SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs IGBTs Phototransistors 1 2011/9 SCE0004L Bipolar Small-Signal Transistors General-Purpose Transistors (Single) 50 General-purpose Low noise High current 100 150 30 500 50 500 120 100 12 400 12 500 15 800 25 800 30 800 10 2000 20 2000 20 1500 20 2500 30 3000 50 1000 50 1700 50 2500 PNP (mm) NPN PNP 2SC6026MFV 2SA2154MFV (mm) NPN PNP 1.7 2.0 2.1 0.8 1.6 (mm) NPN UFM 2.0 1.6 0.8 1.2 1.2 USM 2.1 0.6 IC (mA) Max 1.0 Classification VCEO (V) Max (Surface-Mount Type) SSM VESM 1.25 CST3 (mm) NPN PNP TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SA1954 (mm) NPN 2SC6026CT 2SA2154CT 2SC5376FV 2SA1955FV 2SC4738 2SC5376 2SA1832 2SA1955 2SC6133* 10 5000 (3000) High breakdown voltage 80 300 High hFE 50 150 Muting 20 300 High-speed switching 15 200 High-voltage switching 200 50 High breakdown voltage 250 50 300 100 Darlington 40 300 2SA2214* 2SA2215* 2SC6134* 2SC6135* 2SA2195* 2SC6100* Strobe PNP 2SC4213 For the PNP transistors, the minus sign () indicating a negative voltage is omitted. The products shown in bold are also manufactured in offshore fabs. Contact the Toshiba sales representative for information about RoHS compliance before you purchase any com 2 2011/9 SCE0004L S-MINI 2.5 1.5 2.9 (mm) NPN PNP 2SC2712 2SC2859 2SC3325 2SC2713 2SC3324 2SA1162 2SA1182 2SA1313 2SA1163 2SA1312 2SC5232 2SA1953 2SA1362 2SA1298 2SA1621 2SC3265 2SA1620 2SC3326 2SC3138 2SC4497 2SA1721 *: New product 3 2011/9 SCE0004L General-Purpose Transistors (Dual) Dual Type CST6 ESV 1.0 (12) General -purpose 50 500 NPN PNP PNP (mm) (mm) PNP NPN NPN (mm) PNP NPN High current 120 (11) (4) HN4B04J (3) 400 12 500 15 800 30 800 10 2000 20 2000 Strobe 10 5000 High breakdown voltage 80 300 High hFE 50 150 Muting 20 300 High-speed switching 15 200 High-voltage switching 200 50 High breakdown voltage (2) 100 12 250 50 300 100 PNP NPN PNP HN4C06J Low noise 1.6 2.8 2.1 1.25 1.6 1.0 0.8 0.9 (mm) NPN (HN2B26CT) (HN1C26FS) (HN1A26FS) 2SA1873 (18) ** (7) (HN1B26FS) HN4B01JE 2SC4944 (1) 2SC4207 2SA1618 (10) (HN2C26FS) (HN2A26FS) (9) (6) ( 2) HN4A56JU (2) (1) 150 (100) 500 2.9 1.6 (mm) 30 SMV 2.0 1.0 NPN PNP 50 USV 1.2 VCEO IC Classification (V) (mA) Max Max fS6 HN4C51J HN4A06J (1) HN4A51J (5) HN4C05JU HN4B06J (3) (4) ( 2) Darlington 40 300 For the PNP transistors, the minus sign () indicating a negative voltage is omitted. The ratings enclosed in parenthesis are for those devices whose part numbers are enclosed in parentheses. The products shown in bold are also manufactured in offshore fabs. Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. Internal Connections Number of Pins 5 1 Q1 2 Q2 Q1 7 6 Q1 Q2 Q1 8 Q2 Q1 13 6 3 4 Q2 9 Q2 Q1 15 Q1 Q1 6 Q2 Q1 11 Q2 Q1 16 Q1 Q1 Q2 10 Q2 Q1 14 Q2 Q1 5 Q2 12 Q2 Q1 17 Q2 18 Q1 Q2 Q2 Q2 Q1 Q1 Q2 Q2 The internal connection diagrams only show the general configurations of the circuits. 4 * 2011/9 SCE0004L ES6 US6 SM6 PNP NPN PNP (10) HN2C01FE (12) HN3C67FE (17) 2.8 (mm) NPN HN1A01FE (7) HN2A01FE (11) (10) HN1B04FE HN2C01FU ( 9) (12) HN3C56FU (15) (mm) PNP NPN PNP HN1C01FU HN1C01FE 1.6 2.1 1.25 (mm) NPN 2.9 2.0 1.2 1.6 1.6 NPN PNP NPN PNP HN1B01FU HN1A01FU ( 7) HN2A01FU (11) HN1A01F (8) HN1B04FU HN1C01F (9) (10) HN3B02FU (7) HN3A56F (16) (14) HN1B01F (8) HN3B01F (13) HN1B04F HN1C07F (10) HN3C51F (15) HN1A07F (8) (7) HN3A51F (16) HN1C05FE (10) HN1A02F (7) HN1C03FU HN1C03F (10) (10) HN3C61FU (15) *: New product **: Under development 5 2011/9 SCE0004L (Single, General-Purpose) 20 50 100 R2 NPN PNP NPN PNP 4.7 4.7 10 10 22 22 47 47 2.2 47 RN1101CT RN1102CT RN1103CT RN1104CT RN1105CT RN1106CT RN1107CT RN1108CT RN1109CT RN1110CT RN1111CT RN1112CT RN1113CT RN2101CT RN2102CT RN2103CT RN2104CT RN2105CT RN2106CT RN2107CT RN2108CT RN2109CT RN2110CT RN2111CT RN2112CT RN2113CT RN1961CT RN1962CT RN1963CT RN1964CT RN1965CT RN1966CT RN1967CT RN1968CT RN1969CT RN1970CT RN1971CT RN1972CT RN1973CT RN2961CT RN2962CT RN2963CT RN2964CT RN2965CT RN2966CT RN2967CT RN2968CT RN2969CT RN2970CT RN2971CT RN2972CT RN2973CT 47 47 22 47 47 22 4.7 10 22 47 1 10 2.2 10 4.7 10 10 4.7 47 10 1 100 100 100 200 0.6 (mm) R1 10 VESM NPN RN1101ACT RN1102ACT RN1103ACT RN1104ACT RN1105ACT RN49P2ACT RN1106ACT RN1107ACT RN1108ACT RN1109ACT RN1110ACT RN1111ACT RN1112ACT RN1113ACT 1.6 (mm) (mm) NPN PNP ESM 1.2 1.2 1.0 (mm) 4.7 CST3 0.9 0.6 1.0 Internal Resistors (k) CST6 1.6 CST3 0.8 IC(mA) 50 0.85 VCEO(V) 1.0 Ratings Bias Resistor Built-in Transistors PNP NPN PNP RN2101ACT RN2102ACT RN2103ACT RN2104ACT RN2105ACT RN2106ACT RN2107ACT RN2108ACT RN2109ACT RN2110ACT RN2111ACT RN2112ACT RN2113ACT RN1101MFV RN1102MFV RN1103MFV RN1104MFV RN1105MFV RN1106MFV RN1107MFV RN1108MFV RN1109MFV RN1110MFV RN1111MFV RN1112MFV RN1113MFV RN1114MFV RN1115MFV RN1116MFV RN1117MFV RN1118MFV RN1119MFV RN1130MFV RN1131MFV RN1132MFV RN2101MFV RN2102MFV RN2103MFV RN2104MFV RN2105MFV RN2106MFV RN2107MFV RN2108MFV RN2109MFV RN2110MFV RN2111MFV RN2112MFV RN2113MFV RN2114MFV RN2115MFV RN2116MFV RN2117MFV RN2118MFV RN2119MFV RN2130MFV RN2131MFV RN2132MFV (mm) NPN RN2101F RN2102F RN2103F RN2104F RN2105F RN2106F RN2107F RN2108F RN2109F RN2110F RN2111F RN2112F RN2113F RN2114F RN2115F RN2116F RN2117F RN2118F RN1130F RN1131F RN1132F RN2130F RN2131F RN2132F For the PNP transistors, the minus sign () indicating a negative voltage is omitted. The products shown in bold are also manufactured in offshore fabs. Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. High Current Muting 50 20 300 S-MINI 2.9 2.9 2.5 2.5 Internal Resistors (k) 800 S-MINI 1.5 IC(mA) 1.5 Ratings (Single, High-Current/Muting Switch) VCEO(V) (mm) R1 R2 1 1 2.2 2.2 4.7 4.7 10 10 0.47 10 1 10 2.2 10 5.6 10 22 2.2 NPN RN1421 RN1422 RN1423 RN1424 RN1425 RN1426 RN1427 (mm) PNP NPN RN2421 RN2422 RN2423 RN2424 RN2425 RN2426 RN2427 RN1441 RN1442 RN1443 RN1444 For the PNP transistors, the minus sign () indicating a negative voltage is omitted. Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 6 PNP RN1101F RN1102F RN1103F RN1104F RN1105F RN1106F RN1107F RN1108F RN1109F RN1110F RN1111F RN1112F RN1113F RN1114F RN1115F RN1116F RN1117F RN1118F 2011/9 SCE0004L 50 100 SSM USM PNP RN2101 RN2102 RN2103 RN2104 RN2105 RN2106 RN2107 RN2108 RN2109 RN2110 RN2111 RN2112 RN2113 RN2114 RN2115 RN2116 RN2117 RN2118 2.5 1.5 2.1 (mm) RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107 RN1108 RN1109 RN1110 RN1111 RN1112 RN1113 RN1114 RN1115 RN1116 RN1117 RN1118 2.9 1.25 0.8 1.6 1.6 NPN S-MINI 2.0 (mm) NPN RN1301 RN1302 RN1303 RN1304 RN1305 RN1306 RN1307 RN1308 RN1309 RN1310 RN1311 RN1312 RN1313 RN1314 RN1315 RN1316 RN1317 RN1318 PNP RN2301 RN2302 RN2303 RN2304 RN2305 RN2306 RN2307 RN2308 RN2309 RN2310 RN2311 RN2312 RN2313 RN2314 RN2315 RN2316 RN2317 RN2318 (mm) NPN RN1401 RN1402 RN1403 RN1404 RN1405 RN1406 RN1407 RN1408 RN1409 RN1410 RN1411 RN1412 RN1413 RN1414 RN1415 RN1416 RN1417 RN1418 PNP RN2401 RN2402 RN2403 RN2404 RN2405 RN2406 RN2407 RN2408 RN2409 RN2410 RN2411 RN2412 RN2413 RN2414 RN2415 RN2416 RN2417 RN2418 7 2011/9 SCE0004L (Dual, General-Purpose (5 Pin) ) Internal Resistors Q2 USV 1.6 2.0 1.2 1.6 Q1 ESV 2.1 Absolute Maximum Ratings VCEO IC 1.25 Bias Resistor Built-in Transistors (mm) (mm) Classification NPN x 2 Q1 NPN PNP PNP x 2 Q2 Q1 R1 Q2 Q2 R1 (V) 50 R1 (k) R2 (mA) 100 General-purpose Muting (k) R2 R2 R1 Common emitter 4.7 4.7 4.7 4.7 10 10 10 10 22 22 22 22 RN1701JE RN1702JE RN1703JE RN1704JE RN1705JE RN1706JE RN1707JE RN1708JE RN1709JE RN1710JE RN1711JE R2 R1 R2 R1 Common emitter RN2701JE RN2702JE RN2703JE RN2704JE RN2705JE RN2706JE RN2707JE RN2708JE RN2709JE RN2710JE RN2711JE RN2712JE RN2713JE R2 R1 Collector-base connection RN47A3JE RN47A2JE 47 47 47 47 2.2 47 2.2 47 4.7 47 4.7 47 10 47 10 47 22 47 22 47 47 22 47 22 4.7 4.7 10 10 22 22 47 47 1 10 1 10 2.2 10 2.2 10 4.7 10 4.7 10 10 4.7 10 4.7 47 10 47 10 47 47 10 47 47 47 4.7 10 100 100 100 100 10 10 47 10 10 10 4.7 10 RN47A7JE RN47A8JE Q1: 50 Q1: 100 Q2: 12 Q2: 100 (Lowsat) Q1: 50 Q1: 100 Q2: 30 Q2: 100 (High hFE) 10 10 10 47 20 300 2.2 2.2 Q1 NPN PNP PNP x 2 Q2 Q1 RN47A1JE R1 Q2 R2 Q1 R2 R1 NPN x 2 Q2 R2 Q1 R2 R1 R2 R1 Common emitter RN1701 RN1702 RN1703 RN1704 RN1705 RN1706 RN1707 RN1708 RN1709 RN1710 RN1711 R2 R1 R2 R1 Common emitter RN2701 RN2702 RN2703 RN2704 RN2705 RN2706 RN2707 RN2708 RN2709 RN2710 RN2711 R2 R1 Collector-base connection RN47A3 RN47A2 RN47A1 RN2714 RN47A4JE RN47A5JE RN47A4 RN47A5 RN47A6 RN47A7 For the PNP transistors, the minus sign () indicating a negative voltage is omitted. The products shown in bold are also manufactured in offshore fabs. Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 8 2011/9 SCE0004L SMV 1.6 2.8 2.9 NPN x 2 Q1 (mm) NPN PNP PNP x 2 Q2 Q1 R1 Q2 Q2 R2 Q1 R2 R1 R2 R1 Common emitter RN1501 RN1502 RN1503 RN1504 RN1505 RN1506 RN1507 RN1508 RN1509 RN1510 RN1511 R2 R1 R2 R1 Common emitter R2 R1 Collector-base connection RN2501 RN2502 RN2503 RN2504 RN2505 RN2506 RN2507 RN2508 RN2509 RN2510 RN2511 RN1544 The internal connection diagrams only show the general configurations of the circuits. 9 2011/9 SCE0004L (Dual, General-Purpose (6 Pin) ) fS6 1.0 Classification Absolute Maximum Ratings VCEO IC Internal Resistors Q1 General -purpose General -purpose (Hi) Power SW 50 40 (30) PNP R1 R1 PNP NPN Q2 (k) (k) R1 R2 R1 R2 (V) NPN R2 Q1 Q2 R2 R1 R1 R2 Q1 R2 (V) 80 100 100 50 (12) (500) 4.7 4.7 4.7 10 10 10 10 22 22 22 22 47 47 47 47 2.2 47 2.2 47 4.7 47 4.7 47 10 47 10 47 22 47 22 47 47 22 47 22 4.7 4.7 10 10 22 22 47 47 1 10 1 2.2 10 4.7 RN1901AFS RN1902AFS RN1903AFS RN1904AFS RN1905AFS RN1906AFS RN1907AFS RN1908AFS RN1909AFS RN1910AFS RN1911AFS RN1912AFS RN1913AFS RN2901AFS RN2902AFS RN2903AFS RN2904AFS RN2905AFS RN2906AFS RN2907AFS RN2908AFS RN2909AFS RN2910AFS RN2911AFS RN2912AFS RN2913AFS Q1 NPN x 2 RN4981AFS RN4982AFS RN4983AFS RN4984AFS RN4985AFS RN4986AFS RN4987AFS RN4988AFS RN4989AFS RN4990AFS RN4991AFS RN4992AFS RN4993AFS 4.7 4.7 4.7 10 10 10 10 22 22 22 22 47 47 47 47 2.2 47 2.2 47 4.7 47 4.7 47 10 47 10 47 22 47 22 47 47 22 47 22 4.7 4.7 10 10 22 22 47 47 10 1 10 1 10 2.2 10 2.2 10 2.2 10 10 4.7 10 4.7 10 4.7 10 10 4.7 10 4.7 10 4.7 10 4.7 50 47 10 47 10 47 10 47 10 2.2 47 22 47 2.2 47 22 47 2.2 47 47 47 2.2 47 47 47 22 22 10 10 22 22 10 10 47 47 4.7 47 47 47 4.7 47 4.7 4.7 4.7 4.7 10 10 22 22 10 47 2.0 10 40 (30) R1 R2 Q1 R2 100 100 50 (12) (500) Q2 R2 R1 10 10 22 22 10 47 2.0 10 RN1901FS RN1902FS RN1903FS RN1904FS RN1905FS RN1906FS RN1907FS RN1908FS RN1909FS RN1910FS RN1911FS RN1912FS RN1913FS R1 RN2901FS RN2902FS RN2903FS RN2904FS RN2905FS RN2906FS RN2907FS RN2908FS RN2909FS RN2910FS RN2911FS RN2912FS RN2913FS For the PNP transistors, the minus sign () indicating a negative voltage is omitted. Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 10 R2 Q1 Q2 (mA) 4.7 20 PNP x 2 Q2 R1 R1 (mA) 4.7 Internal Resistors (k) (k) R1 R2 R1 R2 Q2 R2 R1 Absolute Maximum Ratings VCEO IC R2 Q1 Q2 0.8 1.0 2011/9 SCE0004L (mm) NPN PNP Absolute Maximum Ratings VCEO IC Internal Resistors Q1 Q2 R2 R1 Q1 (k) (k) R1 R2 R1 R2 Q2 R1 R2 (V) RN4981FS RN4982FS RN4983FS RN4984FS RN4985FS RN4986FS RN4987FS RN4988FS RN4989FS RN4990FS RN4991FS RN4992FS RN4993FS 50 Q1 R1 Q2 R2 R1 R2 (mA) 50 RN49A6FS 40 (30) NPN PNP 100 100 50 (12) (500) 4.7 4.7 4.7 4.7 10 10 10 10 22 22 22 22 47 47 47 47 2.2 47 2.2 47 4.7 47 4.7 47 10 47 10 47 22 47 22 47 47 22 47 22 4.7 4.7 10 10 22 22 47 47 1 10 1 10 2.2 10 2.2 10 4.7 10 4.7 10 10 4.7 10 4.7 47 10 47 10 2.2 47 22 47 2.2 47 47 47 22 22 10 10 47 47 4.7 47 4.7 4.7 10 10 22 22 10 47 2.0 10 RN49J2AFS The internal connection diagrams only show the general configurations of the circuits. 11 2011/9 SCE0004L (Dual, General-Purpose (6 Pin) ) (Continued) Absolute Maximum Ratings VCEO IC Internal Resistors Q1 ES6 Q2 1.2 1.6 1.6 Classification (mm) NPN x 2 R1 (k) (k) R1 R2 R1 R2 (V) General -purpose 50 PNP x 2 R1 R2 Q1 R1 Q1 PNP NPN PNP x 2 R1 R2 R1 Q1 Q2 R2 NPN x 2 Q2 Q1 R2 R2 Q2 R1 Q1 Q2 R2 R1 R2 R1 R2 R2 R1 NPN PNP R2 R1 R2 Q2 R1 R1 Q1 NPN PNP Q1 Q2 Q2 R1 R2 R2 R2 R1 (mA) 100 4.7 4.7 4.7 4.7 10 10 10 10 22 22 22 22 47 47 47 47 2.2 47 2.2 47 4.7 47 4.7 47 10 47 10 47 22 47 22 47 47 22 47 22 4.7 4.7 10 10 22 22 47 47 1 10 1 10 2.2 10 2.2 10 4.7 10 4.7 10 10 4.7 10 4.7 47 10 47 10 2.2 47 22 47 2.2 47 47 47 22 22 10 10 10 10 10 RN1901FE RN1902FE RN1903FE RN1904FE RN1905FE RN1906FE RN1907FE RN1908FE RN1909FE RN1910FE RN1911FE RN2901FE RN2902FE RN2903FE RN2904FE RN2905FE RN2906FE RN2907FE RN2908FE RN2909FE RN2910FE RN2911FE RN1961FE RN1962FE RN1963FE RN1964FE RN1965FE RN1966FE RN1967FE RN1968FE RN1969FE RN1970FE RN1971FE RN2961FE RN2962FE RN2963FE RN2964FE RN2965FE RN2966FE RN2967FE RN2968FE RN2969FE RN2970FE RN2971FE RN4901FE RN4902FE RN4903FE RN4904FE RN4905FE RN4906FE RN4907FE RN4908FE RN4909FE RN4910FE RN4911FE RN4981FE RN4982FE RN4983FE RN4984FE RN4985FE RN4986FE RN4987FE RN4988FE RN4989FE RN4990FE RN4991FE RN4962FE RN49A1FE For the PNP transistors, the minus sign () indicating a negative voltage is omitted. Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 12 The internal connection diagrams only show the general configurations of the circuits. 