CLY5
High Powe r G a As FET
Applications
• Test and Measurement Equipment
• Defense Communications
• General Purpose Wireless
Product Fe a t ures
• 400 – 2500 MHz Operating Range
• Wide Operating Voltage Range: +2.7 V to +6 V
• POUT=+26.5 dBm at VD=+3 V, f=1.8 GHz
• High Efficiency: >55 %
Gener a l Des cr iption
The CLY5 is a high-breakdown voltage GaAs FET
designed f or po wer amplif ie r appl ic ations i n the 400
MHz
to 2.5 GHz frequency range. Excellent linearity and
easy impedance matching make this device an ideal
choice for portable PA applications in mobile phones and
WLAN transceivers. The CLY5 provides +26.5 dBm
output power, with an associated gain of 9.5
dB, at 1.8
GHz and V
DS=+3 V. Power added efficiencies to 55%
are achievable.
The
CLY5 is housed in an industry-standard lead
-
free
/ green / RoHS-compliant SOT-223 package.
4 Pin SOT-223 Package
Functional Block Diagram
Gate Drain
Source
21 3
4
Source
Ordering Inform a ti on
Part No.
Description
CLY5
High Pow er GaAs FET
Standard T/R size = 1000 pieces on a 13” reel.
Pin Configurati on
Pin No.
Label
1
Gate
2, 4
Source
3
Drain
Datasheet: Rev G 08-29-14 - 1 of 9 - Disclaimer: Subject to change without notic e
© 2014 TriQuint www.triquint.com
CLY5
High Powe r G a As FET
Recomme nded O pe rati ng Conditions
Parameter
Min
Typ
Max
Units
T
CASE
−40
+85
°C
TJ (for >106 hours MTTF)
+150
°C
Electrical specifications are measured
at specified test conditions.
Specifications are not guaranteed over all recommended
operating con dit ion s.
Absolute Maximum Ratings
Parameter
Rating
Storage Temperature (TSTG) −55 to 150°C
Drain-sourc e vo lta ge (V
DS
)
+9 V
Drain-g ate vo lta ge (VDG)
+12 V
Gate-source voltage (V
GS
)
−6 V
Drain current (I
D
)
1.2 A
Pulse peak power (P
PULSE
)
9 W
Total power dissipation (P
TOT
)
(T
s
< 80 °C), T
s
: Temperature at soldering point
2 W
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Electrical Specifications
Test conditions unless otherwise noted: TA=+25°C, Freq.=1.8 GHz
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Drain-Source Saturation Current
IDSS
VDS = +3 V, VGS = 0 V 600 800 1000 mA
Drain-Source Pinch-Off Current
ID
V
DS
= +3 V, V
GS
= −3.8 V
-
10
100
µA
Gate Pinch-Off Current
IG
VDS = +3 V, VGS = −3.8 V - 5 20 µA
Pinch-Off Voltage
VGS(p)
V
DS
= +3 V, I
D
= 100 µA
-3.8
-2.8
-1.8
V
Small Signal Gain (1) G VDS = +3 V, ID = 350 mA, PIN = 0 dBm 10.5 11.0 - dB
VDS = +5 V, ID = 350 mA, Pin = 0 dBm 11.5 12.0 - dB
Small Signal Gain
(2)
Gp
V
DS
= +3 V, I
D
= 350 mA, Pin = 0 dBm
9.0
9.5
-
dB
Output Power Po VDS = +3 V, ID = 350 mA, Pin = +19 dBm +26.5 +27 - dBm
V
DS
= +5 V, I
D
= 350 mA, Pin = +21 dBm
+29.5
+30
-
dBm
1dB-Compression Point P1dB VDS = +3 V, ID = 350 mA - +26.5 - dBm
VDS = +5 V, ID = 350 mA - +30 - dBm
Power Added Efficiency
PAE
V
DS
= +5 V, I
D
= 350 mA, Pin = +21 dBm
40
55
-
%
Noise figure NF VDS = +5 V, ID = 350 mA 1.72 dB
Thermal Resistance
Rth
Channel-so lder ing poi nt
35
°C/W
Notes:
