1
FEATURES
Organized as 64M x 40 (16Meg x 40 x 4 banks) and 64M
x 48 (16Meg x 48 x 4 banks)
Single 3.3V power supply
Maximum frequency: 100 MHz
Operation -40oC to +105oC
LVTTL compatible with multiplexed address
Fully synchronous; all signals registered on positive edge
of system clock
Internal pipelined operation; column address can be
changed every clock cycle
Programmable burst lengths: 1,2,4,8, or full page
Auto-precharge, includes concurrent auto precharge, and
auto-refresh mode
32ms, 8,192-cycle refresh
Operational environment:
- Total dose: 100 krad(Si)
- SEL Immune 111 MeV-cm2/mg
- SEU Event Rate: 1.3E-10 events/bit-day assuming
geosynchronous orbit and Adam’s 90% worst-case
environment
Package options:
- 128-lead Ceramic Quad Flatpack, shallow side-braze
- 128-lead Ceramic Quad Flatpack, deep side-braze
Standard Microcircuit Drawing
- UT8SDMQ64M40: 5962-10229
- UT8SDMQ64M48: 5962-10230
- QML Q and Q+
INTRODUCTION
The UT8SDMQ64M40 and UT8SDMQ64M48 are high
performance, highly integrated Synchronous Dynamic Random
Access Memory (SDRAM) multi-chip modules (MCMs). Total
module density is 2,684,354,560 bits for the 2.5G device and
3,221,225,472 bits for the 3G device. Each bit bank is organized
as 8192 rows by 2048 columns.
Read and write accesses to the DRAM are burst oriented;
accesses start at a selected location and continue for a
programmed number of locations in a programmed sequence.
The programmable READ and WRITE burst lengths (BL) are
1, 2, 4, or 8 locations, or the full page, with a burst terminate
option.
Aeroflex’s SDRAMs are designed to operate at 3.3V. An auto-
refresh mode is provided, along with a power-saving, power-
down mode. All inputs and outputs are LVTTL compatible.
SDRAMs offer significant advances in DRAM operating
execution, including the capability to synchronously burst data
at a high data rate with automatic column-address generation,
to interleave between internal banks to mask precharging time,
and to randomly change column addresses on each clock cycle
during a burst access.
Standard Products
UT8SDMQ64M40 2.5-Gigabit SDRAM MCM
UT8SDMQ64M48 3.0-Gigabit SDRAM MCM
Datasheet
October 18, 2013
Figure 1. Block Diagrams
A[12:0]
BA[1:0]
CLK
CKE
RAS#
CAS#
WE#
CS#
15
DQM0
DQM1
DQM2
DQM3
DQM4
8
8
8
8
8
40
U0
U1 U2 U3U4
DQ[7:0]
DQ[15:8]
DQ[23:16]
DQ[31:24]
DQ[39:32]
SDRAM
16Meg x 8 x4
DQ[7:0](0)
DQ[7:0](1)
DQ[7:0](2)
DQ[7:0](3)
DQ[7:0](4)
A[12:0]
BA[1:0]
CLK
CKE
RAS#
CAS#
WE#
CS#
15
DQM0
DQM1
DQM2
DQM3
DQM4
DQM5
8
8
8
8
8
8
48
U0
U1 U2U3U4 U5
DQ[7:0]
DQ[15:8]
DQ[23:16]
DQ[31:24]
DQ[39:32]
DQ[47:40]
SDRAM
16Meg x 8 x4
DQ[7:0](0)
DQ[7:0](1)
DQ[7:0](2)
DQ[7:0](3)
DQ[7:0](4)
DQ[7:0](5)
3.0Gigabit (64Mx48)
2.5Gigabit (64Mx40)
Table of Contents
Features. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Functional Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..11
Initialization. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Register Definition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Mode Register. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Burst Length (BL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Burst Type. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
CAS Latency (CL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Operating Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
WRITE Burst Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..16
COMMAND INHIBIT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
NO OPERATION (NOP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
LOAD MODE REGISTER. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
ACTIVE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
READ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
PRECHARGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Auto Precharge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 17
BURST TERMINATE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
AUTO REFRESH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Bank/Row Activation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
READs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..20
WRITEs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
PRECHARGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31
Power-Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32
Clock Suspend. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...32
Burst READ/Single WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Concurrent Auto Precharge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..34
READ wth Auto Precharge. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34
WRITE with Auto Precharge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...36
Electrical Specifications. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42
Recommended Operating Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Operational Environment Specifications. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
DC Electrical Characteritics and Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43
IDD Specifications and Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . ..... .43
Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
AC Characteristics and Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .44
AC Functional Characteristics . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. ....45
Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . 46
Timing Diagrams. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..47
Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . .65
Ordering Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . .66
3
List of Figures
Figure 1: Block Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . .1
Figure 2: 128-lead package 2.5G SDRAM Module Pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Figure 3: 128-lead package 3.0G SDRAM Module Pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Figure 4: Mode Register Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Figure 5: CAS Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Figure 6: Activating a Specific Row In a Specific Bank. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . .19
Figure 7: Example Meeting tRCD (MIN) when 2 < tRCD (MIN)/tCK ≤ 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Figure 8: READ Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . 20
Figure 9: CAS Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . 21
Figure 10: Consecutive READ Bursts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .22
Figure 11: Random READ Accesses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . 22
Figure 12: READ-to-WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .23
Figure 13: READ-to-WRITE with Extra Clock Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .24
Figure 14: READ-to-PRECHARGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .25
Figure 15: Terminating a READ Burst . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .25
Figure 16: WRITE Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . ..26
Figure 17: WRITE Burst. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .27
Figure 18: WRITE-to-WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .27
Figure 19: Random WRITE Cycles . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .28
Figure 20: WRITE-to-READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .28
Figure 21: WRITE-to-PRECHARGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .29
Figure 22: Terminating a WRITE Burst . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .30
Figure 23: PRECHARGE Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .31
Figure 24: Power-Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .32
Figure 25: CLOCK SUSPEND During WRITE Burst . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .33
Figure 26: CLOCK SUSPEND During READ Burst . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .33
Figure 27: READ with Auto Precharge Interrupted by a READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . .. . . . .34
Figure 28: READ with Auto Precharge Interrupted by a WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . .35
Figure 29: WRITE with Auto Precharge Interrupted by a READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . .36
Figure 30: WRITE with Auto Precharge Interrupted by a WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .. . . . . .37
Figure 31: Initialize and Load Mode Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .. . . . .47
Figure 32: Power-Down Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... . . . . . . . . . . .48
Figure 33: Clock Suspend Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . .. . . . . .49
Figure 34: Auto-Refresh Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . .. . . . . .50
Figure 35: READ – Without Auto Precharge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .. . . . .. . . . . .51
Figure 36: READ – With Auto Precharge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . .. . . . . ..52
Figure 37: Single READ – Without Auto Precharge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . .. . . . . .53
Figure 38: Single READ – With Auto Precharge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . .. . . . . .54
Figure 39: Alternating Bank Read Accesses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .. . . . . .55
Figure 40: READ – Full-Page Burst . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .. . . . . .56
Figure 41: READ DQM Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . ..57
Figure 42: WRITE – Without Auto Precharge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . .. . . . . . . . .. . . . . .58
Figure 43: WRITE – With Auto Precharge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . ..59
Figure 44: Single WRITE – Without Auto Precharge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .. . .60
Figure 45: Single WRITE with Auto Precharge. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . ..61
Figure 46: Alternating Bank WRITE Accesses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . .62
Figure 47: WRITE – Full-Page Burst . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . .. . . . . ..63
Figure 48: WRITE – DQM Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .. . . . . ..64
Figure 49: 128 - CQFP Package Drawing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . .. . . . 65
Figure 50: 128 - Dual Sided Quad Flatpack. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . .. .68
Figure 51: Recommended Universal Footprint and Lead Forming Guidelines. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . .. .69
4
List of Tables
Table 1: 2.5G SDRAM Module Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . .6
Table 2: 3.0G SDRAM Module Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . 9
Table 3: Burst Definition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . .. . . . . .14
Table 4: CAS Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... . . . .. . . . . .15
Table 5: Truth Table 1 – Commands and DQM Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . ... . . . .. . . . . . .16
Table 6: Truth Table 2 – CKE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . ... . . . .. . . . 38
Table 7: Truth Table 3 – Current State Bank n, Command to Bank n. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . .. . . . . . . . .. . . . . .38
Table 8: Truth Table 4 – Current State Bank n, Command to Bank m . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . .. . . . . . . .. . . . . .40
5
DEVICE PACKAGE PINOUT DRAWING
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
14
105
104
103
102
101
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
1
106
107
108
109
110
128
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
64
63
62
61
60
42
VDDQ
VSSQ
VSS
VDD
VDDQ
VSSQ
VSS
VDD
VDDQ
VSSQ
VSS
VDD
VDDQ
VSSQ
VDDQ
DQM3
VSS
DQ3(3)
VSS
DQ4(3)
VSS
DQ2(3)
VSS
DQ5(3)
VSS
DQ1(3)
VSS
DQ6(3)
VSS
DQ0(3)
VSS
DQ7(3)
VSS
VDDQ
VSSQ
VSS
VDD
VDDQ
VSSQ
VSS
VDD
VSSQ
VDDQ
VDD
VSS
VSSQ
VDDQ
VDD
VSS
VSSQ
VDDQ
A4
A3
A5
A2
A6
A1
A7
A0
A8
A10/AP
A9
BA1
A11
BA0
A12
CS#
CKE
RAS#
CLK
CAS#
WE#
VDDQ
VSSQ
VSS
VDD
VDDQ
VSSQ
VSS
VDD
VDDQ
VSSQ
DQ7(0)
DQ7(1)
DQ0(0)
DQ0(1)
DQ6(0)
DQ6(1)
DQ1(0)
DQ1(1)
DQ5(0)
DQ5(1)
DQ2(0)
DQ2(1)
DQ4(0)
DQ4(1)
DQ3(0)
DQ3(1)
DQM0
DQM1
VDD
VSS
VSSQ
VDDQ
VSSQ
DQ7(4)
DQ7(2)
DQ0(4)
DQ0(2)
DQ6(4)
DQ6(2)
DQ1(4)
DQ1(2)
DQ5(4)
DQ5(2)
DQ2(4)
DQ2(2)
DQ4(4)
DQ4(2)
DQ3(4)
DQ3(2)
DQM4
DQM2
NC
VSSQ
VDDQ
VDD
VSS
Figure 2: 128-lead Package 2.5G (512Mb x 5) SDRAM Module
6
2.5G (512Mb x 5) SDRAM Module
Table 1. Pin Descriptions
Pin
Numbers Symbols Type Description
77 CLK Input Clock: CLK is driven by the system clock. All SDRAM input signals are sampled on
the positive edge of CLK. CLK also increments the internal burst counter and
controls the output registers.
79 CKE Input Clock enable: CKE activates (HIGH) and deactivates (LOW) the CLK signal.
Deactivating the clock provides PRECHARGE power-down, ACTIVE power-down
(row active in any bank), or CLOCK SUSPEND operation (burst/access in progress).
CKE is synchronous except after the device enters power-down where CKE becomes
asynchronous until after exiting the same mode. The input buffers, including CLK, are
disabled during power-down providing low standby power.
80 CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the
command decoder. All commands are masked when CS# is registered HIGH. CS#
provides for external bank selection on systems with multiple banks. CS# is
considered part of the command code.
78, 76, 75 RAS#, CAS#,
WE#
Input Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command
being entered.
112, 16,
111, 59, 58
DQM(4:0) Input Input/output mask: DQM is an input mask signal for write accesses and an output
enable signal for read accesses. Input data is masked when DQM is sampled HIGH
during a WRITE cycle. The output buffers are placed in a High-Z state (two-clock
latency) when DQM is sampled HIGH during a READ cycle.
84 ,82 BA (1:0) Input Bank address inputs: BA0 and BA1 define to which bank the ACTIVE, READ, WRITE,
or PRECHARGE command is being applied.
