SEMICONDUCTOR GENERAL CATALOG
Transistors
Bipolar Small-Signal Tra nsistors
Junct ion FETs
Combination Products of Dif ferent Type Devices
MOSFETs
Bipolar Power Transistors
Radio-Frequency Bipolar Small-Signal Transistors
Radio-Frequency Small-Sign al FETs
Radio-Frequency Power MOSFETs
IGBTs
Phototransistors
1
2011/9 SCE0004L
Bipolar Sm all -S i gna l Tra nsistors
General-Purpose Transistors (Single)
(Surface-Mount Type)
CST3 VESM SSM USM UFM
0.6
1.0
1.2
1.2
0.8
1.6
1.6
0.8
2.1
2.0
1.25
2.1
2.0
1.7
(mm) (mm) (mm) (mm) (mm)
Classification VCEO
(V)
Max
IC
(mA)
Max
NPN PNP NPN PNP NPN PNP NPN PNP NPN PNP
100 2SC6026CT 2SA2154CT
50 150 2SC6026MFV 2SA2154MFV 2SC4738 2SA1832 TTC4116* TTA1586*
30 500 2SC4118 2SA1588
General-purpose
50 500
2SC4117 2SA1587
Low noise 120 100
12 400 2SC5376FV 2SA1955FV 2SC5376 2SA1955
12 500 2SC5233 2SA1954
15 800
25 800
30 800
10 2000
20 2000
20 1500
20 2500 2SC6133* 2SA2214*
30 3000 2SA2215*
50 1000 2SC6134*
50 1700 2SC6135*
High current
50 2500
2SA2195*
2SC6100*
Strobe 10
5000
(3000)
High breakdown
voltage 80 300
High hFE 50 150
Muting 20 300 2SC4213
High-speed
switching 15 200
High-voltage
switching 200 50
250 50 High breakdown
voltage 300 100
Darlington 40 300
For the PNP transistors, t he minus sign () indicating a negative voltage is omitted.
The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any com
2
2011/9 SCE0004L
S-MINI
2.5
2.9
1.5
(mm)
NPN PNP
2SC2712 2SA1162
2SC2859 2SA1182
2SC3325 2SA1313
2SC2713 2SA1163
2SC3324 2SA1312
2SC5232 2SA1953
2SA1362
2SC3265 2SA1298
2SA1621
2SA1620
2SC3326
2SC3138
2SC4497 2SA1721
*: New product
3
2011/9 SCE0004L
General-Purpose Transistors (D ual) Dual Type
CST6 fS6 ESV USV SMV
1.0
0.9
1.0
1.0
0.8
1.6
1.6
1.2
2.1
2.0
1.25
2.8
2.9
1.6
(mm) (mm) (mm) (mm) (mm)
Classification VCEO
(V)
Max
IC
(mA)
Max
NPN PNP NPN PNP NPN PNP PNP NPN NPN PNP NPN PNP PNP NPN
(HN2B26CT) (HN1C26FS) (HN1A26FS) 2SA1873
(▲18) ** (▲10) (▲7) (HN1B26FS) HN4B01JE 2SC4944 (▲1) 2SC4207 2SA1618
(HN2C26FS) (HN2A26FS) (▲9) (▲6) (▲2) HN4A56JU (▲2) (▲1)
(
▲12) (▲11) (▲4)
50 150
(100)
HN4B04J
30 500
(▲3) *
General
-purpose
50 500
HN4C06J HN4A06J
(▲2) (▲1) HN4B06J
HN4C51J HN4A51J (▲3)
Low noise 120 100
(▲5) (▲4)
HN4C05JU
12 400
(▲2)
12 500
15 800
30 800
10 2000
High current
20 2000
Strobe 10 5000
Hig h br eak down
volt age 80 300
High hFE 50 150
Muting 20 300
High-speed
switching 15 200
High-voltage
switching 200 50
250 50
Hig h br eak down
volt age 300 100
Darlington 40 300
For the PNP transist ors, t he minus sign () indicating a negative voltage is omitted.
The ratings enclosed in parenthesis are for those devices whose part numbers are enclosed in parentheses.
The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
Internal Connections
Number of Pins ▲1 ▲2 ▲3 ▲4 ▲5 ▲6
5
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
▲7 ▲8 ▲9 ▲10 ▲11 ▲12
6
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
▲13 ▲14 ▲15 ▲16 ▲17 ▲18
6
Q1
Q2
Q2
Q1
Q1
Q2
Q1
Q2
Q2
Q1
Q1
Q2
The internal connection diagrams only show the general configurations of the circuits.
4
2011/9 SCE0004L
ES6 US6 SM6
1.6
1.6
1.2
2.1
2.0
1.25
2.8
2.9
1.6
(mm) (mm) (mm)
NPN PNP PNP NPN NPN PNP PNP NPN NPN PNP PNP NPN
HN1C01FE HN1C01FU HN1B01FU
(▲10) HN1A01FE (▲10) HN1A01FU (▲8) HN1A01F HN1B01F
HN2C01FE (▲7) HN1B04FE HN2C01FU (▲7) HN1B04FU HN1C01F (▲7) (▲8)
(▲12) HN2A01FE (▲9) (▲12) HN2A01FU (▲9) (▲10) HN3A56F HN3B01F
HN3C67FE (▲11) HN3C56FU (▲11) HN3B02FU (▲16) (▲13)
(▲17) (▲15) (▲14)
HN1B04F
(▲8)
HN1C07F HN1A07F
(▲10) (▲7)
HN3C51F HN3A51F
(▲15) (▲16)
HN1C05FE
(▲10)
HN1A02F
(▲7)
HN1C03FU HN1C03F
(▲10) (▲10)
HN3C61FU
(▲15)
*: New produc t
**: Under development
5
2011/9 SCE0004L
Bias Resistor Built-in Transistors (Single, General-Purpose)
VCEO(V) 20 50
Ratings
IC(mA) 50 100
CST3 CST6 CST3 VESM ESM
Internal
Resistors
(k)
0.6
1.0
(mm)
1.0
0.9
(mm)
0.6
1.0
(mm)
1.2
1.2
0.8
(mm)
1.6
1.6
0.85
(mm)
R1 R2 NPN PNP NPN PNP NPN PNP NPN PNP NPN PNP NPN PNP
4.7 4.7 RN1101CT RN2101CT RN1961CT RN2961CT RN1101ACT RN2101ACT RN1101MFV RN2101MFV RN1101F RN2101F
10 10 RN1102CT RN2102CT RN1962CT RN2962CT RN1102ACT RN2102ACT RN1102MFV RN2102MFV RN1102F RN2102F
22 22 RN1103CT RN2103CT RN1963CT RN2963CT RN1103ACT RN2103ACT RN1103MFV RN2103MFV RN1103F RN2103F
47 47 RN1104CT RN2104CT RN1964CT RN2964CT RN1104ACT RN2104ACT RN1104MFV RN2104MFV RN1104F RN2104F
2.2 47 RN1105CT RN2105CT RN1965CT RN2965CT RN1105ACT RN2105ACT RN1105MFV RN2105MFV RN1105F RN2105F
4.7 47 RN1106CT RN2106CT RN1966CT RN2966CT RN49P2ACT RN1106ACT RN2106ACT RN1106MFV RN2106MFV RN1106F RN2106F
10 47 RN1107CT RN2107CT RN1967CT RN2967CT RN1107ACT RN2107ACT RN1107MFV RN2107MFV RN1107F RN2107F
22 47 RN1108CT RN2108CT RN1968CT RN2968CT RN1108ACT RN2108ACT RN1108MFV RN2108MFV RN1108F RN2108F
47 22 RN1109CT RN2109CT RN1969CT RN2969CT RN1109ACT RN2109ACT RN1109MFV RN2109MFV RN1109F RN2109F
4.7 RN1110CT RN2110CT RN1970CT RN2970CT RN1110ACT RN2110ACT RN1110MFV RN2110MFV RN1110F RN2110F
10 RN1111CT RN2111CT RN1971CT RN2971CT RN1111ACT RN2111ACT RN1111MFV RN2111MFV RN1111F RN2111F
22 RN1112CT RN2112CT RN1972CT RN2972CT RN1112ACT RN2112ACT RN1112MFV RN2112MFV RN1112F RN2112F
47 RN1113CT RN2113CT RN1973CT RN2973CT RN1113ACT RN2113ACT RN1113MFV RN2113MFV RN1113F RN2113F
1 10 RN1114MFV RN2114MFV RN1114F RN2114F
2.2 10 RN1115MFV RN2115MFV RN1115F RN2115F
4.7 10 RN1116MFV RN2116MFV RN1116F RN2116F
10 4.7 RN1117MFV RN2117MFV RN1117F RN2117F
47 10 RN1118MFV RN2118MFV RN1118F RN2118F
1 RN1119MFV RN2119MFV
100 100 RN1130MFV RN2130MFV RN1130F RN2130F
100 RN1131MFV RN2131MFV RN1131F RN2131F
200 RN1132MFV RN2132MFV RN1132F RN2132F
For the PNP transist ors, t he minus sign () indicating a negative voltage is omitted.