1. Matching conditions for maximum small signal gain (not identical with power matching conditions!)
2. Power matching conditions: f = 1.8 GHz, Source Match (Γms) Mag. 0.58; Ang. −143°; Load Match (Γml) Mag. 0.76; Ang. −116°
Datasheet: Rev G 08-29-14 - 2 of 9 - Disclaimer: Subject to change without notic e
© 2014 TriQuint www.triquint.com
CLY5
High Powe r G a As FET
Common Sour c e S-Parameters ( VDS = +3 V )
Test conditions unless otherwise noted: VDS = +3 V, ID = 350 mA (typ.), Temp. = +25 °C, 50 Ohm system
Freq (GHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
100
0.9702
-30.6
14.9423
158.4
0.0103
85.9
0.2969
-175.8
150
0.9597
-44.7
14.2076
148.9
0.0134
71.7
0.3155
-177.3
200
0.9136
-59.6
13.3921
140.2
0.0189
67.4
0.3309
-175.1
250 0.8786 -71.8 12.5257 131.9 0.0218 66.8 0.3402 -176.1
300
0.8374
-83.2
11.6493
124.9
0.0261
66.1
0.3509
-177.6
400
0.7927
-104.6
10.0502
111.8
0.0318
60.6
0.3793
179.2
500
0.7507
-122.7
8.7221
100.7
0.0374
57.7
0.3970
176.2
600
0.7204
-138.3
7.6207
91.1
0.0424
53.6
0.4130
172.4
700 0.6962 -151.7 6.7149 82.8 0.0477 49.5 0.4283 168.0
800
0.6923
-163.7
5.9699
75.3
0.0519
46.7
0.4377
164.3
900
0.6833
-174.6
5.3660
67.9
0.0562
42.4
0.4501
160.8
1000
0.6829
175.9
4.8399
61.7
0.0614
41.2
0.4596
157.2
1200
0.6922
159.0
4.0337
49.3
0.0687
35.3
0.4811
150.5
1400 0.7041 144.0 3.4168 38.0 0.0761 29.8 0.5035 143.3
1500
0.7130
137.8
3.1757
32.7
0.0813
26.9
0.5133
140.4
1600
0.7197
131.2
2.9317
27.5
0.0849
25.6
0.5259
136.9
1800
0.7414
119.9
2.5649
17.7
0.0919
17.4
0.5478
130.4
2000
0.7622
109.5
2.2367
7.8
0.0967
11.0
0.5701
123.9
2200 0.7798 100.5 1.9842 -1.0 0.1015 6.3 0.5931 117.7
2400
0.8001
92.3
1.7624
-9.6
0.1055
1.1
0.6156
111.3
2500
0.8085
88.3
1.6590
-13.8
0.1083
-2.7
0.6265
108.2
3000
0.8413
71.7
1.2639
-32.5
0.1145
-15.4
0.6780
93.9
3500
0.8723
57.7
1.0034
-49.3
0.1179
-27.8
0.7216
81.3
4000 0.8837 45.5 0.8275 -64.9 0.1257 -39.5 0.7539 69.6
4500
0.8914
34.7
0.7034
-78.3
0.1247
-50.9
0.7710
57.9
5000
0.8985
24.3
0.6140
-91.4
0.1275
-60.8
0.7777
46.7
5500
0.9069
13.6
0.5521
-104.5
0.1361
-71.5
0.7907
34.8
6000
0.9159
2.7
0.5058
-118.6
0.1389
-83.4
0.8089
22.2
Noise Parameters ( VDS = +3 V )
Test conditions unless otherwise noted: VDS = +3 V, ID = 350 mA (typ.), Temp. = +25 °C, 50 Ohm system
Freq (MHz) NFmin (dB) MagOpt (mag) AngOpt (deg) Rn (Ω) rn
900 0.92 0.408 142 3.9 0.79
1800 1.72 0.664 -134 8.1 0.162
Datasheet: Rev G 08-29-14 - 3 of 9 - Disclaimer: Subject to change without notic e
© 2014 TriQuint www.triquint.com
CLY5
High Powe r G a As FET
Common Source S-Parameters ( VDS = +5 V )
Test conditions unless otherwise noted: VDS = +5 V, ID = 350 mA (typ.), Temp. = +25 °C, 50 Ohm system
Freq (GHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
100
0.9678
-31.3
16.8119
158.4
0.0095
85.0
0.1354
-161.6
150