81, 83, 86,
85, 87, 89,
91, 93, 95,
94, 92, 90,
88
A(12:0) Input Address inputs: A0–A12 are sampled during the ACTIVE command (row-address
A0–A12) and READ/WRITE command (column-address A0–A9, A11); with A10
defining auto precharge) to select one location out of the memory array in the respective
bank. A10 is sampled during a PRECHARGE command to determine whether all banks
are to be precharged (A10[HIGH]) or bank selected by (A10 [LOW]). The address inputs
also provide the opcode during a LOAD MODE REGISTER command.
42, 46, 50,
54, 56, 52,
48, 44
DQ[7.0](0) Data I/O Data input/output
43, 47, 51,
55, 57, 53,
49, 45
DQ[7:0](1) Data I/O Data input/output
127, 123,
119, 115,
113, 117,
121, 125
DQ[7:0](2) Data I/O Data input/output
32, 28, 24,
20, 18, 22,
26, 30
DQ[7:0](3) Data I/O Data input/output
7
128, 124,
120, 116,
114, 118,
122, 126
DQ[7:0](4) Data I/O Data input/output
110 NC No connect: This pin should be left unconnected.
1, 5, 9, 13,
15, 34, 38,
63, 66, 70,
74, 96,
100, 104,
108
VDDQ Supply DQ power: Isolated DQ power to the die for improved noise immunity.
2, 6, 10,
14, 35, 39,
62, 64, 65,
69, 73, 97,
101, 105,
109
VSSQ Supply DQ ground: Isolated DQ ground to the die for improved noise immunity.
4, 8, 12,
37, 41, 60,
67, 71, 99,
103, 107
VDD Supply Power supply: +3.3V +0.3V
3, 7, 11,
17, 19, 21,
23, 25, 27,
29, 31, 33,
36, 40, 61,
68, 72, 98,
102, 106
VSS Supply Ground
Table 1. Pin Descriptions
Pin
Numbers Symbols Type Description
8
PACKAGE DRAWING
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
14
105
104
103
102
101
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
1
106
107
108
109
110
128
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
64
63
62
61
60
42
VDDQ
VSSQ
VSS
VDD
VDDQ
VSSQ
VSS
VDD
VDDQ
VSSQ
VSS
VDD
VDDQ
VSSQ
VDDQ
DQM3
DQM5
DQ3(3)
DQ3(5)
DQ4(3)
DQ4(5)
DQ2(3)
DQ2(5)
DQ5(3)
DQ5(5)
DQ1(3)
DQ1(5)
DQ6(3)
DQ6(5)
DQ0(3)
DQ0(5)
DQ7(3)
DQ7(5)
VDDQ
VSSQ
VSS
VDD
VDDQ
VSSQ
VSS
VDD
VSSQ
VDDQ
VDD
VSS
VSSQ
VDDQ
VDD
VSS
VSSQ
VDDQ
A4
A3
A5
A2
A6
A1
A7
A0
A8
A10/AP
A9
BA1
A11
BA0
A12
CS#
CKE
RAS#
CLK
CAS#
WE#
VDDQ
VSSQ
VSS
VDD
VDDQ
VSSQ
VSS
VDD
VDDQ
VSSQ
DQ7(0)
DQ7(1)
DQ0(0)
DQ0(1)
DQ6(0)
DQ6(1)
DQ1(0)
DQ1(1)
DQ5(0)
DQ5(1)
DQ2(0)
DQ2(1)
DQ4(0)
DQ4(1)
DQ3(0)
DQ3(1)
DQM0
DQM1
VDD
VSS
VSSQ
VDDQ
VSSQ
DQ7(4)
DQ7(2)
DQ0(4)
DQ0(2)
DQ6(4)
DQ6(2)
DQ1(4)
DQ1(2)
DQ5(4)
DQ5(2)
DQ2(4)
DQ2(2)
DQ4(4)
DQ4(2)
DQ3(4)
DQ3(2)
DQM4
DQM2
NC
VSSQ
VDDQ
VDD
VSS
Figure 3: 128-lead Package 3.0G (512Mb x 6) SDRAM Module
9
3.0G (512Mb x 6) SDRA M Module
Table 2. Pin Descriptions
Pin
Numbers Symbols Type Description
77 CLK Input Clock: CLK is driven by the system clock. All SDRAM input signals are sampled on
the positive edge of CLK. CLK also increments the internal burst counter and
controls the output registers.
79 CKE Input Clock enable: CKE activates (HIGH) and deactivates (LOW) the CLK signal.
Deactivating the clock provides PRECHARGE power-down, ACTIVE power-down (row
active in any bank), or CLOCK SUSPEND operation (burst/access in progress). CKE is
synchronous except after the device enters power-down where CKE becomes asynchronous
until after exiting the same mode. The input buffers, including CLK, are disabled during
power-down providing low standby power. CKE may be tied HIGH.
80 CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the
command decoder. All commands are masked when CS# is registered HIGH. CS#
provides for external bank selection on systems with multiple banks. CS# is
considered part of the command code.
75, 76, 78 RAS#,
CAS#,
WE#
Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command
being entered.
16, 17, 58,
59, 111,
112
DQM(5:0) Input Input/output mask: DQM is an input mask signal for write accesses and an output
enable signal for read accesses. Input data is masked when DQM is sampled HIGH
during a WRITE cycle. The output buffers are placed in a High-Z state (two-clock
latency) when DQM is sampled HIGH during a READ cycle.
82 ,84 BA(1:0) Input Bank address inputs: BA0 and BA1 define to which bank the ACTIVE, READ, WRITE,
or PRECHARGE command is being applied.
81, 83, 85,
86, 87, 88,
89, 90,
91,92, 93,
94, 95
A(12:0) Input Address inputs: A0–A12 are sampled during the ACTIVE command (row-address
A0–A12) and READ/WRITE command (address A0–A9, A11 with A10 defining auto
precharge) to select one location out of the memory array in the respective bank. A10 is
sampled during a PRECHARGE command to determine whether all banks are to be
precharged (A10[HIGH]) or bank selected by (A10 [LOW]). The address inputs also provide
the opcode during a LOAD MODE REGISTER command.
42, 44, 46,
48, 50, 52,
54, 56
DQ(7:0)(0) Data I/O Data input/output
43, 45, 47,
49, 51, 53,
55, 57
DQ[7:0](1) Data I/O Data input/output
113, 115,
117, 119,
121, 123,
125, 127
DQ[7:0](2) Data I/O Data input/output
18, 20, 22,
24, 26, 28,
30, 32
DQ[7:0](3) Data I/O Data input/output
10
114, 116,
118,120,
122,
124,126,
128
DQ[7:0](4) Data I/O Data input/output
19, 21, 23,
25, 27, 29,
31, 33
DQ[7:0](5) Data I/O Data input/output
110 NC No connect: This pin should be left unconnected.
1, 5, 9, 13,
15, 34, 38,
63, 66, 70,
74, 96,
100, 104,
108
VDDQ Supply DQ power: Isolated DQ power to the die for improved noise immunity.
2, 6, 10,
14, 35, 39,
62, 64, 65,
69, 73, 97,
101, 105,
109
VSSQ Supply DQ ground: Isolated DQ ground to the die for improved noise immunity.
4, 8, 12,
37, 41, 60,
67, 71, 99,
103, 107
VDD Supply Power supply: +3.3V ±0.3V.
3, 7, 11,
36, 40, 61,
68, 72, 98,
102, 106
VSS Supply Ground
Table 2. Pin Descriptions
Pin
Numbers Symbols Type Description
11
FUNCTIONAL DESCRIPTION
The 2.5G and 3.0G SDRAMs are organized as 16M x 40 x 4 banks and 16M x 48 x 4 banks that operate on 3.3V using a synchronous
interface (signals are registered on the positive CLK edge). Read and write accesses to the SDRAM are burst oriented. Accesses start
at address locations selected and continue for programmed number of locations in a programmed sequence. Device accesses start
with the registration of the ACTIVE command followed by a READ or WRITE command. Some address and both bank bits are reg-
istered coincident to the ACTIVE command registration and are used to select the row and bank locations, while column location to
initiate burst access address bits A0-A9 are registered at time of READ/WRITE command.
Previous to normal operation the device must initialized properly.
Initialization
The SDRAMs must be powered up and initialized in a certain manner. Failure to initial devices may result in unpredictable behavior.
Once stable power is applied to VDD and VDDQ (simultaneously), and the clock is running and stable (cycling within specified pa-
rameters) the device requires a minimum 100s delay prior to issuing any command other than NOP or COMMAND INHIBIT. At
some time during this period the COMMAND INHIBIT or NOP can be issued and should continue through the end of the 100s
period. After the delay has been completed with at least one COMMAND INHIBIT or NOP command, a PRECHARGE command
should be applied. All banks must then be precharged, thereby placing all banks in the device into the idle state. Once in the idle state,
two AUTO REFRESH cycles must be performed. After the AUTO REFRESH cycles are complete, the SDRAM is ready for mode
register programming. Because the mode register powers up in an unknown state, it should be loaded prior to applying any opera-
tional command.
The recommended power-up sequence for SDRAMs:
1. Simultaneously apply power to VDD and VDDQ.
2. Assert and hold CKE at a LVTTL logic LOW since all inputs and outputs are LVTTL-compatible.
3. Provide stable CLOCK signal. Stable clock is defined as a signal cycling within timing constraints specified for the clock pin.
4. Wait at least 100s prior to issuing any command other than a COMMAND INHIBIT or NOP.
5. Starting at some point during this 100s period, bring CKE HIGH. Continuing at least through the end of this period, one or more
COMMAND INHIBIT or NOP commands must be applied.
6. Perform a PRECHARGE ALL command.
7. Wait at least tRP time; during this time, NOPs or DESELECT commands must be given. All banks will complete their precharge,
thereby placing the device in the all banks idle state.
8. Issue an AUTO REFRESH command.
9. Wait at least tRFC time, during which only NOPs or COMMAND INHIBIT commands are allowed.
10. Issue an AUTO REFRESH command.
11. Wait at least tRFC time, during which only NOPs or COMMAND INHIBIT commands are allowed.
12. The SDRAM is now ready for mode register programming. Because the mode register will power up in an unknown state, it
should be loaded with desired bit values prior to applying any operational command. Using the LMR command, program the mode
register. The mode register is programmed via the MODE REGISTER SET command with BA1 = 0, BA0 = 0 and retains the stored
information until it is programmed again or the device loses power. Not programming the mode register upon initialization will result
in default settings which may not be desired. Outputs are guaranteed High-Z after the LMR command is issued. Outputs should be
High-Z already before the LMR command is issued.
13. Wait at least tMRD time, during which only NOP or DESELECT commands are allowed.
At this point, the DRAM is ready for any valid command.
Note: If desired, more than two AUTO REFRESH commands can be issued in the sequence. After steps 9 and 10 are complete, repeat
them until the desired number of AUTO REFRESCH + tRFC loops is achieved.
REGISTER DEFINITION
Mode Regi s ter
The mode register is used to set a specific mode of operation for the SDRAM. These definitions include Burst length (BL), the CAS
latency (CL), and the write burst mode as shown in Figure 4. The mode register is programmed using the LOAD MODE REGISTER
command and retains the stored setting information until either reprogrammed or device power is lost. Mode register bits M0-M2
12
specifies the BL, M3 specifies the type of burst (sequential or interleaved), M4-M6 specify the CL, M7 and M8 specifies the operation
mode, M9 specifies the write burst mode, M10 and M11 are reserved. Address M12 is undefined, but should be driven low during
mode register programming. All references to bit(s) Mx in this document affect the mode register.
Burst Length (BL)
All read and write activity to the SDRAMs are burst oriented. The burst mode is selected by programming BL as described above.
Burst length of 1, 2, 4, and 8 locations are available for both sequential and interleaved burst types. A full page burst is also available
in sequential mode only and is used in conjunction with BURST TERMINATE command to generate arbitrary burst lengths. Re-
served states for BL should not be used as they may result in undefined operations.
Whenever a read or write command is issued a block of columns is selected that is equal to the BL. All access for that burst takes
place within this block, meaning that the burst wraps within the block if a boundary is reached. The block is uniquely selected by A1-
A9, and A11when BL = 2, A2-A9, and A11when BL = 4, A3-A9, and A11when BL = 8. The remaining least significant address bits
are used to select the starting location within the block. Full-page bursts wrap within the page if the boundary is reached.
