DPG20C300PN HiPerFRED VRRM = 300 V I FAV = 2x 10 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG20C300PN Backside: isolated 1 2 3 Features / Advantages: Applications: Package: TO-220FP Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Isolation Voltage: 2500 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Soldering pins for PCB mounting Base plate: Plastic overmolded tab Reduced weight IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a DPG20C300PN Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 300 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case typ. VR = 300 V TVJ = 25C 1 A VR = 300 V TVJ = 150C 0.06 mA TVJ = 25C 1.27 V 1.45 V 0.98 V IF = forward voltage drop min. 10 A IF = 20 A IF = 10 A IF = 20 A TVJ = 150 C TC = 125C rectangular 1.17 V T VJ = 175 C 10 A TVJ = 175 C 0.74 V d = 0.5 for power loss calculation only 17.7 m 4.4 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = 150 V f = 1 MHz TVJ = 25C 15 pF I RM max. reverse recovery current TVJ = 25 C 3 A t rr reverse recovery time IF = IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved K/W 0.50 TC = 25C 10 A; VR = 200 V -di F /dt = 200 A/s 35 140 W A TVJ = 125C 5.5 A TVJ = 25 C 35 ns TVJ = 125C 45 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a DPG20C300PN Package Ratings TO-220FP Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 C -55 150 C 150 C Weight 2 MD mounting torque FC mounting force with clip d Spp/App d Spb/Apb VISOL terminal to terminal 1.6 terminal to backside 2.5 creepage distance on surface | striking distance through air t = 1 second isolation voltage t = 1 minute Product Marking Part Number Logo DateCode Assembly Code 50/60 Hz, RMS; IISOL 1 mA g 0.4 0.6 Nm 20 60 N 1.0 mm 2.5 mm 2500 V 2100 V Part number D P G 20 C 300 PN abcdef = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-220ABFP (3) YYWW Z XXXXXX Assembly Line Ordering Standard Part Number DPG20C300PN Similar Part DPG20C300PB Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG20C300PN Package TO-220AB (3) * on die level Delivery Mode Tube Code No. 503665 Voltage class 300 T VJ = 175 C Fast Diode V 0 max threshold voltage 0.74 V R 0 max slope resistance * 14.5 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a DPG20C300PN Outlines TO-220FP E A OP A1 Q H D 1 2 3 L1 A2 L b1 c b e 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Millimeters min max 4.50 4.90 2.34 2.74 2.56 2.96 0.70 0.90 0.45 0.60 15.67 16.07 9.96 10.36 2.54 BSC 6.48 6.88 12.68 13.28 3.03 3.43 3.08 3.28 3.20 3.40 Dim. 2 A A1 A2 b c D E e H L L1 OP Q Inches min max 0.177 0.193 0.092 0.108 0.101 0.117 0.028 0.035 0.018 0.024 0.617 0.633 0.392 0.408 0.100 BSC 0.255 0.271 0.499 0.523 0.119 0.135 0.121 0.129 0.126 0.134 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a DPG20C300PN Fast Diode 30 0.4 12 TVJ = 125C VR = 200 V 25 TVJ = 25C 125C 150C 20 IF 10 IF = 5 A 0.3 20 A 10 A 0.2 [A] 10 A 20 A IRR Qrr 15 8 [C] 5A 6 [A] 10 4 0.1 5 TVJ = 125C 2 0 0.0 0.0 0.4 0.8 1.2 1.6 2.0 VR = 200 V 0 0 100 200 300 400 500 0 100 200 -diF /dt [A/s] VF [V] Fig. 1 Forward current IF versus VF 300 400 500 -diF /dt [A/s] Fig. 3 Typ. reverse recov. current IRR versus -diF /dt Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt 100 12 400 9 300 TVJ = 125C VR = 200 V 1.2 80 trr 60 0.8 Kf VFR IRR 10 A 0.4 [V] 5A Qrr 0 40 80 120 160 [ns] TVJ [C] 100 200 300 400 500 0 10 100 200 300 400 0 500 -diF /dt [A/s] -diF /dt [A/s] Fig. 4 Typ. dynamic parameters Qrr, IRR versus TVJ 100 tfr 0 0 200 VFR 3 20 0.0 0 IF = 10 A VR = 200 V 6 IF = 20 A [ns] 40 tfr TVJ = 125C Fig. 6 Typ. forward recov. voltage VFR and tfr versus diF /dt Fig. 5 Typ. reverse recov. time trr versus -diF /dt 10 TVJ = 125C VR = 200 V 8 IF = 5 A Erec 6 ZthJH 10 A 20 A 1 [K/W] [J] 4 Rthi [K/W] 0.3474 0.633 0.5473 2.162 0.7102 2 0 0 100 200 300 400 500 0.1 0.001 -diF /dt [A/s] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 0.01 0.1 1 10 ti [s] 0.0003 0.0035 0.029 1.2 7.8 100 t [s] Fig. 8 Transient thermal resistance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a