2011/9 SCE0004L Absolute Maximum Ratings VCEO IC Internal Resistors Q1 US6 Q2 2.1 1.25 2.0 Classification (mm) NPN x 2 R1 (k) (k) R1 R2 R1 R2 (V) General -purpose 50 PNP x 2 R1 R2 Q1 R1 Q1 PNP NPN PNP x 2 R1 R2 R1 Q1 Q2 R2 NPN x 2 Q2 Q1 R2 R2 Q2 R1 Q1 Q2 R2 R1 R2 R1 R2 R2 R1 NPN PNP R2 Q2 R1 R1 Q1 Q2 R1 R2 R2 (mA) 100 4.7 4.7 4.7 4.7 10 10 10 10 22 22 22 22 47 47 47 47 2.2 47 2.2 47 4.7 47 4.7 47 10 47 10 47 22 47 22 47 47 22 47 22 4.7 4.7 10 10 22 22 47 47 1 10 1 10 2.2 10 2.2 10 4.7 10 4.7 10 10 4.7 10 4.7 47 10 47 10 2.2 47 22 47 2.2 47 47 47 22 22 10 10 10 10 10 RN1901 RN1902 RN1903 RN1904 RN1905 RN1906 RN1907 RN1908 RN1909 RN1910 RN1911 RN2901 RN2902 RN2903 RN2904 RN2905 RN2906 RN2907 RN2908 RN2909 RN2910 RN2911 RN1961 RN1962 RN1963 RN1964 RN1965 RN1966 RN1967 RN1968 RN1969 RN1970 RN1971 RN2961 RN2962 RN2963 RN2964 RN2965 RN2966 RN2967 RN2968 RN2969 RN2970 RN2971 RN4901 RN4902 RN4903 RN4904 RN4905 RN4906 RN4907 RN4908 RN4909 RN4910 RN4911 RN4981 RN4982 RN4983 RN4984 RN4985 RN4986 RN4987 RN4988 RN4989 RN4990 RN4991 RN1973 RN2975 RN49A1 RN49A2 For the PNP transistors, the minus sign () indicating a negative voltage is omitted. The products shown in bold are also manufactured in offshore fabs. Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 13 The internal connection diagrams only show the general configurations of the circuits. 2011/9 SCE0004L (Dual, General-Purpose (6 Pin) ) (Continued) Internal Resistors Q2 2.9 1.6 Q1 SM6 2.8 Absolute Maximum Ratings VCEO IC Classification (mm) NPN x 2 R1 (k) (k) R1 R2 R1 R2 (V) General -purpose 50 PNP x 2 R1 R2 Q1 R2 R1 R1 R2 Q1 Q2 Q1 PNP NPN NPN x 2 R2 R2 Q2 R1 Q1 Q2 R2 R1 R2 R1 Q2 R1 R2 (mA) 100 4.7 4.7 4.7 4.7 10 10 10 10 22 22 22 22 47 47 47 47 2.2 47 2.2 47 4.7 47 4.7 47 10 47 10 47 22 47 22 47 47 22 47 22 4.7 4.7 10 10 22 22 47 47 1 10 1 10 2.2 10 2.2 10 4.7 10 4.7 10 10 4.7 10 4.7 47 10 47 10 2.2 47 22 47 2.2 47 47 47 22 22 10 10 10 10 10 RN1601 RN1602 RN1603 RN1604 RN1605 RN1606 RN1607 RN1608 RN1609 RN1610 RN1611 RN2601 RN2602 RN2603 RN2604 RN2605 RN2606 RN2607 RN2608 RN2609 RN2610 RN2611 RN4601 RN4602 RN4603 RN4604 RN4605 RN4606 RN4607 RN4608 RN4609 RN4610 RN4611 RN4612 RN1673 RN46A1 For the PNP transistors, the minus sign () indicating a negative voltage is omitted. The products shown in bold are also manufactured in offshore fabs. Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 14 The internal connection diagrams only show the general configurations of the circuits. 2011/9 SCE0004L Junction FETs Junction FETs (Surface-Mount Type) Package S-MINI (SC-59) USM (SC-70) 2.9 2.0 2.1 1.25 Yfs(mS) Min IDSS (mA) 1.5 IG (mA) Max 2.5 VGDS (V) Max Classification (mm) Nch General-purpose 50 10 0.3 to 6.5 1.2 50 10 1.2 to 14 1 50 10 1.2 to 14 4 (mm) Pch Nch 2SK208 Pch 2SK879 2SJ106 2SJ144 2SK209 2SK880 The products shown in bold are also manufactured in offshore fabs. Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. (Surface-Mount Type) (Electret Condense Microphone) Package VESM IG (mA) Max Yfs(mS) Min IDSS Rank (A) 1.2 Ciss (pF) Typ. 0.8 VGDS (V) Max 1.2 Characteristics 0.5 (mm) High gain Low THD Low Noise Small Ciss 20 High gain Low THD Small Ciss 20 A 80 to 200 10 0.55 3.6 2SK3582MFV 0.9 3.5 2SK3857MFV 1.35 4.0 2SK4059MFV 0.9 1.8 TTK101MFV * B 170 to 300 10 A 140 to 240 B 210 to 350 A 140 to 240 High gain Small Ciss AK 100 to 250 20 10 B 210 to 350 BK 210 to 400 C 320 to 500 Very Low Noise Small Ciss 20 10 A 140 to 240 B 210 to 350 Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. Junction FETs (Dual) *: New product (Surface-Mount Type) Package SMV USV 2.9 2.0 Yfs(mS) Min Internal Connections Nch x 2 General-purpose 50 10 1.2 to 14 2SK2145 4 Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 15 2.1 IDSS (mA) (mm) Pch x 2 1.25 IG (mA) 1.6 VGDS (V) 2.8 Classification Nch x 2 2SK3320 (mm) Pch x 2 Q1 Q2 The internal connection diagrams only show the general configurations of the circuits. 2011/9 SCE0004L Combination Products of Different Type Devices Combination Products of Different Type Devices (5-Pin Packages (SMV), 6-Pin Packages (ES6, US6, SM6) ) Part Number Ratings US6 Package ES6 Package 1.6 2.0 2.1 1.25 1.2 Component Devices 1.6 Internal Connections (mm) Breakdown Voltage (V) Current (mA) (mm) Q1 2SA1955 VCEO 12 IC 400 Q2 2SK1829 VDS 20 ID 50 Q1 2SA1955 VCEO 12 IC 400 Q2 SSM3K03FE VDS 20 ID 50 Q1 2SA1955 VCEO 12 IC 400 Q2 SSM3K04FU VDS 20 ID 100 Q1 RN2310 VCEO 50 IC 100 Q2 2SK1829 VDS 20 ID 50 Q1 RN2310 VCEO 50 IC 100 Q2 SSM3K03FE VDS 20 ID 50 Q1 RN2101 VCEO 50 IC 100 Q2 2SK1830 VDS 20 ID 50 HN7G01FU PNP Nch Q1 Q2 HN7G01FE PNP (BRT) Nch Q1 HN7G03FU HN7G02FU Q2 R HN7G02FE PNP (BRT) Nch Q1 Q2 R2 Features PNP Low VCE(SAT), suitable for power supply switches 2.5-V gate drive (Vth 1.5 V max), Ron 20 typ. PNP Low VCE(SAT), suitable for power supply switches 2.5-V gate drive (Vth 1.3 V max), Ron 4 typ. PNP Low VCE(SAT), suitable for power supply switches Internal 1-M resistor (RGS) 2.5-V gate drive (Vth 1.3 V max), Ron 4 typ. PNP (Internal resisters), R 4.7 k 2.5-V gate drive (Vth 1.5 V max), Ron 20 typ. PNP (Internal resisters), R 4.7 k 2.5-V gate drive (Vth 1.3 V max), Ron 4 typ. PNP (Internal resisters), R1 4.7 k, R2 4.7 k HN7G05FU R1 The products shown in bold are also manufactured in offshore fabs. Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 16 2.5-V gate drive (Vth 1.5 V max), Ron 20 typ. The internal connection diagrams only show the general configurations of the circuits. 2011/9 SCE0004L Combination Products of Different Type Devices ES6 Package 2.9 (mm) 1.6 2.8 2.8 1.6 Component Devices 1.2 1.6 Ratings SM6 Package 2.9 1.6 Internal Connections (5-Pin Packages (SMV), 6-Pin Packages (ES6, US6, SM6) ) (Continued) Part Number SMV Package Breakdown Voltage (V) (mm) Current (mA) (mm) Q1 RN1104F VCEO 50 IC 100 NPN (Internal resisters), R1 47 k, R2 47 k Q2 SSM3K15FS VDS 30 ID 100 2.5-V gate drive (Vth 1.5 V max), Ron 4 typ.. Q1 2SC5376F VCEO 12 IC 400 NPN Low VCE(SAT), suitable for power supply switches Q2 SSM3K03FE VDS 20 ID 50 2.5-V gate drive (Vth 1.3 V max), Ron 4 typ. Q1 1SS352 VR 80 IO 100 Standard high-speed switching Q2 2SC4666 VCEO 50 IC 150 High-hFE-type NPN Q1 1SS352 VR 80 IO 100 Standard high-speed switching Q2 2SC4116 VCEO 50 IC 150 General-purpose NPN transistor Q1 2SA1587 VCEO 120 IC 100 High breakdown voltage PNP Q2 1SS352 VR 80 IO 100 NPN (BRT) Nch R1 Q1 Q2 HN7G09FE R2 NPN Nch Q1 Q2 HN7G10FE Independent small-signal diode NPN HN2E01F Q1 Q2 HN2E02F Independent PNP small-signal diode Q1 HN2E04F Q2 Independent BRT (PNP) small-signal diode Q1 R1 Features HN2E05J Standard high-speed switching Q1 RN2304 VCEO 50 IC PNP (Internal resisters), 100 R1 47 k, R2 47 k Q2 1SS352 VR 80 IO 100 Q2 R2 Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 17 Standard high-speed switching The internal connection diagrams only show the general configurations of the circuits. 2011/9 SCE0004L MOSFETs Small-Signal MOSFETs (Single-Type) Absolute Maximum Ratings Package VESM USM (SC-70) UFM 2.0 1.6 S-MINI (SC-59) 2.9 2.0 1.5 2.5 1.7 2.1 2.1 1.25 0.8 1.6 0.8 0.38 1.2 VDDS VGSS ID (V) (V) (mA) SSM 1.2 1.0 Polarity CST3 0.6 0.35 (mm) N-ch 20 10 200 20 10 250 20 10 100 20 10 180 20 10 500 20 10 500 30 20 100 30 20 100 30 20 100 30 20 200 30 20 400 50 7 100 60 20 200 60 20 200 60 20 200 20 8 330 20 10 100 20 200 30 20 200 60 (mm) (mm) (mm) * * SSM3K35MFV SSM3K36MFV SSM3K35FS SSM3K36FS SSM3K43FS #* SSM3K15AFS SSM3K44FS * #* SSM3K36TU SSM3K15F SSM3K15ACT 30 7 (mm) SSM3K37FS SSM3K16FU SSM3K35CT 30 50 (mm) * SSM3K37MFV SSM3J16CT 10 100 SSM3J35CT 20 100 SSM3J15CT 20 P-ch SSM3K37CT * SSM3K15AMFV * SSM3K44MFV # * SSM3K15AFU * 2SK2009 SSM3K7002BFS * SSM3J36MFV SSM3J16FV SSM3J35MFV SSM3J15FV SSM3J36FS SSM3J16FS SSM3J35FS SSM3J15FS SSM3K09FU SSM3K17FU SSM3K7002AFU SSM3K7002BFU SSM3J36TU SSM3J16FU SSM3J15FU SSM3J09FU 2SJ344 50 20 200 SSM3K7002AF SSM3K7002BF 2SK1062 * SSM3J15F 2SJ305 2SJ343 2SJ168 #: High ESD protection Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 18 2011/9 SCE0004L * Vth (V) Ron () ton (ns) Typ. toff (ns) Typ. 36 Min Max Typ. Max @VGS (V) 0.35 1.0 3.07 5.6 1.5 18 0.35 1.0 3.07 5.6 1.5 18 36 0.6 1.1 5.2 15 1.5 70 125 0.4 1.0 5 20 1.2 115 300 0.35 1.0 0.95 1.52 1.5 30 75 0.35 1.0 0.95 1.52 1.5 30 75 0.8 1.5 4 7 2.5 50 180 0.8 1.5 3.5 6.0 2.5 5.5 35 0.8 1.5 4.0 7.0 2.5 50 200 0.5 1.5 1.2 2.0 2.5 60 120 1.1 1.8 0.8 1.2 4 72 68 0.9 1.5 22 40 2.5 100 40 1.0 2.5 1.8 3.3 4.5 3 7 1.5 3.1 2.1 3.3 4.5 3.3 14.5 2.0 3.5 0.6 1.0 10 14 75 0.3 1.0 2.23 3.60 1.5 90 200 0.6 1.1 18 45 1.5 130 190 0.4 1.0 11 44 1.2 175 251 1.1 1.7 14 32 2.5 65 175 0.5 1.5 2.4 4.0 2.5 60 150 1.1 1.8 3.3 4.2 4 85 85 0.8 2.5 20 50 4 150 130 2.0 3.5 1.3 2.0 10 14 100 *: New product 19 2011/9 SCE0004L Small-Signal MOSFETs (Dual Type) Absolute Maximum Ratings Package ESV ES6 Ron () Vth (V) USV US6 UF6 2.0 N-ch x2 100 20 10 250 20 10 180 20 10 500 20 10 500 30 20 100 30 20 100 30 20 100 30 20 400 7 100 60 20 200 60 20 200 50 20 10 100 P-ch x2 20 10 100 20 8 330 20 10 SSM6N37FE SSM6N35FE SSM6N36FE 20 10 2.1 1 1.7 2.1 1 SSM6N36TU 1 1 SSM5N15FU 1 SSM6N15AFE SSM6N44FE * 1 SSM6N15AFU SSM6N44FU SSM6N09FU SSM6N17FU SSM6N7002AFU SSM6N7002BFU SSM5P16FU 2 SSM6P16FU SSM6P35FU * SSM3K16FU x 2 0.6 1.1 SSM3K37MFV x 2 0.35 1.0 3.07 5.6 1.5 5 15 20 1.5 SSM3K35MFV x 2 0.4 1.0 SSM3K36TU x 2 0.35 1.0 0.95 1.52 1.5 SSM3K43FS x 2 0.35 1.0 0.95 1.52 1.5 SSM3K15FU x 2 0.8 1.5 4 SSM3K15AMFV x 2 0.8 1.5 3.5 7 1.2 2.5 6.0 2.5 1 SSM3K44FS x 2 0.8 1.5 4.0 7.0 2.5 1 SSM3K09FU x 2 1.1 1.8 0.8 1.2 4 1 SSM3K17FU x 2 0.9 1.5 22 40 2.5 1 SSM3K7002AFU x 2 1.0 2.5 1.8 3.3 4.5 1 * SSM3K7002BF x 2 1.5 3.1 2.1 3.3 4.5 2 SSM3J16FU x 2 0.6 1.1 18 45 1.5 2 SSM3J35FU x 2 0.4 1.0 11 44 1.2 1 * SSM3J09FU x 2 1.1 1.8 3.3 4.2 2 SSM6P09FU SSM5P15FU 2 SSM6P15FU 2 SSM5P15FE 2 SSM6P15FE 2 SSM3J15FU x 2 1.1 1.7 14 32 2.5 SSM6L35FE 3 SSM6L35FU 3 SSM3K35FU SSM3J35FU 0.4 1.0 11 SSM6L36FE 3 * SSM3K36TU SSM3J36TU 0.3 1.0 2.23 3.6 1.5 500 2 2 SSM6P36TU 2 * SSM3J36TU x 2 2 * SSM6L36TU 3 * 400 SSM6L09FU 30 20 200 Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 3 0.3 1.0 2.23 3.6 1.5 0.4 1.0 Number of Pins 1 Q1 2 1.1 1.8 0.8 1.2 4 1.1 1.8 3.3 4.2 4 *: New product Q1 Q2 The internal connection diagrams only show the general configurations of the circuits. 20 1.2 SSM3J09FU 3 Q2 20 4.4 1.2 SSM3K09FU Q2 Q1 5 4 0.35 1.0 0.95 1.52 1.5 Internal Connections 6-pin ES6/US6/UF6 5.2 SSM6N7002BFE SSM5P16FE 2 SSM6P16FE SSM6P35FE SSM6P36FE 180 5-pin ESV/USV GS (V) (mm) * 1 SSM6N43FU 8 330 30 20 (mm) SSM6N37FU SSM6N35FU SSM5N15FE 1 20 10 100 20 (mm) @V Min Max Typ. Max SSM5N16FU 1 30 20 200 30 20 100 N-ch P-ch (mm) SSM5N16FE 1 1.25 2.1 1.2 1.6 1.2 (mm) 20 10 2.0 Internal FETs 1.6 VDDS VGSS ID (V) (V) (mA) 1.6 1.25 Polarity 2.0 1.6 2011/9 SCE0004L VDSS 60 V (Power MOSFETs) Package Polarity (N-ch MOSFETs) VDSS (V) VGSS (V) ID (A) PD (W) VGS 1.5 V SSM4K27CT 20 12 0.5 0.4 SSM6K211FE SSM6K202FE SSM6K204FE SSM6K208FE SSM6K210FE SSM6K30FE SSM6K31FE SSM6N42FE SSM3K123TU SSM3K121TU SSM3K119TU SSM3K116TU SSM3K122TU SSM3K127TU SSM3K131TU SSM3K124TU SSM3K106TU SSM6K403TU SSM6K411TU SSM6K404TU SSM6K405TU SSM6K406TU SSM6K34TU SSM6K407TU SSM6N39TU SSM6N24TU SSM6N40TU 20 10 3.2 0.5 118 30 12 2.3 0.5 20 10 2.0 0.5 307 30 12 1.9 0.5 30 20 1.4 20 20 20 Part Number RDS(ON) Max (m) VGS 1.8 V VGS 2.5 V VGS 4.0 V Ciss (pF) Internal FETs Internal Connections 260 205 174 (4) 82 59 47(@4.5 V) 510 (2) 145 101 85 270 (2) 214 164 126 195 (2) 296 177 133 123 (2) 0.5 371 57 (2) 1.2 0.5 420 60 (2) 20 1.2 0.5 540 36 (2) 20 10 0.8 0.15 600 450 330 240 (@4.5 V) 90 (1) 20 10 4.2 0.5 66 43 32 28 1010 (3) 20 10 3.2 0.5 140 93 63 48 400 (3) 30 12 2.5 0.5 134 90 74 270 (3) 30 12 2.2 0.5 135 100 (@4.5 V) 245 (3) 20 10 2.0 0.5 304 211 161 123 195 (3) 30 12 2.0 0.5 286 167 123 123 (3) 30 20 6.0 0.5 41.5 (@4.5 V) 450 (3) 30 20 2.4 0.5 120 180 (3) 20 20 1.2 0.5 530 36 (3) 20 10 4.2 0.5 66 43 32 28 1050 (2) 20 12 10 0.5 23.8 12(@4.5 V) 710 (2) 20 10 3.0 0.5 147 100 70 55 400 (2) 20 10 2.0 0.5 307 214 164 126 195 (2) 30 20 4.4 0.5 38.5 (@4.5 V) 490 (2) 30 20 3.0 0.5 77 (@4.5 V) 470 (2) 60 20 2.0 0.5 440 150 (2) 20 10 1.6 0.5 247 190 139 119 260 (1) 30 12 0.5 0.5 180 145 (@4.5 V) 245 SSM6K24FE x 2 (1) 30 20 1.6 0.5 182 180 (1) CST4 N-ch 390 (mm) 1.6 ES6 N-ch 1.6 0.55 (mm) N-ch x 2 2.1 UFM N-ch 2.0 0.7 (mm) UF6 2.1 N-ch 2.0 0.7 (mm) N-ch x 2 * * #: High ESD protection Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product Internal Connections (1) (2) (3) (4) Q1 Q2 Note: Some MOSFETs do not have a Zener diode between gate and source. The internal connection diagrams only show the general configurations of the circuits. 