Burst Type
Accesses within a given burst may be programmed to be either sequential or interleaved: this is referred to as the burst type and is
selected via bit M3.
The ordering of the accesses with the burst is determined by BL1, the burst type and the staring column address, as shown in Table 3.
13
Notes:
1. Program M12, M11, M10 = “0, 0, 0” to ensure compatibility with future devices.
M9 Write Burst Mode
0Programmed burst length
1Single location access
Figure 4: Mode Register Definition
A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
12 11 10 9 8 7 6 5 4 3 2 1 0
Reserved1WB Op Mode CAS Latency BT Burst Length
M6 M5 M4 CAS Latency
0 0 0 Reserved
001 Reserved
0 1 0 2
0 1 1 3
100 Reserved
101 Reserved
110 Reserved
111 Reserved
M8 Burst Type
0Sequential
1Interleaved
M2 M1 M0
Burst Length
M3 = 0 M3 = 1
0 0 0 1 1
0 0 1 2 2
0 1 0 4 4
0 1 1 8 8
100 Reserved Reserved
101 Reserved Reserved
110 Reserved Reserved
111 Full Page Reserved
M8 M7 M6-M0 Operating Mode
0 0 Defined Standard Operation
---All other states reserved
Address Bus
Mode Register (Mx)
14
Notes:
1. For full-page accesses: y = 2,048
2. For BL = 2, A1–A9, A11 select the block-of-two burst; A0 selects the starting column within the block.
3. For BL = 4, A2–A9, A11 select the block-of-four burst; A0–A1 select the starting column within the block.
4. For BL = 8, A3–A9, A-11 select the block-of-eight burst; A0–A2 select the starting column within the block.
5. For a full-page burst, the full row is selected and A0–A9, A11 select the starting column.
6. Whenever a boundary of the block is reached within a given sequence above, the following access wraps within the block.
7. For BL = 1, A0–A9, A11 select the unique column to be accessed, and mode register bit M3 is ignored.
Table 3. Burst Definition
Burst
Length Starting Column
Address
Order of Accesses Within a Burst
Type = Sequential Type = Interleaved
2 - - A0
- - 0 0-1 0-1
- - 1 1-0 1-0
4 - A1 A0
- 0 0 0-1-2-3 0-1-2-3
- 0 1 1-2-3-0 1-0-3-2
- 1 0 2-3-0-1 2-3-0-1
- 1 1 3-0-1-2 3-2-1-0
8A2 A1 A0
000 0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7
001 1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6
010 2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5
011 3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4
100 4-5-6-7-0-1-2-3 4-5-6-7-0-1-2-3
101 5-6-7-0-1-2-3-4 5-4-7-6-1-0-3-2
110 6-7-0-1-2-3-4-5 6-7-4-5-2-3-0-1
111 7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0
Full page
(y)
n = A0-A12/11/9
(location 0-y)
Cn, Cn + 1,
Cn + 2
Cn + 3
Cn + 4...
...Cn - 1
Cn...
Not Supported
15
CAS Latency (CL)
CL is the delay, in clock cycles, between the registration of a READ command and the availability of the first piece of output data.
The latency can be set to two or three clocks.
If a READ command is registered at clock edge n and the latency is m clocks, the data will be available by clock edge n + m. The
DQs will start driving as a result of the clock edge one cycle earlier (n + m - 1), and provided that the relevant access times are met,
the data will be valid by clock edge n + m. For example, as shown in Figure 5, assuming that the clock cycle time is such that all
relevant access times are met, if a READ command is registered at T0 and the latency is programmed to two clocks, the DQs start
driving after T1 and the data will be valid by T2. Table 4 indicates the operating frequencies at which each CL setting can be used.
Reserved states should not be used as unknown operation or incompatibility with future versions may result.
Table 4. CAS Latency
Allowable Operating Frequency (MHz)
Frequency Latency
< 100 CL = 2
Figure 5: CAS Latency
READ NOP NOP
Data
T3T1
T0
tOH
tAC
tLZ
CL = 2
CLK
Command
DQ
READ NOP NOP
Data
T3
T2T1
T0
tOH
tAC
tLZ
CL = 3
CLK
DQ
NOP
Command
Don’t Care
Undefined
16
Operating Mode
The normal operating mode is selected by setting M7 and M8 to zero; the other combinations of values for M7 and M8 are reserved
for future use and/or test modes. The programmed burst length applies to both READ and WRITE bursts. Test modes and reserved
states should not be used because unknown operation or incompatibility with future versions may result.
WRITE Burst Mode
When M9 = 0, BL programmed via M0–M2 applies to both READ and WRITE bursts; when M9 = 1, the programmed burst length
applies to READ burst, but write accesses are single-location (nonburst) accesses.
COMMANDS
Table 5 provides a quick reference of available commands. This is followed by a written description of each command. Three
additional Truth Tables appear in the Operations section; these tables provide current state/next state information.
Notes:
1. CKE is HIGH for all commands shown.
2. A0–A11 define the op-code written to the mode register, and A12 should be driven LOW.
3. A0–A12 provide row address, and BA0, BA1 determine which bank is made active.
4. A0–A9, A11 provide column address; A10 HIGH enables the auto precharge feature (nonpersistent), while A10 LOW disables the auto precharge feature; BA0, BA1
determine which bank is being read from or written to.
5. A10 LOW: BA0, BA1 determine the bank being precharged. A10 HIGH: All banks precharged and BA0, BA1 are “Don’t Care.”
6. This command is AUTO REFRESH if CKE is HIGH.
7. Internal refresh counter controls row addressing; all inputs and I/Os are “Don’t Care” except for CKE.
8. Activates or deactivates the DQs during WRITEs (zero-clock delay) and READs (two-clock delay).
COMMAND INHIBIT
The COMMAND INHIBIT function prevents new commands from being executed by the SDRAM, regardless of whether the CLK
signal is enabled. The SDRAM is effectively deselected. Operations already in progress are not affected.
NO OPERATION (N OP)
The NO OPERATION (NOP) command is used to perform a NOP to an SDRAM that is selected (CS# is LOW). This prevents
unwanted commands from being registered during idle or wait states. Operations already in progress are not affected.
Table 5: Truth Table 1 Commands and DQM Operation
Name (Function) CS# RAS# CAS# WE# DQM Address DQs Notes
COMMAND INHIBIT (NOP) H X X X X X X
NO OPERATION (NOP) L H H H X X X
ACTIVE (Select bank and activate row) L L H H X Bank/
row
X 3
READ (Select bank and column, and start READ burst) L H L H L/H8Bank/
col
X 4
WRITE (Select bank and column, and start WRITE burst) L H L L L/H8Bank/
col
Valid 4
BURST TERMINATE L H H L X X Active
PRECHARGE (Deactivate row in bank or banks) L L H L X Code X 5
AUTO REFRESH L L L H X X X 6, 7
LOAD MODE REGISTER L L L L X Op-code X 4
Write enable/output enable -- -- -- -- L-- Active 8
Write inhibit/output High-Z -- -- -- -- H-- High-Z 8
17
LOAD MODE REGISTER
The mode register is loaded via inputs A0–A11 (A12 should be driven LOW). See “Mode Register” on page 13. The LOAD MODE
REGISTER command can only be issued when all banks are idle and a subsequent executable command cannot be issued until
tMRD is met.
ACTIVE
The ACTIVE command is used to open (or activate) a row in a particular bank for a subsequent access. The value on the BA0, BA1
inputs selects the bank and the address provided on inputs A0–A12 selects the row. This row remains active (or open) for accesses
until a PRECHARGE command is issued to that bank. A PRECHARGE command must be issued before opening a different row in
the same bank.
READ
The READ command is used to initiate a burst read access to an active row. The value on the BA0, BA1 inputs selects the bank and
the address provided on inputs; A0–A9, A11 selects the starting column location. The value on input A10 determines whether auto
precharge is used. If auto precharge is selected, the row being accessed will be precharged at the end of the READ burst; if auto
precharge is not selected, the row remains open for subsequent accesses. Read data appears on the DQs subject to the logic level on
the DQM inputs two clocks earlier. If a given DQM signal was registered HIGH, the corresponding DQs will be High-Z two clocks
later; if the DQM signal was registered LOW, the DQs provides valid data.
WRITE
The WRITE command is used to initiate a burst write access to an active row. The value on the BA0, BA1 inputs selects the bank,
and the address provided on inputs A0–A9, A11 selects the starting column location. The value on input A10 determines whether
auto precharge is used. If auto precharge is selected, the row being accessed will be precharged at the end of the WRITE burst; if
auto precharge is not selected, the row remains open for subsequent accesses. Input data appearing on the DQs is written to the
memory array subject to the DQM input logic level appearing coincident with the data. If a given DQM signal is registered LOW,
the corresponding data will be written to memory; if the DQM signal is registered HIGH, the corresponding data inputs will be
ignored and a WRITE will not be executed to that byte/column location.
PRECHARGE
The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will
be available for a subsequent row access at a specified time (tRP) after the PRECHARGE command is issued. Input A10 determines
whether one or all banks are to be precharged, and in the case where only one bank is to be precharged, inputs BA0, BA1 select the
bank. Otherwise BA0, BA1 are treated as “Don’t Care.” After a bank has been precharged, it is in the idle state and must be
activated prior to any READ or WRITE commands being issued to that bank.
Auto Precharge
Auto precharge is a feature that performs the same individual-bank PRECHARGE function described above, without requiring an
explicit command. This is accomplished by using A10 to enable auto precharge in conjunction with a specific READ or WRITE
command. A PRECHARGE of the bank/row that is addressed with the READ or WRITE command is automatically performed
upon completion of the READ or WRITE burst, except in the full-page burst mode, where auto precharge does not apply. Auto
precharge is non-persistent in that it is either enabled or disabled for each individual READ or WRITE command.
Auto precharge ensures that the precharge is initiated at the earliest valid stage within a burst. The user must not issue another
command to the same bank until the precharge time (tRP) is completed. This is determined as if an explicit PRECHARGE
command was issued at the earliest possible time, as described for each burst type in the Operations section.
BURST TERMINATE
The BURST TERMINATE command is used to truncate either fixed-length or full-page bursts. The most recently registered READ
or WRITE command prior to the BURST TERMINATE command will be truncated, as shown in the “Operations” section on
page 17. The BURST TERMINATE command does not precharge the row; the row will remain open until a PRECHARGE
18
command is issued.
AUTO REFRESH
AUTO REFRESH is used during normal operation of the SDRAM and is analogous to CAS#-BEFORE-RAS# (CBR) REFRESH in
conventional DRAMs. This command is nonpersistent, so it must be issued each time a refresh is required. All active banks must
be PRECHARGED prior to issuing an AUTO REFRESH command. The AUTO REFRESH command should not be issued until the
minimum tRP has been met after the PRECHARGE command as shown in the Operations section.
The addressing is generated by the internal refresh controller. This makes the address bits “Don’t Care” during an AUTO REFRESH
command. The 512Mb SDRAM requires 8,192 AUTO REFRESH cycles every 32ms (tREF). Providing a distributed AUTO
REFRESH command every 3.9μs will meet the refresh requirement and ensure that each row is refreshed. Alternatively, 8,192 AUTO
REFRESH commands can be issued in a burst at the minimum cycle rate (tRC), once every 32ms.
OPERATIONS
Bank/Row Activation
Before any READ or WRITE commands can be issued to a bank within the SDRAM, a row in that bank must be “opened.” This is
accomplished via the ACTIVE command which selects both the bank and the row to be activated (see Figure 6).
After opening a row (issuing an ACTIVE command), a READ or WRITE command may be issued to that row, subject to the tRCD
specification. tRCD (MIN) should be divided by the clock period and rounded up to the next whole number to determine the earliest
clock edge after the ACTIVE command on which a READ or WRITE command can be entered. For example, a tRCD specification of
20ns with a 125 MHz clock (8ns period) results in 2.5 clocks, rounded to 3. This is reflected in Figure 7, which covers any case where
2 < tRCD (MIN)/tCK ≤ 3 (the same procedure is used to convert other specification limits from time units to clock cycles). A
subsequent ACTIVE command to a different row in the same bank can only be issued after the previous active row has been “closed”
(precharged). The minimum time interval between successive ACTIVE commands to the same bank is defined by tRC.
