Product Datasheet Search Results:
4 Pages, 41 KB, Original- APT8030B2VR
- Advanced Power Technology
- High voltage N-Channel enhancement mode power MOSFET
4 Pages, 41 KB, Original- APT8030B2VRG
- Microchip Technology
- Trans MOSFET N-CH 800V 27A 3-Pin(3+Tab) T-MAX Tube
4 Pages, 172 KB, Scan- APT8030B2VR
- Microsemi Corp.
- 27 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 41 KB, Original- APT8030B2VRG
- Microsemi
- MOSFET N-CH 800V 27A T-MAX - APT8030B2VRG
Product Details Search Results:
Microchip.com/APT8030B2VRG
1072 Bytes - 13:16:25, 23 November 2024
Microsemi.com/APT8030B2VR
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"2500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"108 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS...
1499 Bytes - 13:16:25, 23 November 2024
Microsemi.com/APT8030B2VRG
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"2500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"108 A","Channel Type":"N-CHAN...
1560 Bytes - 13:16:25, 23 November 2024
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