0.9318
-43.8
15.8736
148.9
0.0123
72.8
0.1527
-159.1
200
0.9038
-58.1
15.0157
140.0
0.0165
71.3
0.1634
-156.8
250
0.8699
-70.1
14.0242
132.0
0.0187
66.3
0.1831
-158.0
300
0.8353
-81.9
13.0156
124.7
0.0238
64.5
0.1947
-160.5
400
0.7801
-102.9
11.2669
111.3
0.0286
59.2
0.2278
-165.2
500
0.7343
-120.2
9.8117
100.2
0.0332
56.1
0.2441
-169.2
600
0.7033
-135.4
8.5306
90.5
0.0384
53.9
0.2660
-173.6
700
0.6836
-148.9
7.5315
82.3
0.0422
50.2
0.2790
-178.3
800
0.6692
-161.2
6.7254
74.3
0.0473
51.1
0.2933
178.2
900
0.6638
-172.2
6.0311
66.8
0.0492
44.4
0.3080
174.1
1000
0.6609
178.3
5.4737
60.5
0.0529
42.5
0.3214
170.3
1200
0.6721
161.4
4.5677
47.7
0.0629
39.6
0.3501
162.7
1400
0.6855
146.6
3.8869
36.4
0.0681
34.3
0.3745
156.4
1500
0.6952
139.7
3.5927
30.5
0.0727
31.2
0.3897
153.1
1600
0.7006
133.5
3.3304
24.9
0.0729
28.7
0.4036
149.6
1800
0.7226
122.0
2.9092
14.6
0.0831
24.3
0.4333
143.0
2000
0.7467
111.9
2.5470
4.3
0.0890
16.4
0.4675
136.0
2200
0.7690
102.3
2.2428
-5.2
0.0963
11.8
0.4960
129.5
2400
0.7902
93.9
1.9933
-14.4
0.0979
5.7
0.5287
123.0
2500
0.8006
89.9
1.8674
-18.8
0.1008
2.6
0.5440
119.2
3000
0.8429
73.2
1.4113
-39.3
0.1107
-9.5
0.6182
104.2
3500
0.8759
59.0
1.1024
-57.2
0.1174
-22.2
0.6831
90.0
4000
0.8916
46.9
0.8874
-73.4
0.1231
-35.3
0.7301
77.4
4500
0.8991
35.4
0.7293
-88.1
0.1242
-47.1
0.7573
64.6
5000
0.9035
24.7
0.6214
-101.3
0.1292
-56.0
0.7784
53.0
5500
0.9164
14.0
0.5480
-114.3
0.1338
-67.4
0.7987
40.3
6000
0.9248
2.9
0.4926
-128.3
0.1380
-80.1
0.8228
27.1
Noise Parameters ( VDS = +5 V )
Test conditions unless otherwise noted: VDS = +5 V, ID = 350 mA (typ.), Temp. = +25 °C, 50 Ohm system
Freq (MHz) NFmin (dB) MagOpt (mag) AngOpt (deg) Rn (Ω) rn
900 1.05 0.369 139 4.9 0.097
1800 1.94 0.603 −132 10.9 0.218
Datasheet: Rev G 08-29-14 - 4 of 9 - Disclaimer: Subject to change without notic e
© 2014 TriQuint www.triquint.com
CLY5
High Powe r G a As FET
Perf orm a nc e Plots
Test conditions unless otherwise noted: ID=350 mA (typ.), Freq.=1800 MHz, Temp=+25°C
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
35
1 2 3 4 5 6 7 8
PAE (%)
P1dB (dBm)
Drain-Source Voltage (V)
P1dB & PAE vs. Drain-Source Voltage
P1dB
PAE
0
4
8
12
16
20
0.0
0.4
0.8
1.2
1.6
2.0
1 2 3 4 5 6 7 8
Gain (dB)
P1dB (W)
Drain-Source Voltage (V)
P1dB & Gain vs. Drain-Source Voltage
P1dB
Gain
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0123456
P
TOTAL
(W)
Drain Current (ma)
Drain-Source Voltage (V)
I-V Characteristics
VG0
VGp5
VG1
VG1p5
VG2
Ptot
Temp.=+25°C
Datasheet: Rev G 08-29-14 - 5 of 9 - Disclaimer: Subject to change without notic e
© 2014 TriQuint www.triquint.com
CLY5
High Powe r G a As FET
Total P ow er Diss ipa t ion
P
tot
= f(T
s
)
Ptot
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
[W]
050 100 150
TsC
O
Permissible Pulse Load
P
totmax