The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
(Sin gl e, High-Current/Muting Switch)
High Current Muting
VCEO(V) 50 20
Ratings
IC(mA) 800 300
S-MINI S-MINI
Internal
Resistors
(k)
2.5
2.9
1.5
(mm)
2.5
2.9
1.5
(mm)
R1 R2 NPN PNP NPN
1 1 RN1421 RN2421
2.2 2.2 RN1422 RN2422
4.7 4.7 RN1423 RN2423
10 10 RN1424 RN2424
0.47 10 RN1425 RN2425
1 10 RN1426 RN2426
2.2 10 RN1427 RN2427
5.6 RN1441
10 RN1442
22 RN1443
2.2 RN1444
For the PNP transistors, t he minus sign () indicating a negative voltage is omitted.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
6
2011/9 SCE0004L
50
100
SSM USM S-MINI
1.6
1.6
0.8
(mm)
2.1
2.0
1.25
(mm)
2.5
2.9
1.5
(mm)
NPN PNP NPN PNP NPN PNP
RN1101 RN2101 RN1301 RN2301 RN1401 RN2401
RN1102 RN2102 RN1302 RN2302 RN1402 RN2402
RN1103 RN2103 RN1303 RN2303 RN1403 RN2403
RN1104 RN2104 RN1304 RN2304 RN1404 RN2404
RN1105 RN2105 RN1305 RN2305 RN1405 RN2405
RN1106 RN2106 RN1306 RN2306 RN1406 RN2406
RN1107 RN2107 RN1307 RN2307 RN1407 RN2407
RN1108 RN2108 RN1308 RN2308 RN1408 RN2408
RN1109 RN2109 RN1309 RN2309 RN1409 RN2409
RN1110 RN2110 RN1310 RN2310 RN1410 RN2410
RN1111 RN2111 RN1311 RN2311 RN1411 RN2411
RN1112 RN2112 RN1312 RN2312 RN1412 RN2412
RN1113 RN2113 RN1313 RN2313 RN1413 RN2413
RN1114 RN2114 RN1314 RN2314 RN1414 RN2414
RN1115 RN2115 RN1315 RN2315 RN1415 RN2415
RN1116 RN2116 RN1316 RN2316 RN1416 RN2416
RN1117 RN2117 RN1317 RN2317 RN1417 RN2417
RN1118 RN2118 RN1318 RN2318 RN1418 RN2418
7
2011/9 SCE0004L
Bias Resistor Built-in Transistors (Dual, General-Purpose (5 Pin) )
A
bsolute Maximum
Ratings Internal Resistors ESV USV
VCEO IC Q1 Q2
1.6
1.6
1.2
(mm)
2.1
2.0
1.25
(mm)
NPN x 2 PNP x 2 NPN PNP NPN x 2 PNP x 2 NPN PNP
(k) (k)
R1 R2 R1 R2
Q1
Q2
R2
R2
R1
R1
Q1
Q2
R2
R2
R1
R1
R2
R2
R1
R1
Q1
Q2
Q1
Q2
R2
R2
R1
R1
Q1
Q2
R2
R2
R1
R1
R2
R2
R1
R1
Q1
Q2
Classification
(V) (mA)
Common emitter Common emitter Collector-base
connection Common emitter Common emitter Collector-base
connection
4.7 4.7 4.7 4.7 RN1701JE RN2701JE RN1701 RN2701
10 10 10 10 RN1702JE RN2702JE RN47A3JE RN1702 RN2702 RN47A3
22 22 22 22 RN1703JE RN2703JE RN47A2JE RN1703 RN2703 RN47A2
47 47 47 47 RN1704JE RN2704JE RN1704 RN2704
2.2 47 2.2 47 RN1705JE RN2705JE RN1705 RN2705
4.7 47 4.7 47 RN1706JE RN2706JE RN1706 RN2706
10 47 10 47 RN1707JE RN2707JE RN1707 RN2707
22 47 22 47 RN1708JE RN2708JE RN1708 RN2708
47 22 47 22 RN1709JE RN2709JE RN1709 RN2709
4.7 4.7 RN1710JE RN2710JE RN47A1JE RN1710 RN2710 RN47A1
10 10 RN1711JE RN2711JE RN1711 RN2711
22 22 RN2712JE
47 47 RN2713JE
1 10 1 10 RN2714
2.2 10 2.2 10
4.7 10 4.7 10
10 4.7 10 4.7
47 10 47 10
47 47 10 47 RN47A4JE RN47A4
47 47 4.7 10 RN47A5JE RN47A5
100 100 100 100 RN47A6
50 100
10 10 47 10
RN47A7
Q1: 50 Q1: 100
Q2: 12 Q2: 100
(Lowsat) 10 10 4.7 10
RN47A7JE
Q1: 50 Q1: 100
General-purpose
Q2: 30 Q2: 100
(High hFE) 10 10 10 47
RN47A8JE
Muting 20 300 2.2 2.2
For the PNP transistors, t he minus sign () indicating a negative voltage is omitted.
The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
8
2011/9 SCE0004L
SMV
2.8
2.9
1.6
(mm)
NPN x 2 PNP x 2 NPN PNP
Q1
Q2
R2
R2
R1
R1
Q1
Q2
R2
R2
R1
R1
R2
R2
R1
R1
Q1
Q2
Common emitter Common emitter Collector-base
connection
RN1501 RN2501
RN1502 RN2502
RN1503 RN2503
RN1504 RN2504
RN1505 RN2505
RN1506 RN2506
RN1507 RN2507
RN1508 RN2508
RN1509 RN2509
RN1510 RN2510
RN1511 RN2511
RN1544
The internal connection diagrams only show the general configurations of the circuits.
9
2011/9 SCE0004L
(Dual, General-Purpose (6 P i n) )
fS6
1.0
1.0
0.8
Absolute
Maximum
Ratings Internal Resistors NPN PNP PNP NPN Absolute
Maximum
Ratings Internal Resistors NPN x 2 PNP x 2
VCEO IC Q1 Q2 VCEO IC Q1 Q2
(k) (k) (k) (k)
R1 R2 R1 R2 R1 R2 R1 R2
Classification
(V) (mA)
Q1
Q2
R2
R2
R1
R1
Q1
Q2
R2
R2
R1
R1
Q2
Q1
R2
R2
R1
R1
(V) (mA)
Q1
Q2
R2
R2
R1
R1
Q1
Q2
R2
R2
R1
R1
4.7 4.7 4.7 4.7 RN1901AFS RN2901AFS RN4981AFS 4.7 4.7 4.7 4.7 RN1901FS RN2901FS
10 10 10 10 RN1902AFS RN2902AFS RN4982AFS 10 10 10 10 RN1902FS RN2902FS
22 22 22 22 RN1903AFS RN2903AFS RN4983AFS 22 22 22 22 RN1903FS RN2903FS
47 47 47 47 RN1904AFS RN2904AFS RN4984AFS 47 47 47 47 RN1904FS RN2904FS
2.2 47 2.2 47 RN1905AFS RN2905AFS RN4985AFS 2.2 47 2.2 47 RN1905FS RN2905FS
4.7 47 4.7 47 RN1906AFS RN2906AFS RN4986AFS 4.7 47 4.7 47 RN1906FS RN2906FS
10 47 10 47 RN1907AFS RN2907AFS RN4987AFS 10 47 10 47 RN1907FS RN2907FS
22 47 22 47 RN1908AFS RN2908AFS RN4988AFS 22 47 22 47 RN1908FS RN2908FS
47 22 47 22 RN1909AFS RN2909AFS RN4989AFS 47 22 47 22 RN1909FS RN2909FS
4.7 4.7 RN1910AFS RN2910AFS RN4990AFS 4.7 4.7 RN1910FS RN2910FS
10 10 RN1911AFS RN2911AFS RN4991AFS 10 10 RN1911FS RN2911FS
22 22 RN1912AFS RN2912AFS RN4992AFS 22 22 RN1912FS RN2912FS
47 47 RN1913AFS RN2913AFS RN4993AFS 47 47 RN1913FS RN2913FS
1 10 1 10 1 10 1 10
2.2 10 2.2 10 2.2 10 2.2 10
4.7 10 4.7 10 4.7 10 4.7 10
10 4.7 10 4.7 10 4.7 10 4.7
47 10 47 10 47 10 47 10
2.2 47 22 47 2.2 47 22 47
2.2 47 47 47 2.2 47 47 47
22 22 10 10 22 22 10 10
General
-purpose 50 80
47 47 4.7 47
20 50
47 47 4.7 47
4.7 4.7 4.7 4.7
10 10 10 10
General
-purpose
(Hi)
40
(30) 100 22 22
40
(30) 100 22 22
Power SW 50
(12) 100
(500) 10 47 2.0 10
50
(12) 100
(500) 10 47 2.0 10
For the PNP transist ors, t he minus sign () indicating a negative voltage is omitted.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
10
2011/9 SCE0004L
(mm)
NPN PNP Absolute
Maximum
Ratings Internal Resistors NPN PNP
VCEO IC Q1 Q2
(k) (k)
R1 R2 R1 R2
Q1
Q2
R2
R2
R1
R1
(V) (mA)
Q1
Q2
R2
R2
R1
R1
RN4981FS 4.7 4.7 4.7 4.7
RN4982FS 10 10 10 10
RN4983FS 22 22 22 22
RN4984FS 47 47 47 47 RN49J2AFS
RN4985FS 2.2 47 2.2 47
RN4986FS 4.7 47 4.7 47
RN4987FS 10 47 10 47
RN4988FS 22 47 22 47
RN4989FS 47 22 47 22
RN4990FS 4.7 4.7
RN4991FS 10 10
RN4992FS 22 22
RN4993FS 47 47
1 10 1 10
2.2 10 2.2 10
4.7 10 4.7 10
10 4.7 10 4.7
47 10 47 10
2.2 47 22 47
2.2 47 47 47
22 22 10 10
RN49A6FS
50 50
47 47 4.7 47
4.7 4.7
10 10
40
(30) 100 22 22
50
(12) 100
(500) 10 47 2.0 10
The internal connection diagrams only show the general configurations of the circuits.