19
Figure 6: Activating a Specific Row in a Specific Bank
Don’t Care
Row Address
Bank Address
T0
CLK
CKE
CS#
RAS#
CAS#
WE#
Address
BA
Figure 7: Example Meeting tRCD (MIN) when 2 < tRCD (MIN)/tCK < 3
Don’t Care
Active NOP NOP Read or Write
T3
T2
T1T0
tRCDtRCD
CLK
Command
20
Upon completion of a burst, assuming no other commands have been initiated, the DQs will go High-Z. A full-page burst will
continue until terminated (at the end of the page, it wraps to the start address and continue). Data from any READ burst may be
truncated with a subsequent READ command, and data from a fixed-length READ burst may be immediately followed by data from
a READ command.
In either case, a continuous flow of data can be maintained. The first data element from the new burst either follows the last element
of a completed burst or the last desired data element of a longer burst that is being truncated. The new READ command should be
issued x cycles before the clock edge at which the last desired data element is valid where x = CL - 1. This is shown in Figure 9 for
CL = 2 and CL = 3; data element n + 3 is either the last of a burst of four or the last desired of a longer burst.
The SDRAM uses a pipelined architecture and, therefore, does not require the 2n rule associated with a pre-fetch architecture. A
READ command can be initiated on any clock cycle following a previous READ command. Full-speed random read accesses can
be performed to the same bank, as shown in Figure 11, or each subsequent READ may be performed to a different bank.
Figure 9: CAS Latency
READ NOP NOP
Data
T3T1
T0
tOH
tAC
tLZ
CL = 2
CLK
Command
DQ
READ NOP NOP
Data
T3
T2T1
T0
tOH
tAC
tLZ
CL = 3
CLK
DQ
NOP
Command
Don’t Care
Undefined
21
Figure 10: Consecutive READ Bursts
READ NOP NOP NOP READ NOP NOP
Dout n n+1 n+2 n+3 Dout b
Dout n n+1 n+2 n+3 Dout b
CL = 3
CL = 2
Notes:
1. Each READ Command may be to any bank. DQM is Low.
T0 T1 T2 T3 T4 T5 T6 T7
CLK
Command
Address
DQ(CL=2)
DQ(CL=3)
Don’t Care
Transitioning Data
BANK
COL n BANK
COL b
READ NOP NOP NOP READ NOP NOP
BANK
Dout n Dout a Dout x Dout m
Dout n Dout a Dout x Dout m
T6T5T4T3T2T1T0
CL = 3
CL = 2
Notes:
1.
Each READ Command may be to any bank. DQM is Low.
CLK
Command
Address
DQ(CL=2)
DQ(CL=3)
Don’t Care
Transitioning Data
COL n BANK
COL a BANK
COL x BANK
COL m
Figure 11: Random READ Accesses
22
Data from any READ burst may be truncated with a subsequent WRITE command, and data from a fixed-length READ burst may
be immediately followed by data from a WRITE command (subject to bus turnaround limitations). The WRITE burst may be
initiated on the clock edge immediately following the last (or last desired) data element from the READ burst, provided that I/O
contention can be avoided. In a given system design, there may be a possibility that the device driving the input data will go Low-Z
before the SDRAM DQs go High-Z. In this case, at least a single-cycle delay should occur between the last read data and the
WRITE command.
The DQM input is used to avoid I/O contention, as shown in Figure 12 and Figure 13. The DQM signal must be asserted (HIGH) at
least two clocks prior to the WRITE command (DQM latency is two clocks for output buffers) to suppress dataout from the READ.
After the WRITE command is registered, the DQs go High-Z (or remain High-Z), regardless of the state of the DQM signal,
provided the DQM was active on the clock just prior to the WRITE command that truncated the READ command. If not, the second
WRITE will be an invalid WRITE. For example, if DQM was LOW during T4 in Figure 13, then the WRITEs at T5 and T7 would
be valid, while the WRITE at T6 would be invalid.
The DQM signal must be de-asserted prior to the WRITE command (DQM latency is zero clocks for input buffers) to ensure that the
written data is not masked. Figure 12 shows the case where the clock frequency allows for bus contention to be avoided without add-
ing a NOP cycle, and Figure 13 shows the case where the additional NOP is needed.
Figure 12: READ-to-WRITE
READ NOP NOP NOP WRITE
BANK
Dout n Din b
T5T4T3T2T1T0
tHZ tDS
tCK
Notes:
1. CL = 3 is used for illustration. The READ or WRITE Command may be to any bank.
CLK
DQM
Command
Address
DQ
If a burst of one is used, DQM is not required.
Don’t Care
Transitioning Data
COL n BANK
COL b
23
A fixed-length READ burst may be followed by, or truncated with, a PRECHARGEcommand to the same bank (provided that auto
precharge was not activated), and a full page burst may be truncated with a PRECHARGE command to the same bank. The
PRECHARGE command should be issued x cycles before the clock edge at which the last desired data element is valid, where x =
CL - 1. This is shown in Figure 14 for each possible CL; data element n + 3 is either the last of a burst of four or the last desired of
a longer burst. Following the PRECHARGE command, a subsequent command to the same bank cannot be issued until tRP is met.
Note: Part of the row precharge time is hidden during the access of the last data element(s).
In the case of a fixed-length burst being executed to completion, a PRECHARGE command issued at the optimum time (as
described above) provides the same operation that would result from the same fixed-length burst with auto precharge. The
disadvantage of the PRECHARGE command is that it requires the command and address buses be available at the appropriate time
to issue the command. The advantage of the PRECHARGE command is it can be used to truncate fixed-length or full-page bursts.
Full-page READ bursts can be truncated with the BURST TERMINATE command, and fixed-length READ bursts may be
truncated with a BURST TERMINATE command, provided that auto precharge was not activated. The BURST TERMINATE
command should be issued x cycles before the clock edge at which the last desired data element is valid, where x = CL - 1. This is
shown in Figure 15 for each possible CL; data element n + 3 is the last desired data element of a longer burst.
Figure 13: READ-to-WRITE with Extra Clock Cycle
Don’t Care
Transitioning Data
READ NOP NOP NOP NOP WRITE
BANK
Dout n Din b
T5T4T3T2T1T0
tHZ tDS
tCKtCK
Notes:
1.
CLK
DQM
Command
Address
DQ
If a burst of one is used, DQM is not required
CL = 3 is used for illustration. The READ or WRITE Command may be to any bank.
COL n BANK
COL b
24
Figure 14: READ-to-PRECHARGE
READ NOP NOP NOP PRECHARGE NOP NOP ACTIVE
Bank a, Col n Bank (a or all) Bank a, ROW
Dout n n+1 n+2 n+3
Dout n n+1 n+2 n+3
CL = 3
CL = 2
Notes:
1.
DQM is Low.
T0 T1 T2 T3 T4 T5 T6 T7
CLK
Command
Address
DQ(CL = 2)
DQ(CL = 3)
Don’t Care
Transitioning Data
Figure 15: Terminating a READ Burst
READ NOP NOP NOP
BURST
NOP NOP
BANK COL n
Dout n n+1 n+2 n+3
Dout n n+1 n+2 n+3
T6T5T4T3T2T1T0
CL = 3
CL = 2
Notes:
1.
DQM is Low.
CLK
Command
Address
DQ(CL=2)
DQ(CL=3)
TERMINATE
Don’t Care
Transitioning Data
25
WRITES
WRITE bursts are initiated with a WRITE command, as shown in Figure 16.
The starting column and bank addresses are provided with the WRITE command, and auto precharge is either enabled or disabled
for that access. If auto precharge is enabled, the row being accessed is precharged at the completion of the burst. For the generic
WRITE commands used in the following illustrations, auto precharge is disabled.
During WRITE bursts, the first valid data-in element will be registered coincident with the WRITE command. Subsequent data
elements will be registered on each successive positive clock edge. Upon completion of a fixed-length burst, assuming no other
commands have been initiated, the DQs remains High-Z and any additional input data will be ignored (see Figure 17 on page 26). A
full-page burst will continue until terminated (at the end of the page, it will wrap to the start address and continue). Data for any
WRITE burst may be truncated with a subsequent WRITE command, and data for a fixed-length WRITE burst may be immediately
followed by data for a WRITE command. The new WRITE command can be issued on any clock following the previous WRITE
command, and the data provided coincident with the new command applies to the new command. An example is shown in Figure 18.
Data n + 1 is either the last of a burst of two or the last desired of a longer burst. The 512Mb SDRAM uses a pipelined architecture
and, therefore, does not require the 2n rule associated with a prefetch architecture. A WRITE command can be initiated on any clock
cycle following a previous WRITE command. Full-speed random write accesses within a page can be performed to the same bank,
as shown in Figure 19, or each subsequent WRITE may be performed to a different bank.
Figure 16: Write Command
Don’t Care
Column Address
Bank Address
T0
Enable Auto Precharge
Disable Auto Precharge
CLK
CKE
CS#
RAS#
CAS#
WE#
A[0-9], A11
A10
BA(0,1)
A12
26
Figure 8: READ Command
Column Address
Bank Address
Enable Auto Precharge
Disable Auto Precharge
CLK
CKE
CS#
RAS#
CAS#
WE#
A0-A9, A11
A12
A10
BA(0,1)
Don’t Care
27
Figure 19: Random WRITE Cycles
WRITE WRITE WRITE WRITE
Bank Col. n Bank Col. a Bank Col. x Bank Col. m
Din n Din a Din x Din m
Notes:
1.
DQM is LOW. Each WRITE command may be to any bank.
CLK
Command
A
DQ
T0 T1 T2 T3
Transitioning Data
Figure 20: WRIT E-to-READ
WRITE NOP READ NOP NOP NOP
Bank Col. n Bank Col. b
Din n Din n+1 Dout b Dout b+1
tCK
Notes:
T0 T1 T2 T3 T4 T5 T6
CLK
Command
Address
DQ
The WRITE or RE A D command may be to any bank. D Q M is LO W
Don’t Care
Transitioning Data
28
Data for a fixed-length WRITE burst may be followed by, or truncated with, a PRECHARGE command to the same bank (provided
that auto precharge was not activated), and a full-page WRITE burst may be truncated with a PRECHARGE command to the same
bank. The PRECHARGE command should be issued tWR after the clock edge at which the last desired input data element is
registered. The auto precharge mode requires a tWR of at least one clock plus time, regardless of frequency. In addition, when
truncating a WRITE burst, the DQM signal must be used to mask input data for the clock edge prior to, and the clock edge
coincident with, the PRECHARGE command. An example is shown in Figure 21. Data n + 1 is either the last of a burst of two or
the last desired of a longer burst. Following the PRECHARGE command, a subsequent command to the same bank cannot be issued
until tRP is met. The precharge can be issued coincident with the first coincident second clock (Figure 21). In the case of a fixed-
length burst being executed to completion, a PRECHARGE command issued at the optimum time (as described above) provides the
same operation that would result from the same fixed-length burst with auto precharge. The disadvantage of the PRECHARGE
command is that it requires that the command and address buses be available at the appropriate time to issue the command; the
advantage of the PRECHARGE command is that it can be used to truncate fixed-length or full-page bursts. Fixed-length or full-
page WRITE bursts can be truncated with the BURST TERMINATE command. When truncating a WRITE burst, the input data
applied coincident with the BURST TERMINATE command will be ignored. The last data written (provided that DQM is LOW at
that time) will be the input data applied one clock previous to the BURST TERMINATE command. This is shown in Figure 22,
where data n is the last desired data element of a longer burst.
