Product Datasheet Search Results:

AP4800BGM.pdf4 Pages, 95 KB, Original
AP4800BGM
Advanced Power Electronics Corp. Usa
30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
AP4800BGM-HF.pdf4 Pages, 95 KB, Original
AP4800BGM-HF
Advanced Power Electronics Corp. Usa
30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

A-power.com.tw/AP4800BGM
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ROHS COMPLIANT, SOP-8","Pulsed Drain Current-Max (IDM)":"40 A","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Package Style":"SMALL OUTLINE","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURP...
1451 Bytes - 08:54:46, 28 November 2024
A-power.com.tw/AP4800BGM-HF
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"HALOGEN FREE AND ROHS COMPLIANT, SOP-8","Pulsed Drain Current-Max (IDM)":"40 A","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Package Style":"SMALL OUTLINE","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Ty...
1485 Bytes - 08:54:46, 28 November 2024

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