11
2011/9 SCE0004L
(Dual, General-Purpose (6 P i n) ) (Continu ed)
Absolute
Maximum
Ratings Internal Resistors ES6
VCEO IC Q1 Q2
1.6
1.6
1.2
(mm)
NPN x 2 PNP x 2 NPN x 2 PNP x 2 PNP NPN NPN PNP NPN PNP
(k) (k)
R1 R2 R1 R2
Classification
(V) (mA)
Q1
Q2
R2
R2
R1
R1
Q1
Q2
R2
R2
R1
R1
Q1
Q2
R2
R2
R1
R1
Q1
Q2
R2
R2
R1
R1
Q1
Q2
R2
R2
R1
R1
Q1
Q2
R2
R2
R1
R1
Q1
Q2
R2
R2
R1
R1
4.7 4.7 4.7 4.7 RN1901FE RN2901FE RN1961FE RN2961FE RN4901FE RN4981FE
10 10 10 10 RN1902FE RN2902FE RN1962FE RN2962FE RN4902FE RN4982FE RN4962FE
22 22 22 22 RN1903FE RN2903FE RN1963FE RN2963FE RN4903FE RN4983FE
47 47 47 47 RN1904FE RN2904FE RN1964FE RN2964FE RN4904FE RN4984FE
2.2 47 2.2 47 RN1905FE RN2905FE RN1965FE RN2965FE RN4905FE RN4985FE
4.7 47 4.7 47 RN1906FE RN2906FE RN1966FE RN2966FE RN4906FE RN4986FE
10 47 10 47 RN1907FE RN2907FE RN1967FE RN2967FE RN4907FE RN4987FE
22 47 22 47 RN1908FE RN2908FE RN1968FE RN2968FE RN4908FE RN4988FE
47 22 47 22 RN1909FE RN2909FE RN1969FE RN2969FE RN4909FE RN4989FE
4.7 4.7 RN1910FE RN2910FE RN1970FE RN2970FE RN4910FE RN4990FE
10 10 RN1911FE RN2911FE RN1971FE RN2971FE RN4911FE RN4991FE
22 22
47 47
1 10 1 10
2.2 10 2.2 10
4.7 10 4.7 10
10 4.7 10 4.7
47 10 47 10
2.2 47 22 47 RN49A1FE
2.2 47 47 47
22 22 10 10
General
-purpose 50 100
10 10 10
For the PNP transist ors, t he minus sign () indicating a negative voltage is omitted. The internal connection diagrams only show the general configurations of the circuits.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
12
2011/9 SCE0004L
Absolute
Maximum
Ratings Internal Resistors US6
VCEO IC Q1 Q2
2.1
2.0
1.25
(mm)
NPN x 2 PNP x 2 NPN x 2 PNP x 2 PNP NPN NPN PNP
(k) (k)
R1 R2 R1 R2
Classification
(V) (mA)
Q1
Q2
R2
R2
R1
R1
Q1
Q2
R2
R2
R1
R1
Q1
Q2
R2
R2
R1
R1
Q1
Q2
R2
R2
R1
R1
Q1
Q2
R2
R2
R1
R1
Q1
Q2
R2
R2
R1
R1
4.7 4.7 4.7 4.7 RN1901 RN2901 RN1961 RN2961 RN4901 RN4981
10 10 10 10 RN1902 RN2902 RN1962 RN2962 RN4902 RN4982
22 22 22 22 RN1903 RN2903 RN1963 RN2963 RN4903 RN4983
47 47 47 47 RN1904 RN2904 RN1964 RN2964 RN4904 RN4984
2.2 47 2.2 47 RN1905 RN2905 RN1965 RN2965 RN4905 RN4985
4.7 47 4.7 47 RN1906 RN2906 RN1966 RN2966 RN4906 RN4986
10 47 10 47 RN1907 RN2907 RN1967 RN2967 RN4907 RN4987
22 47 22 47 RN1908 RN2908 RN1968 RN2968 RN4908 RN4988
47 22 47 22 RN1909 RN2909 RN1969 RN2969 RN4909 RN4989
4.7 4.7 RN1910 RN2910 RN1970 RN2970 RN4910 RN4990
10 10 RN1911 RN2911 RN1971 RN2971 RN4911 RN4991
22 22
47 47 RN1973
1 10 1 10
2.2 10 2.2 10 RN2975
4.7 10 4.7 10
10 4.7 10 4.7
47 10 47 10
2.2 47 22 47 RN49A1
2.2 47 47 47 RN49A2
22 22 10 10
General
-purpose 50 100
10 10 10
For the PNP transist ors, t he minus sign () indicating a negative voltage is omitted. The internal connection diagrams only show the general configurations of the circuits.
The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
13
2011/9 SCE0004L
(Dual, General-Purpose (6 P i n) ) (Continu ed)
Absolute
Maximum
Ratings Internal Resistors SM6
VCEO IC Q1 Q2
2.8
2.9
1.6
(mm)
NPN x 2 PNP x 2 NPN x 2 PNP NPN
(k) (k)
R1 R2 R1 R2
Classification
(V) (mA)
Q1
Q2
R2
R2
R1
R1
Q1
Q2
R2
R2
R1
R1
Q1
Q2
R2
R2
R1
R1
Q1
Q2
R2
R2
R1
R1
4.7 4.7 4.7 4.7 RN1601 RN2601 RN4601
10 10 10 10 RN1602 RN2602 RN4602
22 22 22 22 RN1603 RN2603 RN4603
47 47 47 47 RN1604 RN2604 RN4604
2.2 47 2.2 47 RN1605 RN2605 RN4605
4.7 47 4.7 47 RN1606 RN2606 RN4606
10 47 10 47 RN1607 RN2607 RN4607
22 47 22 47 RN1608 RN2608 RN4608
47 22 47 22 RN1609 RN2609 RN4609
4.7 4.7 RN1610 RN2610 RN4610
10 10 RN1611 RN2611 RN4611
22 22 RN4612
47 47 RN1673
1 10 1 10
2.2 10 2.2 10
4.7 10 4.7 10
10 4.7 10 4.7
47 10 47 10
2.2 47 22 47
2.2 47 47 47
22 22 10 10 RN46A1
General
-purpose 50 100
10 10 10
For the PNP transist ors, t he minus sign () indicating a negative voltage is omitted. The internal connection diagrams only show the general configurations of the circuits.
The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
14
2011/9 SCE0004L
Junction FETs
Junction FETs (Surface-Mount Type) Package
S-MINI (SC-59) USM (SC-70)
2.5
2.9
1.5
(mm)
2.1
2.0
1.25
(mm)
Classification VGDS (V)
Max IG (mA)
Max IDSS (mA) Yfs(mS)
Min
Nch Pch Nch Pch
50 10 0.3 to 6.5 1.2 2SK208 2SK879
50 10 1.2 to 14 1 2SJ106 2SJ144
General-purpose
50 10 1.2 to 14 4 2SK209 2SK880
The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
(Surface-Mount Type) (Electret Condense Microphone) Package
VESM
Characteristics VGDS (V)
Max IG (mA)
Max IDSS Rank
(A) Yfs(mS)
Min Ciss (pF)
Typ.
1.2
0.8
1.2
0.5
(mm)
A 80 to 200
Hi gh gain
Low THD
Low Noise
Small Ciss
20 10
B 170 to 300 0.55 3.6
2SK3582MFV
A 140 to 240
Hi gh gain
Low THD
Small Ciss
20 10
B 210 to 350 0.9 3.5
2SK3857MFV
A 140 to 240
AK 100 to 250
B 210 to 350
BK 210 to 400
Hi gh gain
Small Ciss 20 10
C 320 to 500
1.35 4.0
2SK4059MFV
A 140 to 240 Very Low Noise
Small Ciss 20 10
B 210 to 350 0.9 1.8
TTK101MFV *
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product
Junction FETs (Dual) (Surface-Mount Type) Package
SMV USV
2.8
2.9
1.6
(mm)
2.1
2.0
1.25
(mm)
Classification VGDS (V) IG (mA) IDSS (m A) Yfs(mS)
Min
Nch x 2 Pch x 2 Nch x 2 Pch x 2
Internal Connections
General-purpose 50 10 1.2 to 14 4 2SK2145 2SK3320
Q2
Q1
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
The internal connection diagrams only show the general configurations of the circuits.
15
2011/9 SCE0004L
Combination Products of Di ff erent Type Devices
Combinat ion Products of D ifferent Type Devices (5-Pin Packages (SMV), 6-Pin Packages (ES6, US6, SM6) )
Part Number Ratings
ES6 Package
1.6
1.6
1.2
US6 Package
2.1
2.0
1.25
Internal Connections
(mm) (mm)
Component Devices Breakdown
Voltage
(V)
Current
(mA) Features
Q1 2SA1955 VCEO 12 IC 400 PNP Low VCE(SAT),
suitable for power supply switches
HN7G01FU Q2 2SK1829 VDS 20 ID 50
2.5-V gate drive
(Vth 1.5 V max),
Ron 20 typ .
Q1 2SA1955 VCEO 12 IC 400 PNP Low VCE(SAT),
suitable for power supply switches
HN7G01FE Q2 SSM3K03FE VDS 20 ID 50
2.5-V gate drive
(Vth 1.3 V max),
Ron 4 typ.
Q1 2SA1955 VCEO 12 IC 400 PNP Low VCE(SAT),
suitable for power supply switches
PNP Nch
Q1
Q2
HN7G03FU
Q2 SSM3K04FU VDS 20 ID 100
Internal 1- M resistor (R GS)
2.5-V gate drive
(Vth 1.3 V max), Ron 4 typ.
Q1 RN2310 VCEO 50 IC 100 PNP (Inter nal resi ste rs) ,
R 4.7 k
HN7G02FU
Q2 2SK1829 VDS 20 ID 50
2.5-V gate drive
(Vth 1.5 V max),
Ron 20 typ .
Q1 RN2310 VCEO 50 IC 100 PNP (Inter nal res iste rs),
R 4.7 k
PNP (BRT) Nch
Q1
Q2
R
HN7G02FE Q2 SSM3K03FE VDS 20 ID 50
2.5-V gate drive
(Vth 1.3 V max),
Ron 4 typ.
Q1 RN2101 VCEO 50 IC 100 PNP (Inter nal resi ste rs) ,
R1 4. 7 k,
R2 4. 7 k
PNP (BRT) Nch
Q2
Q1
R1
R2
HN7G05FU
Q2 2SK1830 VDS 20 ID 50
2.5-V gate drive
(Vth 1.5 V max),
Ron 20 typ .
The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. The internal connection diagrams only show the general configurations of the circuits.
16
2011/9 SCE0004L
Combinat ion Products of D ifferent Type Devices (5-Pin Packages (SMV), 6-Pin Packages (ES6, US6, SM6) ) (Continued)
Part Number Ratings
ES6 Package
1.6
1.6
1.2
SMV Package
2.8
2.9
1.6
SM6 Package
2.8
2.9
1.6
Internal Conne ctions
(mm) (mm) (mm)
Component Devices Breakd own
Volt a ge
(V)
Current
(mA) Features
Q1 RN1104F VCEO 50 IC 100
NPN
(Internal resisters),
R1 47 k,
R2 47 k
NPN (BRT) Nch
Q2
Q1
R1
R2
HN7G09FE
Q2 SSM3K15FS VDS 30 ID 100
2.5-V gate drive
(Vth 1.5 V max),
Ron 4 typ..
