inc.
- C BAND, 0.4 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
3 Pages, 119 KB, Scan- AT6000A15
- Advanced Semiconductor, Inc.
- C BAND, 0.4 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
3 Pages, 119 KB, Scan- AT6000A20
- Advanced Semiconductor, Inc.
- C BAND, 0.4 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
3 Pages, 119 KB, Scan- AT6000A21
- Advanced Semiconductor, Inc.
- C BAND, 0.4 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
3 Pages, 119 KB, Scan- AT6000A31
- Advanced Semiconductor, Inc.
- C BAND, 0.4 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
3 Pages, 119 KB, Scan- AT6000A83
- Advanced Semiconductor, Inc.
- C BAND, 0.4 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
3 Pages, 119 KB, Scan- AT6000A84
- Advanced Semiconductor, Inc.
- C BAND, 0.4 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
Product Details Search Results:
Advancedsemiconductor.com/AT6000A
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4.7","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.4000 pF","Number of Elements":"1","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1700","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Sh...
1314 Bytes - 20:56:19, 10 November 2024
Advancedsemiconductor.com/AT6000A01
{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Frequency Band":"C BAND","Breakdown Voltage-Min":"60 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"4.7","Variable Capacitance Diode Classification":"ABRUPT","Number of Terminals":"2","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.4000 pF","Case Connection":"ISOLATED","Quality Factor-Min":"1700","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Con...
1313 Bytes - 20:56:19, 10 November 2024
Advancedsemiconductor.com/AT6000A10
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4.7","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.4000 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1700","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Number of T...
1276 Bytes - 20:56:19, 10 November 2024
Advancedsemiconductor.com/AT6000A11
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4.7","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.4000 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1700","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Number of T...
1275 Bytes - 20:56:19, 10 November 2024
Advancedsemiconductor.com/AT6000A15
{"Status":"ACTIVE","Package Body Material":"GLASS","Frequency Band":"C BAND","Breakdown Voltage-Min":"60 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"4.7","Variable Capacitance Diode Classification":"ABRUPT","Number of Terminals":"2","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.4000 pF","Case Connection":"ISOLATED","Quality Factor-Min":"1700","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Configura...
1312 Bytes - 20:56:19, 10 November 2024
Advancedsemiconductor.com/AT6000A20
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4.7","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.4000 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1700","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Number of T...
1278 Bytes - 20:56:19, 10 November 2024
Advancedsemiconductor.com/AT6000A21
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"FLAT","Diode Capacitance Ratio-Min":"4.7","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.4000 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1700","Terminal Position":"UNSPECIFIED","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Number...
1281 Bytes - 20:56:19, 10 November 2024
Advancedsemiconductor.com/AT6000A31
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4.7","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.4000 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1700","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Number of T...
1274 Bytes - 20:56:19, 10 November 2024
Advancedsemiconductor.com/AT6000A83
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4.7","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.4000 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1700","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Number of T...
1276 Bytes - 20:56:19, 10 November 2024
Advancedsemiconductor.com/AT6000A84
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4.7","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.4000 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1700","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Number of T...
1276 Bytes - 20:56:19, 10 November 2024
Various/AT6000A
{"C1/C2 Min. Capacitance Ratio":"4.7","V(RRM)(V) Rep.Pk.Rev. Voltage":"60","Semiconductor Material":"Silicon","Q Factor Min.":"1.7k","Package":"Pill-C","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"400f","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
727 Bytes - 20:56:19, 10 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| DATA_SHEET_ACCUTRAK_AT600_COMPACT_MAGNETOSTRICTIVE_LEVEL_TRANSMITTER.pdf | 0.25 | 1 | Request |
