DPG20C300PN
Low Loss and Soft Recovery
High Performance Fast Recovery Diode
Common Cathode
HiPerFRED²
1 2 3
Part number
DPG20C300PN
Backside: isolated
FAV
rr
tns35
RRM
10
300
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
TO-220FP
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Base plate: Plastic overmolded tab
● Reduced weight
● Isolation Voltage: V~
2500
IXYS reserves the right to change limits, conditions and dimensions. 20131126aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG20C300PN
n
s
3
A
T
VJ
=°C
reverse recovery time
A
5.5
35
45
n
s
I
RM
max. reverse recovery current
I
F
=A;10
25
T=125°C
VJ
-di
F
=A/µs200/dtt
rr
V
R
=V200
T
VJ
=°C25
T=125°C
VJ
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
1.27
R4.4 K/
W
R
min.
10
V
RSM
V
1T = 25°C
VJ
T = °C
VJ
m
A
0.06V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
125
P
tot
35
W
T = 25°C
C
RK/
W
10
300
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
1.45
T = 25°C
VJ
150
V
F0
V
0.74T = °C
VJ
175
r
F
17.7 m
Ω
V
0.98T = °C
VJ
I = A
F
V
10
1.17
I = A
F
20
I = A
F
20
threshold voltage
slope resistance for power loss calculation only
µ
A
150
V
RRM
V
300
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
15
j
unction capacitance V = V150 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
175
140
A
300
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Fast Diode
300
0.50
IXYS reserves the right to change limits, conditions and dimensions. 20131126aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG20C300PN
Ratings
Logo
Part Number
DateCode
Assembly Code
Product Marking
Assembly Line
XXXXXX
YYWW Z
abcdef
D
P
G
20
C
300
PN
Part number
Diode
HiPerFRED
extreme fast
Common Cathode
TO-220ABFP (3)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm0.6
mounting torque 0.4
T
VJ
°C175
virt ua l j un ctio n temp eratu re -55
Weight g2
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N60
mount ing for ce w i th cli p 20
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
1.6 1.0
2.5 2.5
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 35 A
per terminal
150-55
terminal to terminal
TO-220FP
Similar Part Package Voltage class
DPG20C300PB TO-220AB (3) 300
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
DPG20C300PN 503665Tube 50DPG20C300PNStandard
2500
ISOL
T
stg
°C150
storage temperature -55
2100
threshold voltage V0.74
mΩ
V
0 max
R
0 max
slope resistance * 14.5
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Fast
Diode
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131126aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG20C300PN
Ø P A
A1
H
A2
Q
L1
D
E
L
b
b1 c
e
123
min max min max
A4.50 4.90 0.177 0.193
A1 2.34 2.74 0.092 0.108
A2 2.56 2.96 0.101 0.117
b0.70 0.90 0.028 0.035
c0.45 0.60 0.018 0.024
D15.67 16.07 0.617 0.633
E9.96 10.36 0.392 0.408
e
H6.48 6.88 0.255 0.271
L12.68 13.28 0.499 0.523
L1 3.03 3.43 0.119 0.135
ØP 3.08 3.28 0.121 0.129
Q3.20 3.40 0.126 0.134
Dim.
Millimeters Inches
2
.54 BSC 0.100 BS
C
1 2 3
Outlines TO-220FP
IXYS reserves the right to change limits, conditions and dimensions. 20131126aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG20C300PN
0 100 200 300 400 500
0
20
40
60
80
100
0 40 80 120 160
0.0
0.4
0.8
1.2
K
f
T
VJ
[°C]
0 100 200 300 400 500
0
3
6
9
12
0
100
200
300
400
V
FR
[V]
0 100 200 300 400 500
0
2
4
6
8
10
12
0 100 200 300 400 500
0.0
0.1
0.2
0.3
0.4
0.0 0.4 0.8 1.2 1.6 2.0
0
5
10
15
20
25
30
I
RR
[A]
Q
rr
[μC]
I
F
[A]
V
F
[V] -di
F
/dt [A/μs]
t
rr
[ns]
V
FR
t
fr
I
RR
Q
rr
-diF/dt [A/μs]
T
VJ
= 125°C
V
R
= 200 V
-di
F
/dt [A/μs]
5 A
10 A
T
VJ
=125°C
V
R
=200 V
-di
F
/dt [A/μs]
t
fr
[ns]
0.001 0.01 0.1 1 10 100
0.1
1
10
t[s]
Z
thJH
[K/W]
0 100 200 300 400 500
0
2
4
6
8
10
E
rec
[μJ]
-di
F
/dt [A/μs]
Fig. 1 Forward current
I
F
versus V
F
Fig. 2 Typ. reverse recov. charge
Q
rr
versus -di
F
/dt
Fig. 3 Typ. reverse recov. current
I
RR
versus -di
F
/dt
Fig. 4 Typ. dynamic parameters
Q
rr
,I
RR
versus T
VJ
Fig. 5 Typ. reverse recov. time
t
rr
versus -di
F
/dt
Fig. 6 Typ. forward recov. voltage
V
FR
and t
fr
versus di
F
/dt
Fig. 7 Typ. recovery energy
E
rec
versus -di
F
/dt
Fig. 8 Transient thermal resistance junction to case
I
F
=5 A
10 A
20 A
T
VJ
= 125°C
V
R
= 200 V
I
F
= 20 A
I
F
= 5 A
10 A
20 A
T
VJ
= 125°C
V
R
= 200 V
20 A
10 A
5 A
T
VJ
= 25°C
125°C
150°C
T
VJ
= 125°C
I
F
= 10 A
V
R
= 200 V
Rthi [K/W]
0.3474
0.633
0.5473
2.162
0.7102
ti[s]
0.0003
0.0035
0.029
1.2
7.8
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions. 20131126aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