21 2011/9 SCE0004L VDSS 60 V (Power MOSFETs) Package Polarity (N-ch MOSFETs) (Continued) VDSS VGSS ID (A) PD (W) VGS (V) (V) 1.5 V Part Number RDS(ON) Max (m) VGS 1.8 V VGS 2.0 V VGS 2.5 V VGS 4V VGS 4.5 V VGS 10 V Ciss (pF) Qg (nC) Internal (typ.) Connections UDFN6B N-ch SSM6K504NU ** 30 20 9 2 30 650 650 5 (1) N-ch x 2 SSM6N55NU ** 30 20 4 2 64 43 270 2.5 (2) SSM3K310T 20 10 5.0 0.7 66 43 32 28 1120 14.8 (3) SSM3K309T 20 12 4.7 0.7 47 35 31 1020 (3) SSM3K301T 20 12 3.5 0.7 110 74 56 320 4.8 (3) SSM3K316T 30 12 4.0 1.25 131 87 65 53 270 4.3 (3) SSM3K320T 30 20 4.2 1.4 77 50 190 4.6 (3) (mm) UDFN6 (mm) 2.8 TSM N-ch 2.9 0.7 (mm) 2.4 SOT-23F N-ch 2.9 SSM3K318T * 60 20 2.5 0.7 145 107 235 7 (3) SSM3K329R * 30 12 3.5 2 289 170 126 123 (3) SSM3K333R * 30 20 6 2 42 28 436 (3) SSM3K335R * 30 20 6 2 57 35 340 2.6 (3) SSM3K336R ** 30 20 4 2 140 110 110 1 (3) 0.8 (mm) Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product **: Under development Internal Connections (1) (2) (3) Note: Some MOSFETs do not have a Zener diode between gate and source. The internal connection diagrams only show the general configurations of the circuits. 22 2011/9 SCE0004L Package Polarity Chip LGA N-ch Dual (mm) VS-8 RDS(ON) Max (m) Qg (nC) Internal (typ.) Connections VDSS (V) VGSS (V) ID (A) PD (W) TPCL4201 20 12 6 1.65 52 33 31 11.5 (1) TPCL4203 24 12 6 1.65 55 38 36 10 (1) TPCL4202 30 12 6 1.65 64 42 40 10 (1) TPCF8003 20 12 7 2.5 34 18 9.5 (2) TPCF8002 30 20 7 2.5 32 21 11.5 (2) TPCF8201 20 12 3 1.35 100 66 49 7.5 (3) TPC6012 TPC6008-H TPC6011 TPC6009-H TPC6010-H TPCP8006 TPCP8008-H TPCP8004 TPCP8005-H TPCP8007-H TPCP8204 TPCP8205-H TPCP8203 TPCC8007 TPCC8061-H TPCC8067-H TPCC8066-H TPCC8003-H TPCC8065-H TPCC8064-H TPCC8074 TPCC8006-H TPCC8009 TPCC8005-H TPCC8062-H TPCC8073 TPCC8008 TPCC8084 TPCC8076 20 12 6 2.2 38 20 9 (4) 30 20 5.9 2.2 74 60 4.8 (4) 30 20 6 2.2 32 20 14 (4) 40 20 5.3 2.2 98 81 4.7 (4) 60 20 6.1 2.2 63 59 12 (4) 20 12 9.1 1.68 13.7 10 22 (5) 30 20 8 1.68 23 20 14.7 (5) 30 20 8.3 1.68 14 8.5 26 (5) 30 20 11 1.68 15.7 12.9 20 (5) 60 20 5 1.68 64 57 11 (5) 30 20 4.2 1.48 77 50 4.6 (3) 30 20 6.5 1.48 29 26 13.8 (3) 40 20 4.7 1.48 60 40 16 (3) 20 12 27 30 8.7 4.6 26 (5) 30 20 8 15 29 26 11 (5) 30 20 9 15 33 25 9.5 (5) 30 20 11 17 19 15 15 (5) 30 20 13 22 19.3 16.9 17 (5) 30 20 13 18 14.5 11.4 20 (5) 30 20 19 30 10.6 8.2 23 (5) 30 20 20 30 8.5 6.3 25 (5) 30 20 22 27 9.3 8 27 (5) 30 20 24 27 7 26 (5) 30 20 26 30 7.4 6.4 35 (5) 30 20 27 39 7.1 5.6 34 (5) 30 20 27 39 5.9 4.5 37 (5) 30 25 25 30 13 6.8 30 (5) 33 20 21 32 9 6.7 27 (5) 33 20 27 39 6.2 4.6 34 (5) Part Number VGS 2.0 V VGS 2.5 V VGS 4 V VGS 4.5 V VGS 10 V N-ch Single (mm) N-ch Dual VS-6 N-ch Single (mm) PS-8 N-ch Single (mm) N-ch Dual TSON Advance N-ch Single (mm) Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. Internal Connections (1) (2) 4 3 1 2 (3) (4) 8 7 6 5 8 7 6 5 1 2 3 4 1 2 3 4 (5) 6 5 4 1 2 3 8 7 6 5 1 2 3 4 Note: Some MOSFETs do not have a Zener diode between gate and source. The internal connection diagrams only show the general configurations of the circuits. 23 2011/9 SCE0004L VDSS 60 V (Power MOSFETs) Package Polarity (N-ch MOSFETs) (Continued) Part Number TPC8061-H TPC8067-H TPC8066-H TPC8037-H TPC8038-H TPC8065-H TPC8040-H TPC8032-H TPC8064-H TPC8063-H TPC8039-H TPC8033-H TPC8062-H TPC8036-H TPC8059-H TPC8060-H TPC8034-H TPC8058-H TPC8035-H TPC8057-H TPC8056-H TPC8055-H TPC8041 TPC8092 N-ch Single TPC8074 TPC8086 TPC8073 (mm) TPC8085 TPC8028 TPC8082 TPC8029 TPC8042 TPC8081 TPC8080 TPC8027 TPC8088 TPC8087 TPC8084 TPC8076 TPC8075 TPC8078 TPC8052-H TPC8047-H TPC8046-H TPC8045-H TPC8053-H TPC8050-H TPC8049-H TPC8048-H SOP-8 VDSS (V) VGSS (V) ID (A) PD (W) RDS(ON) Max (m) VGS 2.0 V VGS 2.5 V VGS 4 V VGS 4.5 V VGS 10 V Qg (nC) Internal (typ.) Connections 30 20 8 1.9 29 26 11 (1) 30 20 9 1.9 33 25 9.5 (1) 30 20 11 1.9 19 16 15 (1) 30 20 12 1.9 13.9 11.4 21 (1) 30 20 12 1.9 13.9 11.4 21 (1) 30 20 13 1.9 14.7 11.6 20 (1) 30 20 13 1.9 11.1 9.7 24 (1) 30 20 15 1.9 8.6 6.5 33 (1) 30 20 16 1.9 10.8 8.4 23 (1) 30 20 17 1.9 8.9 7 27 (1) 30 20 17 1.9 6.9 6 36 (1) 30 20 17 1.9 7.2 5.3 42 (1) 30 20 18 1.9 7.3 5.8 34 (1) 30 20 18 1.9 5.1 4.5 49 (1) 30 20 18 1.9 5 4 41 (1) 30 20 18 1.9 4.2 3.7 65 (1) 30 20 18 1.9 4.5 3.5 68 (1) 30 20 18 1.9 4 3.2 51 (1) 30 20 18 1.9 3.6 3.2 82 (1) 30 20 18 1.9 3.4 2.8 61 (1) 30 20 18 1.9 2.9 2.4 74 (1) 30 20 18 1.9 2.5 2.1 91 (1) 30 20 13 1.9 13.5 7 27 (1) 30 20 15 1.9 11.1 9 25 (1) 30 20 17 1.9 8.7 6.5 25 (1) 30 20 17 1.9 8.5 6.4 26 (1) 30 20 18 1.9 6.1 4.7 37 (1) 30 20 18 1.9 6.1 4.7 37 (1) 30 20 18 1.9 8 4.3 45 (1) 30 20 18 1.9 5 4 41 (1) 30 20 18 1.9 7 3.8 49 (1) 30 20 18 1.9 6.5 3.4 56 (1) 30 20 18 1.9 4 3.2 51 (1) 30 20 18 1.9 3.4 2.8 61 (1) 30 20 18 1.9 5.5 2.7 113 (1) 30 20 18 1.9 2.9 2.4 74 (1) 30 20 18 1.9 2.5 2.1 91 (1) 33 20 17 1.9 9.2 6.9 27 (1) 33 20 18 1.9 6.5 4.9 34 (1) 33 20 18 1.9 3.3 2.6 70 (1) 33 20 18 1.9 2.8 2.2 90 (1) 40 20 12 1.9 13.3 11.5 25 (1) 40 20 16 1.9 8.8 7.6 43 (1) 40 20 18 1.9 6.6 5.7 57 (1) 40 20 18 1.9 4.4 3.9 90 (1) 60 20 9 1.9 24.2 22.5 25 (1) 60 20 11 1.9 15.6 14.5 41 (1) 60 20 13 1.9 11.5 10.7 56 (1) 60 20 16 1.9 7.4 6.9 87 (1) Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. Internal Connections (1) 8 7 6 5 1 2 3 4 Note: Some MOSFETs do not have a Zener diode between gate and source. The internal connection diagrams only show the general configurations of the circuits. 24 2011/9 SCE0004L Package Polarity Part Number SOP-8 N-ch Dual (mm) SOP Advance N-ch Single (mm) PW-Mini VDSS (V) VGSS (V) ID (A) PD (W) RDS(ON) Max (m) VGS 2.0 V VGS 2.5 V VGS 4 V VGS 4.5 V VGS 10 V Qg (nC) Internal (typ.) Connections TPC8221-H 30 20 6 1.5 29 25 12 (1) TPC8224-H 30 20 8 1.6 34 26 9.5 (1) TPC8223-H 30 20 9 1.5 21 17 17 (1) TPCA8011-H TPCA8063-H TPCA8040-H TPCA8065-H TPCA8030-H TPCA8031-H TPCA8064-H TPCA8062-H TPCA8059-H TPCA8039-H TPCA8058-H TPCA8036-H TPCA8057-H TPCA8060-H TPCA8056-H TPCA8028-H TPCA8055-H TPCA8082 TPCA8024 TPCA8081 TPCA8025 TPCA8080 TPCA8026 TPCA8042 TPCA8088 TPCA8087 TPCA8052-H TPCA8047-H TPCA8046-H TPCA8045-H TPCA8053-H TPCA8050-H TPCA8049-H 20 12 40 45 7.5 3.5 32 (2) 30 20 22 35 8.7 6.8 27 (2) 30 20 23 30 10.8 9.4 23 (2) 30 20 16 25 14.5 11.4 20 (2) 30 20 24 30 13.4 11 21 (2) 30 20 24 30 13.4 11 21 (2) 30 20 20 32 10.6 8.2 23 (2) 30 20 28 42 7.1 5.6 34 (2) 30 20 32 45 4.8 3.8 41 (2) 30 20 34 45 6.6 5.7 36 (2) 30 20 38 52 3.8 3 51 (2) 30 20 38 45 4.8 4.2 50 (2) 30 20 42 57 3.2 2.6 61 (2) 30 20 45 45 3.9 3.4 66 (2) 30 20 48 63 2.7 2.2 74 (2) 30 20 50 45 3.2 2.8 88 (2) 30 20 56 70 2.3 1.9 91 (2) 30 20 32 45 4.8 3.8 41 (2) 30 20 35 45 7.8 4.3 45 (2) 30 20 38 52 3.8 3 51 (2) 30 20 40 45 6 3.5 49 (2) 30 20 42 57 3.2 2.6 61 (2) 30 20 45 45 4.5 2.2 113 (2) 30 20 45 45 5.7 3.3 56 (2) 30 20 48 63 2.7 2.2 74 (2) 30 20 56 70 2.3 1.9 91 (2) 40 20 20 30 13.1 11.3 25 (2) 40 20 32 45 8.5 7.3 43 (2) 40 20 38 45 6.3 5.4 55 (2) 40 20 46 45 4.1 3.6 90 (2) 60 20 15 30 24 22.3 25 (2) 60 20 24 45 15.3 14.2 41 (2) 60 20 28 45 11.2 10.4 55 (2) 2SK2615 60 2 1.5 440 300 6 2SK3658 60 2 1.5 440 300 5 2SK2989 50 5 0.9 330 150 6.5 2SK2961 60 2 0.9 380 270 5.8 N-ch Single (mm) LSTM N-ch Single (mm) Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. Internal Connections (1) (2) 8 7 6 5 8 7 6 5 1 2 3 4 1 2 3 4 Note: Some MOSFETs do not have a Zener diode between gate and source. The internal connection diagrams only show the general configurations of the circuits. 25 2011/9 SCE0004L VDSS 60 V (Power MOSFETs) Package Polarity New PW-Mold (N-ch MOSFETs) (Continued) RDS(ON) Max (m) Qg (nC) Internal (typ.) Connections VDSS (V) VGSS (V) ID (A) PD (W) VGS 2.0 V VGS 2.5 V VGS 4V VGS 4.5 V VGS 6V VGS 10 V 2SK2493 16 5 20 120 100 23 2SK4033 60 5 20 150 100 15 2SK4017 60 5 20 150 100 15 TK40P03M1 30 20 40 40 14.4 10.8 9.4 TK45P03M1 30 20 45 39 12 9.7 13 TK50P03M1 30 20 50 60 9.8 7.5 13.3 TK60P03M1 30 20 60 63 7.8 6.4 21 TK20P04M1 40 20 20 27 34 29 7.6 TK40P04M1 40 20 40 60 13.4 11 15 TK50P04M1 40 20 50 60 10.2 8.7 20 TK10S04K3L 40 20 10 25 54 28 10 TK20S04K3L 40 20 20 38 26 14 18 TK35S04K3L 40 20 35 58 15 10.3 28 TK65S04K3L 40 20 65 88 7.9 4.5 63 TK80S04K3L 40 20 80 100 4.8 3.1 87 TK8S06K3L 60 20 8 25 80 54 10 TK20S06K3L 60 20 20 38 40 29 18 TK30S06K3L 60 20 30 58 30 18 28 TK60S06K3L 60 20 60 88 12.3 8 60 TK80S06K3L 60 20 80 100 7.8 5.5 85 TK70X04K3 40 20 70 80 5.6 62 TK70X04K3Z 40 20 70 80 5.6 62 TK80X04K3 40 20 80 125 3.5 100 TK80X04K3L 40 20 80 125 4.2 3.5 105 TK70X06K3 60 20 70 80 8 62 2SK3842 60 20 75 125 5.8 196 2SK4034 60 20 75 125 10 5.8 196 TK100F04K3 40 20 100 200 3 102 TK100F04K3L 40 20 100 200 4.5 3 105 TK150F04K3 40 20 150 300 2.1 166 TK150F04K3L 40 20 150 300 3.2 2.1 190 TK100F06K3 60 20 100 200 5 98 TK130F06K3 60 20 130 300 3.4 170 Part Number N-ch Single (mm) New PW-Mold2 N-ch Single (mm) DPAK N-ch Single (mm) DPAK+ N-ch Single (mm) TFP N-ch Single (mm) TO-220 SM(W) N-ch Single (mm) Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 26 2011/9 SCE0004L Package Polarity TO-220SIS N-ch Single (mm) Part Number RDS(ON) Max (m) Qg (nC) Internal (typ.) Connections VDSS (V) ID (A) PD (W) TK50A04K3 40 50 42 3.5 102 TK30A06J3A 60 30 25 35 26 36 TK75A06K3 60 75 35 5.5 85 TK25E06K3 60 25 64 18 29 TK50E06K3A 60 50 104 8.5 54 TK80E06K3A 60 80 125 5.8 90 TK70J04K3Z 40 70 125 3.9 100 TK75J04K3Z 40 75 150 3.0 190 TK70J06K3 60 70 125 6 98 2SK2267 60 60 150 15 11 170 VGS 2.0 V VGS 2.5 V VGS 4 V VGS 4.5 V VGS 10 V TO-220 N-ch Single (mm) TO-3P(N) N-ch Single (mm) TO-3P(L) N-ch Single (mm) Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 27 2011/9 SCE0004L 60 V VDSS 300 V (Power MOSFETs) Package Polarity Part Number (N-ch MOSFETs) VDSS (V) VGSS (V) ID (A) PD (W) RDS(ON) Max (m) VGS VGS VGS VGS VGS 1.8 V 2.0 V 2.5 V 4 V 4.5 V VGS 7V VGS 10 V Qg (nC) Internal (typ.) Connections PS-8 N-ch Single TPCP8003-H 100 20 2.2 1.68 190 180 7.5 (1) TPC8051-H 80 20 13 1.9 10.1 9.7 85 (1) TPC8012-H 200 20 1.8 1.9 400 11 (1) TPCA8070-H TPCA8051-H TPCA8006-H TPCA8009-H TPCA8010-H 80 25 12 45 35 21 (1) 80 20 28 45 9.8 9.4 91 (1) 100 20 18 45 67 12 (1) 150 20 7 45 350 10 (1) 200 20 5.5 45 450 10 (1) TPCA8008-H 250 20 4 45 580 10 (1) 2SK2963 100 1 1.5 950 700 6.3 2SK2992 200 1 1.5 3500 3 2SK2962 100 1 0.9 950 700 6.3 2SK3670 150 0.67 0.9 1700 4.6 (mm) SOP-8 N-ch Single (mm) SOP Advance N-ch Single (mm) PW-Mini N-ch Single (mm) LSTM N-ch Single (mm) Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. Internal Connections (1) 8 7 6 5 1 2 3 4 Note: Some MOSFETs do not have a Zener diode between gate and source. The internal connection diagrams only show the general configurations of the circuits. 28 2011/9 SCE0004L Package Polarity New PW-Mold N-ch Single (mm) New PW-Mold2 N-ch Single (mm) DPAK Part Number VDSS (V) ID (A) PD (W) VGS 1.8 V VGS 2.0 V RDS(ON) Max (m) VGS VGS VGS 2.5 V 4V 4.5 V VGS 7V VGS 10 V Qg (nC) Internal (typ.) Connections 2SK2201 2SK2399 2SK3669 2SK3205 2SK2162 2SK2920 2SK3462 2SK3342 100 3 20 450 350 100 5 20 300 230 22 100 10 20 125 8.0 150 5 20 750 500 12 180 1 20 5000 200 5 20 800 10 250 3 20 1700 12 250 4.5 20 1000 10 2SK4018 100 3 20 450 350 13.5 2SK4019 100 5 20 300 230 22 2SK4020 200 5 20 800 10 2SK4022 250 3 20 1700 12 2SK4021 250 4.5 20 1000 10 TK8P25DA 250 7.5 55 500 16 TK13P25D 250 13 96 250 25 TK40X10J1 100 40 125 20 59 TK50X15J1 150 50 125 30 75 2SK3444 200 25 125 82 44 2SK3388 250 20 125 105 100 2SK3445 250 20 125 105 45 TK40F08K3 75 40 107 8.5 80 TK80F08K3 75 80 300 4.3 175 TK50F15J1 150 50 300 30 75 13.5 N-ch Single (mm) TFP N-ch Single (mm) TO-220SM(W) N-ch Single (mm) Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 29 2011/9 SCE0004L 60 V VDSS 300 V (Power MOSFETs) Package Polarity TO-220SIS N-ch Single (mm) Part Number (N-ch MOSFETs) (Continued) VDSS (V) VGSS (V) ID (A) PD (W) VGS 1.8 V VGS 2.0 V RDS(ON) Max (m) VGS VGS VGS 2.5 V 4V 4.5 V VGS 7V VGS 10 V Qg (nC) Internal (typ.) Connections TK40A08K3 75 20 40 42 9 80 TK60A08J1 75 20 60 45 9.3 7.8 86 TK80A08K3 75 20 80 40 4.5 175 TK8A10K3 100 20 8 18 120 12.9 TK12A10K3 100 20 12 20 80 18 TK25A10K3 100 20 25 25 40 34 TK40A10J1 100 20 40 40 17 15 76 TK40A10K3 100 20 40 40 15 85 TK55A10J1 100 20 55 45 12 10.5 110 TK9A20DA 200 20 8.5 30 400 14 TK15A20D 200 20 15 35 180 26 TK8A25DA 250 20 7.5 30 500 16 TK13A25D 250 20 13 35 250 25 TK20A25D 250 20 20 45 100 55 TK50E08K3 75 20 50 104 12 55 TK60E08K3 75 20 60 128 9 75 TK18E10K3 100 20 18 71 42 33 TK40E10K3 100 20 40 147 15 84 TK13E25D 250 20 13 102 250 25 2SK3940 75 70 150 7 200 2SK3497 180 10 130 150 36 TK40J20D 200 20 40 260 44 100 TK70J20D 200 20 70 410 30 160 TK30J25D 250 20 30 260 60 100 TK60J25D 250 20 60 410 38 160 TK50J30D 300 20 50 410 52 160 2SK2995 250 30 90 68 132 TO-220 N-ch Single (mm) TO-3P(N) N-ch Single (mm) TO-3P(N)IS N-ch Single (mm) Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 30 2011/9 SCE0004L 300 V VDSS 700 V (Power MOSFETs) Package Polarity Part Number (N-ch MOSFETs) VDSS (V) ID (A) PD (W) RDS(ON) Max () VGS 10 V Qg (nC) Internal (typ.) Connections PW-Mini N-ch Single 2SK3471 500 0.5 1.5 18 3.8 N-ch Single 2SK2998 500 0.5 0.9 18 3.8 N-ch Single 2SK3373 500 2 20 3.2 9 N-ch Single TK2P60D 600 2 60 4.3 7 2SK4023 450 1 20 4.6 5 2SK4026 600 1 20 9.0 9 TK2Q60D 600 2 60 4.3 7 2SK4003 600 3 20 2.2 15 TK3P50D 500 3 60 3.0 7 TK4P50D 500 4 80 2.0 9 TK5P50D 500 5 80 1.5 11 TK7P50D 500 7 100 1.22 12 TK5P53D 525 5 80 1.5 11 TK6P53D 525 6 100 1.3 12 TK4P55DA 550 3.5 80 2.45 9 TK4P55D 550 4 80 1.88 11 TK4P60DA 600 3.5 80 1.7 11 TK4P60DB 600 3.7 80 2.0 11 (mm) LSTM (mm) PW-Mold (mm) New PW-Mold (mm) New