Figure 21: WRITE-to-PRECHARGE
WRITE NOP PRECHARGE NOP NOP ACTIVE NOP
Bank a, Col n Bank (a or all) Bank a, ROW
Din n Din n+1
WRITE NOP NOP PRECHARGE NOP NOP ACTIVE
Bank a, Col n Bank (a or all) Bank a, ROW
Din n Din n+1
tRPtWR tRPtWR
Notes:
1. DQM could rema in low in this example if the write burst is a fixed length o f tw o.
tWR = tCLK > = 15 ns
tWR = tCLK < 15 ns
T0 T1 T2 T3 T4 T5 T6
CLK
DQM
COMMAND
ADDRESS
DQ
DQM
COMMAND
ADDRESS
DQ
Don’t Care
Transitioning Data
tWR tRP
29
Figure 22: Terminating a WRITE Burst
WRITE BURST TERMINATE Next Command
Bank Col. n Address
Din n (Data)
CLK
Command
A
DQ
T0 T1 T2
Don’t Care
Transitioning Data
Note: DQMs are LOW.
30
Precharge
The PRECHARGE command shown in Figure 23 is used to deactivate the open row in a particular bank or the open row in all
banks. The bank(s) will be available for a subsequent row access at the specified time (tRP) after the PRECHARGE command is
issued. Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank is to be
precharged, inputs BA0, BA1 select the bank. When all banks are to be precharged, inputs BA0, BA1 are treated as “Don’t Care.”
After a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued
to that bank.
Figure 23: PRECHARGE Command
Bank Address
All Banks
Bank Selected
CLK
CKE
CS#
RAS#
CAS#
WE#
A(0-9,11,12)
A10
BA(0,1)
Don’t Care
31
Power-Down
Power-down occurs if CKE is registered LOW coincident with a NOP or COMMAND INHIBIT when no accesses are in progress.
If power-down occurs when all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when
there is a row active in any bank, this mode is referred to as active power-down. Entering power-down deactivates the input and
output buffers, excluding CKE, for maximumpower savings while in standby. The device may not remain in the power-down state
longer than the refresh period (32ms) since no refresh operations are performed in this mode.
The power-down state is exited by registering a NOP or COMMAND INHIBIT and CKE HIGH at the desired clock edge (meeting
tCKS). See Figure 24.
Clock Suspend
The clock suspend mode occurs when a column access/burst is in progress and CKE is registered LOW. In the clock suspend mode,
the internal clock is deactivated, “freezing” the synchronous logic.
For each positive clock edge on which CKE is sampled LOW, the next internal positive clock edge is suspended. Any command or
data present on the input pins at the time of a suspended internal clock edge is ignored; any data present on the DQ pins remains
driven. Burst counters are not incremented, as long as the clock is suspended (see examples in Figures 25 and 26).
Clock suspend mode is exited by registering CKE HIGH; the internal clock and related operation resumes on the subsequent
positive clock edge. The device may not remain in clock suspend state longer than the refresh period (32ms) since no refresh
operations are performed in this mode.
Figure 24: POWER-DOWN
NOP NOP ACTIVE
Input Buffers Gated Off
tCKS
All Banks Idle
Enter Power-Down Mode Exit Power-Down Mode
CLK
CKE
Command
Don’t Care
tCKS
tRCD
tRAS
tRC
32
Figure 25: CLOCK SUSPEND During WRITE Burst
WRITENOP NOP NOP
Bank Col. n Bank Col. b
Din n Din n+1 Dout b Dout b+1
T0 T1 T2 T3 T4 T5
CLK
CKE
INTERNAL
COMMAND
ADDRESS
DQ
Don’t Care
Transitioning Data
Note:
1. BL = 4 or greater. DM is LOW.
CLOCK
Figure 26: CLOCK SU SP EN D During READ Burst
READ NOP NOP NOP NOP NOP
Bank Col. n
Dout n Dout n+1 Dout n+2 Dout n+3
Notes:
1. For this example CL = 2, BL = 4 or greater, and DQM is LOW.
T0 T1 T2 T3 T4 T5 T6
CLK
SYSCLK
CKE
COMMAND
ADDRESS
DQ
Don’t Care
Transitioning Data
33
Burst READ/Single WRITE
The burst read/single write mode is entered by programming the write burst mode bit (M9) in the mode register to a logic 1. In this
mode, all WRITE commands result in the access of a single column location (burst of one), regardless of the programmed burst
length. READ commands access columns according to the programmed burst length and sequence, just as in the normal mode of opera-
tion (M9 = 0).
Concurrent Auto Precharge
An access command to (READ or WRITE) another bank, while an access command with auto precharge enabled is executing is not
allowed by SDRAMs, unless the SDRAM supports concurrent auto precharge. SDRAMs support concurrent auto
precharge. Four cases where concurrent auto precharge occurs are defined below.
READ with Auto Precharge
Interrupted by a READ (with or without auto precharge): A READ to bank m interrupts a READ on bank n, CL later. The
PRECHARGE to bank n begins when the READ to bank m is registered (see Figure 28).
Interrupted by a WRITE (with or without auto precharge): A WRITE to bank m interrupts a READ on bank n when registered. DQM
should be used two clocks prior to the WRITE command to prevent bus contention. The PRECHARGE to bank n will
begins when the WRITE to bank m is registered (see Figure 29).
Figure 27: READ with Auto Precharge Interrupted by a READ
NOP READ AP NOP NOP NOP NOP NOP
Page Active Read with burst of 4 Interrupt Burst, Precharge Idle
Page Active Read with burst of 4 Precharge
BANK n
Dout a Dout a +1 Dout d Dout d+1
CL = 3 (Bank m)
CL = 3 (Bank n)
tRP BANK n
Notes:
1. DQM is LOW.
T0 T1 T2 T3 T4 T5 T6 T7
CLK
COMMAND
BANKn
BANKm
ADDRESS
DQ(CL=3)
Don’t Care
Transitioning Data
Internal States
BANK n
COL a
READ AP
BANK m
BANK m
COL d
tRP BANK m
34
Figure 17: WRITE Burst
WRITE NOP NOP NOP
BANK COL n
Din n Din n+1
T3T2T1T0
Notes:
1.
BL = 2. DQM is Low.
CLK
Command
A
DQ
Don’t Care
Transitioning Data
Figure 18: WRITE-TO-WRITE
WRITE NOP WRITE
BANK COL n BANK COL b
Din n Din n+1 Din b
Notes:
1.
DQM is LOW. Each WRITE command may bo to any bank.
CLK
Command
Address
DQ
Don’t Care
Transitioning Data
T2
T1
T0
35
Figure 28: READ with Auto Precharge Interrupted by a WRITE
READ AP NOP NOP NOP NOP NOP NOP
Page Read with burst of 4 Interrupt Burst, Precharge Idle
Page Active Write with burst of 4 Write Back
BANK n
Dout a Din d Din d+1 Din d+2 Din d+3
CL = 3 (bank n)
tRP BANK n
Notes:
1. DQM is High at T2 to prevent Dout a+1 from contending with Din d at T4.
Internal States
T0 T1 T2 T3 T4 T5 T6 T7 T8
CLK
CCOMMAND
BANKn
BANKm
ADDRESS
DQM
DQ(CL=3)
Active
BANK n READ AP
BANK m
Don’t Care
Transitioning Data
tWR BANK m
COL a BANK m
COL d
36
Data for any WRITE burst may be truncated with a subsequent READ comment, and data for a fixed-length WRITE burst may be
immediately followed by a READ command. After the READ command is registered, the data inputs will be ignored, and WRITEs
will not be executed. An example is shown. Data n+1 is either the last of a burst of two or the latest desired of a longer burst.
WRITE with Auto Precharge
Interrupted by a READ (with or without auto precharge): A READ to bank m interrupts a WRITE on bank n when registered,
with the data-out appearing CL later. The PRECHARGE to bank n begins after tWR is met, where tWR begins when the
READ to bank m is registered. The last valid WRITE to bank n will be data-in registered one clock prior to the READ to
bank m (see Figure 29).
Interrupted by a WRITE (with or without auto precharge): A WRITE to bank m interrupts a WRITE on bank n when registered.
The PRECHARGE to bank n begins after tWR is met, where tWR begins when the WRITE to bank m is registered. The last
valid data WRITE to bank n will be data registered one clock prior to a WRITE to bank m (see Figure 30).
Figure 29: WRITE with Auto Precharge Interrupted by a READ
NOP WRITE AP NOP NOP NOP NOP NOP
Page Active Read with burst of 4 Interrupt Burst, write-back Precharge
Page Active Read with burst of 4
bank n col a bank m cl d
Din a a+1 Dout d d+1
tWR BANK n
Notes:
1. DQM is Low.
T0 T1 T2 T3 T4 T5 T6 T7
CLK
COMMAND
BANKn
BANKm
ADDRESS
DQ(CL=3)
BANK n READ AP
BANK m
Internal States tRP BANK n tWR BANK m
Don’t Care
Transitioning Data
37
Figure 30: WRITE with Auto Precharge Interrupted by a WRITE
NOP WRITE AP NOP NOP NOP NOP NOP
Page Active Write with burst of 4 Interrupt Burst, write-back Precharge
Page Active Write with burst of 4 Write-Back
BANK n
Din a a+1 a+2 Din d d+1 d+2 d+3
tWR BANK n
Notes:
1. DQM is Low.
T0 T1 T2 T3 T4 T5 T6 T7
CLK
COMMAND
BANKn
BANKm
ADDRESS
DQ(CL=3)
BANK n WRITE AP
BANK m
tRP BANK n
tWR BANK m
COL a BANK m
COL d
Internal States
Don’t Care
Transitioning Data
38
Notes:
1. CKEn is the logic state of CKE at clock edge n; CKEn - 1 was the state of CKE at the previous clock edge.
2. Current state is the state of the SDRAM immediately prior to clock edge n.
3. COMMANDn is the command registered at clock edge n, and ACTIONn is a result of COMMANDn.
4. All states and sequences not shown are illegal or reserved.
5. Exiting power-down at clock edge n will put the device in the all banks idle state in time for clock edge n + 1 (provided that tCKS is met).
6. After exiting clock suspend at clock edge n, the device resumes operation and recognize the next command at clock edge n + 1.
Table 6: Truth Table 2 - CKE
Notes 1-4 apply to entire table; Notes appear below.
CKEn-1 CKEnCurrent State COMMANDnACTIONnNotes
L L Power-down XMaintain power-down
Clock suspend XMaintain clock suspend
L H Power-down COMMAND INHIBIT or NOP Exit power-down 5
Clock suspend XExit clock suspend 6
H L All banks idle COMMAND INHIBIT or NOP Power-down entry
All banks idle AUTO REFRESH
Reading or writing VALID Clock suspend entry
H H See Table 7
Table 7: Truth Table 3 - Current State Bank n, Command to Bank n
Current
State CS# RAS# CAS# WE# Command (Action) Notes
Any H X X X COMMAND INHIBIT (NOP/continue previous operation)
L H H H NO OPERATION (NOP/continue previous operation)
Idle L L H H ACTIVE (Select and activiate row)
L L L H AUTO REFRESH 7
LLLLLOAD MODE REGISTER 7
L L H L PRECHARGE 11
Row
active
L H L H READ (Select column and start READ burst) 10
L H L L WRITE (Select column and start WRITE burst) 10
L L H L PRECHARGE (Deactivate row in bank or banks) 8
Read
(auto
precharge
disabled)
L H L H READ (Select column and start new READ burst) 10
L H L L WRITE (Select column and start WRITE burst) 10
L L H L PRECHARGE (Truncate READ burst, start PRECHARGE) 8
L H H L BURST TERMINATE 9
39
Notes:
1. This table applies when CKEn - 1 was HIGH and CKEn is HIGH (see Table 7) and after tXSR has been met.
2. This table is bank-specific (except where noted) the current state is for a specific bank and the commands shown are those allowed to be issued to that bank when
in that state. Exceptions are covered in the notes below.
3. Current state definitions:
Idle: The bank has been precharged, and tRP has been met.
Row active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register accesses are in progress.
Read: A READ burst has been initiated, with auto precharge disabled and has not yet terminated or been terminated.
Write: A WRITE burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated.
4. The following states must not be interrupted by a command issued to the same bank. COMMAND INHIBIT or NOP commands or allowable commands to the
other bank should be issued on any clock edge occurring during these states. Allowable commands to the other bank are determined by its current state and Table
7 and according to Table 8.