/P
totDC
= f(tp)
Datasheet: Rev G 08-29-14 - 6 of 9 - Disclaimer: Subject to change without notic e
© 2014 TriQuint www.triquint.com
CLY5
High Powe r G a As FET
Incr e a s e d Power Handl ing Capabi lity – Pulsed Applic ati ons
577µs
4,615ms
GSM/PCN TDMA-Frame:
125.0
4.615ms
ms577.0
T
t
= D p==
Take value
P
Ptot
tot
max
DC
from diagram permissible pulse load -->
1.4
P
P
DC
max
tot
tot ≈
W2.8 = 1.4 W 2 = Ptot ×
417µs
10ms
DECT TDMA-Frame:
0417.0
4.615ms
ms10
T
t
= D p==
Take value
P
Ptot
tot
max
DC
from diagram permissible pulse load -->
1.5
P
P
DC
max
tot
tot ≈
W3
= 1.5 W 2 = Ptot ×
Datasheet: Rev G 08-29-14 - 7 of 9 - Disclaimer: Subject to change without notic e
© 2014 TriQuint www.triquint.com
CLY5
High Powe r G a As FET
Package Marking and Dimensions
Marking
Part Identifier: CLY5
Lot Code: XXXX
Date Code: YYWW
NOTES:
1. All dimensions are in millimeters. Angles are in degrees
Datasheet: Rev G 08-29-14 - 8 of 9 - Disclaimer: Subject to change without notic e
© 2014 TriQuint www.triquint.com
CLY5
High Powe r G a As FET
Product Com pliance Information
ESD Sensiti vit y Rati ngs
Caut ion! ESD-Sen s itive Device
Solderability
Compatible with both lead
-
free (260 °C max. reflow
temperature) and tin/lead (245 °C max. reflow
temperature) soldering processes.
Package contact
plating: NiPdAu
RoHs Compliance
This part
is
compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
MSL Rating
MSL
Rating: Level 3
Test:
260°C convection reflow
Standard:
JEDEC Standard IPC/JEDEC J-STD-020
Contact Inform ation
For the lates t specific ations, add itional prod uct infor mation, worldwide sal es and distr ibution loca tions, and inf orm ation
about
TriQuint:
Web: www.triquint.com Tel: +1.503.615.9000
Email: info-sales@tqs.com Fax: +1.503.615.8902
For technical questions and application information:
Email: sjcapplications.engineering@tqs.com
Impor t a nt Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained here
in.
TriQuint assumes no responsibility or liability whatsoever for any of the information contained
herein. T riQuint assum es no respons ibilit y or liabilit y whatsoever f or the use of the inform ation cont ained herein. The
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with
such information is entirely with the user. All information contained herein is subject to change without notice.
Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The
information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or
anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life
-saving, or life
-
sustaining applications, or other applications where a failure would reasonably be expected to cause se vere personal
injury or death.
Datasheet: Rev G 08-29-14 - 9 of 9 - Disclaimer: Subject to change without notic e
© 2014 TriQuint www.triquint.com