PW-Mold2 N-ch Single (mm) DPAK N-ch Single (mm) Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 31 2011/9 SCE0004L 300 V VDSS 700 V (Power MOSFETs) Package Polarity TFP N-ch Single (mm) Part Number (N-ch MOSFETs) (Continued) RDS(ON) Max () Qg (nC) Internal (typ.) Connections VDSS (V) ID (A) PD (W) TK10X40D 2SK3544 2SK3466 2SK3538 TK12X53D 2SK3438 TK12X60U TK15X60U TK20X60U 400 10 125 0.55 20 450 13 100 0.4 34 500 5 50 1.5 17 500 8 65 0.85 30 525 12 150 0.58 25 600 10 80 1.0 28 600 12 100 0.4 14 600 15 125 0.3 17 600 20 150 0.19 27 TK12E60U 600 12 144 0.4 14 TK15E60U 600 15 170 0.3 17 TK20E60U 600 20 190 0.19 27 VGS 10 V TO-220 N-ch Single (mm) Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 32 2011/9 SCE0004L Package Polarity TO-220SIS N-ch Single (mm) Part Number 2SK3757 2SK3766 TK5A45DA TK6A45DA TK7A45DA TK8A45DA TK8A45D TK9A45D TK11A45D TK12A45D TK13A45D TK14A45DA TK14A45D TK16A45D TK19A45D TK4A50D TK5A50D TK6A50D TK7A50D TK8A50DA TK8A50D TK10A50D TK11A50D TK12A50D TK13A50DA TK13A50D TK15A50D TK18A50D TK4A53D TK5A53D TK6A53D TK12A53D TK4A55DA TK4A55D TK5A55D TK6A55DA TK7A55D TK8A55DA TK9A55DA TK10A55D TK11A55D TK12A55D TK13A55DA TK14A55D TK16A55D TK3A60DA TK4A60DA TK4A60DB VDSS (V) ID (A) PD (W) RDS(ON) Max () VGS 10 V 450 2 30 2.45 450 2 30 2.45 8 450 4.5 30 1.75 9 450 5.5 35 1.35 11 450 6.5 35 1.2 11 450 7.5 35 1.1 12 450 8 35 0.9 16 450 9 40 0.77 16 450 11 40 0.62 20 450 12 45 0.52 24 450 13 45 0.46 25 450 13.5 45 0.41 28 450 14 45 0.34 38 450 16 50 0.27 40 450 19 50 0.25 45 500 4 30 2.0 9 500 5 35 1.5 11 500 6 35 1.4 11 500 7 35 1.22 12 500 7.5 35 1.04 16 500 8 40 0.85 16 500 10 45 0.72 20 500 11 45 0.6 38 500 12 45 0.52 25 500 12.5 45 0.47 28 500 13 45 0.4 32 500 15 50 0.3 40 500 18 50 0.27 45 525 4 35 1.7 11 525 5 35 1.5 11 525 6 35 1.3 12 525 12 45 0.58 25 550 3.5 30 2.45 9 550 4 35 1.88 11 550 5 35 1.7 11 550 5.5 35 1.48 12 550 7 35 1.25 16 550 7.5 40 1.07 16 550 8.5 40 0.86 20 550 10 45 0.72 24 550 11 45 0.63 25 550 12 45 0.57 28 550 12.5 45 0.48 38 550 14 50 0.37 40 550 16 50 0.33 45 600 2.5 30 2.8 9 600 3.5 35 2.2 11 600 3.7 35 2 11 Qg (nC) Internal (typ.) Connections 9 Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 33 2011/9 SCE0004L 300 V VDSS 700 V (Power MOSFETs) Package Polarity TO-220SIS N-ch Single (mm) TO-3P(N) N-ch Single (mm) TO-3P(N)IS Part Number (N-ch MOSFETs) (Continued) RDS(ON) Max () Qg (nC) Internal (typ.) Connections VDSS (V) ID (A) PD (W) TK4A60D TK5A60D TK6A60D TK8A60DA TK9A60D TK10A60D TK11A60D TK12A60D TK12A60U TK13A60D TK15A60D TK15A60U TK18A60V TK20A60U TK2A65D TK3A65DA TK3A65D TK4A65DA TK5A65DA TK5A65D TK6A65D TK7A65D TK8A65D TK11A65D TK12A65D TK13A65D TK13A65U TK17A65U 2SK2601 TK15J50D TK20J50D TK12J55D TK16J55D TK19J55D 2SK2602 2SK2699 TK12J60U TK15J60U TK20J60U TK40J60U TK50J60U TK13J65U TK17J65U 600 4 35 1.7 12 600 5 35 1.43 16 VGS 10 V 600 6 40 1.25 16 600 7.5 45 1.0 20 600 9 45 0.83 24 600 10 45 0.75 25 600 11 45 0.65 28 600 12 45 0.55 38 600 12 35 0.4 14 600 13 40 0.43 40 600 15 50 0.37 45 600 15 40 0.3 17 600 18 40 0.19 39 600 20 45 0.19 27 650 2 30 3.26 9 650 2.5 35 2.51 11 650 3 35 2.25 11 650 3.5 35 1.9 12 650 4.5 35 1.67 16 650 5 40 1.43 16 650 6 45 1.11 20 650 7 45 0.98 24 650 8 45 0.84 25 650 11 45 0.7 38 650 12 50 0.54 40 650 13 50 0.47 45 650 13 40 0.38 17 650 17 45 0.26 27 500 10 125 1.0 30 500 15 210 0.4 32 500 20 280 0.27 45 550 12 190 0.57 28 550 16 250 0.37 40 550 19 280 0.33 45 600 6 125 1.25 30 600 12 150 0.65 58 600 12 144 0.4 14 600 15 170 0.3 17 600 20 190 0.19 27 600 40 320 0.08 55 600 50 400 0.065 67 650 13 170 0.38 17 650 17 190 0.26 27 2SK2917 500 18 90 0.27 80 2SK2953 600 15 90 0.4 80 TK40M60U 600 40 90 0.08 55 2SK3453 700 10 80 1.0 53 N-ch Single (mm) Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 34 2011/9 SCE0004L 700 V VDSS (Power MOSFETs) Package Polarity (N-ch MOSFETs) Part Number VDSS (V) ID (A) PD (W) RDS(ON) Max () VGS 10 V Qg (nC) Internal (typ.) Connections New PW-Mold N-ch Single TK1P90A 900 1 20 9.0 13 N-ch Single TK1Q90A 900 1 20 9.0 13 2SK4013 2SK3566 2SK3564 2SK3798 2SK3565 2SK3742 2SK4014 2SK3799 2SK3633 2SK2607 2SK2719 2SK3700 2SK4115 2SK3473 2SK3878 2SK2968 2SK4207 2SK1359 2SK2613 800 6 45 1.7 45 900 2.5 40 6.4 12 900 3 40 4.3 17 900 4 40 3.5 26 900 5 45 2.5 28 900 5 45 2.5 25 900 6 45 2.0 45 900 8 50 1.3 62 800 7 150 1.7 35 800 9 150 1.2 68 900 3 125 4.3 25 900 5 150 2.5 28 900 7 150 2.0 45 900 9 150 1.6 38 900 9 150 1.3 62 900 10 150 1.25 70 900 13 150 0.95 45 1000 5 125 3.8 60 (mm) New PW-Mold2 (mm) TO-220SIS N-ch Single (mm) TO-3P(N) N-ch Single (mm) TO-3P(N)IS N-ch Single (mm) 1000 8 150 1.7 65 2SK3880 800 6.5 80 1.7 35 2SK2606 800 8 85 1.2 68 2SK2847 900 8 85 1.4 58 2SK3017 900 8.5 90 1.25 70 2SK1365 1000 7 90 1.8 120 2SK1489 1000 12 200 1.0 110 TO-3P(L) N-ch Single (mm) Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 35 2011/9 SCE0004L |VDSS| 250 V (Power MOSFETs) Package Polarity (P-ch MOSFETs) Part Number VDSS VGSS (V) (V) ID (A) VGS 1.2 V VGS 1.5 V RDS(ON) Max (m) VGS VGS 1.8 V 2.5 V VGS 4.0 V VGS 4.5 V Ciss (pF) Internal FET Internal Connections CST3B Pch SSM3J46CTB * 20 8 2 250 178 133 103 290 (4) Pch SSM3J56MFV * 20 8 0.8 4000 900 660 480 390 100 (3) SSM6J212FE * 20 8 4.0 94 65.4 49 40.7 970 (2) SSM6J215FE * 20 8 3.4 154 104 79 59 630 (2) 560 (2) 103 290 (2) (mm) VESM 0.8 1.2 1.2 0.5 (mm) ES6 SSM6J214FE * 1.6 Pch 1.6 0.55 (mm) Pch Pch 2.1 UFM Pch 2.0 0.7 (mm) UF6 2.1 Pch 2.0 0.7 (mm) Pch x 2 30 12 SSM6J213FE * 20 8 SSM6J207FE 30 20 SSM6P41FE SSM3J132TU SSM3J130TU SSM3J129TU SSM3J113TU SSM3J133TU SSM3J134TU SSM3J135TU SSM3J117TU SSM3J118TU SSM3J112TU SSM6J409TU SSM6J412TU SSM6J50TU SSM6J401TU SSM6J402TU SSM6J410TU SSM6P54TU SSM6P39TU SSM6P25TU SSM6P40TU * * * * * * * * * * 3.6 149.6 77.6 57 2.6 20 1.4 8 0.72 1040 12 6 5.4 94 39 20 8 4.4 63.2 20 8 4.6 137 88 62 46 640 (3) 20 12 1.7 449 (@2.0 V) 249 169 370 (3) 20 8 5.5 88.4 56.0 39.7 29.8 840 (3) 20 8 3.2 240 168 123 93 290 (3) 20 8 3.0 260 180 132 103 270 (3) 30 20 2.0 225 280 (3) 30 20 1.4 480 137 (3) 30 20 1.1 790 86 (3) 20 8 9.5 72.3 46.3 30.2 22.1 1100 (2) 20 8 4.0 99.6 67.8 51.4 42.7 840 (2) 20 10 2.5 205 (@2.0 V) 100 64 800 (2) 30 20 2.5 145 730 (2) 30 20 2.0 225 280 (2) 30 20 2.1 393 120 (2) 20 8 1.2 555 350 228 331 (1) 20 8 1.5 430 294 213 250 (1) 20 12 0.5 430 260 218 SSM6J25FE x 2 (1) 30 20 1.4 403 120 (1) 250 133 491 137 (2) 670 440 300 110 (1) 29 21 17 2700 (3) 41.1 31.0 25.8 1800 (3) 178 Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product Internal Connections (1) (2) (3) (4) Q1 Q2 The internal connection diagrams only show the general configurations of the circuits. 36 2011/9 SCE0004L Package Polarity UDFN6 VDSS VGSS (V) (V) Part Number ID (A) VGS 1.2 V VGS 1.5 V RDS(ON) Max (m) VGS VGS 1.8 V 2.5 V VGS 4.5 V Ciss (pF) Internal FET Internal Connections SSM6P47NU * 20 8 4 242 170 125 95 290 (3) SSM6P49NU * 20 12 4 157 76 56 480 (3) SSM6J505NU ** 12 6 10 70 23 20 15 10 3000 (2) SSM6J501NU * 20 8 10 43 26.5 19 15.3 2600 (2) SSM6J502NU * 20 8 6 60.5 38.4 28.3 23.1 1800 (2) SSM6J503NU * 20 8 6 89.6 57.9 41.7 32.4 840 (2) Pch x 2 (mm) UDFN6B Pch (mm) Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product **: Under development Internal Connections (1) (2) (3) The internal connection diagrams only show the general configurations of the circuits. 37 2011/9 SCE0004L |VDSS| 250 V (Power MOSFETs) Package 2.8 2.9 Qg Internal (nC) Connections (typ.) VGSS (V) ID (A) PD (W) 30 12 5.6 1.25 115 62.5 45.7 650 9.3 (6) SSM3J314T 30 20 3.5 0.7 100 505 11.5 (6) SSM3J306T 30 20 2.4 0.7 225 280 2.5 (6) SSM3J305T 30 20 1.7 0.7 477 137 1.3 (6) Part Number SSM3J326T Pch RDS(ON) Max (m) Ciss VGS VGS VGS VGS VGS VGS VGS VGS (pF) 1.5V 1.8V 2.0V 2.5V 4V 4.5V 7V 10V VDSS (V) Polarity TSM (P-ch MOSFETs) (Continued) * 0.7 (mm) S-MINI Pch 1.5 2.5 2.9 SSM3J325F * 20 8 2 1.2 311 231 179 150 270 4.6 (6) SSM3J328R * 20 8 6 2 88.4 56 39.7 29.8 840 12.8 (6) SSM3J331R * 20 8 4 2 150 100 75 55 630 4.7 (6) SSM3J327R * 20 8 3.9 2 240 168 123 93 290 4.6 (6) SSM3J332R * 30 12 6 2 144 72 50 47 560 8.2 (6) SSM3J334R * 30 20 4 2 105 71 280 5.9 (6) 12 8 6 2.5 85 40 28 18 (2) 20 8 2.7 2.5 300 160 110 6 (2) 20 12 6 2.5 100 41 30 17 (2) 20 12 7 2.5 95 37 26 1320 19 (2) 30 25/20 6 2.5 38 28 970 22 (2) 20 8 2.7 1.35 300 160 110 6 (3) 20 12 4 1.35 265 160 83 58 680 9.2 (3) 30 20 3.2 1.35 105 72 14 (3) 20 12 2.8 2.2 164 106 360 5.1 (1) 12 8 5.5 2.2 90 55 35 20 (1) 20 8 2.7 2.2 300 160 110 6 (1) 20 12 5 2.2 85 55 690 10 (1) 20 8 5.5 2.2 80 57 40 10 (1) 30 25/20 4.5 2.2 77 56 14 (1) 30 20 5 2.2 83 59 12.3 (1) 20 8 5.6 1.68 90 41 30 19 (4) 20 12 5.2 1.68 60 45 23 17 2280 28 (4) 20 12 7.2 1.68 80 30 18 33 (4) 30 25/20 7.2 1.68 44 33 870 19 (4) 40 20 4.8 1.68 54 40 19 (4) 20 8 3.8 1.48 144 90 60 46 10 (3) 20 12 4 1.48 265 160 83 58 680 9.2 (3) 20 12 6 1.48 42 30 1500 21.5 (3) (mm) 2.4 SOT-23F Pch 2.9 0.8 (mm) VS-8 Pch Single (mm) Pch Dual VS-6 Pch Single (mm) PS-8 Pch Single (mm) Pch Dual TPCF8101 TPCF8103 TPCF8105 TPCF8108 TPCF8107 TPCF8301 TPCF8305 TPCF8304 TPC6130 TPC6103 TPC6105 TPC6113 TPC6111 TPC6110 TPC6109-H TPCP8101 TPCP8105 TPCP8102 TPCP8106 TPCP8103-H TPCP8303 TPCP8306 TPCP8305 Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product Internal Connections (1) (2) 6 5 4 1 2 3 (3) (4) (6) 8 7 6 5 8 7 6 5 8 7 6 5 1 2 3 4 1 2 3 4 1 2 3 4 Note: Some MOSFETs do not have a Zener diode between gate and source. The internal connection diagrams only show the general configurations of the circuits. 38 2011/9 SCE0004L Package Polarity TSON Advance Pch Single (mm) SOP-8 Pch Single (mm) SOP Advance Pch Single (mm) PW-Mini RDS(ON) Max (m) Qg Internal (nC) VGS VGS VGS VGS VGS VGS VGS Connections 1.8 V 2.0 V 2.5 V 4 V 4.5 V 7 V 10 V (typ.) VDSS (V) VGSS V) ID (A) PD (W) TPCC8131 TPCC8102 TPCC8103 TPCC8104 TPCC8105 TPC8129 TPC8119 TPC8125 TPC8121 TPC8126 TPC8123 TPC8122 TPC8118 TPC8127 TPC8128 TPC8117 TPC8120 TPC8134 TPC8132 TPC8133 TPC8124 TPCA8105 TPCA8109 TPCA8128 TPCA8106 TPCA8120 TPCA8107-H TPCA8108 TPCA8104 30 25/20 10 20 23 17.6 40 30 20 15 26 33.2 18.9 26 (1) 30 20 18 27 25 12 38 (1) 30 25/20 20 27 12.4 8.8 58 (1) 30 25/20 23 30 10.4 7.8 76 (1) 30 25/20 9 1.9 22 28 39 (1) Part Number 30 20 10 1.9 28 13 40 (1) 30 25/20 10 1.9 17 13 64 (1) 30 20 10 1.9 24 12 42 (1) 30 25/20 11 1.9 14 10 56 (1) 30 25/20 11 1.9 12.5 9 68 (1) 30 20 12 1.9 16.5 8 62 (1) 30 20 13 1.9 15 7 65 (1) 30 25/20 13 1.9 8.9 6.5 92 (1) 30 25/20 16 1.9 6.9 5 115 (1) 30 20 18 1.9 7.9 3.9 130 (1) 30 25/20 18 1.9 4.2 3.2 180 (1) 40 25/20 5 1.9 66 52 20 (1) 40 25/20 7 1.9 33 25 34 (1) 40 25/20 9 1.9 18 15 64 (1) 40 25/20 12 1.9 10 8 104 (1) 12 8 6 20 92 51 33 18 (1) 30 25/20 12 30 13 9 56 (1) 30 25/20 34 45 6.7 4.8 115 (1) 30 20 40 45 7.8 3.7 130 (1) 30 25/20 45 45 4.0 3.0 190 (1) 40 20 7.5 30 37 30 27 (1) 40 20 40 45 9.5 100 (1) 60 20 40 45 24 16 90 (1) 2SJ360 60 1 1.5 1200 730 6.5 2SJ508 100 1 1.5 2500 1900 6.3 2SJ537 50 5 0.9 340 190 18 2SJ507 60 1 0.9 1000 700 5.6 2SJ509 100 1 0.9 2500 1900 6.3 Pch Single (mm) LSTM Pch Single (mm) Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. Internal Connections (1) 8 7 6 5 1 2 3 4 (1) Note: Some MOSFETs do not have a Zener diode between gate and source. The internal connection diagrams only show the general configurations of the circuits. 39 2011/9 SCE0004L |VDSS| 250 V (Power MOSFETs) Package Polarity (P-ch MOSFETs) (Continued) Part Number VDSS (V) VGSS (V) ID (A) PD (W) 2SJ439 16 5 2SJ668 60 20 2SJ338 180 2SJ567 RDS(ON) Max (m) VGS VGS 4 V 4.5 V VGS 1.8 V VGS 2.0 V VGS 2.5 V 20 280 200 5 20 1 20 200 2.5 20 2SJ610 250 2 20 2SJ681 60 5 2SJ680 200 Pch Single TJ15P04M3 40 Pch Single TJ10S04K3L TJ20S04K3L TJ40S04K3L TJ60S04K3L TJ80S04K3L TJ8S06K3L TJ15S06K3L TJ30S06K3L TJ50S06K3L TJ60S06K3L New PW-Mold Pch Single (mm) Qg Internal (nC) Connections (typ.) VGS 6 V VGS 7 V VGS 10 V 24 250 170 15 5000 2000 10 2550 24 20 250 170 15 2.5 20 2000 10 20 15 29 48 36 26 40 10/20 10 27 62 44 19 40 10/20 20 41 32 22.2 37 40 10/20 40 68 13 9.1 83 40 10/20 60 90 9.4 6.3 125 40 10/20 80 100 7.9 5.2 158 60 10/20 8 27 130 104 19 60 10/20 15 41 63 50 36 60 10/20 30 68 28 21.8 80 60 10/20 50 90 17.4 13.8 124 60 10/20 60 100 7.9 3.2 156 TJ80X04M3L 40 10/20 80 150 5.9 3.9 250 TJ80X06M3L 60 10/20 80 150 11.4 7.6 250 210 48 90 140 New PW-Mold2 Pch Single (mm) DPAK (mm) DPAK+ (mm) TFP Pch Single (mm) 2SJ619 100 16 75 320 2SJ620 100 18 125 120 2SJ438 60 5 25 280 190 22 2SJ313 180 1 25 5000 TJ70A06J3 60 70 54 10 8 246 TJ9A10M3 100 20 9 19 170 47 TJ11A10M3 100 20 11 24 130 69 TJ20A10M3 100 20 20 35 90 120 TO-220NIS Pch Single (mm) TO-220SIS Pch Single (mm) Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 40 2011/9 SCE0004L Package Polarity Part Number VDSS (V) ID (A) PD (W) VGS 1.8 V VGS 2.0 V VGS 2.5 V RDS(ON) Max (m) VGS VGS 4 V 4.5 V VGS 6 V VGS 7 V VGS 10 V Qg Internal (nC) Connections (typ.) TJ100F04M3L 40 100 250 5.4 3.6 250 TJ150F04M3L 40 150 300 4.2 2.8 390 TJ100F06M3L 60 100 250 10.7 7.1 250 TJ120F06J3 60 120 300 8 258 TJ150F06M3L 60 150 300 6.1 5.6 420 2SJ200 180 10 120 830 2SJ618 180 10 130 370 35 Pch Single 2SJ440 180 9 80 830 Pch Single 2SJ201 200 12 150 625 TO-220SM(W) Pch Single (mm) TO-3P(N) Pch Single (mm) TO-3P(N)IS (mm) TO-3P(L) (mm) Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 41 2011/9 SCE0004L |VDSS| 60 V (Power MOSFETs) Package Polarity (Complementary MOSFETs) VDSS VGSS (V) (V) Part Number SSM6L39TU SSM6L12TU UF6 2.1 SSM6L40TU N-ch P-ch 2.0 SSM6E03TU 0.7 (mm) SSM6E02TU SSM6E01TU RDS(ON) Max (m) ID (A) |VGS| 1.5 V |VGS| 1.8 V |VGS| 2.5 V |VGS| 4.0 V |VGS| 4.5 V |VGS| 10 V Ciss (pF) 20 10 1.6 247 190 139 119 265 20 8 1.5 430 294 213 250 245 30 12 0.5 180 145 20 12 0.5 430 260 Qg (nC) (typ.) 218 Internal FET Internal Connections SSM6N39TU SSM6P39TU (1) SSM6K24FE SSM6J25FE (1) (1) 30 20 1.6 182 180 30 20 1.4 403 120 SSM6N40TU SSM6P40TU 20 10 0.1 15 4.0 3.0 9.3 SSM3K16FU 20 8 1.8 335 180 144 335 SSM3J109TU 20 10 0.1 15 4.0 3.0 9.3 SSM3K16FU 20 8 1.8 364 204 136 568 (3) (3) 20 10 0.05 10 11 12 12 1 240 160 310 20 10 0.8 600 450 330 240 90 2.0 SSM6N42FE (1) 20 8 0.72 1040 670 440 300 110 1.76 SSM6P41FE (1) 30 20 4 77 50 10 (4) 30 20 3.2 105 72 14 (4) SSM3K04FE (2) ES6 N-ch P-ch SSM6L14FE * (mm) VS-8 N-ch P-ch TPCF8402 (mm) TPCP8404 PS-8 TPCP8403 N-ch P-ch TPCP8405 (mm) TPCP8406 SOP-8 TPCP8407 N-ch P-ch TPCP8408 (mm) 30 20 4 80 50 4.6 30 20 4 80 50 13 40 20 4.7 60 40 16 40 20 3.4 105 70 15 30 20 6.5 29 26 13.8 30 20 6 42 31.3 24.1 40 20 6 36 32 13.7 40 20 5 53.4 43.2 24.2 30 20 9 21 17 1190 17 30 20 7.4 23 29 1650 39 40 20 6.1 43.2 32 850 14 40 20 5.3 53.4 36 1105 24 Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product Internal Connections (1) (2) (3) 7 6 5 1 2 3 4 Q1 Q1 Q1 (4) 8 Q2 Q2 Q2 Note: Some MOSFETs do not have a Zener diode between gate and source. The internal connection diagrams only show the general configurations of the circuits. 