Q1 2SC5376F VCEO 12 IC 400
NPN Low VCE(SAT),
suitable for power supply switches
NPN Nch
Q2
Q1
HN7G10FE
Q2 SSM3K03FE VDS 20 ID 50
2.5-V gate drive
(Vth 1.3 V max),
Ron 4 typ.
Q1 1SS352 VR 80 IO 100 Standard high-speed switc hing
HN2E01F Q2 2SC4666 VCEO 50 IC 150 High-hFE-type NPN
Q1 1SS352 VR 80 IO 100 Standard high-speed switc hing
Independent
small-signal diode
NPN
Q1
Q2
HN2E02F Q2 2SC4116 VCEO 50 IC 150 General-purpose NPN transistor
Q1 2SA1587 VCEO 120 IC 100 High breakdown voltage PNP
Independent
PNP small-si gnal diode
Q1
Q2
HN2E04F
Q2 1SS352 VR 80 IO 100 Standard high-speed switc hing
Q1 RN2304 VCEO 50 IC 100
PNP
(Internal resisters),
R1 47 k,
R2 47 k
Independent
BRT (PNP)
small-signal diode
Q2
Q1
R1
R2
HN2E05J
Q2 1SS352 VR 80 IO 100 Standard high-speed switc hing
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. T he internal connection diagrams only show the general configurations of the circ uits.
17
2011/9 SCE0004L
MOSFETs
Small- Signal MOSFETs (Single-Type)
Absolute
Maximum Ratings Package
CST3 VESM SSM USM (SC-70) UFM S-MINI (SC-59)
0.38
0.6
1.0
0.35
1.2
1.2
0.8
1.6
1.6
0.8
2.1
2.0
1.25
2.1
2.0
1.7
2.5
2.9
1.5
Polarity
VDDS
(V) VGSS
(V) ID
(mA)
(mm) (mm) (mm) (mm) (mm) (mm)
20 10 200 SSM3K37CT * SSM3K37FS *
20 10 250 SSM3K37MFV *
20 10 100 SSM3K16FU
20 10 180 SSM3K35CT SSM3K35MFV SSM3K35FS
20 10 500 SSM3K36MFV SSM3K36FS SSM3K36TU
20 10 500 SSM3K43FS
#
*
30 20 100 SSM3K15F
30 20 100 SSM3K15ACT * SSM3K15AMFV * SSM3K15AFS * SSM3K15AFU *
30 20 100 SSM3K44MFV # * SSM3K44FS
#
*
30 20 200 2SK2009
30 20 400 SSM3K09FU
50 7 100 SSM3K17FU
60 20 200 SSM3K7002AFU SSM3K7002AF
60 20 200 SSM3K7002BFS * SSM3K7002BFU * SSM3K7002BF *
N-ch
60 20 200 2SK1062
20 8 330 SSM3J36MFV SSM3J36FS SSM3J36TU
20 10 100 SSM3J16CT SSM3J16FV SSM3J16FS SSM3J16FU
20 10 100 SSM3J35CT SSM3J35MFV SSM3J35FS
30 20 100 SSM3J15CT SSM3J15FV SSM3J15FS SSM3J15FU SSM3J15F
30 20 200 2SJ305
30 20 200 SSM3J09FU
50 7 50 2SJ344 2SJ343
P-ch
60 20 200 2SJ168
#: High ESD protection
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
18
2011/9 SCE0004L
Vth
(V) Ron
()
Min Max Typ. Max
@VGS
(V)
ton
(ns)
Typ.
toff
(ns)
Typ.
0.35 1.0 3.07 5.6 1.5 18 36
0.35 1.0 3.07 5.6 1.5 18 36
0.6 1.1 5.2 15 1.5 70 125
0.4 1.0 5 20 1.2 115 300
0.35 1.0 0.95 1.52 1.5 30 75
0.35 1.0 0.95 1.52 1.5 30 75
0.8 1.5 4 7 2.5 50 180
0.8 1.5 3.5 6.0 2.5 5.5 35
0.8 1.5 4.0 7.0 2.5 50 200
0.5 1.5 1.2 2.0 2.5 60 120
1.1 1.8 0.8 1.2 4 72 68
0.9 1.5 22 40 2.5 100 40
1.0 2.5 1.8 3.3 4.5 3 7
1.5 3.1 2.1 3.3 4.5 3.3 14.5
2.0 3.5 0.6 1.0 10 14 75
0.3 1.0 2.23 3.60 1.5 90 200
0.6 1.1 18 45 1.5 130 190
0.4 1.0 11 44 1.2 175 251
1.1 1.7 14 32 2.5 65 175
0.5 1.5 2.4 4.0 2.5 60 150
1.1 1.8 3.3 4.2 4 85 85
0.8 2.5 20 50 4 150 130
2.0 3.5 1.3 2.0 10 14 100
*: New product
19
2011/9 SCE0004L
Small- Signal MOSFETs (Dual Type)
Absolute
Maximum Ratings Package
ESV ES6 USV US6 UF6 Vth (V) Ron
()
1.6
1.6
1.2
1.6
1.6
1.2
2.1
2.0
1.25
2.1
2.0
1.25
2.1
2.0
1.7
Polarity
VDDS
(V) VGSS
(V) ID
(mA)
(mm) (mm) (mm) (mm) (mm)
Internal FETs
Min Max Typ. Max
@V
GS
(V)
20 10 100 SSM5N16FE ▲1 SSM5N16FU ▲1 SSM3K16FU x 2 0.6 1.1 5.2 15 1.5
20 10 250 SSM6N37FE SSM6N37FU * SSM3K37MFV x 2 0.35 1.0 3.07 5.6 1.5
20 10 180 SSM6N35FE ▲1 SSM6N35FU
▲1 SSM3K35MFV x 2 0.4 1.0 5 20 1.2
20 10 500 SSM6N36FE ▲1 SSM6N36TU ▲1 SSM3K36TU x 2 0.35 1.0 0.95 1.52 1.5
20 10 500 SSM6N43FU
▲1 SSM3K43FS x 2 0.35 1.0 0.95 1.52 1.5
30 20 100 SSM5N15FE ▲1 SSM5N15FU ▲1 SSM3K15FU x 2 0.8 1.5 4 7 2.5
30 20 100 SSM6N15AFE * SSM6N15AFU * SSM3K1 5AM F V x 2 0.8 1.5 3. 5 6.0 2.5
30 20 100 SSM6N44FE ▲1 SSM6N44FU
▲
1 SSM3K44FS x 2 0.8 1.5 4.0 7.0 2.5
30 20 400 SSM6N09FU ▲1 SSM3K09FU x 2 1.1 1.8 0.8 1.2 4
50 7 100 SSM6N17FU
▲1 SSM3K17FU x 2 0.9 1.5 22 40 2.5
60 20 200 SSM6N7002AFU ▲1 SSM3K7002AF U x 2 1.0 2.5 1.8 3.3 4.5
N-ch
x 2
60
20 200 SSM6N7002BFE ▲1 * SSM6N7002BFU ▲1* SSM3K7002BF x 2 1.5 3.1 2.1 3.3 4.5
20 10 100 SSM5P16FE ▲2 SSM6P16FE ▲2 SSM5P16FU ▲2SSM6P16FU
▲2 S S M3J16 FU x 2 0.6 1.1 18 45 1.5
20 10 100 SSM6P35FE ▲2 SSM6P35FU
▲2 S S M3J35 FU x 2 0.4 1.0 11 44 1.2
20 8 330 SSM6P36FE ▲2 * SSM6P36TU ▲2 * SSM3J36TU x 2 0.3 1.0 2.23 3.6 1.5
30 20 200 SSM6P09FU
▲2 S S M3J09 FU x 2 1.1 1.8 3.3 4.2 4
P-ch
x 2
30 20 100 SSM5P15FE ▲2 SSM6P15FE ▲2 SSM5P15FU ▲2SSM6P15FU ▲2 SSM 3 J15FU x 2 1.1 1.7 14 32 2.5
20 10 180 0.4 1.0 5 20 1.2
20 10 100 SSM6L35FE ▲3 SSM6L35FU
▲3 SSM3K35FU
SSM3J35FU 0.4 1.0 11 4.4 1.2
20 10 500 0.35 1.0 0.95 1.52 1.5
20 8 330 SSM6L36FE ▲3 * SSM6L36TU ▲3 * SSM3K36TU
SSM3J36TU 0.3 1.0 2.23 3.6 1.5
30 20 400 SSM3K09FU 1.1 1.8 0.8 1.2 4
N-ch
P-ch
30 20 200 SSM6L09FU ▲3 SSM3J09FU 1.1 1.8 3.3 4.2 4
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product
Internal Connect ions
Number of Pins ▲1 ▲2 ▲3
5-pin ESV/USV
6-pin ES6/US6/UF6
The internal connection diagrams only show the general configurations of the circuits.
