2SD1140
2009-12-21
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) (Darlington Power Transistor)
2SD1140
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 30 V
Collector-emitter voltage VCEO 30 V
Emitter-base voltage VEBO 10 V
Collector current IC 1.5 A
Base current IB 50 mA
Collector power dissipation PC 900 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg 55 to 150 °C
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Unit: mm
JEDEC TO-92MOD
JEITA
TOSHIBA 2-5J1A
Weight: 0.36 g (typ.)
BASE
EMITTER
COLLECTOR
2SD1140
2009-12-21
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 30 V, IE = 0 10 μA
Emitter cut-off current IEBO V
EB = 10 V, IC = 0 10 μA
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 30 V
DC current gain hFE V
CE = 2 V, IC = 150 mA 4000
Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 1 mA 1.5 V
Base-emitter saturation voltage VBE (sat) I
C = 1 A, IB = 1 mA 2.2 V
Turn-on time ton 0.2
Storage time tstg 0.6
Switching time
Fall time tf
IB1 = 1 mA,IB2 = 1 mA
duty cycle 1%
0.3
μs
Marking
Note2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
D1140
Lot No.
Note2
Part No. (or abbreviation code)
IB1
20 μsInput
IB2
VCC = 15 V
Output
15 Ω
2SD1140
2009-12-21
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Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (mA)
hFE – IC
DC current gain hFE
Collector current IC (A)
Collector current IC (A)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (mA)
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (mA)
0
0
100
600
4 6
IB = 10 μA
20
Common emitter
Ta = 25°C
300
200
400
500
1 2 3 5
30
40
50
60
0
0
0
100
600
4 6
Common emitter
Ta = 100°C
300
200
400
500
1 2 3 5
IB = 5 μA
10
15
20
25
35
0
30
0
0
100
600
4 6
Common emitter
Ta = 50°C
300
200
400
500
1 2 3 5
IB = 20 μA
40
60
80
100
0
120
140
160
100000
0.003
Common emitter
VCE = 2 V
300
500
3000
5000
10000
30000
50000
0.01 0.03 0.1 0.3 1
Ta = 100°C
25
50
1000
0.1
0.003
10
Ta = 50°C
100
25
Common emitter
IC/IB = 1000
1
0.3 1 0.01 0.03 0.1
0.3
0.5
3
5
0
0
0.2
1.0
0.4 0.8 1.6 2.4
Common emitter
VCE = 2 V
Ta = 100°C 25 50
1.2 2.0
0.4
0.6
0.8
2SD1140
2009-12-21
4
Collector-emitter voltage VCE (V)
Safe Operating Area
Collector current IC (mA)
Collector current IC (A)
Base-emitter saturation voltage
VBE (sat) (V)
VBE (sat) – IC
Ambient temperature Ta (°C)
PC – Ta
Collector power dissipation PC (W)
10
Common emitter
IC/IB = 1000
0.002 0.1 1
0.1
3
Ta = 50°C
100
25
3 0.3 0.01 0.03
0.3
0.5
1
5
0
0
0.2
0.8
20 40 80 100 140 60 120
0.4
1.0
0.6
160
1 3 10 30
10
0.5
3000
100
300
500
1000
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max
(
continuous
)
IC max (pulsed)*
VCEO max
1 ms*
10 ms*
10 μs*
DC operation
(Ta = 25°C)
30
50
100 μs*
2 s*
300 ms*
2SD1140
2009-12-21
5
RESTRICTIONS ON PRODUCT USE
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in this document, and related hardware, software and systems (collectively “Product”) without notice.
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all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
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