42 2011/9 SCE0004L (4) (4) (4) (4) (4) (4) (Load SW) Package Polarity Part Number VDSS (V) VGSS (V) ID (A) PD (W) 12 8 5.5 1.96 RDS(ON) Max (m) Ciss |VGS| |VGS| |VGS| |VGS| |VGS| |VGS| |VGS| |VGS| (pF) 1.5 V 1.8 V 2.0 V 2.5 V 4V 4.5 V 7V 10 V Qg Internal (nC) Connections (typ.) PS-8 TPCP8401 Load SW 103 58 38 VGS 7V VGS 10 V 35 20 (1) (mm) Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. (MOSFET BipTr) Package Polarity Part Number VDSS (V) VGSS (V) ID (A) PD (W) 32 20 5.5 2.14 RDS(ON) Max (m) VGS VGS VGS VGS VGS VGS 1.5 V 1.8 V 2.0 V 2.5 V 4V 4.5 V Ciss (pF) Qg Internal (nC) Connections (typ.) PS-8 P-ch BipTr TPCP8J01 49 34 (mm) Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. Internal Connections (1) 8 7 6 (2) 5 8 7 6 5 3 4 R1 R2 1 2 3 4 1 2 Note: Some MOSFETs do not have a Zener diode between gate and source. The internal connection diagrams only show the general configurations of the circuits. 43 2011/9 SCE0004L (2) (MOSFET SBD) MOSFET Package Polarity Part Number 2.1 UFV 2.0 0.7 (mm) SBD RDS(ON) Max (m) Qg Internal VF Max (V) (nC) ConnecCiss VR IO |VGS| (pF) (V) (A) IF IF IF IF (typ.) tions 10 V 1.0 A 0.5 A 0.3 A 0.1 A VDSS VGSS ID (V) (V) (A) PD (W) |VGS| |VGS| |VGS| |VGS| 1.8 V 2.0 V 2.5 V 4.0 V SSM5G10TU 20 8 1.5 430 294 213 250 20 0.7 0.39 (1) SSM5G09TU 12 8 1.5 200 130 550 12 0.5 0.43 0.39 (1) SSM5G02TU 12 12 1 240 160 310 12 0.5 0.43 0.39 (1) SSM5G11TU 30 20 1.4 403 226 120 30 0.7 0.41 (1) 20 8 2 2 194 152 122 270 30 1 0.58 0.45 3.6 (5) TPCF8B01 20 8 2.7 1.35 300 160 110 20 1 0.49 6 (4) TPCP8BA1 20 12 1.3 260 180 370 25 0.7 0.41 (2) SSM5H10TU SSM5H08TU SSM5H11TU SSM5H16TU SSM5H01TU SSM5H07TU 20 10 1.6 190 139 119 260 20 0.7 0.39 (3) 20 12 1.5 220 160 125 20 0.5 0.45 (3) 30 20 1.6 182 122 180 30 0.7 0.41 (3) 30 12 1.9 296 177 133 123 30 0.8 0.45 0.36 (3) 30 20 1.4 450 200 106 20 0.5 0.45 (3) 20 20 1.2 540 300 36 12 0.5 0.43 0.39 (3) SSM5H14F 30 12 3 138 94 78 270 45 0.1 0.6 (3) |VGS| 4.5 V UDFN6 SSM6G18NU * (mm) Pch SBD VS-8 (mm) 2.8 PS8 2.9 0.8 (mm) 2.1 UFV 2.0 0.7 (mm) SMV Nch SBD 1.6 2.8 2.9 (mm) Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product Internal Connections (1) (2) (3) (4) (5) 8 7 6 5 1 2 3 4 Note: Some MOSFETs do not have a Zener diode between gate and source. The internal connection diagrams only show the general configurations of the circuits. 44 2011/9 SCE0004L MOSFET Package Polarity Part Number VDSS VGSS ID (V) (V) (A) SBD RDS(ON) Max (m) PD (W) |VGS| |VGS| |VGS| |VGS| |VGS| 1.8V 2.0 V 2.5 V 4.0 V 4.5 V |VGS| 10 V Qg Internal VF Max (V) (nC) ConnecCiss VR IO (pF) (V) (A) IF IF IF IF (typ.) tions 1.0 A 0.5 A 0.3 A 0.1 A PS8 TPCP8AA1 20 12 1.6 140 105 TPCP8A05-H 30 20 8 1.68 21.9 17.5 TPC8A05-H 30 20 10 1.9 17.6 13.3 TPC8A06-H 30 20 12 1.9 12.9 10.1 TPC8A03-H 30 20 17 1.9 7 5.6 TPC8A04-H 30 20 18 1.9 4.5 3.6 TPCA8A05-H 30 20 20 30 17.2 12.9 TPCA8A02-H 30 20 34 45 6.7 5.3 TPCA8A08-H 30 20 38 45 5.3 4.2 TPCA8A04-H 30 20 44 45 4.1 3.2 25 0.7 0.41 (2) 1300 16 (1) 15 (1) 1400 19 (1) 36 (1) 56 (1) 15 (1) 36 (1) 3500 48 (1) 59 (1) 2.8 306 2.9 0.8 (mm) SOP-8 N-ch SBD (mm) SOP Advance (mm) : Monolithic Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. Internal Connections (1) (2) 8 7 6 5 1 2 3 4 The internal connection diagrams only show the general configurations of the circuits. 45 2011/9 SCE0004L (MOSFET Switching Diodes) Package Polarity Part Number VDSS VGSS ID (V) (V) (A) MOSFET RDS(ON) Max (m) PD VGS VGS VGS VGS VGS (W) 1.5 V 1.8 V 2.5 V 4.0 V 4.5 V Di VGS 10 V Qg Internal VF Max (V) (nC) ConnecCiss VR IO trr IF IF IF (typ.) tions (pF) (V) (A) (ns) 1 mA 10 mA 0.1 A 2.1 UFV 2.0 0.7 N-ch Switching diodes SSM5H90TU 20 10 2.4 157 110 80 65 400 80 0.1 1.6 1.2 (1) (mm) Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. (MOSFET Zener Diodes) Package Polarity Part Number VDSS VGSS ID (V) (V) (A) MOSFET RDS(ON) Max (m) Ciss PD VGS VGS VGS VGS VGS VGS (pF) (W) 1.8 V 2.0 V 2.5 V 4.0 V 4.5 V 10 V VZ (V) @IZ (mA) Ze-Di Qg Internal IR (A) VF Max (V) (nC) Connec@VR IF IF IF (typ.) tions (V) 1.0 A 0.5 A 0.3 A 2.8 PS8 2.9 0.8 N-ch Zener diodes TPCP8R01 60 20 2.0 440 300 140 43 2 0.5 33 (mm) Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. Internal Connections (1) (2) The internal connection diagrams only show the general configurations of the circuits. 46 2011/9 SCE0004L (2) Bipolar Power Transistors Radio-Frequency Switching Power Transistors (2SA/2SC/TTA/TTC Series) VCEO (V) IC(A) 10/(15) (18)/20 (25)/30 40/(45) 2SA1426 2SA1204 0.8 1 () 2SA1483 (45 V) 0.2 2SC2884 () () (&)() TPC6D02 (15 V) 50/(60) () (W)() () (M)() 2SA2070 HN4B101J TPC6701 2SC5810 (M)(V) TPC6901A (NPN: 1.2 A) (PNP: 0.7 A) TPCP8901 (M)(P) (PNP: 0.8 A) TPC6D03 1.2 1.5 ( ) 2SA2065 2SA2058 2SC5784 2SA2069 2SC5819 TPC6503 S3F56 2 2SA1160 2SA1430 2SA2066 2SC3670 2SC5755 2SC5785 TPC6501 TPC6602 TPCP8504 ( ) () () ( ) () () () (P) 2SC2236 TPCP8902 2SC3673 (NPNPNP) (M)() (NPNPNP) : PNP-1.7A HN4B102J 3 2SA2059 TPCP8F01 ( ) TPC6603 TPCP8G01 * () ( ) TPC6604 * TPC6504 * () 2SA1020 () 2SA1241 2SA1382 2SA2056 TPC6601 2SC2655 2SC3076 TPCP8701 2SA2060 2SA1428 2SA1680 ( ) () ($)(P) () ($)(P) 2SC5738 3.5 * (M)(V) (NPNPNP) 2SA2061 * TTC007 () (W)(P) ( ) () (M)(P) TPC6902 2.5 2SC4682 (15 V) 2SC4683 (15 V) (&)() 2SA1734 TPCP8801 ( ) 2SA966 ( ) 2SA1203 () () () () TTA007 2SC5976 TPCP8H02 ( ) ($)(P) 2SC3422 TPCP8602 (@) 2SA1761 2SA1869 2SC3668 2SC4408 2SC5692 2SC6033 2SC4604 2SC4935 2SC5712 TPC6502 TPCP8505 2SC6126 TPCP8511 * ( ) The products shown in bold are also manufactured in offshore fabs. Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product : Being planned Legend Package Through-Hole Package ( ) LSTM () MSTM (@) TO-126 () TO-220NIS () PW-Mold () TO-3P(N) () TO-3P(N)IS ( ) TO-3P(L) Ammo Packaging x x x x x x Other Remarks Surface-Mount Package ( ) TSM () PW-Mini ( ) PW-Mold () VS-6 (P) PS-8 (V) SMV () TFP (%) Darlington (#) Built-in zener diode Part number in italic signifies built in Freewheel diode. 2SA****/2SC****: Complementary (&) 2-in-1 (transistor diode) ($) 2-in-1 (transistor S-MOS) (W) 2-in-1 (NPN (or PNP) 2) (M) 2-in-1 (NPN PNP) 47 2011/9 SCE0004L ( ) () ( ) ( ) () (W)(P) () () ( ) ( ) () (P) ( ) () () () (P) () (P) VCEO (V) IC(A) 10/(15) (18)/20 2SC5714 2SC6125 S3F62 4 2SC5713 S3F61 () () TPCP8601 2SA1242 5 (25)/30 () () () (P) () 2SC3072 () () 2SC3671 () 2SC6052 () 2SA1431 40/(45) 2SC5906 ( ) 2SC6062 ( ) 50/(60) 2SC5703 ( ) 2SA1244 2SC3074 () 2SA1931 2SA2097 2SC4881 () () () () ($)(P) () 2SC5886 2SC5886A TPCP8H01 S3H32 2SC6000 7 Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. : Being planned Legend Package Through-Hole Package ( ) LSTM () MSTM (@) TO-126 () TO-220NIS ( ) PW-Mold () TO-3P(N) () TO-3P(N)IS ( ) TO-3P(L) Ammo Packaging x x x x x x Other Remarks Surface-Mount Package ( ) TSM () PW-Mini () PW-Mold () VS-6 (P) PS-8 (V) SMV () TFP (%) Darlington (#) Built-in zener diode Part number in italic signifies built in Freewheel diode. 2SA****/2SC****: Complementary (&) 2-in-1 (transistor diode) ($) 2-in-1 (transistor S-MOS) (W) 2-in-1 (NPN (or PNP) 2) (M) 2-in-1 (NPN PNP) 48 2011/9 SCE0004L () Radio-Frequency Switching Power Transistors (2SA/2SC/TTA/TTC Series) (Continued) VCEO (V) IC(A) 80 100 120 (140)/150 2SA1145 2SA1360 2SA949 0.05 2SC3423 2SC2229 160 ( ) (@) ( ) 2SC2230 0.1 0.4 2SA817A 2SA1202 2SC2882 2SA965 2SA1425 TPCP8603 0.8 1 2SC2235 2SC3665 TPCP8507 TPCP8510 * 2SC6061 ( ) () (P) (P) () 2SC2073A 1.5 2 3 2SA1315 2SA1429 2SA2206 2SA1926 TTA003 2SC3328 2SC3669 2SC6079 2SC6124 2SC6076 TTC009 * 2SC3303 2SC4688 2SC5196 5 6 ( ) () () () () () () () () () () TPCP8501 2SC4689 2SC5197 2SA1941 2SC3710A () 2SC4690 (140 V) 2SC5198 (140 V) () () 2SA1942 2SC5199 TTA0001 * TTC0001 * TTA0002 * TTC0002 * 18 The products shown in bold are also manufactured in offshore fabs. Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product Legend Package Through-Hole Package ( ) LSTM () MSTM (@) TO-126 () TO-220NIS ( ) PW-Mold () TO-3P(N) () TO-3P(N)IS ( ) TO-3P(L) Ammo Packaging x x x x x x Other Remarks Surface-Mount Package ( ) TSM () PW-Mini ( ) PW-Mold () VS-6 (P) PS-8 (V) SMV () TFP ( ) () () (@) () () 10 2SA1452A 2SA1013 2SC2383 () 2SA1225 2SA2219 * 2SC6139 * TTA004 * TTC004 * (P) 8 12 ( ) ( ) () (%) Darlington (#) Built-in zener diode Part number in italic signifies built in Freewheel diode. 2SA****/2SC****: Complementary (&) 2-in-1 (transistor diode) ($) 2-in-1 (transistor S-MOS) (W) 2-in-1 (NPN (or PNP) 2) (M) 2-in-1 (NPN PNP) 49 2011/9 SCE0004L () () () VCEO (V) IC(A) (180)/200 230 300 (370)/400 ( ) () 2SC5122 2SC5307 0.05 2SC2230A (180 V) 0.1 ( ) 2SA1432 2SC3672 () 2SA1384 2SC4544 2SC3515 () () TPCP8604 0.3 TTC013 (350 V) 0.5 * () ( ) () ( ) 2SA1971 2SA1972 2SC5458 2SC5549 0.8 2SA1837 1 () 2SC4793 TTC011 * (@) 1.5 2SC5171 (180 V) 2 2SC5930 (285 V) 2SC6010 (285 V) 2SC6034 (285 V) TTC005 * (285 V) TTC008 * (285 V) () () 2SC6042 (375 V) 2SC6040 (410 V) TPCP8508 (375 V) 2SC6142 (375 V) TTC003 * TTC13003L * () () () (P) () () () () (P) () () ( ) () 2SC5548 (370 V) 2SC5548A () 2SA2034 TTC012 (375 V) 2SC5459 2SC5172 2SC6138 (375 V) 2SC5352 3 5 10 12 15 2SA2120 2SA2121 2SC5948 2SC5949 () ( ) 2SA1943 2SA1962 2SA1986 2SA1987 TTA1943 * 2SC5200 2SC5242 2SC5358 2SC5359 TTC5200 * * () () () () () ( ) () () ( ) ( ) The products shown in bold are also manufactured in offshore fabs. Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product : Being planned Legend Package Through-Hole Package ( ) LSTM () MSTM (@) TO-126 () TO-220NIS ( ) PW-Mold () TO-3P(N) () TO-3P(N)IS ( ) TO-3P(L) Ammo Packaging x x x x x x Other Remarks Surface-Mount Package ( ) TSM () PW-Mini () PW-Mold () VS-6 (P) PS-8 (V) SMV () TFP (%) Darlington (#) Built-in zener diode Part number in italic signifies built in Freewheel diode. 2SA****/2SC****: Complementary (&) 2-in-1 (transistor diode) ($) 2-in-1 (transistor S-MOS) (W) 2-in-1 (NPN (or PNP) 2) (M) 2-in-1 (NPN PNP) 50 2011/9 SCE0004L Radio-Frequency Switching Power Transistors (2SA/2SC/TTA/TTC Series) (Continued) VCEO (V) IC(A) (550)/600 2SC5201 0.05 0.5 800 ( ) 2SA2142 () 2SA2184 (550 V) () 0.8 1 3 5 10 1000/(1200) 2SC5460 2SC5466 2SC6127 (@) () () 2SC3405 () 2SC5353 2SC5354 2SC3307 () () () 2SC4686 2SC4686A (1200 V) () () The products shown in bold are also manufactured in offshore fabs. Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. Legend Package Through-Hole Package ( ) LSTM () MSTM (@) TO-126 () TO-220NIS () PW-Mold () TO-3P(N) () TO-3P(N)IS ( ) TO-3P(L) Ammo Packaging x x x x x x Other Remarks Surface-Mount Package ( ) TSM () PW-Mini ( ) PW-Mold () VS-6 (P) PS-8 (V) SMV () TFP (%) Darlington (#) Built-in zener diode Part number in italic signifies built in Freewheel diode. 2SA****/2SC****: Complementary (&) 2-in-1 (transistor diode) ($) 2-in-1 (transistor S-MOS) (W) 2-in-1 (NPN (or PNP) 2) (M) 2-in-1 (NPN PNP) 51 2011/9 SCE0004L Low-Frequency Power Transistors (2SB/2SD/TTB/TTD Series) VCEO (V) IC(A) 30 40 60/(65) 2SD2719 2SD2686 (#)(%)( ) (#)(%)() 2SD2088 2SD2695 2SD2352 (#)(%)( ) (#)(%)( ) () 2SB906 2SD1221 2SB1375 2SD2012 TTB001 * TTB002 * 2SD2204 (65 V) 2SD2131 () () () () (#)(%)() 0.8 1 1.5 2SD1140 2SD1631 (%)( ) (%)() 2 (%)() 2SB907 3 4 5 (#)(%)() The products shown in bold are also manufactured in offshore fabs. *: New product Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. Legend Package Through-Hole Package ( ) LSTM () MSTM (@) TO-126 () TO-220NIS () PW-Mold () TO-3P(N) () TO-3P(N)IS ( ) TO-3P(L) Ammo Packaging x x x x x x Other Remarks Surface-Mount Package ( ) TSM () PW-Mini ( ) PW-Mold () VS-6 (P) PS-8 (V) SMV () TFP (%) Darlington (#) Built-in zener diode Part number in italic signifies built in Freewheel diode. 