Q1 Q2
Q1
Q2
Q1
Q2
20
2011/9 SCE0004L
VDSS 60 V (Power MOSFETs) (N-ch MOSFETs) RDS(ON) Max (m)
Package Polarity Part Number
VDSS
(V) VGSS
(V) ID
(A) PD
(W) VGS 1. 5 V VGS 1.8 V VGS 2.5 V VGS 4.0 V Ciss
(pF) Internal FETs Internal
Connections
CST4
(mm)
N-ch SSM4K27CT 20 12 0.5 0.4 390
260 205 174
(4)
SSM6K211FE 20 10 3.2 0.5 118 82 59 47(@4.5 V) 510 (2)
SSM6K202FE 30 12 2.3 0.5 145 101 85 270 (2)
SSM6K204FE 20 10 2.0 0.5 307 214 164 126 195 (2)
SSM6K208FE 30 12 1.9 0.5 296 177 133 123 (2)
SSM6K210FE 30 20 1.4 0.5 371 57 (2)
SSM6K30FE 20 20 1.2 0.5 420 60 (2)
N-ch
SSM6K31FE 20 20 1.2 0.5 540 36 (2)
ES6
0.55
1.6
1.6
(mm) N-ch x 2 SSM6N42FE * 20 10 0.8 0.15 600 450 330 240 (@4.5 V) 90 (1)
SSM3K123TU 20 10 4.2 0.5 66 43 32 28 1010 (3)
SSM3K121TU 20 10 3.2 0.5 140 93 63 48 400 (3)
SSM3K119TU 30 12 2.5 0.5 134 90 74 270 (3)
SSM3K116TU 30 12 2.2 0.5 135 100 (@4.5 V) 245 (3)
SSM3K122TU 20 10 2.0 0.5 304 211 161 123 195 (3)
SSM3K127TU 30 12 2.0 0.5 286 167 123 123 (3)
SSM3K131TU 30 20 6.0 0.5 41.5 (@4.5 V) 450 (3)
SSM3K124TU 30 20 2.4 0.5 120 180 (3)
UFM
0.7
2.1
2.0
(mm)
N-ch
SSM3K106TU 20 20 1.2 0.5 530 36 (3)
SSM6K403TU 20 10 4.2 0.5 66 43 32 28 1050 (2)
SSM6K411TU * 20 12 10 0.5 23.8 12(@4.5 V) 710 (2)
SSM6K404TU 20 10 3.0 0.5 147 100 70 55 400 (2)
SSM6K405TU 20 10 2.0 0.5 307 214 164 126 195 (2)
SSM6K406TU 30 20 4.4 0.5 38.5 (@4.5 V) 490 (2)
SSM6K34TU 30 20 3.0 0.5 77 (@4.5 V) 470 (2)
N-ch
SSM6K407TU 60 20 2.0 0.5 440 150 (2)
SSM6N39TU 20 10 1.6 0.5 247 190 139 119 260 (1)
SSM6N24TU 30 12 0.5 0.5 180 145 (@4.5 V) 245 SSM6K24FE x 2 (1)
UF6
0.7
2.1
2.0
(mm) N-ch x 2 SSM6N40TU 30 20 1.6 0.5 182 180 (1)
#: High ESD protection *: New product
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
Internal Connect ions
(1) (2) (3) (4)
Q2
Q1
Note: Some MOSFETs do not have a Zener diode between gate and source.
The internal connection diagrams only show the general configurations of the circuits.
21
2011/9 SCE0004L
VDSS 60 V (Power MOSFETs) (N-ch MO S F ET s) (Continued) RDS(ON) Max (m) Package Polarity Part Number
VDSS
(V) VGSS
(V) ID (A) PD (W) VGS
1.5 V VGS
1.8 V VGS
2.0 V VGS
2.5 V VGS
4 V VGS
4.5 V VGS
10 V
Ciss
(pF) Qg (nC)
(typ.) Internal
Connections
UDFN6B
(mm)
N-ch SSM6K504NU ** 30 20 9 2 30 650 650 5 (1)
UDFN6
(mm)
N-ch x 2 SSM6N55NU ** 30 20 4 2 64 43 270 2.5 (2)
SSM3K310T 20 10 5.0 0.7 66 43 32 28 1120 14.8 (3)
SSM3K309T 20 12 4.7 0.7 47 35 31 1020 (3)
SSM3K301T 20 12 3.5 0.7 110 74 56 320 4.8 (3)
SSM3K316T 30 12 4.0 1.25 131 87 65 53 270 4.3 (3)
SSM3K320T 30 20 4.2 1.4 77 50 190 4.6 (3)
TSM
2.8
2.9 0.7
(mm)
N-ch
SSM3K318T * 60 20 2.5 0.7 145 107 235 7 (3)
SSM3K329R * 30 12 3.5 2 289 170 126 123 (3)
SSM3K333R * 30 20 6 2 42 28 436 (3)
SSM3K335R * 30 20 6 2 57 35 340 2.6 (3)
SOT-23F
2.4
2.9 0.8
(mm)
N-ch
SSM3K336R ** 30 20 4 2 140 110 110 1 (3)
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product
**: Under dev elopment
Internal Connect ions
(1) (2) (3)
Note: Some MOSFETs do not have a Zener diode between gate and source.
The internal connection diagrams only show the general configurations of the circuits.
22
2011/9 SCE0004L
RDS(ON) Max (m)
Package Polarity Part Number
VDSS
(V) VGSS
(V) ID (A) PD (W) VGS 2.0 V VGS 2. 5 V VGS 4 V VGS 4.5 V VGS 10 V Qg (nC)
(typ.) Internal
Connections
TPCL4201 20 12 6 1.65 52 33 31 11.5 (1)
TPCL4203 24 12 6 1.65 55 38 36 10 (1)
Chip LGA
(mm)
N-ch Du a l
TPCL4202 30 12 6 1.65 64 42 40 10 (1)
TPCF8003 20 12 7 2.5 34 18 9.5 (2)
N-ch Single TPCF8002 30 20 7 2.5 32 21 11.5 (2)
VS-8
(mm) N-ch Dual TPCF8201 20 12 3 1.35 100 66 49 7.5 (3)
TPC6012 20 12 6 2.2 38 20 9 (4)
TPC6008-H 30 20 5.9 2.2 74 60 4.8 (4)
TPC6011 30 20 6 2.2 32 20 14 (4)
TPC6009-H 40 20 5.3 2.2 98 81 4.7 (4)
VS-6
(mm)
N-ch Single
TPC6010-H 60 20 6.1 2.2 63 59 12 (4)
TPCP8006 20 12 9.1 1.68 13.7 10 22 (5)
TPCP8008-H 30 20 8 1.68 23 20 14.7 (5)
TPCP8004 30 20 8.3 1.68 14 8.5 26 (5)
TPCP8005-H 30 20 11 1.68 15.7 12.9 20 (5)
N-ch Single
TPCP8007-H 60 20 5 1.68 64 57 11 (5)
TPCP8204 30 20 4.2 1.48 77 50 4.6 (3)
TPCP8205-H 30 20 6.5 1.48 29 26 13.8 (3)
PS-8
(mm) N-ch Dual TPCP8203 40 20 4.7 1.48 60 40 16 (3)
TPCC8007
20 12 27 30 8.7 4.6 26 (5)
TPCC8061-H 30 20 8 15 29 26 11 (5)
TPCC8067-H 30 20 9 15 33 25 9.5 (5)
TPCC8066-H 30 20 11 17 19 15 15 (5)
TPCC8003-H 30 20 13 22 19.3 16.9 17 (5)
TPCC8065-H 30 20 13 18 14.5 11.4 20 (5)
TPCC8064-H 30 20 19 30 10.6 8.2 23 (5)
TPCC8074
30 20 20 30 8.5 6.3 25 (5)
TPCC8006-H 30 20 22 27 9.3 8 27 (5)
TPCC8009
30 20 24 27 7 26 (5)
TPCC8005-H 30 20 26 30 7.4 6.4 35 (5)
TPCC8062-H 30 20 27 39 7.1 5.6 34 (5)
TPCC8073
30 20 27 39 5.9 4.5 37 (5)
TPCC8008
30 25 25 30 13 6.8 30 (5)
TPCC8084
33 20 21 32 9 6.7 27 (5)
TSON Advance
(mm)
N-ch Single
TPCC8076
33 20 27 39 6.2 4.6 34 (5)
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
Internal Connect ions
(1) (2) (3) (4) (5)
4 3
1 2
8 6
1 2 3
7 5
4
86
12 3
7 5
4
64
123
5
86
123
7 5
4
Note: Some MOSFETs do not have a Zener diode between gate and source.
The internal connection diagrams only show the general configurations of the circuits.
23
2011/9 SCE0004L
VDSS 60 V (Power MOSFETs) (N-ch MO S F ET s) (Continued)
RDS(ON) Max (m)
Package Polarity Part Number VDSS (V) VGSS (V) ID (A) PD (W) VGS 2.0 V VGS 2.5 V VGS 4 V VGS 4.5 V VGS 10 V Qg (nC)
(typ.) Internal
Connections
TPC8061-H 30 20 8 1.9 29 26 11 (1)
TPC8067-H 30 20 9 1.9 33 25 9.5 (1)
TPC8066-H 30 20 11 1.9 19 16 15 (1)
TPC8037-H 30 20 12 1.9 13.9 11.4 21 (1)
TPC8038-H 30 20 12 1.9 13.9 11.4 21 (1)
TPC8065-H 30 20 13 1.9 14.7 11.6 20 (1)
TPC8040-H 30 20 13 1.9 11.1 9.7 24 (1)
TPC8032-H 30 20 15 1.9 8.6 6.5 33 (1)
TPC8064-H 30 20 16 1.9 10.8 8.4 23 (1)
TPC8063-H 30 20 17 1.9 8.9 7 27 (1)
TPC8039-H 30 20 17 1.9 6.9 6 36 (1)
TPC8033-H 30 20 17 1.9 7.2 5.3 42 (1)
TPC8062-H 30 20 18 1.9 7.3 5.8 34 (1)
TPC8036-H 30 20 18 1.9 5.1 4.5 49 (1)
TPC8059-H 30 20 18 1.9 5 4 41 (1)
TPC8060-H 30 20 18 1.9 4.2 3.7 65 (1)
TPC8034-H 30 20 18 1.9 4.5 3.5 68 (1)
TPC8058-H 30 20 18 1.9 4 3.2 51 (1)
TPC8035-H 30 20 18 1.9 3.6 3.2 82 (1)
TPC8057-H 30 20 18 1.9 3.4 2.8 61 (1)
TPC8056-H 30 20 18 1.9 2.9 2.4 74 (1)
TPC8055-H 30 20 18 1.9 2.5 2.1 91 (1)
TPC8041
30 20 13 1.9 13.5 7 27 (1)
TPC8092
30 20 15 1.9 11.1 9 25 (1)
TPC8074
30 20 17 1.9 8.7 6.5 25 (1)
TPC8086
30 20 17 1.9 8.5 6.4 26 (1)
TPC8073
30 20 18 1.9 6.1 4.7 37 (1)
TPC8085
30 20 18 1.9 6.1 4.7 37 (1)
TPC8028
30 20 18 1.9 8 4.3 45 (1)
TPC8082
30 20 18 1.9 5 4 41 (1)
TPC8029
30 20 18 1.9 7 3.8 49 (1)
TPC8042
30 20 18 1.9 6.5 3.4 56 (1)
TPC8081
30 20 18 1.9 4 3.2 51 (1)
TPC8080
30 20 18 1.9 3.4 2.8 61 (1)
TPC8027
30 20 18 1.9 5.5 2.7 113 (1)
TPC8088
30 20 18 1.9 2.9 2.4 74 (1)
TPC8087
30 20 18 1.9 2.5 2.1 91 (1)
TPC8084
33 20 17 1.9 9.2 6.9 27 (1)
TPC8076
33 20 18 1.9 6.5 4.9 34 (1)
TPC8075
33 20 18 1.9 3.3 2.6 70 (1)
TPC8078
33 20 18 1.9 2.8 2.2 90 (1)
TPC8052-H 40 2012 1.9 13.3 11.5 25 (1)
TPC8047-H 40 2016 1.9 8.8 7.6 43 (1)
TPC8046-H 40 2018 1.9 6.6 5.7 57 (1)
TPC8045-H 40 2018 1.9 4.4 3.9 90 (1)
TPC8053-H 60 209 1.9 24.2 22.5 25 (1)
TPC8050-H 60 2011 1.9 15.6 14.5 41 (1)
TPC8049-H 60 2013 1.9 11.5 10.7 56 (1)
SOP-8
(mm)
N-ch Single
TPC8048-H 60 2016 1.9 7.4 6.9 87 (1)
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
Internal Connect ions
(1)
8 6
1 2 3
7 5
4
Note: Some MOSFETs do not have a Zener diode between gate and source.
