Datasheet.Directory

{"Vds - Drain-Source Breakdown Voltage":"65 V","Transistor Polarity":"N-Channel","Maximum Operating Temperature":"+ 200 C","Brand":"Advanced Semiconductor, Inc.","Id - Continuous Drain Current":"4.25 A","Vgs th - Gate-Source Threshold Voltage":"5 V","Packaging":"Tray","Product Category":"RF MOSFET Transistors","Minimum Operating Temperature":"- 65 C","Pd - Power Dissipation":"80 W","Vgs - Gate-Source Breakdown Voltage":"15 V","Frequency":"895 MHz","Type":"RF Power MOSFET","RoHS":"Details","Manufacturer":"Ad...

{"Terminal Finish":"TIN LEAD","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.25 A","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"65 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package Description":"FM-2","O...

{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Channel Type":"N-CHANNEL","Terminal Form":"FLAT","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Drain Current-Max (ID)":"4.25 A","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"RF POWER","Package...