Precharging: Starts with registration of a PRECHARGE command and ends when tRP is met. After tRP is met, the bank will be in the idle state.
Row activating: Starts with registration of an ACTIVE command and ends when tRCD is met. After tRCD is met, the bank will be in the row active state.
Read with auto Starts with registration of a READ command with auto precharge enabled and ends when tRP has been met. After tRP is met, the bank
precharge enabled: will be in the idle state.
Write w/auto: Starts with registration of a WRITE command with auto precharge enabled and ends when tRP has been met. After tRP is met, the bank
precharge enabled: will be in the idle state.
5. The following states must not be interrupted by any executable command; COMMAND INHIBIT or NOP commands must be applied on each positive clock edge
during these states.
Refreshing: Starts with registration of an AUTO REFRESH command and ends when tRC is met. After tRC is met, the SDRAM will be in the al
banks idle state.
Accessing mode Starts with registration of a LOAD MODE REGISTER command and ends when tMRD has been met. After tMRD is met, the SDRAM
register: will be in the all banks idle state.
Precharging all: Starts with registration of a PRECHARGE ALL command and ends when tRP is met. After tRP is met, all banks will be in the idle state.
6. All states and sequences not shown are illegal or reserved.
7. Not bank-specific; requires that all banks are idle.
8. May or may not be bank-specific; if all banks are to be precharged, all must be in a valid state for precharging.
9. Not bank-specific; BURST TERMINATE affects the most recent READ or WRITE burst, regardless of bank.
10. READs or WRITEs listed in the Command (Action) column include READs or WRITEs with auto precharge enabled and READs or WRITEs with auto
precharge disabled.
11. Does not affect the state of the bank and acts as a NOP to that bank.
Write
(auto
precharge
disabled)
L H L H READ (Select column and start READ burst) 10
L H L L WRITE (Select column and start new WRITE burst) 10
L L H L PRECHARGE (Truncate WRITE burst, start PRECHARGE) 8
L H H L BURST TERMINATE 9
Table 7: Truth Table 3 - Current State Bank n, Command to Bank n
40
Notes:
1. This table applies when CKEn - 1 was HIGH and CKEn is HIGH (see Table 6) and after tXSR has been met.
2. This table describes alternate bank operation, except where noted; that is, the current state is for bank n and the commands shown are those allowed to be issued to
bank m (assuming that bank m is in such a state that the given command is allowable). Exceptions are covered in the notes below.
3. Current state definitions:
Idle: The bank has been precharged, and tRP has been met.
active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register accesses are in progress.
Read: A READ burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated.
Write: A WRITE burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminate
Read with auto Starts with registration of a READ command with auto precharge enabled, and ends when tRP has been met. After tRP is met, the precharge
enabled: bank will be in the idle state.
Write with autoStarts with registration of a WRITE command with auto precharge enabled, and ends when tRP has been met. After tRP is met, the
precharge enabled: bank will be in the idle state.
Table 8: Truth Table 4 - Current State Bank n, Command to Bank m
Current
State CS# RAS# CAS# WE# Command (Action) Notes
Any H X X X COMMAND INHIBIT (NOP/continue previous operation)
L H H H NO OPERATION (NOP/continue previous operation)
Idle X X X X Any Command Otherwise Allowed to Bank m
Row
activating,
active, or
precharging
L L H H ACTIVE (Select and activate row)
L H L H READ (Select column and start READ burst) 7
L H L L WRITE (Select column and start WRITE burst) 7
L L H L PRECHARGE
Read (auto
precharge
disabled)
L L H H ACTIVE (Select and activate row)
L H L H READ (Select column and start new READ burst) 7, 10
L H L L WRITE (Select column and start WRITE burst) 7, 11
L L H L PRECHARGE 9
Write (auto
precharge
disabled)
L L H H ACTIVE (Select and activate row)
L H L H READ (Select column and start READ burst) 7, 12
L H L L WRITE (Select column and start new WRITE burst) 7, 13
L L H L PRECHARGE 9
Read (with
auto
precharge)
L L H H ACTIVE (Select and activate row)
L H L H READ (Select column and start new READ burst) 7, 8, 14
L H L L WRITE (Select column and start WRITE burst) 7, 8, 15
L L H L PRECHARGE 9
Write (with
auto
precharge)
L L H H ACTIVE (Select and activate row)
L H L H READ (Select column and start READ burst) 7, 8, 16
L H L L WRITE (Select column and start new WRITE burst) 7, 8, 17
L L H L PRECHARGE 9
41
4. AUTO REFRESH and LOAD MODE REGISTER commands may only be issued when all banks are idle.
5. A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by the current state only.
6. All states and sequences not shown are illegal or reserved.
7. READs or WRITEs to bank m listed in the Command (Action) column include READs or WRITEs with auto precharge enabled and READs or WRITEs with auto
precharge disabled.
8. Concurrent auto precharge: Bank n initiates the auto precharge command when its burst has been interrupted by bank m’s burst.
9. Burst in bank n continues as initiated.
10. For a READ without auto precharge interrupted by a READ (with or without auto precharge), the READ to bank m interrupts the READ on bank n, CL later
(Figure 10).
11. For a READ without auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank m interrupts the READ on bank n when
registered (Figure 12 and Figure 13). DQM should be used one clock prior to the WRITE command to prevent bus contention.
12. For a WRITE without auto precharge interrupted by a READ (with or without auto precharge), the READ to bank minterrupst the WRITE on bank n when
registered (Figure 20), with the data-out appearing CL later. The last valid WRITE to bank n will be data-in registered one clock prior to the READ to bank m.
13. For a WRITE without auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank m interrupts the WRITE on bank n when
registered (Figure 18). The last valid WRITE to bank n will be data-in registered one clock prior to the READ to bank m.
14. For a READ with auto precharge interrupted by a READ (with or without auto precharge), the READ to bank minterrupts the READ on bank n, CL later. The
PRECHARGE to bank n will begin when the READ to bank m is registered (Figure 27).
15. For a READ with auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank m interrupts the READ on bank n when
registered. DQM should be used two clocks prior to the WRITE command to prevent bus contention. The PRECHARGE to bank n will begin when the WRITE
to bank m is registered (Figure 28).
16. For a WRITE with auto precharge interrupted by a READ (with or without auto precharge), the READ to bank minterrupts the WRITE on bank n when
registered, with the data-out appearing CL later. The PRECHARGE to bank n will begin after tWR is met, where tWR begins when the READ to bank m is
registered. The last valid WRITE to bank n will be datain registered one clock prior to the READ to bank m (Figure 29).
17. For a WRITE with auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank minterrups the WRITE on bank n when
registered. The PRECHARGE to bank n begins after tWR is met, where tWR begins when the WRITE to bank m is registered. The last valid WRITE to bank n
will be data registered one clock prior to the WRITE to bank m (Figure30).
42
Electrical Specifications
ABSOLUTE MAXIMUM RATINGS
(Referenced to VSS)
Notes:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability and performance.
RECOMMENDED OPERATING CONDITIONS
(Referenced to VSS)
OPERATIONAL ENVIRONMENT SPECIFICATIONS
Notes:
1. Irradiated per MIL-STD-883 Method 1019 Condition A, and is guaranteed to a maximum total dose specified.
2. The UT8SDMQ64M40/48 will not latch up during radiation exposure under recommended operating conditions.
3. 90% worst case particle environments, geosynchronous orbit, 100 Mils of aluminum.
SYMBOL PARAMETER LIMITS
VDD and VDDQ DC supply voltage -1.0 to +4.3V
VIN, VOUT Voltage on any pin relative to VSS -0.3 to VDD +0.3V
TSTG Storage temperature -65 to +150C
PDMaximum power dissipation 4W
TJMaximum junction temperature +125oC
JC Thermal resistance, junction-to-case 5oC/W
SYMBOL PARAMETER LIMITS
VDD and VDDQ Positive supply voltage 3.0 to 3.6V
TCCase temperature range -40 to 105oC
VIN DC input voltage 0V to VDDQ
PARAMETERS LIMIT UNITS
Total Ionizing Dose (TID)1100 krad(Si)
Single Event Latchup (SEL)2111 MeV-cm2/mg
Single Event Upset31.1E-10 Events/Bit-Day
43
DC Electrical Characteristics and Operating Conditions (Pre/Post-Radiation)*
Notes 1, 4, and 5 apply to entire table. (VDD, VDDQ = +3.3V +/-0.3V; Unless otherwise noted, Tc is per temperature range ordered.)
Parameter/Condition Symbol Min Max Units Notes
Input high voltage: Logic 1; All inputs VIH 2.2 V
Input low voltage: Logic 0; All inputs VIL 0.6 V
Input leakage current: Any input 0V< VIN < VDD
(All other pins not under test = 0V)
II-5 5μA
Output leakage current: DQs are disabled;
0V < VOUT < VDDQ
IOZ -5 5μA
Output levels:
Output high voltage (IOUT = -4mA)
VOH 2.4 -- V
Output low voltage (IOUT = 4mA) VOL -- 0.4 V
IDD Specifi cations and Cond itions (Pre/Post-Radiation)*
Notes 1, 4, 5, 9, and 11 apply to entire table. (VDD, VDDQ = +3.6V; Unless otherwise noted, Tc is per temperature range ordered.)
Parameter/Condition Symbol Max Units Notes
x40 x48
Operating current: active mode; CK = 100MHz
Burst = 2; READ or WRITE; tRC = tRC (MIN)
IDD1375 450 mA 3, 12, 13,
15
Standby current: power-down mode; CK = 100 MHz
CKE = LOW; All banks idle
IDD212.5 15 mA 15
Standby current: active mode; CS# = HIGH CKE = HIGH; All banks
active after tRCD met; No accesses in progress; CK = 100 MHz
IDD3138 165 mA 3, 10,13,
15
Operating current: Burst mode; Page burst;
READ or WRITE; All banks active
IDD4375 450 mA 3, 12, 13,
15
Auto refresh current:
CS# = HIGH; CKE = HIGH
tRFC = tRFC (MIN) IDD5960 1150 mA 3, 12, 13,
15, 16
tRFC =3.9 s IDD6125 150 mA
Capacitance
Notes 2 apply to entire table
Parameter Condition Symbol Max Units
x40 x48
Input capacitance: All other input-only pins f=1MHz @ 0V CIN CIN 65 75 pF
Input/output capacitance: DQs f=1MHz @ 0V CIO CIO 25 25 pF
44
AC CHARACTERISTICS and RECOMMENDED OP ERATING CONDITIONS (Pre/Post-Radiation)*
Notes 4, 5, 6, 7, 8 and 9 apply to entire table. (VDD, VDDQ = +3.3V +/-0.3V; Unless otherwise noted, Tc is per temperature range ordered.)
SYMBOL PARAMETER MIN MAX UNIT NOTES
tAC(3) Access time from CLK (positive edge) CL=3 7.5 ns
tAC(2) Access time from CLK (positive edge) CL=2 7.5 ns
tAH Address hold time 1.5 ns
tAS Address setup time 1.5 ns
tCH CLK high-level width 4 ns
tCL CLK low-level width 4 ns
tCK3 Clock cycle time CL=3 10 ns
tCK2 Clock cycle time CL = 2 10 ns 14
tCKH CKE hold time 2 ns
tCKS CKE setup time 1.5 ns
tCMH CS# hold time 2.0 ns
RS#, CAS#, WE# hold time 1.5 ns
DQM hold time 2.5 ns
tCMS CS# setup time 2.5 ns
RS#, CAS#, WE# setup time 1.5 ns
DQM setup time 1.5 ns
tDH Data-in hold time 2.5 ns
tDS Data-in setup time 1.5 ns
tHZ3 Data-out High-Z time CL = 3 9 ns
tHZ2 Data-out High-Z time CL = 2 9 ns
tLZ Data-out Low-Z time 1 ns
tOH Data-out Hold time (load) 2.7 ns
tOHN Data-out hold time (no load) 1.8 ns 17
tRAS ACTIVE-to-PRECHARGE command 44 60,000 ns 17
tRC ACTIVE-to-ACTIVE command period 66 ns
tRCD ACTIVE-to-READ or WRITE delay 20 ns
tREF Refresh period (8,192 rows) 32 ms 18
tRFC AUTO REFRESH period 66 ns
tRP PRECHARGE command period 20 ns
tRRD ACTIVE bank a-to-ACTIVE bank b command 15 ns
tTTransition time 0.3 1.2 ns 6
tWR WRITE recovery time 20 ns
45
AC Functional Characteristics (Pre/Post-Radiation)*
AC Functional Characteristics (Pre/Post-Radiation)*
Notes 4, 5, 6, 7, 9, and 19 apply to entire table. (VDD, VDDQ = +3.3V +/-0.3V; Unless otherwise noted, Tc is per temperature range ordered.)