The internal connection diagrams only show the general configurations of the circuits.
24
2011/9 SCE0004L
RDS(ON) Max (m)
Package Polarity Part Number VDSS (V) VGSS (V) ID (A) PD (W) VGS 2.0 V VGS 2.5 V VGS 4 V VGS 4.5 V VGS 10 V Qg (nC)
(typ.) Internal
Connections
TPC8221-H 30 20 6 1.5 29 25 12 (1)
TPC8224-H 30 20 8 1.6 34 26 9.5 (1)
SOP-8
(mm)
N-ch Du al
TPC8223-H 30 20 9 1.5 21 17 17 (1)
TPCA8011-H 20 12 40 45 7.5 3.5 32 (2)
TPCA8063-H 30 20 22 35 8.7 6.8 27 (2)
TPCA8040-H 30 20 23 30 10.8 9.4 23 (2)
TPCA8065-H 30 20 16 25 14.5 11.4 20 (2)
TPCA8030-H 30 20 24 30 13.4 11 21 (2)
TPCA8031-H 30 20 24 30 13.4 11 21 (2)
TPCA8064-H 30 20 20 32 10.6 8.2 23 (2)
TPCA8062-H 30 20 28 42 7.1 5.6 34 (2)
TPCA8059-H 30 20 32 45 4.8 3.8 41 (2)
TPCA8039-H 30 20 34 45 6.6 5.7 36 (2)
TPCA8058-H 30 20 38 52 3.8 3 51 (2)
TPCA8036-H 30 20 38 45 4.8 4.2 50 (2)
TPCA8057-H 30 20 42 57 3.2 2.6 61 (2)
TPCA8060-H 30 20 45 45 3.9 3.4 66 (2)
TPCA8056-H 30 20 48 63 2.7 2.2 74 (2)
TPCA8028-H 30 20 50 45 3.2 2.8 88 (2)
TPCA8055-H 30 20 56 70 2.3 1.9 91 (2)
TPCA8082 30 20 32 45 4.8 3.8 41 (2)
TPCA8024 30 20 35 45 7.8 4.3 45 (2)
TPCA8081 30 20 38 52 3.8 3 51 (2)
TPCA8025 30 20 40 45 6 3.5 49 (2)
TPCA8080 30 20 42 57 3.2 2.6 61 (2)
TPCA8026 30 20 45 45 4.5 2.2 113 (2)
TPCA8042 30 20 45 45 5.7 3.3 56 (2)
TPCA8088 30 20 48 63 2.7 2.2 74 (2)
TPCA8087 30 20 56 70 2.3 1.9 91 (2)
TPCA8052-H 40 20 20 30 13.1 11.3 25 (2)
TPCA8047-H 40 20 32 45 8.5 7.3 43 (2)
TPCA8046-H 40 20 38 45 6.3 5.4 55 (2)
TPCA8045-H 40 20 46 45 4.1 3.6 90 (2)
TPCA8053-H 60 20 15 30 24 22.3 25 (2)
TPCA8050-H 60 20 24 45 15.3 14.2 41 (2)
SOP Advance
(mm)
N-ch Single
TPCA8049-H 60 20 28 45 11.2 10.4 55 (2)
2SK2615 60 2 1.5 440 300 6
PW-Mini
(mm)
N-ch Single
2SK3658 60 2 1.5 440 300 5
2SK2989 50 5 0.9 330 150 6.5
LSTM
(mm)
N-ch Single
2SK2961 60 2 0.9 380 270 5.8
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
Internal Connect ions
Note: Some MOSFETs do not have a Zener diode between gate and source.
The internal connection diagrams only show the general configurations of the circuits.
(1) (2)
8 6
1 2 3
7 5
4
8 6
1 2 3
7 5
4
25
2011/9 SCE0004L
VDSS 60 V (Power MOSFETs) (N-ch MO S F ET s) (Continued) RDS(ON) Max (m)
Package Polarity Part Number VDSS
(V) VGSS
(V) ID (A) PD (W) VGS
2.0 V VGS
2.5 V VGS
4 V VGS
4.5 V VGS
6 V VGS
10 V
Qg (nC)
(typ.) Internal
Connections
2SK2493 16 5 20 120 100 23
New PW-Mold
(mm)
N-ch
Single
2SK4033 60 5 20 150 100 15
New PW-Mold2
(mm)
N-ch
Single 2SK4017 60 5 20 150 100 15
TK40P03M1 30 20 40 40 14.4 10.8 9.4
TK45P03M1 30 20 45 39 12 9.7 13
TK50P03M1 30 20 50 60 9.8 7.5 13.3
TK60P03M1 30 20 60 63 7.8 6.4 21
TK20P04M1 40 20 20 27 34 29 7.6
TK40P04M1 40 20 40 60 13.4 11 15
DPAK
(mm)
N-ch
Single
TK50P04M1 40 20 50 60 10.2 8.7 20
TK10S04K3L 40 20 10 25 54 28 10
TK20S04K3L 40 20 20 38 26 14 18
TK35S04K3L 40 20 35 58 15 10.3 28
TK65S04K3L 40 20 65 88 7.9 4.5 63
TK80S04K3L 40 20 80 100 4.8 3.1 87
TK8S06K3L 60 20 8 25 80 54 10
TK20S06K3L 60 20 20 38 40 29 18
TK30S06K3L 60 20 30 58 30 18 28
TK60S06K3L 60 20 60 88 12.3 8 60
DPAK+
(mm)
N-ch
Single
TK80S06K3L 60 20 80 100 7.8 5.5 85
TK70X04K3 40 20 70 80 5.6 62
TK70X04K3Z 40 20 70 80 5.6 62
TK80X04K3 40 20 80 125 3.5 100
TK80X04K3L 40 20 80 125 4.2 3.5 105
TK70X06K3 60 20 70 80 8 62
2SK3842 60 20 75 125 5.8 196
TFP
(mm)
N-ch
Single
2SK4034 60 20 75 125 10 5.8 196
TK100F04K3 40 20 100 200 3 102
TK100F04K3L 40 20 100 200 4.5 3 105
TK150F04K3 40 20 150 300 2.1 166
TK150F04K3L 40 20 150 300 3.2 2.1 190
TK100F06K3 60 20 100 200 5 98
TO-220 SM(W)
(mm)
N-ch
Single
TK130F06K3 60 20 130 300 3.4 170
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
26
2011/9 SCE0004L
RDS(ON) Max (m)
Package Polarity Part Number VDSS (V) ID (A) PD (W) VGS 2.0 V VGS 2.5 V VGS 4 V VGS 4.5 V VGS 10 V Qg (nC)
(typ.) Internal
Connections
TK50A04K3 40 50 42 3.5 102
TK30A06J3A 60 30 25 35 26 36
TO-220SIS
(mm)
N-ch Single
TK75A06K3 60 75 35 5.5 85
TK25E06K3 60 25 64 18 29
TK50E06K3A 60 50 104 8.5 54
TO-220
(mm)
N-ch Single
TK80E06K3A 60 80 125 5.8 90
TK70J04K3Z 40 70 125 3.9 100
TK75J04K3Z 40 75 150 3.0 190
TO-3P(N)
(mm)
N-ch Single
TK70J06K3 60 70 125 6 98
TO-3P(L)
(mm)
N-ch Single 2SK2267 60 60 150 15 11 170
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
27
2011/9 SCE0004L
60 V VDSS 300 V (Power MOS FETs) (N-c h M OSFETs) RDS(ON) Max (m)
Package Polarity Part Number VDSS (V) VGSS (V) ID (A) PD (W) VGS
1.8 V VGS
2.0 V VGS
2.5 V VGS
4 V VGS
4.5 V VGS
7 V VGS
10 V
Qg (nC)
(typ.) Internal
Connections
PS-8
(mm)
N-ch Single TPCP8003-H 100 20 2.2 1.68 190 180 7.5 (1)
TPC8051-H 80 2013 1.9 10.1 9.7 85 (1)
SOP-8
(mm)
N-ch Single
TPC8012-H 200 20 1.8 1.9 400 11 (1)
TPCA8070-H 80 25 12 45 35 21 (1)
TPCA8051-H 80 20 28 45 9.8 9.4 91 (1)
TPCA8006-H 100 20 18 45 67 12 (1)
TPCA8009-H 150 20 7 45 350 10 (1)
TPCA8010-H 200 20 5.5 45 450 10 (1)
SOP Advance
(mm)
N-ch Single
TPCA8008-H 250 20 4 45 580 10 (1)
2SK2963 100 1 1.5 950 700 6.3
PW-Mini
(mm)
N-ch Single
2SK2992 200 1 1.5 3500 3
2SK2962 100 1 0.9 950 700 6.3
LSTM
(mm)
N-ch Single
2SK3670 150 0.67 0.9 1700 4.6
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
Internal Connect ions
(1)
8 6
1 2 3
7 5
4
Note: Some MOSFETs do not have a Zener diode between gate and source.