2SA****/2SC****: Complementary (&) 2-in-1 (transistor diode) ($) 2-in-1 (transistor S-MOS) (W) 2-in-1 (NPN (or PNP) 2) (M) 2-in-1 (NPN PNP) 52 2011/9 SCE0004L Low-Frequency Power Transistors (2SB/2SD/TTB/TTD Series) (Continued) VCEO (V) IC(A) 80 100 120 2SB905 1.5 2SB1067 2SD1509 2SB1495 3 2SB908 2SD1223 2SD1220 () 2SD2636 (160 V) (%)() (%)(@) 2SB1457 4 450 TPCP8L01(1) (&)(P) 0.9 2 150/(160) (%)() 2SB1481 5 2SB1020A 7 2SD2206 2SD2536 2SD2257 2SD2092 2SD2129 2SD2241 (%)( ) (#)(%)( ) (%)() () (%)() (%)() 2SD2079 2SD2604 2SD1415A (%)() (#)(%)() (%)() 8 2SD1662 2SD1525 15 30 (%)() (%)( ) 2SD1314 (1) NPN HED (200 V/1 A) The products shown in bold are also manufactured in offshore fabs. Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. Legend Package Through-Hole Package ( ) LSTM () MSTM (@) TO-126 () TO-220NIS () PW-Mold () TO-3P(N) () TO-3P(N)IS ( ) TO-3P(L) Ammo Packaging x x x x x x Other Remarks Surface-Mount Package ( ) TSM () PW-Mini ( ) PW-Mold () VS-6 (P) PS-8 (V) SMV () TFP (%) Darlington (#) Built-in zener diode Part number in italic signifies built in Freewheel diode. 2SA****/2SC****: Complementary (&) 2-in-1 (transistor diode) ($) 2-in-1 (transistor S-MOS) (W) 2-in-1 (NPN (or PNP) 2) (M) 2-in-1 (NPN PNP) 53 2011/9 SCE0004L (%)( ) Transistors for Power Amps Part Number NPN PNP (Drive Stage) IC (A) VCEO (V) PC (W) Tc 25C ( Ta 25C) 2SC2235 2SC3665 2SC6139 * 2SC3423 TTC004 * 2SC4793 2SA965 2SA1425 2SA2219 * 2SA1360 TTA004 * 2SA1837 fT (MHz) Typ. (NPN/PNP) VCE (V) IC (A) 0.8 120 0.9 120 5 0.1 0.8 120 1 120 5 0.1 1.5 160 1 100 10 0.1 Package LSTM MSTM 0.05 150 5 200 5 0.01 1.5 160 10 100 10 0.1 1 230 20 100/70 10 0.1 TO-126 TO-220NIS Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product (Output Stage) Part Number NPN PNP 2SC5198 TTC0001 * 2SC5242 2SC5358 2SC5948 2SC5199 TTC0002 * 2SC5200 TTC5200 * 2SC5359 2SC5949 2SA1941 TTA0001 * 2SA1962 2SA1986 2SA2120 2SA1942 TTA0002 * 2SA1943 TTA1943 * 2SA1987 2SA2121 IC (A) VCEO (V) PC (W) 10 140 100 18 160 150 15 230 15 fT (MHz) Typ. (NPN/PNP) VCE (V) IC (A) 30 5 1 30 10 1 130 30 5 1 230 150 30 5 1 12 200 200 30/25 5 1 12 160 120 30 5 1 18 160 180 30 10 1 15 230 150 30 5 1 15 230 150 30 5 1 15 230 180 30 5 1 15 200 220 30/25 5 1 Tc 25C Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 54 Package TO-3P(N) TO-3P(L) *: New product 2011/9 SCE0004L Transistors for MOS Gate Drivers/Compact Motor Drivers Part Number HN4B101J HN4B102J TPC6901A TPC6902 TPCP8901 TPCP8902 Polarity PNP Absolute Maximum Ratings VCEO IC ICP PC (Note 1) (V) (A) (A) (mW) 30 1.0 (2-in-1 Transistors) hFE Min Max VCE (V) 5 550 200 500 2 IC (A) VCE(sat) (V) Max IC (A) IB (mA) 0.12 0.2 0.4 13 NPN 30 1.2 5 550 200 500 2 0.12 0.17 0.4 13 PNP 30 1.8 8 750 200 500 2 0.2 0.2 0.6 20 NPN 30 2 8 750 200 500 2 0.2 0.14 0.6 20 PNP 50 0.7 5 400 200 500 2 0.1 0.23 0.3 10 NPN 50 1 5 400 400 1000 2 0.1 0.17 0.3 6 PNP 30 1.7 8 700 200 500 2 0.2 0.2 0.6 20 NPN 30 2 8 700 200 500 2 0.2 0.14 0.6 20 PNP 50 0.8 5 830 200 500 2 0.1 0.2 0.3 10 NPN 50 1 5 830 400 1000 2 0.1 0.17 0.3 6 PNP 30 2 8 890 200 500 2 0.2 0.2 0.6 20 NPN 30 2 8 890 200 500 2 0.2 0.14 0.6 20 Circuit Configuration (Top View) Package 5 4 PNP SMV VS-6 NPN 1 2 3 6 5 4 PNP NPN 1 8 2 7 3 6 NPN PS-8 1 2 5 PNP 3 4 Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area 645 mm2, glass-epoxy, t 1.6 mm) and is in single-device operation. Copper thickness: 35 m for the TPC6901A and 70 m for the other transistors Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. (1-in-1 Transistors) NPN PNP NPN Min Max VCE (V) IC (A) VCE(sat) (V) Max IC (A) IB (mA) Complementary 10 1.5 500 200 500 2 0.2 0.19 0.6 20 20 1.5 500 200 500 2 0.15 0.14 0.5 17 2SC5784 20 2.5 625 200 500 2 0.5 0.19 1.6 53 2SC5735 50 1 700 200 500 2 0.1 0.2 0.3 10 TTC007 50 2 625 200 500 2 0.3 0.20 1.0 33 2SC5692 Package 2SC5755 10 2 500 400 1000 2 0.2 0.12 0.6 12 2SA2058 20 1.5 500 400 1000 2 0.15 0.12 0.5 10 2SA2065 20 3.5 625 400 1000 2 0.5 0.15 1.6 32 2SA2061 30 5 800 250 400 2 0.5 0.12 1.6 53 50 1 700 400 1000 2 0.1 0.12 0.3 6 TTA007 TSM 2.9 * (mm) 50 2.5 625 400 1000 2 0.3 0.14 1.0 20 2SA2056 2 1000 200 500 2 0.2 0.19 0.6 20 2SC5785 20 1.5 1000 200 500 2 0.15 0.14 0.5 17 2SC5819 20 3 1000 200 500 2 0.5 0.19 1.6 53 2SC5714 PW-Mini 50 1 1000 200 500 2 0.1 0.20 0.3 10 2SC5810 4.6 50 2 1000 200 500 2 0.3 0.20 1.0 33 2SC5712 10 2 1000 400 1000 2 0.2 0.12 0.6 12 2SA2066 20 1.5 1000 400 1000 2 0.15 0.12 0.5 10 2SC2069 20 4 1000 400 1000 2 0.5 0.15 1.6 32 2SA2059 50 1 1000 400 1000 2 0.1 0.17 0.3 6 2SA2070 50 3 1000 400 1000 2 0.3 0.14 1 20 2SA2060 50 3 1000 250 400 2 0.3 0.18 1 33 55 (Note 2) * 10 Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area 645 mm2, t 1.6 mm). Note 2: Ultra-high-speed using by the Super Hi-Met process and Low VCE(sat) products. Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. Remarks 1.6 hFE 2.8 PNP Absolute Maximum Ratings VCEO IC PC (Note 1) (V) (A) (mW) 2.5 2SA2058 2SA2065 2SA2061 TTA007 * 2SA2056 2SC5755 2SC5784 2SC5738 2SC6062 TTC007 * 2SC5692 2SA2066 2SA2069 2SA2059 2SA2070 2SA2060 2SC5785 2SC5819 2SC5714 2SC5810 2SC5712 2SC6126 Polarity 4.2 Part Number (mm) (Note 2) *: New product 2011/9 SCE0004L Transistors for Switching Power Supplies (For AC/DC Converters) Absolute Maximum Ratings (Ta 25C) Part Number Applications 2SC5930 2SC6010 2SC6034 TTC008 * 2SC5548 2SC5548A 2SC5458 TTC003 * 2SC5459 2SC5172 2SC5352 2SC6042 2SC6040 2SC6142 TTC012 * 2SC5353 2SC5354 2SC3307 VCBO (V) VCEO (V) 285 370 600 400 Switching regulator 800 Pc (W) Tc 25C ( Ta 25C) 1 1 MSTM 1 1 MSTM 1 1 MSTM 1.5 1.1 PW-Mold 2 15 PW-Mold 2 15 PW-Mold 0.8 10 PW-Mold 1.5 1.1 PW-Mold 3 25 TO-220NIS Package 5 25 TO-220NIS 10 80 TO-3P(N) 375 1 1 MSTM 410 1 1 MSTM 1.5 1.1 PW-Mold 375 900 IC (A) 800 2 1.1 PW-Mold 3 25 TO-220NIS 5 100 TO-3P(N) 10 150 Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. TO-3P(L) *: New product Current Control Transistors for LED Backlighting Absolute Maximum Ratings VCEO IC PC (V) (A) (W) Part Number TTC005 TTC011 TTC013 * * * hFE Min Max VCE (V) IC (A) (V) Max VCE(sat) IC (A) IB (mA) Package PW-Mini 285 1 1.1 (Note 1) 100 200 5 0.1 1 0.6 75 230 1 10 (Note 2) 100 320 5 0.2 1 0.3 30 TO-126 350 0.5 1 (Note 1) 100 200 5 0.05 0.3 0.16 20 PW-Mini Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area 645 mm2, glass-epoxy, t 1.6 mm). Note 2: Tc 25C Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 56 *: New product 2011/9 SCE0004L Transistors for High-Voltage Power Supplies (For DC/DC Converters) Absolute Maximum Ratings Part Number 2SC6061 TPCP8510 * TPCP8507 2SC6076 2SC6124 TTC009 * 2SC6079 hFE VCEX (V) VCEO (V) IC (A) Pc (W) 150 120 1 150 120 1 150 120 160 80 VCE (sat) (V) VCE (V) IC (A) 300 2 0.1 300 2 0.1 120 300 2 180 450 2 Min Max 0.625 (Note 1) 120 1.1 (Note 1) 120 1 1.25 (Note 1) 3 10 (Note 2) Package IC (A) IB (mA) 0.14 0.3 10 TSM 0.14 0.3 10 PS-8 0.1 0.14 0.3 10 PS-8 0.5 0.5 1 100 PW-Mold Max 160 80 2 1 (Note 1) 100 200 2 0.5 0.5 1 100 PW-Mini 160 80 3 15 (Note 2) 100 200 2 0.5 0.5 1 100 TO-220NIS 160 80 2 1 (Note 3) 180 450 2 0.5 0.5 1 100 Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area 645 mm2, glass-epoxy, t 1.6 mm). Note 2: Tc 25C Note 3: Ta 25C Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. MSTM *: New product (Transistors for Droppers) Absolute Maximum Ratings Part Number 2SB906 TTB001 TTB002 * * hFE VCEO (V) IC (A) Pc (W) Tc 25C 60 3 20 60 60 3 36 100 60 3 25 100 250 Min VCE (sat) (V) VCE (V) IC (A) 200 5 0.5 250 5 0.5 5 0.5 Max IB (mA) 1.7 3 300 1.7 3 300 TFP 1.7 3 300 PW-Mold Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. Absolute Maximum Ratings 2SA1972 2SA1971 TPCP8604 2SA2184 2SA2142 2SC5122 2SC5307 2SC5201 2SC6127 2SC5460 2SC5466 2SC4686A 2SC5563 Circuit Configuration (Top View) Package VCEO (V) IC (A) Pc (W) 400 0.5 0.9 LSTM 400 0.5 1 PW-Mini 400 0.3 1 PS-8 550 1 1 PW-Mold 600 0.5 10 PW-Mold 400 0.05 0.9 LSTM 400 0.05 1 PW-Mini 600 0.05 0.9 LSTM 800 0.05 10 PW-Mold 800 0.05 10 TO-126 800 0.05 10 TO-220NIS 1200 0.05 10 TO-220NIS 1500 0.02 10 TO-220NIS Remarks SMD SMD only TPCP8604 8 7 6 5 SMD only PNP 1 2 3 4 SMD only The circuit configuration diagrams only show the general configurations of the circuits. Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 57 PW-Mold *: New product (High-Voltage Transistors) Part Number Package IC (A) Max 2011/9 SCE0004L Low Saturation Voltage Transistors Part Number 2SA2058 2SA2065 2SA2061 TTA007 2SA2056 2SC5755 2SC5784 2SC5738 2SC5976 2SC5906 2SC6062 TTC007 2SC5692 2SC6033 2SC5703 2SC6061 HN4B101J HN4B102J 2SA2066 2SA2069 2SA2059 2SA2070 2SA2060 2SA2206 2SC5785 2SC5713 2SC5819 2SC6125 2SC5714 2SC5810 2SC6126 2SC5712 2SC6124 TPC6501 TPC6502 TPC6503 S3F61 S3F62 TPC6504 TPC6601 TPC6602 TPC6603 S3F56 TPC6604 TPC6701 TPC6901A TPC6902 Configuration PNP single * NPN single * PNP NPN PNP single NPN single * NPN single VCEO (V) (Small Surface-Mount Packages for Personal Equipments) Absolute Maximum Ratings Pc (mW) IC (A) ICP (A) hFE (Note 1) Pc (mW) (Note 1)t 10 s Min Max VCE (sat) (V) VCE (V) IC (A) Max IC (A) IB (mA) Marking 10 1.5 2.5 500 750 200 500 2 0.2 0.19 0.6 20 20 1.5 2.5 500 750 200 500 2 0.15 0.14 0.5 17 WK 20 2.5 4 625 1000 200 500 2 0.5 0.19 1.6 53 WE 50 1 2 700 1100 200 500 2 0.1 0.2 0.3 10 WH 50 2 3.5 625 1000 200 500 2 0.3 0.20 1.0 33 WF 10 2 3.5 500 750 400 1000 2 0.2 0.12 0.6 12 WL 20 1.5 2.5 500 750 400 1000 2 0.15 0.12 0.5 10 WJ 20 3.5 6 625 1000 400 1000 2 0.5 0.15 1.6 32 WD 30 3 5 625 1000 250 400 2 0.3 0.14 1.0 33 WW 30 4 7 800 1250 200 500 2 0.5 0.2 1.6 53 WP 30 5 10 800 1250 250 400 2 0.5 0.12 1.6 53 WR 50 1 2 700 1100 400 1000 2 0.1 0.12 0.3 6 WG 50 2.5 4 625 1000 400 1000 2 0.3 0.14 1.0 20 WB 50 2.5 5 625 1000 250 400 2 0.3 0.18 1.0 33 WX 50 4 7 800 1250 400 1000 2 0.5 0.12 1.6 32 WA WM 120 1 2 625 1000 120 300 2 0.1 0.14 0.3 10 WN 30 1/1.2 5 550 850 200 500 2 0.12 0.2/0.17 0.4 13 5K 30 1.8/2 8 750 750 200 500 2 0.2 0.2/0.14 0.6 20 5L 10 2 3.5 1000 2000 200 500 2 0.2 0.19 0.6 20 4E 20 1.5 2.5 1000 2000 200 500 2 0.15 0.14 0.5 17 4D 20 3 5 1000 2500 200 500 2 0.5 0.19 1.6 53 4F 50 1 2 1000 2000 200 500 2 0.1 0.2 0.3 10 4C 50 2 3.5 1000 2500 200 500 2 0.3 0.20 1.0 33 4G 80 2 4 1000 2500 100 200 2 0.5 0.5 1.0 100 4K 10 2 3.5 1000 2000 400 1000 2 0.2 0.12 0.6 12 3E 10 4 7 1000 2500 400 1000 2 0.5 0.15 1.6 32 2C 20 1.5 2.5 1000 2000 400 1000 2 0.15 0.12 0.5 10 3D 20 4 8 1000 2500 180 390 2 0.5 0.2 1.6 53 4L 20 4 7 1000 2500 400 1000 2 0.5 0.15 1.6 32 2E 50 1 2 1000 2000 400 1000 2 0.1 0.17 0.3 6 3C 50 3 6 1000 2500 250 400 2 0.3 0.18 1.0 33 4M 50 3 5 1000 2500 400 1000 2 0.3 0.14 1 20 2A 80 2 4 1000 2500 100 200 2 0.5 0.5 1.0 100 4J 10 2 3.5 800 1600 400 1000 2 0.2 0.12 0.6 12 H2A 50 3 5 800 1600 400 1000 2 0.3 0.14 1 20 H2B 20 1.5 2.5 800 1600 400 1000 2 0.15 0.12 0.5 10 H2C 10 4 6 800 1600 400 1000 2 0.5 0.15 1.6 32 20 4 6 800 1600 400 1000 2 0.5 0.15 1.6 32 50 1 2 800 1600 400 1000 2 0.1 0.17 0.3 6 H2D 50 2 3.5 800 1600 200 500 2 0.3 0.20 1.0 33 H3A 10 2 3.5 800 1600 200 500 2 0.2 0.19 0.6 20 H3B H3C 20 3 5 800 1600 200 500 2 0.5 0.19 1.6 53 20 1.5 2.5 800 1600 200 500 2 0.15 0.14 0.5 17 * 50 1 2 800 1600 200 500 2 0.1 0.23 0.3 10 H3D PNP single NPN/dual PNP NPN 50 1 2 660 (Note2) 400 1000 2 0.1 0.17 0.3 6 H4A 50 0.7/1.0 5 400 500 200/400 500/1000 2 0.1 0.23/0.17 0.3 10/6 H6B 30 1.7/2 8 700 1000 200 500 2 0.2 0.2/0.14 0.6 20 Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area 645 mm2, glass-epoxy, t 1.6 mm). Note 2: Total loss of dual-device operation Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 58 Package TSM equivalent to SC-59 SOT-23 SMV PW-Mini equivalent to SC-62 SOP-89 VS-6 (equivalent to TSOP-6) H6C *: New product : Being planned 2011/9 SCE0004L Low Saturation Voltage Transistors Part Number 2SA2097 2SA1241 2SA1244 TTA003 2SC6076 2SC5886 2SC5886A 2SC3076 2SC6052 2SC3074 S3H32 2SC3303 2SC6000 TPCP8501 TPCP8507 TPCP8510 TPCP8511 TPCP8505 TPCP8504 TPCP8601 TPCP8603 TPCP8602 TPCP8701 TPCP8H01 (Note 2) TPCP8H02 (Note 2) (Small Surface-Mount Packages for Personal Equipments) (Continued) Absolute Maximum Ratings Configuration Pc (mW) VCEO (V) IC (A) ICP (A) PNP single * NPN single * * TPCP8F01 (Note 2) NPN single hFE (Note 1) Pc (mW) (Note 1)t 10 s Min Max VCE (sat) (V) VCE (V) IC (A) Max IC (A) IB (mA) Marking 50 5 10 20 (Note 3) 200 500 2 0.5 0.27 1.6 53 A2097 50 2 3 10 (Note 3) 70 240 2 0.5 0.5 1 50 A1241 50 5 8 20 (Note 3) 70 240 1 1 0.4 3 150 A1244 -80 3 5 10 (Note 3) 100 200 2 0.5 0.5 1 100 A003 80 3 5 10 (Note 3) 180 450 2 0.5 0.5 1 100 C6076 50 5 10 20 (Note 3) 400 1000 2 0.5 0.22 1.6 32 C5886 50 5 10 20 (Note 3) 400 1000 2 0.5 0.22 1.6 32 C5886A 50 2 3 10 (Note 3) 70 240 2 0.5 0.5 1 50 C3076 20 5 7 10 (Note 3) 180 390 2 0.5 0.2 1.6 53 C6052 50 5 8 20 (Note 3) 70 240 1 1 0.4 3 150 