PARAMETER Symbol x40 x48 Units Notes
READ/WRITE command-to-READ/WRITE command tCCD 1 1 tCK
CKE to clock disable or power-down entry mode tCKED 1 1 tCK
CKE to clock enable or power-down exit setup mode tPED 1 1 tCK
DQM input data delay tDQD 0 0 tCK
DQM to data mask during WRITEs tDQM 0 0 tCK
DQM to data High-Z during READs tDQZ 2 2 tCK
WRITE command to input data delay tDWD 0 0 tCK
Data-in to ACTIVE command tDAL 5 5 tCK
Data-in to PRECHARGE command tDPL 2 2 tCK
Last data-in to burst STOP command tBDL 1 1 tCK
Last data-in to new READ/WRITE command tCDL 1 1 tCK
Last data-in to PRECHARGE command tRDL 2 2 tCK
LOAD MODE REGISTER command to ACTIVE or REFRESH
command
tMRD 2 2 tCK
Dataout to High-Z form PRECHARGE command tROH(3) 3 3 tCK
tROH(2) 2 2 tCK
46
Notes:
* For devices procured with a total ionizing dose tolerance guarantee, the post-irradiation performance is guaranteed at 25oC per MIL-STD-883 Method 1019,
Condition A up to the maximum TID level procured.
1. All voltages referenced to VSS.
2. Measured only for initial qualification and after process or design change that could affect this parameter.
3. IDD is dependent on output loading and cycle rates. Specified values are obtained with minimum cycle time and the outputs open.
4. The minimum specifications are used only to indicate cycle time at which proper operation over the full temperature range
(–40°C ≤ TC ≤ 105°C) is ensured.
5. An initial pause of 100μs is required after power-up, followed by two AUTO REFRESH commands, before proper device operation is ensured. (VDD and VDDQ
must be powered up simultaneously. VSS and VSSQ must be at same potential.) The two AUTO REFRESH command wake-ups should be repeated any time the
tREF refresh requirement is exceeded.
6. AC characteristics assume tT = 1ns, supplied as a design limit, neither tested nor guaranteed.
7. In addition to meeting the transition rate specification, the clock and CKE must transit between VIH and VIL (or between VIL and VIH) in a monotonic manner.
8. Outputs measured at 1.5V with equivalent load:
9. AC timing and IDD tests are set with timing referenced to a 1.5 crossover point.
10. Other input signals are allowed to transition no more than once every two clocks and are otherwise at valid VIH or VIL levels.
11. IDD specifications are tested after the device is properly initialized.
12. The IDD current will increase or decrease in a proportional amount by the amount the frequency is altered for the test condition.
13. Address transitions average one transition every two clocks.
14. The clock frequency must remain constant (stable clock is defined as a signal cycling within timing constraints specified for the clock pin) during access or
precharge states (READ, WRITE, including tWR, and PRECHARGE commands). CKE may be used to reduce the data rate.
15. CL = 2, tCK = 10ns.
16. CKE is HIGH during refresh command period tRFC (MIN) else CKE is LOW. The IDD6 limit is actually a nominal value and does not result in a fail value.
17. Guaranteed by design.
18. Guaranteed by characterization.
19. Functionally tested only.
VDD
DUT Zo = 50-ohms
VDD
CL = 40pF
RTERM
100-ohms
Test
Point
RTERM
100-ohms
Equivalent Test Load Circuit
47
TIMING DIAGRAMS
Figure 31: Initialize and Load Mode Register
NOP PRE NOP LOAD NOP ACTIVE
CODE ROW
CODE ROW
ALL BANKS
BANK
tAH
tAS
tAH
tAS
tCMH
tCMS
tCKH
tCKS
tMRDtRFC
tRFC
tCL
tCH
tRP
tCK
Notes:
1. The Mode Register may be loaded prior to the AUTO REFRESH cycles if desired.
2. If CS is HIGH at clock HIGH time, all commands applied are NOP.
3. JEDEC and PC100 specify three clocks.
4. Outputs are guaranteed High-Z after command is issued.
5. A12 should be a LOW at Tp+1.
ALL BANKS
SINGLE BANK
High-Z
T0 T1 Tn + 1
CLK
CKE
COMMAND
DQM
A(0:9,11:12)
A(10)
BA(0,1)
DQ
To +1 Tp + 1 Tp + 2 Tp + 3
Don’t Care
CHARGE
MODE
REGISTER
NOP
NOP NOP AUTO
REFRESH
AUTO
REFRESH
Power-up:
Vdd and
CLK stable
Precharge
all banks AUTO REFRESH AUTO REFRESH Program mode regi ster 2, 3, 4
48
Figure 32: Power-Down Mode
PRE NOP NOP NOP ACTIVE
ROW
ROW
BANK(s) BANK
All banks idle
Input buffers gated off while in power-down modeTwo clock cycles
tAH
tAS
tCMH
tCMS
tCKS
tCKS
tCKH
tCKS
Note: Violating refresh requirements during power down may result in a loss of data.
ALL BANKS
SINGLE BANK
High-Z
Precharge all
active banks All banks idle, enter
power-down mode
T0 T1 T2 Tn + 1 Tn + 2
CLK
CKE
COMMAND
DQM
A(0:9,11:12)
A(10)
BA(0,1)
DQ
Don’t Care
Exit power-down mode
CHARGE
tCK tCH tCL
49
Figure 33: Clock Suspend Mode
READ NOP NOP NOP NOP NOP WRITE NOP
COLUMN
BANK Bank
Dout m Dout m+1 Din e Din + 1
tDH
tHZ
tAC
tOH
tAC
tLZ tDS
tAH
tAS
tAH
tAS
tAH
tAS
tCMH
tCMS
tCMH
tCMS
tCKH
tCKS
tCL
tCH
tCK
Notes:
1. For this example, BL=2, CL=3 and auto precharge is disabled.
2.
A12 = "Dont Care."
High-Z
T0
T1 T2 T3 T4 T5 T6 T7 T8 T9
CLK
CKE
COMMAND
DQM
A(0:9,11:12)
A(10)
BA(0,1)
DQ
Don’t Care
Undefined
m2 column
e2
50
Figure 34: Auto-Refresh Mode
NOP
AUTO
NOP
Row
BANK(s) BANK
tAH
tAS
tCMH
tCMS
tCKH
tCKS
tRFC
tCL
tCH
tRP
tCK
ALL BANKS
SINGLE BANK
High-Z
T0 T1 T2
CLK
CKE
COMMAND
DQM
A(0:9,11:12)
A(10)
BA(0,1)
DQ
Don’t Care
NOP
PRE
REFRESH
NOPNOP
ACTIVE
ROW
ROW
tRFC
AUTO
REFRESH
CHARGE
Tn+1 Tn+1
Precharge all
active banks
51
Figure 35: READ - Without Auto Precharge
ACTIVE NOP NOP READ NOP NOP NOP NOP
ROW column ROW
ROW ROW
BANK BANK
Dout m m+1 m+2 m+3
tHZ
tAC
tOH
tAC
tOH
tAC
tLZ
CAS Latency
tAH
tAS
tAH
tAS
tAH
tAS
tCMH
tCMS
tCMH
tCMS
tCKH
tCKS
tRC
tRAS
tCL
tCH
tRCD
tCK
High-Z
ALL BANKS
SINGLE BANK
DISABLE AUTO PRECHARGE
CLK
CKE
COMMAND
DQM
A(0:9,11:12)
A(10)
BA(0,1)
DQ
T0 T1 T2 T3 T4 T5 T6 T7 T8
Notes:
2. A12 = “Don’t Care”
Don’t Care
Undefined
PRE
CHARGE ACTIVE
tAC
tOH tOH
BANK BANK
tRP
m2
1. For this example BL = 4, CL = 2, and the read burst is followed by a “manual” PRECHARGE
52
Figure 36: READ - With Auto Precharge
ACTIVE NOP NOP READ NOP NOP NOP NOP NOP ACTIVE
ROW
column
ROW
ROW ROW
BANK BANK
Dout m m+1 m+2 m+3
tHZ
tOHtAC
tLZ
tAH
tAS
tAH
tAS
tAH
tAS
tCMH
tCMS
tCMH
tCMS
tCKH
tCKS
tRC
tRP
tRAS
tCL
tCH
tRCD
tCK
Notes:
1. For this example BL=4, and CL = 2.
2. A12 = "Dont Care."
High-Z
ENABLE AUTO PRECHARGE
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10
CLK
CKE
COMMAND
DQM
A(0:9,11:12)
A(10)
BA(0,1)
DQ
Don’t Care
Undefined
tAC tAC
tOH tAC
tOH tOH
NOP
CAS Latency
BANK
m
2
53
ACTIVE
NOP NOP READ NOP NOP NOP
PRE
NOP
ROW column ROW
ROW ROW
BANK
Dout m
tHZ
tOH
tAC
tLZ
tAH
tAS
tAH
tAS
tAH
tAS
tCMH
tCMS
tCMH
tCMS
tCKH
tCKS
tRC
tRAS
tCL
tCH
tRCD
tCK
Notes:
1. For this example, BL = 1, CL = 2, and the READ burst is followed by a manual PRECHARGE.
2. A12 = "Dont Care."
High-Z
ALL BANKS
SINGLE BANK
DISABLE AUTO PRECHARGE
CLK
CKE
DQM
A(10)
BA(0,1)
DQ
Don’t Care
Transitioning Data
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
BANK
BANK(S)
BANK
ACTIVE
CHARGE
m
2
Figure 37: Single READ - Without Auto Precharge
54
ACTIVE
NOP NOP
3
READ NOP NOP NOP
ROW
column
ROW
ROW ROW
BANK BANK
Dout m
tHZ
tOH
tAC
tLZ
CAS Latency
tAH
tAS
tAH
tAS
tAH
tAS
tCMH
tCMS
tCKH
tCKS
tRP
tRC
tRAS
tRCD
tCL
tCH
tCK
Notes
:
1. For this example, BL=1, and CL = 2.
2.
3. A12 = "Dont Care."
High-Z
ENABLE AUTO PRECHARGE
CLK
CKE
DQM
A(10)
BA(0,1)
DQ
Don’t Care
Undefined
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
BANK
ACTIVE
NOP
3
READ command not allowed (would violate tRAS).
m
2
Figure 38: Single READ - With Auto Precharge
55
ACTIVE
NOP NOP READ NOP NOP NOP READ NOP
ACTIVE
ROW column ROW ROW
ROW ROW ROW
BANK BANK 0 BANK 3 BANK 3 BANK 0
Dout m m+1 m+2 m+3 Dout b
tAC
tOH
tAC
tLZ
CAS Latency - Bank 3
CAS Latency - Bank 0
tAH
tAS
tAH
tAS
tAH
tAS
tCMH
tCMS
tCMH
tCMS
tCKH
tCKS
tRC - Bank 0
tRCD - Bank 3
tRAS - Bank 0
tRRD
tRCD - Bank 0
tCK
Notes:
1. For this example, BL=4, CL = 2.
2.
A12 = "Dont Care."
