M-C-C: TO-92 Plastic-Encapsulate Transistors i @,_ TO-92 1.EMITTER 2,COLLECTOR 3.BASE KTC3194 TRANSISTOR(NPN) FEATURES Pem: 0.625W (Tamb=25C) lem: O.02A voltage: Vierycso: 40 V gtotage Junction temperature range Ta,Tstg: -55C to + 150C ELECTRICAL CHARACTERISTICS (Tamb=25C unless otherwise specified) Coltector-base breakdown voitage V(BR)CBO Ic= 100 u A, le=0 40 : Vv Collector-emitter breakdown voltage | V(eR)CEO Ic= 1 mA, Ip=0 30 Vv Emitter-base breakdown voltage V(BR)EBO le= 100 u A, Ic=0 4 Vv Collector cut-off current IcBo Vca= 40 V, le=0 0.5 LA Emitter cut-off current leBo Ves= 4 V, Ic=0 0.5 nA DC current gain hre Vce=6 V, lc= 1mMA 40 200 Transition frequency fr Vce= 6 V, Ic= mA 450 MHz CLASSIFICATION OF hre Rank R 0 Y Range 40-80 70-140 100-200 127