The internal connection diagrams only show the general configurations of the circuits.
28
2011/9 SCE0004L
RDS(ON) Max (m)
Package Polarity Part Number VDSS (V) ID (A) PD (W) VGS
1.8 V VGS
2.0 V VGS
2.5 V VGS
4 V VGS
4.5 V VGS
7 V VGS
10 V
Qg (nC)
(typ.) Internal
Connections
2SK2201 100 3 20 450 350 13.5
2SK2399 100 5 20 300 230 22
2SK3669 100 10 20 125 8.0
2SK3205 150 5 20 750 500 12
2SK2162 180 1 20 5000
2SK2920 200 5 20 800 10
2SK3462 250 3 20 1700 12
New PW-Mold
(mm)
N-ch Single
2SK3342 250 4.5 20 1000 10
2SK4018 100 3 20 450 350 13.5
2SK4019 100 5 20 300 230 22
2SK4020 200 5 20 800 10
2SK4022 250 3 20 1700 12
New PW-Mold2
(mm)
N-ch Single
2SK4021 250 4.5 20 1000 10
TK8P25DA 250 7.5 55 500 16
DPAK
(mm)
N-ch Single
TK13P25D 250 13 96 250 25
TK40X10J1 100 40 125 20 59
TK50X15J1 150 50 125 30 75
2SK3444 200 25 125 82 44
2SK3388 250 20 125 105 100
TFP
(mm)
N-ch Single
2SK3445 250 20 125 105 45
TK40F08K3 75 40 107 8.5 80
TK80F08K3 75 80 300 4.3 175
TO-220SM(W)
(mm)
N-ch Single
TK50F15J1 150 50 300 30 75
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
29
2011/9 SCE0004L
60 V VDSS 300 V (Power MOS FETs) (N-c h M OSFETs) (Continued ) RDS(ON) Max (m)
Package Polarity Part Number VDSS (V) VGSS (V) ID (A) PD (W) VGS
1.8 V VGS
2.0 V VGS
2.5 V VGS
4 V VGS
4.5 V VGS
7 V VGS
10 V
Qg (nC)
(typ.) Internal
Connections
TK40A08K3 75 20 40 42 9 80
TK60A08J1 75 20 60 45 9.3 7.8 86
TK80A08K3 75 20 80 40 4.5 175
TK8A10K3 100 20 8 18 120 12.9
TK12A10K3 100 20 12 20 80 18
TK25A10K3 100 20 25 25 40 34
TK40A10J1 100 2040 40 17 15 76
TK40A10K3 100 2040 40 15 85
TK55A10J1 100 20 55 45 12 10.5 110
TK9A20DA 200 20 8.5 30 400 14
TK15A20D 200 20 15 35 180 26
TK8A25DA 250 20 7.5 30 500 16
TK13A25D 250 20 13 35 250 25
TO-220SIS
(mm)
N-ch
Single
TK20A25D 250 20 20 45 100 55
TK50E08K3 75 20 50 104 12 55
TK60E08K3 75 20 60 128 9 75
TK18E10K3 100 20 18 71 42 33
TK40E10K3 100 20 40 147 15 84
TO-220
(mm)
N-ch
Single
TK13E25D 250 20 13 102 250 25
2SK3940 75 70 150 7 200
2SK3497 180 10 130 150 36
TK40J20D 200 20 40 260 44 100
TK70J20D 200 20 70 410 30 160
TK30J25D 250 20 30 260 60 100
TK60J25D 250 20 60 410 38 160
TO-3P(N)
(mm)
N-ch
Single
TK50J30D 300 20 50 410 52 160
TO-3P(N)IS
(mm)
N-ch
Single 2SK2995 250 30 90 68 132
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
30
2011/9 SCE0004L
300 V VDSS 700 V (Power MOSFETs) (N-ch MOSFETs) RDS(ON) Max ()
Package Polarity Part Number VDSS (V) ID (A) PD (W) VGS 10 V Qg (nC)
(typ.) Internal
Connections
PW-Mini
(mm)
N-ch Single 2SK3471 500 0.5 1.5 18 3.8
LSTM
(mm)
N-ch Single 2SK2998 500 0.5 0.9 18 3.8
PW-Mold
(mm)
N-ch Single 2SK3373 500 2 20 3.2 9
New PW-Mold
(mm)
N-ch Single TK2P60D 600 2 60 4.3 7
2SK4023 450 1 20 4.6 5
2SK4026 600 1 20 9.0 9
TK2Q60D 600 2 60 4.3 7
New PW-Mold2
(mm)
N-ch Single
2SK4003 600 3 20 2.2 15
TK3P50D 500 3 60 3.0 7
TK4P50D 500 4 80 2.0 9
TK5P50D 500 5 80 1.5 11
TK7P50D 500 7 100 1.22 12
TK5P53D 525 5 80 1.5 11
TK6P53D 525 6 100 1.3 12
TK4P55DA 550 3.5 80 2.45 9
TK4P55D 550 4 80 1.88 11
TK4P60DA 600 3.5 80 1.7 11
DPAK
(mm)
N-ch Single
TK4P60DB 600 3.7 80 2.0 11
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
31
2011/9 SCE0004L
300 V VDSS 700 V (Power MOSFETs) (N-ch MOSFETs) (Continued) RDS(ON) Max ()
Package Polarity Part Number VDSS (V) ID (A) PD (W) VGS 10 V Qg (nC)
(typ.) Internal
Connections
TK10X40D 400 10 125 0.55 20
2SK3544 450 13 100 0.4 34
2SK3466 500 5 50 1.5 17
2SK3538 500 8 65 0.85 30
TK12X53D 525 12 150 0.58 25
2SK3438 600 10 80 1.0 28
TK12X60U 600 12 100 0.4 14
TK15X60U 600 15 125 0.3 17
TFP
(mm)
N-ch Single
TK20X60U 600 20 150 0.19 27
TK12E60U 600 12 144 0.4 14
TK15E60U 600 15 170 0.3 17
TO-220
(mm)
N-ch Single
TK20E60U 600 20 190 0.19 27
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
32
2011/9 SCE0004L
RDS(ON) Max ()
Package Polarity Part Number VDSS (V) ID (A) PD (W) VGS 10 V Qg (nC)
(typ.) Internal
Connections
2SK3757 450 2 30 2.45 9
2SK3766 450 2 30 2.45 8
TK5A45DA 450 4.5 30 1.75 9
TK6A45DA 450 5.5 35 1.35 11
TK7A45DA 450 6.5 35 1.2 11
TK8A45DA 450 7.5 35 1.1 12
TK8A45D 450 8 35 0.9 16
TK9A45D 450 9 40 0.77 16
TK11A45D 450 11 40 0.62 20
TK12A45D 450 12 45 0.52 24
TK13A45D 450 13 45 0.46 25
TK14A45DA 450 13.5 45 0.41 28
TK14A45D 450 14 45 0.34 38
TK16A45D 450 16 50 0.27 40
TK19A45D 450 19 50 0.25 45
TK4A50D 500 4 30 2.0 9
TK5A50D 500 5 35 1.5 11
TK6A50D 500 6 35 1.4 11
TK7A50D 500 7 35 1.22 12
TK8A50DA 500 7.5 35 1.04 16
TK8A50D 500 8 40 0.85 16
TK10A50D 500 10 45 0.72 20
TK11A50D 500 11 45 0.6 38
TK12A50D 500 12 45 0.52 25
TK13A50DA 500 12.5 45 0.47 28
TK13A50D 500 13 45 0.4 32
TK15A50D 500 15 50 0.3 40
TK18A50D 500 18 50 0.27 45
TK4A53D 525 4 35 1.7 11
TK5A53D 525 5 35 1.5 11
TK6A53D 525 6 35 1.3 12
TK12A53D 525 12 45 0.58 25
TK4A55DA 550 3.5 30 2.45 9
TK4A55D 550 4 35 1.88 11
TK5A55D 550 5 35 1.7 11
TK6A55DA 550 5.5 35 1.48 12
TK7A55D 550 7 35 1.25 16
TK8A55DA 550 7.5 40 1.07 16
TK9A55DA 550 8.5 40 0.86 20
TK10A55D 550 10 45 0.72 24
TK11A55D 550 11 45 0.63 25
TK12A55D 550 12 45 0.57 28
TK13A55DA 550 12.5 45 0.48 38
TK14A55D 550 14 50 0.37 40
TK16A55D 550 16 50 0.33 45
TK3A60DA 600 2.5 30 2.8 9
TK4A60DA 600 3.5 35 2.2 11
TO-220SIS
(mm)
N-ch Single
TK4A60DB 600 3.7 35 2 11
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
33
2011/9 SCE0004L
300 V VDSS 700 V (Power MOSFETs) (N-ch MOSFETs) (Continued) RDS(ON) Max ()
Package Polarity Part Number VDSS (V) ID (A) PD (W) VGS 10 V Qg (nC)
(typ.) Internal
Connections
TK4A60D 600 4 35 1.7 12
TK5A60D 600 5 35 1.43 16
TK6A60D 600 6 40 1.25 16
TK8A60DA 600 7.5 45 1.0 20
TK9A60D 600 9 45 0.83 24
TK10A60D 600 10 45 0.75 25
TK11A60D 600 11 45 0.65 28
TK12A60D 600 12 45 0.55 38
TK12A60U 600 12 35 0.4 14
TK13A60D 600 13 40 0.43 40
TK15A60D 600 15 50 0.37 45
TK15A60U 600 15 40 0.3 17
TK18A60V 600 18 40 0.19 39
TK20A60U 600 20 45 0.19 27
TK2A65D 650 2 30 3.26 9
TK3A65DA 650 2.5 35 2.51 11
TK3A65D 650 3 35 2.25 11
TK4A65DA 650 3.5 35 1.9 12
TK5A65DA 650 4.5 35 1.67 16
TK5A65D 650 5 40 1.43 16
TK6A65D 650 6 45 1.11 20
TK7A65D 650 7 45 0.98 24
TK8A65D 650 8 45 0.84 25