High-Z
ENABLE AUTO PRECHARGE ENABLE AUTO PRECHARGE
CLK
CKE
COMMAND
DQM
A(0:9,11:12)
A(10)
BA(0,1)
DQ
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
tCLtCH
tAC
tOH tAC
tOH tAC
tOH tAC
tOH
m
3
column
b
3
tRP- Bank 0
Don’t Care
Undefined
Figure 39: Alternating Bank Read Accesses
56
ACTIVE
NOP NOP READ NOP NOP NOP NOP NOP
BURST
NOP NOP
ROW column
ROW
BANK BANK
Dout m m+1 m+2 m-1 Dout m m+1
tHZ
tAC
tOH
tAC
tLZ
CAS Latency
tAH
tAS
tAH
tAS
tAH
tAS
tCMH
tCMS
tCMH
tCMS
tCKH
tCKS
tCL
tCH
tRCD
tCK
Notes:
1. For this example, CL = 2.
2. A12 = "Dont Care"
3. Page left open; no tRP
1024 locations within same row
CLK
CKE
COMMAND
DQM
A(0:9,11:12)
A(10)
BA(0,1)
DQ
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
Don’t Care
Undefined
TERM
tOH
tAC tAC
tOH tAC
tOH tAC
tOH tOH
m
2
Figure 40: READ - Full-Page Burst
57
Figure 41: READ DQM Operation
ACTIVE NOP NOP READ NOP NOP NOP NOP NOP NOP
ROW column m
ROW
BANK
Dout m m+2 m+3
tHZ
tOH
tOH
tAC
tLZ
tOH
tAC
tLZ
tAH
tAS
tAH
tAS
tAH
tAS
tCMH
tCMS
tCMH
tCMS
tCKH
tCKS
tCL
tCH
tCK
Notes:
1. For this example, BL=4, and CL = 2
2.
A12 = "Dont Care"
High-Z
ENABLE AUTO PRECHA RGE
DISABLE AUTO PRECHARGE
CLK
CKE
COMMAND
DQM
A(0:9,11:12)
A(10)
BA(0,1)
DQ
T0 T1
T2
T3 T4 T5 T6 T7 T8 T9
Don’t Care
Undefined
BANK
CAS Latency
tRCD
tAC tAC
58
Figure 42: WRITE - Without Au to Precharge
ACTIVE NOP NOP WRITE NOP NOP NOP NOP NOP PRE NOP NOP
ROW column ROW
ROW ROW
BANK
Din m m+1 m+2 m+3 tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tAH
tAS
tAH
tAS
tAH
tAS
tCMH
tCMS
tCMH
tCMS
tCKH
tCKS
tRP
tRC
tWR3
tRAS
tCL
tCH
tRCD
tCK
Notes:
1. For this example, BL= 4, and the WRITE burst is followed by a manual PRECHARGE.
2. 14ns to 15 ns is required between
<Din m+3 > and the PRECHARGE command, regardless of frequency.
3.
A12 = "Dont Care."
ALL BANKS
SINGLE BANK
DISABLE AUTO PRECHARGE
CLK
CKE
COMMAND
DQM
A(0:9,11:12)
A(10)
BA(0,1)
DQ
Don’t Care
T0 T1
T2
T3 T4 T5 T6 T7 T8 T9
CHARGE ACTIVE
BANK
BANK BANK BANK
m3
59
Figure 43: WRITE - With Auto Precharge
ACTIVE
NOP NOP WRITE NOP NOP NOP NOP NOP NOP NOP
ROW column ROW
ROW ROW
BANK
Din m m+1 m+2 m+3 tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tAH
tAS
tAH
tAS
tAH
tAS
tCMH
tCMS
tCMH
tCMS
tCKH
tCKS
tRP
tRC
tWR
tRAS
tCL
tCH
tRCD
tCK
Notes:
1. For this example, BL= 4.
2.
A12 = "Dont Care."
ENABLE AUTO PRECHARGE
CLK
CKE
DQM
A(10)
BA(0,1)
DQ
Don’t Care
T0 T1
T2
T3 T4 T5 T6 T7 T8 T9
ACTIVE
BANK
BANK BANK
NOP
m2
60
Figure 44: Single WRITE - Without Auto Precharge
ACTIVE NOP NOP WRITE NOP NOP NOP NOP NOP PRE NOP NOP
ROW column ROW
ROW ROW
BANK
Din m m+1 m+2 m+3 tDH
tDS
tDH
tDS
tDH tDS
tDH
tDS
tAH
tAS
tAH
tAS
tAH
tAS
tCMH
tCMS
tCMH
tCMS
tCKH
tCKS
tRP
tRC
tWR
2
tRAS
tCL
tCH
tRCD
tCK
Notes:
1. For this example, BL= 1, and the WRITE burst is followed by a manual PRECHARGE.
2. 14ns to 15ns is required between
<Din m > and the PRECHARGE command, regardless of frequency.
3.
A12 = "Dont Care."
ALL BANKS
SINGLE BANK
DISABLE AUTO PRECHARGE
CLK
CKE
COMMAND
DQM
A(0:9,11:12)
A(10)
BA(0,1)
DQ
Don’t Care
T0 T1
T2
T3 T4 T5 T6 T7 T8 T9
CHARGE ACTIVE
BANK
BANK BANK BANK
4. PRECHARGE command not allowed else tRAS would be violated.
m3
61
Figure 45: Single WRITE - With Auto Precharge
ACTIVE NOP4WRITE NOP NOP NOP NOP
ROW ROW
ROW ROW
BANK BANK
Din m
CAS Latency
tDH
tDS
tAH
tAS
tCMH
tCMS
tCKH
tCKS
tRP
tRC
tWR2
tRAS
tRCD3
tCL
tCH
tCK
ENABLE AUTO PRECHARGE
Notes:
1.
For this example, BL = 1, and the WRITE burst is followed by a manual PRECHARGE.
2.
3.
A12 = "Dont Care."
4. PRECHARGE command not allowed (would violate tRAS).
14 to 15 ns is required between <Din m> and the PRECHARGE command, regardless of the frequency.
Don’t Care
CLK
CKE
COMMAND
DQM
A(0:9,11:12)
A(10)
BA(0,1)
DQ
column
T0 T1
T2
T3
T4 T5 T6 T7 T8 T9
tAH
tAS
tAH
tAS
BANK
m3
ACTIVE
NOP4NOP4
62
Figure 46: Alternating Bank WRITE Accesses
ACTIVE NOP NOP WRITE NOP NOP NOP ACTIVE
ROW column ROW ROW
ROW ROW ROW
BANK 0 BANK 0 BANK 1 BANK 1 BANK 0
CAS Latency - Bank 1
CAS Latency - Bank 0
tAH
tAS
tAH
tAS
tAH
tAS
tCMH
tCMS
tCMH
tCMS
tCKH
tCKS
tRC - Bank 0
tRCD - Bank 1
tRAS - Bank 0
tRRD
tRCD - Bank 0
tCK
ENABLE AUTO PRECHARGE ENABLE AUTO PRECHARGE
CLK
CKE
COMMAND
DQM
A(0:9,11:12)
A(10)
BA(0,1)
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
tCL
tCH
ACTIVE WRITE
m3column
b3
Din m
m+1 m+2 m+3 Din b b+1
b+2
tDH
tDS
DQ
Notes:
1. For this example, BL=4, CL=2.
2. Requires one c lock plus time (10ns) with auto precharge or 20ns with PRECHARGE.
3.
A12 = "Dont Care."
Don’t Care
tWR - Bank 0 tRP - Bank 0
63
Figure 47: WRITE Full-Page Burst
ACTIVE NOP NOP WRITE NOP NOP NOP NOP BURST NOP
ROW column
ROW
BANK BANK
Din m m+1 m+2 m+3 Din m-1
tDH
tDS
tAH
tAS
tAH
tAS
tAH
tAS
tCMH
tCMS
tCMH
tCMS
tCKH
tCKS
tCL
tCH
tRCD
tCK
Notes:
1.
A12 = "Dont Care."
2. tWR must be satisfied prior to PRECHARGE command.
3. Page left open; no tRP.
2048 locations within same row Full-Page Burst does
Can use BURST TERMINATE
CLK
CKE
COMMAND
DQM
A(0:9,11:12)
A(10)
BA(0,1)
DQ
T0 T1
T2
T3 T4 T5 T6 Tn+1 Tn+2 Tn+3
Don’t Care
TERMINATE
m1
not self-terminate.
command to stop.
Full page completed
64
Figure 48: WRITE - DQM Operation
ACTIVE NOP NOP WRITE NOP NOP NOP NOP NOP
ROW column
ROW
BANK BANK
Din m m+2 m+3
tDH
tDS
tAH
tAS
tAH
tAS
tAH
tAS
tCMH
tCMS
tCMH
tCMS
tCKH
tCKS
tCL
tCH
tRCD
tCK
Notes:
1. For this example, BL=4.
2.
A12 = "Dont Care."
ENABLE AUTO PR ECHARGE
DISABLE AUT O PRECHARG E
CLK
CKE
COMMAND
DQM
A(0:9,11:12)
A(10)
BA(0,1)
DQ
Don’t Care
Undefined
T0 T1
T2
T3 T4 T5 T6 T7 T8
m2
65
Packaging Production
Figure 49: 128-lead Ceramic, Shallow Side-Braze, Dual Sided Quad Flatpack
66
Figure 50: 128-lead Ceramic, Deep Side-Braze, Dual Sided Quad Flatpack
(Datasheet Case Outline: Z / SMD Case Outline: Y)
67
ORDERING INFORMATION
64Meg x 40 SDRAM
64Meg x 48 SDRAM
Access Time:
(75) = 10ns cycle time
Package Type:
(Y) = 128-lead ceramic, shallow side-braze, dual sided, quad flatpack
(Z) = 128-lead ceramic, deep side-braze, dual sided, quad flatpack
Screening: (Notes 2 and 3)
(E) = HiRel Flow (Temperature Range: -40oC to +105oC)
(P) = Prototype flow (Temperature Range: 25oC only)
Device Type:
(8SDMQ64M40) = 64Meg x 40
(8SDMQ64M48) = 64Meg x 48
Lead Finish: (Note 1)
(C) = Gold
Notes:
1. Lead finish is "C" (Gold) only, and must be specified.
2. Prototype Flow per Aeroflex Manufacturing Flows Document. Devices are tested at 25oC only. Radiation is neither tested nor
guaranteed.
3. HiRel flow per Aeroflex Manufacturing Flows Document. Radiation is neither tested nor guaranteed.
UT ********** - ** * * *
68
64Meg x 40 SDRAM: SMD
64Meg x 48 SDRAM: SMD
5962 - ***** ** * * *
Notes:
1. Lead finish is "C" (Gold) only.
2. Aeroflex’s Q+ assembly flow, as defined in section 4.2.1.d of the SMD, provides QML Q product through the SMD that is manufactured
with Aeroflex’s standard QML V flow.
Federal Stock Class Designator: No Options
Total Dose
(D) = 1E4 (10krad(Si))
(P) = 3E4 (30krad(Si))
(L) = 5E4 (50krad(Si))
(R) = 1E5 (100krad(Si)) (Contact Factory)
Drawing Number:
10229: 2.5G SDRAM (64 meg x 40)
10230: 3.0G SDRAM (64 meg x 48)
Device Type (NOTE 2)
(01) = SDRAM (-40oC to +105oC)
(02) = SDRAM assembled to Aeroflex Q+ Flow (-40oC to +105oC)
Class Designator:
(Q) = QML Class Q
Case Outline:
(X) = 128-lead ceramic, shallow side-braze, dual sided, quad flatpack
(Y) = 128-lead ceramic, deep side-braze, dual sided, quad flatpack
Lead Finish: NOTE 1
(C) = Gold
69
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attributes represented by the se three icon s:
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Aeroflex Colorado Springs (Aeroflex) reserves the right to
make changes to any products and services herein at any time
without notice. Consult Aeroflex or an authorized sales
representative to verify that the information in this data sheet
is current before using this product. Aeroflex does not assume
any responsibility or liability arising out of the application or
use of any product or service described herein, except as
expressly agreed to in writing by Aeroflex; nor does the
purchase, lease, or use of a product or service from Aeroflex
convey a license under any patent rights, copyrights,
trademark rights, or any other of the intellectual rights of
Aeroflex or of third parties.
Aeroflex Colorado Springs - Datasheet Definition
Advanced Datasheet - Product In Development
Preliminary Datasheet - Shipping Prototype
Datasheet - Shipping QML & Reduced Hi-Rel