C3074 50 5 7 20 (Note 3) 200 500 2 0.5 0.2 1.6 53 80 5 8 20 (Note 3) 70 240 1 1 0.4 3 150 C3303 50 7 10 20 (Note 3) 250 400 2 2.5 0.18 2.5 83 C6000 100 2 4 1300 3300 100 300 2 0.3 0.2 1 33 8501 120 1 2 1250 3000 120 300 2 0.1 0.14 0.3 10 8507 120 1 2 1100 2250 120 300 2 0.1 0.14 0.3 10 8510 50 3 5 1250 3000 250 400 2 0.3 0.18 1 33 8511 50 3 5 1250 3000 400 1000 2 0.3 0.14 1 20 8505 10 2 3.5 1200 2800 400 1000 2 0.2 0.12 0.6 12 8504 8601 20 4 7 1300 3300 200 500 2 0.6 0.19 2 67 120 1 2 1250 3000 120 300 2 0.1 0.2 0.3 10 8603 50 2.5 4 1250 3000 200 500 2 0.3 0.2 1 33 8602 NPN/dual 50 3 5 940 1770 400 1000 2 0.3 0.14 1 20 8701 NPN S-MOS 50 5 7 1000 2000 250 400 2 0.5 0.13 1.6 53 8H01 30 3 5 1000 2000 250 400 2 0.3 0.14 1 33 8H02 20 3 5 1000 200 500 2 0.5 0.19 1.6 53 8F01 PNP single PNP S-MOS TPCP8901 TPCP8902 PNP NPN TPCP8L01 (Note 4) TPCP8G01 (Note 5) * 50 0.8/1.0 5 830 1480 2 0.1 0.2/0.17 0.3 10/6 8901 30 2 8 890 1670 200 500 2 0.2 0.2/0.14 0.6 20 8902 NPN Darlington HED 120 0.9 2 900 2000 9000 2 1 1.5 1 1 8L01 PNP Pch 20 3 5 940 1770 200 500 2 0.5 0.19 1.6 53 200/400 500/1000 Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area 645 mm2, glass-epoxy, t 1.6 mm). Note 2: Built-in SBD, VRRM 30 V, IO 0.7 A, VF 0.4 V (MAX)@IF 0.5 A, IR 100 A (MAX)@VR 10 V Note 3: Tc 25C Note 4: Built-in HED, VRRM 200 V, IF(AV) 1 A Note 5: Pch MOS VDSS 20 V, ID = 2 A, RON 130 m Max Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 59 Package PW-Mold SC-63 PS-8 8G01 *: New product : Being planned 2011/9 SCE0004L (Power-Mold Transistors (SC-63/64) ) Absolute Maximum Ratings (Ta 25C) Part Number 2SA1225 2SA1241 2SC3076 2SA1242 2SC3072 2SA1244 2SC3074 2SA2097 2SC5886 2SC5886A 2SB905 2SD1220 2SB906 2SD1221 TTB002 TTA003 2SB907 2SC6076 2SB908 2SD1223 2SC3303 2SA2034 2SA2184 2SA2142 2SC5458 2SC5548 2SC5548A 2SC6127 2SC3405 2SC6142 TTC003 TTC008 TTC012 2SC6000 2SC6052 Applications Power amplification for driver Power amplification Strobe flash, power amplification High-current switching TV vertical output, TV audio output (B) class * * Low-frequency power amplification Switching, power amplification Switching, power amplification Switching High-voltage switching * * * High-speed switching Complementary VCEO IC PC PC (V) (A) (W) (W) Equivalent Product 160 1.5 1.0 15 50 2.0 1.0 10 2SC3076 2SA1892 2SC5029 Remarks 50 2.0 1.0 10 2SA1241 20 5.0 1.0 10 2SC3072 ( ) 2SA1893 20 5.0 1.0 10 2SA1242 ( ) 2SC3420 50 5.0 1.0 20 2SC3074 2SA1905 50 5.0 1.0 20 2SA1244 2SC5076 50 5.0 1.0 20 50 5.0 1.0 20 High 50 5 1.0 20 High , VCBO 120 V 150 1.5 1.0 10 2SD1220 2SA1408 150 1.5 1.0 10 2SB905 2SC3621 60 3.0 1.0 20 2SD1221 2SB834 60 3.0 1.0 20 2SB906 2SD880 High 60 3.0 1.0 30 80 3.0 10 40 3.0 1.0 15 80 3 10 80 4.0 1.0 15 2SD1223 Darlington type 80 4.0 1.0 15 2SB908 Darlington type 80 5.0 1.0 20 2SC3258 400 2 1.0 15 550 1 10 600 0.5 15 400 0.8 1.0 10 370 2 1.0 15 400 2 1.0 15 800 0.05 1.0 10 800 0.8 1.0 20 375 1.5 1.1 400 1.5 1.1 285 1.5 1.1 375 2 1.1 50 7 1.0 20 20 5 1.0 10 : Tc 25C Darlington type *: New product : hFE classification varies Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 60 2011/9 SCE0004L (PW-Mini Transistors (SC-62) ) Absolute Maximum Ratings Pc Pc Pc VCEO IC (W) (W) (W) (V) (A) Part Number NPN 2SC2881 2SC2882 2SC2884 2SC3515 2SC5785 2SC5713 2SC5819 2SC6125 2SC5714 2SC6126 2SC5712 2SC5810 2SD2686 2SC6124 TTC005 * TTC013 * PNP 2SA1201 2SA1202 2SA1203 2SA1204 2SA1384 2SA1483 2SA1971 2SA2066 2SA2069 2SA2059 2SA2060 2SA2070 2SA2206 VCE Min Max (V) Electrical Characteristics VCE (sat) IC (V) IC IB (MHz) (mA) Max (mA) (mA) Typ. hFE Equivalent to TO-92MOD (TO-92) Marking fT VCE IC (V) (mA) NPN PNP Remarks/ Applications NPN PNP 0.5 1.0 120 0.8 80 240 5 100 1.0 500 50 120 5 100 C D 2SC2235 2SA965 Audio driver 0.5 1.0 80 0.4 70 240 2 50 0.4 200 20 120/100 10 10 E F (2SC1627) (2SA817) Low saturation 0.5 1.0 30 1.5 100 320 2 500 2.0 1500 30 120 2 500 G H 2SC2236 2SA966 Audio driver 0.5 1.0 30 0.8 100 320 1 100 0.5/0.7 500 20 120 5 10 P R (2SC2120) (2SA950) Low saturation 0.5 1.0 300 0.1 30 150 10 20 0.5 20 2 60 10 20 I J (2SC2551) (2SA1091) 0.5 1.0 45 0.2 40 240 1 10 0.3 100 10 200 10 10 V W 0.5 1.0 400 0.5 140 400 5 100 1.0 100 10 35 5 50 AL 2SA1972 High-voltage 1 10 2 400 1000 2 200 0.12 600 12 3E Low saturation 1 10 2 200 500 2 200 0.19 600 20 4E Low saturation 1 10 4 400 1000 2 500 0.15 1600 32 2C Low saturation 1 20 1.5 400 1000 2 150 0.12 500 10 3D Low saturation 1 20 1.5 200 500 2 150 0.14 500 17 4D Low saturation 1 20 4 180 390 2 500 0.20 1600 53 4L High-speed switching 1 20 4 400 1000 2 500 0.15 1600 32 2E Low saturation 1 20 3 200 500 2 500 0.19 1600 53 4F Low saturation 1 50 3 250 400 2 300 0.18 1000 33 4M High-speed switching 1 50 3 400 1000 2 300 0.14 1000 20 2A Low saturation 1 50 2 200 500 2 300 0.20 1000 33 4G Low saturation 1 50 1 400 1000 2 100 0.17 300 6 3C Low saturation 1 50 1 200 500 2 100 0.2 300 10 4C Low saturation 1 6010 1 2000 2 1000 1.5 1000 1 3H Darlington 1 80 2 100 200 2 500 0.5 1000 100 150/100 2 500 4J 4K Low saturation 1.1 285 1 100 200 5 100 1.0 600 75 4N LED backlight 1 350 0.5 100 200 5 50 0.3 160 20 4R LED backlight (Note 1) (Note 2) Note: The hFE classification that appears instead of the shown in the Marking column will be one of the following: A, B, C, D, O, R or Y, according to the rank. Note 1: The rating applies when the transistor is mounted on a ceramic board (250 mm2 x 0.8 mm). Note 2: The rating applies when the transistor is mounted on a glass-epoxy board (645 mm2 x 1.6 mm). Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. Low saturation Low saturation *: New product (TSM Transistors) Part Number Absolute Maximum Ratings Pc (mW) IC (A) ICP (A) hFE NPN VCEO (V) (Note1) Pc (mW) (Note 1) t 10s Min Max 2SA2058 2SA2065 2SA2061 TTA007 * 2SA2056 2SC5755 2SC5784 2SC5738 10 1.5 2.5 500 750 200 20 1.5 2.5 500 750 20 2.5 4 625 50 1 2 50 2 10 2 20 1.5 2.5 500 750 400 20 3.5 6 625 1000 400 2SC5976 2SC5906 30 30 3 4 VCE (sat) (V) Marking Remarks/ Applications 20 WM Low saturation 17 WK Low saturation 1.6 53 WE Low saturation 0.2 0.3 10 WH Low saturation 0.3 0.20 1.0 33 WF Low saturation 0.2 0.12 0.6 12 WL Low saturation 2 0.15 0.12 0.5 10 WJ Low saturation 2 0.5 0.15 1.6 32 WD Low saturation WW Ultra-high-speed switching Low saturation voltage WP Ultra-high-speed switching Low saturation voltage 53 WR Ultra-high-speed switching Ultra-low saturation voltage VCE (V) IC (A) 500 2 0.2 200 500 2 1000 200 500 700 1100 200 3.5 625 1000 3.5 500 750 5 7 625 800 1000 1250 IC (A) IB (mA) 0.19 0.6 0.15 0.14 0.5 2 0.5 0.19 500 2 0.1 200 500 2 400 1000 2 1000 1000 250 400 200 500 2 2 0.3 0.5 Max 0.14 0.2 1.0 1.6 33 53 2SC6062 30 TTC007 * 2SC5692 50 1 2 700 1100 400 1000 2 0.1 0.12 0.3 6 WG Low saturation 50 2.5 4 625 1000 400 1000 2 0.3 0.14 1.0 20 WB Low saturation 2SC6033 50 2SC5703 2SD2719 2SC6061 120 5 10 800 625 1250 250 400 2 0.5 0.12 1.6 250 400 2 0.3 0.18 1.0 33 WX Ultra-high-speed switching Low saturation voltage 1250 400 1000 2 0.5 0.12 1.6 32 WA Low saturation 1250 2000 2 1.0 1.5 1 1 WV Darlington 120 300 2 0.1 0.14 0.3 10 WN Low saturation 2.5 5 1000 50 4 7 800 60 10 0.8 3 800 1 2 625 1000 Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area 645 mm2, glass-epoxy, t 1.6 mm). Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 61 *: New product 2011/9 SCE0004L Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Bipolar Transistors Part Number Package S-MINI 2SC2714 Absolute Maximum Ratings (Ta 25C) VCEO IC PC Tj (V) (mA) (mW) (C) Applications 2SC5084 TO-92 Equivalent Product FM-band radio-frequency amps 30 20 150 125 Q 2SC1923 VHF/UHF-band low-noise amps 12 30 150 125 MA 2.9 2SC5064 Marking Remarks fT 550 MHz fT 7 GHz 80 150 125 MC fT 7 GHz 30 150 125 MF fT 6 GHz VHF/UHF-band low-noise amps 12 80 150 125 C fT 7 GHz VHF/UHF-band low-noise amps 12 80 150 125 ZP fT 8 GHz VHF/UHF-band low-voltage operation, low phase noise 5 40 150 125 MR fT 10 GHz FM-band radio-frequency amps 30 20 100 125 Q 2SC1923 fT 550 MHz VHF/UHF-band low-noise amps 12 30 100 125 MA fT 7 GHz VHF/UHF-band low-noise amps 12 80 100 125 MC fT 7 GHz VHF/UHF-band low-noise amps 10 15 100 125 ME fT 10 GHz VHF/UHF-band oscillators 10 30 100 125 MF fT 6 GHz UHF-band low-voltage oscillators and amps 5 60 100 125 T4 fT 4 GHz VHF/UHF-band low-noise amps 12 80 100 125 MC fT 7 GHz * VHF/UHF-band low-noise amps 5 40 170 (Note 2) 150 MT fT 16 GHz MT4S03BU * VHF/UHF-band low-noise amps 5 40 175 (Note 2) 150 MR fT 12 GHz VHF/UHF-band low-noise amps 5 50 175 (Note 2) 150 R8 fT 14.5 GHz FM-band radio-frequency amps 30 20 100 125 Q 2SC1923 fT 550 MHz VHF/UHF-band low-noise amps 12 30 100 125 M1/M2 fT 7 GHz VHF/UHF-band low-noise amps 12 80 100 125 M5/M6 fT 7 GHz VHF/UHF-band low-noise amps 10 15 100 125 M9/MA fT 10 GHz VHF/UHF-band oscillators 10 30 100 125 MB/MC fT 6 GHz VHF/UHF-band low-voltage operation, low noise 6 40 105 (Note 1) 125 08 fT 6 GHz VHF/UHF-band low-noise amps, low-distortion amps 6 80 900 (Note 2) 150 T3 fT 11.5 GHz VHF/UHF-band low-noise amps, low-distortion amps 6 80 900 (Note 2) 150 T6 fT 11 GHz VHF/UHF-band low-noise amps, low-distortion amps 12 80 900 (Note 2) 150 MU fT 7 GHz VHF/UHF-band low-noise amps, low-distortion amps 6 80 800 (Note 2) 150 T6 fT 12 GHz VHF/UHF-band low-noise amps, low-distortion amps 6 80 320 (Note 1) 150 T6 fT 13.5 GHz VHF/UHF-band low-noise amps, low-distortion amps 12 80 320 (Note 1) 150 MU fT 7.5 GHz VHF/UHF-band low-noise amps, low-distortion amps 12 80 1800 (Note 2) 150 MU fT 7 GHz VHF/UHF-band low-noise amps, low-distortion amps 6 80 1800 (Note 2) 150 T2 fT 9 GHz VHF/UHF-band low-noise amps, low-distortion amps 6 80 1800 (Note 2) 150 T5 fT 8.5 GHz 2.5 12 10 1.5 VHF/UHF-band low-noise amps VHF/UHF-band oscillators 2SC5106 SMQ 2SC5087 2.9 2.9 1.5 2SC5087R MT4S03A 2SC4215 2SC5065 2SC5085 2SC5095 2SC5107 MT3S16U USM 2.1 1.25 2.0 USQ 2SC5088 MT4S24U 2.1 1.25 * 2SC4915 2SC5066 2SC5086 2SC5096 2SC5108 SSM 1.6 1.6 0.8 MT4S23U 2.0 CST3 0.6 1.0 MT3S11CT UFM MT3S15TU * 2.0 1.7 2.1 MT3S19TU * MT3S20TU * S-MINI * MT3S19R * MT3S20R * MT3S20P * MT3S21P * MT3S22P * 2.5 MT3S19 1.5 2.9 SOT-23F 1.8 2.4 2.9 Pw-Mini 2.5 4.2 4.6 : Denotes a hFE class. Note 1: When mounted on a glass-epoxy PCB board Note 2: Mounted on a ceramic board The products shown in bold are also manufactured in offshore fabs. Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 62 *: New product 2011/9 SCE0004L SiGe HBT Absolute Maximum Ratings (Ta 25C) Part Number Package USQ MT4S102U Applications Marking Remarks VCEO IC PC Tj (V) (mA) (mW) (C) UHF/SHF-band low-noise amps 3 20 60 150 P8 fT 24 GHz UHF/SHF-band low-noise amps 4 50 100 150 P3 fT 26.5 GHz, high ESD immunity UHF/SHF-band low-noise amps 4 35 100 150 P4 fT 27.5 GHz, high ESD immunity UHF/SHF-band low-noise amps 3 20 60 150 P8 fT 25 GHz UHF/SHF-band low-noise amps 4 50 100 150 P3 fT 26.5 GHz, high ESD immunity UHF/SHF-band low-noise amps 4 35 100 150 P4 fT 27.5 GHz, high ESD immunity VHF/UHF-band low-voltage operation, low-noise amps 6 100 700 (Note 2) 150 R5 fT 11.5 GHz VHF/UHF-band low-voltage operation, low-noise amps 5.3 100 800 (Note 2) 150 R7 fT 12.5 GHz 6 100 800 (Note 2) 150 R5 fT 10 GHz 5.3 100 900 (Note 2) 150 R7 fT 11.2 GHz 6 100 1000 (Note 2) 150 R5 fT 8 GHz 5.3 100 1600 (Note 2) 150 R7 fT 7.7 GHz 2.0 2.1 1.25 MT4S300U * MT4S301U * TESQ MT4S102T * MT4S301T * MT3S111 * MT3S113 * 1.2 MT4S300T 0.9 1.2 S-MINI 2.5 1.5 2.9 UFM MT3S111TU * 2.0 1.7 MT3S113TU * 2.1 VHF/UHF-band low-voltage operation, low-noise amps Pw-Mini MT3S111P 4.6 * MT3S113P 2.5 4.2 VHF/UHF-band low-voltage operation, low-noise amps * Note 2: Mounted on a ceramic board The products shown in bold are also manufactured in offshore fabs. *: New product Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 63 2011/9 SCE0004L Radio-Frequency Small-Signal FETs Radio-Frequency MOSFETs Part Number Package Applications Electrical Characteristics (Ta 25C) PD IDSS ID (mA) (mW) (mA) VDS (V) |Yfs| (mS) Typ. Marking Equivalent Product (Leaded Type) SMQ 3SK291 USQ 3SK293 2.0 2.1 12.5 30 150 0 to 0.1 26 UF VHF/UHF-band radio-frequency amps 12.5 30 150 0 to 0.1 23.5 UV UHF-band radio-frequency amps 12.5 30 100 0 to 0.1 26 UF VHF/UHF-band radio-frequency amps 12.5 30 100 0 to 0.1 23.5 UV 1.25 3SK294 UHF-band radio-frequency amps 1.5 2.9 3SK292 2.9 Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 64 2011/9 SCE0004L Radio-Frequency Power MOSFETs Radio-Frequency Power MOSFETs Absolute Maximum Ratings (Tc 25C) Part Number RFM08U9X 2SK3075 2SK3074 RFM12U7X RFM01U7P 2SK3476 2SK3475 RFM04U6P 2SK4037 Package PD (W) ID (A) Min VDD (V) f (MHz) Pi (W) PW-X 36 20 5 7.5 9.6 520 0.5 PW-X 30 20 5 7.5 9.6 520 0.5 PW-MINI 30 3 1 0.63 9.6 520 0.02 1.0 PW-MINI UHF/VHF Professional radios PW-X * 20 4 11.5 7.2 520 3 1 1.0 7.2 520 0.1 20 20 3 7.0 7.2 520 0.5 0.02 20 3 1 0.63 7.2 520 PW-MINI 16 7 2 3.5 6.0 470 0.2 12 20 3 3.55 6.0 470 0.3 UHF/VHF Professional radios 10 0.5 0.5 0.2 6.0 849 0.02 10 20 3 2.24 4.5 470 0.1 FRS/GMRS 7.5 3 1 1.26 4.5 470 0.1 10 3 0.5 0.63 4.5 470 0.1 0.001 PW-MINI GMRS PW-X PW-MINI PW-MINI * 20 20 PW-MINI PW-X 2SK2854 2SK3079A 2SK3756 2SK3078A 2SK3077 RFM03U3CT RFM00U7U VDSS (V) PW-X * Applications Po (W) Test Conditions USQ Driver 10 0.25 0.1 0.032 4.8 915 RF-CST3 GMRS 16 7 2.5 2.3 3.6 520 0.1 USQ Driver 20 0.25 0.1 0.1 7.2 520 0.01 Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 65 *: New product 2011/9 SCE0004L IGBTs IGBTs (Discrete IGBTs) Absolute Maximum Ratings (Ta 25C) Part Number Applications Features Ic VCES (V) GT30J121 30 GT30J126 Power supplies High-speed 600 (and UPS/PFC/Motor) switching GT30J324 GT50J121 GT50J325 GT10Q101 GT10Q301 GT15Q102 GT15Q301 GT25Q102 GT25Q301 GT10J301 GT20J101 GT20J301 GT30J101 GT30J301 GT50J102 High 1200 ruggedness Motor drives (and UPS/PFC) High ruggedness GT30J122 Power factor correction GT30J122A GT40J121 DC (A) * Low frequency switching GT30J322 GT35J321 600 GT40J321 GT40J322 GT40J323 IH rice cookers, IH cooktops, Microwave ovens, Induction heating equipment AC 200 V Package Pc Ta = (W) Tc = 25C (W) 170 Pulsed 25C (A) 60 Type VCE(sat) Typ. @Ta 25C Circuit Configuration (Note) tf Typ. @Ta 25C (V) Ic (A) VGE (V) (s) Through-hole (1) 2.0 30 15 0.05 Isolation, TO-3P(N)IS Through-hole (1) 1.95 30 15 0.05 TO-3P(N) 60 90 30 60 170 TO-3P(N) Through-hole (2) 2.0 30 15 0.05 50 100 240 TO-3P(LH) Through-hole (1) 2.0 50 15 0.05 50 100 240 TO-3P(LH) Through-hole (2) 2.0 50 15 0.05 10 20 140 TO-3P(N) Through-hole (1) 2.1 10 15 0.16 10 20 140 TO-3P(N) Through-hole (2) 2.1 10 15 0.16 15 30 170 TO-3P(N) Through-hole (1) 2.1 15 15 0.16 15 30 170 TO-3P(N) Through-hole (2) 2.1 15 15 0.16 30 25 50 200 TO-3P(LH) Through-hole (1) 2.1 25 15 0.16 25 50 200 TO-3P(LH) Through-hole (2) 2.1 25 15 0.16 10 20 90 TO-3P(N) Through-hole (2) 2.1 10 15 0.15 20 40 130 TO-3P(N) Through-hole (1) 2.1 20 15 0.15 20 40 130 TO-3P(N) Through-hole (2) 2.1 20 15 0.15 30 60 155 TO-3P(N) Through-hole (1) 2.1 30 15 0.15 30 60 155 TO-3P(N) Through-hole (2) 2.1 30 15 0.15 50 100 200 TO-3P(LH) Through-hole (1) 2.1 50 15 0.15 Isolation, TO-3P(N)IS Through-hole (1) 2.1 50 15 0.25 30 100 75 30 100 120 TO-3P(N) Through-hole (1) 1.7 50 15 0.2 40 100 80 TO-3P(N)IS Isolation, Through-hole (1) 1.45 40 15 0.2 30 100 75 TO-3P(N)IS Isolation, Through-hole (2) 2.1 50 15 0.25 37 100 75 TO-3P(N)IS Isolation, Through-hole (2) 1.9 50 15 0.19 40 100 120 TO-3P(N) Through-hole (2) 2.0 40 15 0.11 40 100 120 TO-3P(N) Through-hole (2) 1.7 40 15 0.20 40 100 170 TO-3P(N) Through-hole (2) 2.0 40 15 0.06 (2) 1.45 40 15 0.2 Remarks Test Conditions Inductive load Partial switching converter Fast switching Resistive load Fast switching 40 100 80 Isolation, TO-3P(N)IS Through-hole 50 100 130 TO-3P(LH) Through-hole (2) 2.1 50 15 0.25 50 100 130 TO-3P(LH) Through-hole (2) 2.2 50 15 0.11 50 100 140 TO-3P(N) Through-hole (2) 1.9 50 15 0.19 50 100 200 TO-3P(N) Through-hole (2) 1.6 50 15 0.15 6th generation, Tj 175C 50 120 140 TO-3P(N) Through-hole (2) 2.0 50 15 0.1 Fast switching 60 120 200 TO-3P(LH) Through-hole (2) 1.55 60 15 0.30 Low VCE (sat) 60 120 170 TO-3P(LH) Through-hole (2) 1.9 60 15 0.16 60 120 170 TO-3P(LH) Through-hole Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. (2) 2.1 60 15 0.12 GT40J325 * GT50J322 GT50J322H GT50J327 GT50J341 * GT50J328 GT60J321 GT60J323 GT60J323H Current resonance 6th generation Fast switching Fast switching *: New product Note) (1) (2) Typical Built-in FRD Collector Gate (3) Collector Collector Gate Emitter Built-in Zener diode Gate Emitter Emitter 66 2011/9 SCE0004L IGBTs (Discrete IGBTs) (Continued) Absolute Maximum Ratings (Ta 25C) Ic Part Number Applications Features VCES (V) DC (A) Package Pc Ta = (W) Tc = 25C (W) Pulsed 25C (A) Type tf Typ. @Ta 25C VCE(sat) Typ. @Ta 25C Circuit Configuration (Note) (V) Ic (A) VGE (V) (s) Remarks Test Conditions GT15M321 15 30 55 TO-3P(N)IS Isolation, Through-hole (2) 1.8 15 15 0.20 For small power GT35MR21 * 35 100 82 TO-3P(N)IS Isolation, Through-hole (2) 1.6 35 15 0.20 6.5th generation 50 120 156 TO-3P(N) Through-hole (2) 2.1 60 15 0.25 50 100 230 TO-3P(N) Through-hole (2) 1.7 50 15 0.18 60 120 254 TO-3P(N) Through-hole (2) 1.7 60 15 0.11 50 120 156 TO-3P(N) Through-hole (2) 2.2 60 15 0.1 Fast switching 50 120 150 TO-3P(N) Through-hole (2) 1.9 60 15 0.11 6th generation 60 120 170 TO-3P(LH) Through-hole (2) 2.3 60 15 0.25 1050 50 100 230 TO-3P(N) Through-hole (2) 1.8 50 15 0.2 1200 40 80 230 TO-3P(N) Through-hole (2) 1.9 40 15 0.2 1500 40 80 230 TO-3P(N) Through-hole (2) 2.15 40 15 0.24 130 0.83 TSON-8 SMD (3) 3.0 130 2.5 1.5 150 0.83 TSON-8 SMD (3) 2.65 150 2.5 1.5 150 1.1 SOP-8 SMD (3) 2.3 150 4.0 1.6 200 1.9 SOP-8 SMD (3) 2.3 200 4.0 1.8 GT50M322 IH rice cookers, IH cooktops, Microwave ovens, Induction heating equipment AC100 V GT50MR21 * GT60M324 GT50N322A GT50N324 GT60N321 900 Voltage resonance 1000 GT50NR21 * IH rice cookers, IH cooktops, Microwave ovens, Induction heating equipment AC200 V GT40QR21 * GT40T321 * GT5G133 * 6.5th generation, Tj 175C 6th generation, Tj 175C 6.5th generation Tj 175C 6.5th generation, Tj 175C 6th generation, Tj 175C ICP 130 A @VGE 2.5V gate drive ICP 150 A @VGE 2.5V gate drive ICP 150 A @VGE 2.5V gate drive ICP 200 A @VGE 4.0V gate drive Digital still cameras, cell phone GT8G151 * Strobe flash (dimming 400 control) GT8G132 Digital still cameras, single lens reflex cameras GT10G131 Resistive load GT30F124 300 200 25 TO-220SIS Isolation, Through-hole (1) 2.3 120 15 0.15 6th generation GT45F127 300 200 26 TO-220SIS Isolation, Through-hole (1) 1.6 120 15 0.27 6th generation 330 200 25 TO-220SIS Isolation, Through-hole (1) 1.9 120 15 0.15 6th generation 330 200 26 TO-220SIS Isolation, Through-hole (1) 1.45 120 15 0.27 6th generation 360 200 140 TO-220SM (MXN) SMD (1) 1.9 120 15 0.17 6th generation 200 25 TO-220SIS Isolation, Through-hole (1) 2.5 120 15 0.23 6th generation 200 25 TO-220SIS Isolation, Through-hole (1) 2.1 120 15 0.16 6th generation 200 26 TO-220SIS Isolation, Through-hole (1) 1.7 120 15 0.37 6th generation TO-220SIS Isolation, Through-hole (1) 1.55 120 15 0.41 6th generation (1) 2.4 120 15 0.25 GT30F125 * GT45F128 * GT30F131 * PDP sustain, energy recovery and separation circuits PDP-TV GT30G124 GT30G125 * 430 GT45G127 GT45G128 * 200 26 Isolation, Through-hole Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. GT30J124 600 200 26 TO-220SIS 5th generation *: New product Note) (1) (2) Typical Built-in FRD Collector Gate (3) Collector Gate Emitte Built-in Zener diode Collector Gate Emitte Emitte 67 2011/9 SCE0004L Phototransistors Part Number TPS601A(F) Part Number with Rank Package Min (A) 100 TPS601A(A,F) 100 300 200 600 TPS601A(B,F) TO-18CAN with lens TPS601A(C,F) TPS610(F) TPS611(F) TPS616(F) TPS622(F) Half-Value Angle () Impermeable Applications to Visible Light 0.1 0.2 30 800 10 400 1200 5 100 0.1 0.1 24 800 8 5 30 0.1 0.1 24 900 8 20 150 0.1 0.1 24 800 30 0.1 0.1 24 900 30 0.1 0.1 24 870 15 TPS615(F) Electrical/Optical Characteristics (Ta 25C) Peak Light Current Dark Current Sensitive Wavelength Max Max VCE (V) E (mW/cm2) (nm) (A) (A) TPS615(B,F) 34 85 60 150 TPS615(BC,F) 34 150 10 75 TPS616(B,F) 17 42.5 30 75 TPS615(C,F) TPS616(C,F) 3 3 TPS616(BC,F) 17 75 27 TPS622(A,F) TPS622(B,F) Small side-view package 27 80 55 165 Note: E radiant incidence; VCE collector-emitter voltage Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 68 2011/9 SCE0004L Optoelectronic switches OVERSEAS SUBSIDIARIES AND AFFILIATES Toshiba America Electronic Components, Inc. Toshiba Electronics Europe GmbH Toshiba Electronics Asia, Ltd. s $aSSELDORF (EAD /FFICE s (ONG +ONG (EAD /FFICE 4EL &AX s )RVINE (EADQUARTERS 4EL &AX s &RANCE "RANCH 4EL &AX 4EL &AX 4EL &AX 4EL &AX s 3AN *OSE 4EL &AX s 7IXOM $ETROIT 4EL &AX s "LOOMINGTON 4EL &AX Toshiba Electronics Asia (Singapore) Pte. Ltd. 4EL &AX s 3HANGHAI 058) "RANCH 4EL &AX s (ANGZHOU /FFICE Toshiba Electronics Service (Thailand) Co., Ltd. 4EL &AX Toshiba Electronics Trading (Malaysia) Sdn. 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Toshiba Electronics Korea Corporation 4EL &AX 4EL &AX s 3EOUL (EAD /FFICE 4EL &AX s $AEGU /FFICE 4EL &AX Toshiba Electronics Taiwan Corporation s 4AIPEI (EAD /FFICE 4EL &AX 4OSHIBA #ORPORATION AND ITS SUBSIDIARIES AND AFFILIATES COLLECTIVELY h4/3()"!v RESERVE THE RIGHT TO MAKE CHANGES TO THE INFORMATION IN THIS DOCUMENT AND RELATED HARDWARE SOFTWARE AND SYSTEMS COLLECTIVELY h0RODUCTv WITHOUT NOTICE 4HIS DOCUMENT AND ANY INFORMATION HEREIN MAY NOT BE REPRODUCED WITHOUT PRIOR WRITTEN PERMISSION FROM 4/3()"! %VEN WITH 4/3()"!S WRITTEN PERMISSION REPRODUCTION IS PERMISSIBLE ONLY IF REPRODUCTION IS WITHOUT ALTERATIONOMISSION 4HOUGH 4/3()"! WORKS CONTINUALLY TO IMPROVE 0RODUCTgS QUALITY AND RELIABILITY 0RODUCT CAN MALFUNCTION OR FAIL #USTOMERS ARE RESPONSIBLE FOR COMPLYING WITH SAFETY STANDARDS AND FOR PROVIDING ADEQUATE DESIGNS AND SAFEGUARDS FOR THEIR HARDWARE SOFTWARE AND SYSTEMS WHICH MINIMIZE RISK AND AVOID SITUATIONS IN WHICH A MALFUNCTION OR FAILURE OF 0RODUCT COULD CAUSE LOSS OF HUMAN LIFE BODILY INJURY OR DAMAGE TO PROPERTY INCLUDING DATA LOSS OR CORRUPTION "EFORE CUSTOMERS USE THE 0RODUCT CREATE DESIGNS INCLUDING THE 0RODUCT OR INCORPORATE THE 0RODUCT INTO THEIR OWN APPLICATIONS CUSTOMERS MUST ALSO REFER TO AND COMPLY WITH A THE LATEST VERSIONS OF ALL RELEVANT 4/3()"! INFORMATION INCLUDING WITHOUT LIMITATION THIS DOCUMENT THE SPECIFICATIONS THE DATA SHEETS AND APPLICATION NOTES FOR 0RODUCT AND THE PRECAUTIONS AND CONDITIONS SET FORTH IN THE 4/3()"! 3EMICONDUCTOR 2ELIABILITY (ANDBOOK AND B THE INSTRUCTIONS FOR THE APPLICATION WITH WHICH THE 0RODUCT WILL BE USED WITH OR FOR #USTOMERS ARE SOLELY RESPONSIBLE FOR ALL ASPECTS OF THEIR OWN PRODUCT DESIGN OR APPLICATIONS INCLUDING BUT NOT LIMITED TO A DETERMINING THE APPROPRIATENESS OF THE USE OF THIS 0RODUCT IN SUCH DESIGN OR APPLICATIONS B EVALUATING AND DETERMINING THE APPLICABILITY OF ANY INFORMATION CONTAINED IN THIS DOCUMENT OR IN CHARTS DIAGRAMS PROGRAMS ALGORITHMS SAMPLE APPLICATION CIRCUITS OR ANY OTHER REFERENCED DOCUMENTS AND C VALIDATING ALL OPERATING PARAMETERS FOR SUCH DESIGNS AND APPLICATIONS TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. 0RODUCT IS INTENDED FOR USE IN GENERAL ELECTRONICS APPLICATIONS EG COMPUTERS PERSONAL EQUIPMENT OFFICE EQUIPMENT MEASURING EQUIPMENT INDUSTRIAL ROBOTS AND HOME ELECTRONICS APPLIANCES OR FOR SPECIFIC APPLICATIONS AS EXPRESSLY STATED IN THIS DOCUMENT 0RODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENT OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY ANDOR RELIABILITY ANDOR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE BODILY INJURY SERIOUS PROPERTY DAMAGE OR SERIOUS PUBLIC IMPACT h5NINTENDED 5SEv 5NINTENDED 5SE INCLUDES WITHOUT LIMITATION EQUIPMENT USED IN NUCLEAR FACILITIES EQUIPMENT USED IN THE AEROSPACE INDUSTRY MEDICAL EQUIPMENT EQUIPMENT USED FOR AUTOMOBILES TRAINS SHIPS AND OTHER TRANSPORTATION TRAFFIC SIGNALING EQUIPMENT EQUIPMENT USED TO CONTROL COMBUSTIONS OR EXPLOSIONS SAFETY DEVICES ELEVATORS AND ESCALATORS DEVICES RELATED TO ELECTRIC POWER AND EQUIPMENT USED IN FINANCE RELATED FIELDS $O NOT USE 0RODUCT FOR 5NINTENDED 5SE UNLESS SPECIFICALLY PERMITTED IN THIS DOCUMENT $O NOT DISASSEMBLE ANALYZE REVERSE ENGINEER ALTER MODIFY TRANSLATE OR COPY 0RODUCT WHETHER IN WHOLE OR IN PART 0RODUCT SHALL NOT BE USED FOR OR INCORPORATED INTO ANY PRODUCTS OR SYSTEMS WHOSE MANUFACTURE USE OR SALE IS PROHIBITED UNDER ANY APPLICABLE LAWS OR REGULATIONS 4HE INFORMATION CONTAINED HEREIN IS PRESENTED ONLY AS GUIDANCE FOR 0RODUCT USE .O RESPONSIBILITY IS ASSUMED BY 4/3()"! 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SALES REPRESENTATIVE FOR DETAILS AS TO ENVIRONMENTAL MATTERS SUCH AS THE 2O(3 COMPATIBILITY OF 0RODUCT 0LEASE USE 0RODUCT IN COMPLIANCE WITH ALL APPLICABLE LAWS AND REGULATIONS THAT REGULATE THE INCLUSION OR USE OF CONTROLLED SUBSTANCES INCLUDING WITHOUT LIMITATION THE %5 2O(3 $IRECTIVE 4/3()"! ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS )N ADDITION TO THE ABOVE THE FOLLOWING ARE APPLICABLE ONLY TO DEVELOPMENT TOOLS 4HOUGH 4/3()"! WORKS CONTINUALLY TO IMPROVE 0RODUCTS QUALITY AND RELIABILITY 0RODUCT CAN MALFUNCTION OR FAIL 5SE THE 0RODUCT IN A WAY WHICH MINIMIZES RISK AND AVOID SITUATIONS IN WHICH A MALFUNCTION OR FAILURE OF 0RODUCT COULD CAUSE LOSS OF HUMAN LIFE BODILY INJURY OR DAMAGE TO PROPERTY INCLUDING DATA LOSS OR CORRUPTION &OR USING THE 0RODUCT CUSTOMERS MUST ALSO REFER TO AND COMPLY WITH THE LATEST VERSIONS OF ALL RELEVANT 4/3()"! INFORMATION INCLUDING WITHOUT LIMITATION THIS DOCUMENT THE INSTRUCTION MANUAL THE SPECIFICATIONS THE DATA SHEETS FOR 0RODUCT 0RODUCT IS PROVIDED SOLELY FOR THE PURPOSE OF PERFORMING THE FUNCTIONAL EVALUATION OF A SEMICONDUCTOR PRODUCT 0LEASE DO NOT USE 0RODUCT FOR ANY OTHER PURPOSE INCLUDING WITHOUT LIMITATION EVALUATION IN HIGH OR LOW TEMPERATURE OR HUMIDITY AND VERIFICATION OF RELIABILITY $O NOT INCORPORATE 0RODUCT INTO YOUR PRODUCTS OR SYSTEM 0RODUCTS ARE FOR YOUR OWN USE AND NOT FOR SALE LEASE OR OTHER TRANSFER 2011 Semiconductor & Storage Products Company Website: http://www.semicon.toshiba.co.jp/eng 69 2011/9 SCE0004L