TK11A65D 650 11 45 0.7 38
TK12A65D 650 12 50 0.54 40
TK13A65D 650 13 50 0.47 45
TK13A65U 650 13 40 0.38 17
TO-220SIS
(mm)
N-ch Single
TK17A65U 650 17 45 0.26 27
2SK2601 500 10 125 1.0 30
TK15J50D 500 15 210 0.4 32
TK20J50D 500 20 280 0.27 45
TK12J55D 550 12 190 0.57 28
TK16J55D 550 16 250 0.37 40
TK19J55D 550 19 280 0.33 45
2SK2602 600 6 125 1.25 30
2SK2699 600 12 150 0.65 58
TK12J60U 600 12 144 0.4 14
TK15J60U 600 15 170 0.3 17
TK20J60U 600 20 190 0.19 27
TK40J60U 600 40 320 0.08 55
TK50J60U 600 50 400 0.065 67
TK13J65U 650 13 170 0.38 17
TO-3P(N)
(mm)
N-ch Single
TK17J65U 650 17 190 0.26 27
2SK2917 500 18 90 0.27 80
2SK2953 600 15 90 0.4 80
TK40M60U 600 40 90 0.08 55
TO-3P(N)IS
(mm)
N-ch Single
2SK3453 700 10 80 1.0 53
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
34
2011/9 SCE0004L
700 V VDSS (Power MOSFETs) (N-ch MOSFETs ) RDS(ON) Max ()
Package Polarity Part Number VDSS (V) ID (A) PD (W) VGS 10 V Qg (nC)
(typ.) Internal
Connections
New PW-Mold
(mm)
N-ch Single TK1P90A 900 1 20 9.0 13
New PW-Mold2
(mm)
N-ch Single TK1Q90A 900 1 20 9.0 13
2SK4013 800 6 45 1.7 45
2SK3566 900 2.5 40 6.4 12
2SK3564 900 3 40 4.3 17
2SK3798 900 4 40 3.5 26
2SK3565 900 5 45 2.5 28
2SK3742 900 5 45 2.5 25
2SK4014 900 6 45 2.0 45
TO-220SIS
(mm)
N-ch Single
2SK3799 900 8 50 1.3 62
2SK3633 800 7 150 1.7 35
2SK2607 800 9 150 1.2 68
2SK2719 900 3 125 4.3 25
2SK3700 900 5 150 2.5 28
2SK4115 900 7 150 2.0 45
2SK3473 900 9 150 1.6 38
2SK3878 900 9 150 1.3 62
2SK2968 900 10 150 1.25 70
2SK4207 900 13 150 0.95 45
2SK1359 1000 5 125 3.8 60
TO-3P(N)
(mm)
N-ch Single
2SK2613 1000 8 150 1.7 65
2SK3880 800 6.5 80 1.7 35
2SK2606 800 8 85 1.2 68
2SK2847 900 8 85 1.4 58
2SK3017 900 8.5 90 1.25 70
TO-3P(N)IS
(mm)
N-ch Single
2SK1365 1000 7 90 1.8 120
TO-3P(L)
(mm)
N-ch Single 2SK1489 1000 12 200 1.0 110
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
35
2011/9 SCE0004L
|VDSS| 250 V (P ower MOSF ETs) (P-ch MOSFET s) RDS(ON) Max (m)
Package Polarity Part Number VDSS
(V) VGSS
(V) ID
(A) VGS
1.2 V VGS
1.5 V VGS
1.8 V VGS
2.5 V VGS
4.0 V VGS
4.5 V
Ciss
(pF) Internal FET Internal
Connections
CST3B
(mm)
Pch SSM3J46CTB * 20 8 2 250 178 133 103 290 (4)
VESM
1.2
0.8
1.2
0.5
(mm)
Pch SSM3J56MFV * 20 8 0.8 4000 900 660 480 390 100 (3)
SSM6J212FE * 20 8 4.0 94 65.4 49 40.7 970 (2)
SSM6J215FE * 20 8 3.4 154 104 79 59 630 (2)
SSM6J214FE * 30 12 3.6 149.6 77.6 57 560 (2)
SSM6J213FE * 20 8 2.6 250 178 133 103 290 (2)
Pch
SSM6J207FE 30 20 1.4 491 137 (2)
ES6
0.55
1.6
1.6
(mm) Pch Pch SSM6P41FE * 20 8 0.72 1040 670 440 300 110 (1)
SSM3J132TU * 12 6 5.4 94 39 29 21 17 2700 (3)
SSM3J130TU * 20 8 4.4 63.2 41.1 31.0 25.8 1800 (3)
SSM3J129TU * 20 8 4.6 137 88 62 46 640 (3)
SSM3J113TU 20 12 1.7 449 (@2.0 V) 249 169 370 (3)
SSM3J133TU * 20 8 5.5 88.4 56.0 39.7 29.8 840 (3)
SSM3J134TU * 20 8 3.2 240 168 123 93 290 (3)
SSM3J135TU * 20 8 3.0 260 180 132 103 270 (3)
SSM3J117TU 30 20 2.0 225 280 (3)
SSM3J118TU 30 20 1.4 480 137 (3)
UFM
0.7
2.1
2.0
(mm)
Pch
SSM3J112TU 30 20 1.1 790 86 (3)
SSM6J409TU * 20 8 9.5 72.3 46.3 30.2 22.1 1100 (2)
SSM6J412TU * 20 8 4.0 99.6 67.8 51.4 42.7 840 (2)
SSM6J50TU 20 10 2.5 205 (@2.0 V) 100 64 800 (2)
SSM6J401TU 30 20 2.5 145 730 (2)
SSM6J402TU 30 20 2.0 225 280 (2)
Pch
SSM6J410TU * 30 20 2.1 393 120 (2)
SSM6P54TU 20 8 1.2 555 350 228 331 (1)
SSM6P39TU 20 8 1.5 430 294 213 250 (1)
SSM6P25TU 20 12 0.5 430 260 218 SSM6J25FE x 2 (1)
UF6
0.7
2.1
2.0
(mm) Pch x 2
SSM6P40TU 30 20 1.4 403 120 (1)
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product
Internal Connect ions
(1) (2) (3) (4)
Q2
Q1
The internal connection diagrams only show the general configurations of the circuits.
36
2011/9 SCE0004L
RDS(ON) Max (m)
Package Polarity Part Number VDSS
(V) VGSS
(V) ID
(A) VGS
1.2 V VGS
1.5 V VGS
1.8 V VGS
2.5 V VGS
4.5 V
Ciss
(pF) Internal FET Internal
Connections
SSM6P47NU * 20 8 4 242 170 125 95 290 (3)
UDFN6
(mm)
Pch x 2
SSM6P49NU * 20 12 4 157 76 56 480 (3)
SSM6J505NU ** 12 6 10 70 23 20 15 10 3000 (2)
SSM6J501NU * 20 8 10 43 26.5 19 15.3 2600 (2)
SSM6J502NU * 20 8 6 60.5 38.4 28.3 23.1 1800 (2)
UDFN6B
(mm)
Pch
SSM6J503NU * 20 8 6 89.6 57.9 41.7 32.4 840 (2)
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product
**: Under development
Internal Connect ions
(1) (2) (3)
The internal connection diagrams only show the general configurations of the circuits.
37
2011/9 SCE0004L
|VDSS| 250 V (P ower MOSF ETs) (P-ch MOSFETs) (Continued)
RDS(ON) Max (m)
Package Polarity Part Number VDSS
(V) VGSS
(V) ID
(A) PD
(W) VGS
1.5V VGS
1.8V VGS
2.0V VGS
2.5V VGS
4V VGS
4.5V VGS
7V VGS
10V
Ciss
(pF)
Qg
(nC)
(typ.)
Internal
Connections
SSM3J326T * 30 12 5.6 1.25 115 62.5 45.7 650 9.3 (6)
SSM3J314T 30 20 3.5 0.7 100 505 11.5 (6)
SSM3J306T 30 20 2.4 0.7 225 280 2.5 (6)
TSM
2.8
2.9 0.7
(mm)
Pch
SSM3J305T 30 20 1.7 0.7 477 137 1.3 (6)
S-MINI
2.5
2.9
1.5
(mm)
Pch SSM3J325F * 20 8 2 1.2 311 231 179 150 270 4.6 (6)
SSM3J328R * 20 8 6 2 88.4 56 39.7 29.8 840 12.8 (6)
SSM3J331R * 20 8 4 2 150 100 75 55 630 4.7 (6)
SSM3J327R * 20 8 3.9 2 240 168 123 93 290 4.6 (6)
SSM3J332R * 30 12 6 2 144 72 50 47 560 8.2 (6)
SOT-23F
2.4
2.9 0.8
(mm)
Pch
SSM3J334R * 30 20 4 2 105 71 280 5.9 (6)
TPCF8101 12 8 6 2.5 85 40 28 18 (2)
TPCF8103 20 8 2.7 2.5 300 160 110 6 (2)
TPCF8105 20 12 6 2.5 100 41 30 17 (2)
TPCF8108 20 12 7 2.5 95 37 26 1320 19 (2)
Pch Single
TPCF8107 30 25/20 6 2.5 38 28 970 22 (2)
TPCF8301 20 8 2.7 1.35 300 160 110 6 (3)
TPCF8305 20 12 4 1.35 265 160 83 58 680 9.2 (3)
VS-8
(mm) Pch Dual TPCF8304 30 20 3.2 1.35 105 72 14 (3)
TPC6130 20 12 2.8 2.2 164 106 360 5.1 (1)
TPC6103 12 8 5.5 2.2 90 55 35 20 (1)
TPC6105 20 8 2.7 2.2 300 160 110 6 (1)
TPC6113 20 12 5 2.2 85 55 690 10 (1)
TPC6111 20 8 5.5 2.2 80 57 40 10 (1)
TPC6110 30 25/20 4.5 2.2 77 56 14 (1)
VS-6
(mm)
Pch Single
TPC6109-H 30 20 5 2.2 83 59 12.3 (1)
TPCP8101 20 8 5.6 1.68 90 41 30 19 (4)
TPCP8105 20 12 5.2 1.68 60 45 23 17 2280 28 (4)
TPCP8102 20 12 7.2 1.68 80 30 18 33 (4)
TPCP8106 30 25/20 7.2 1.68 44 33 870 19 (4)
Pch Single
TPCP8103-H 40 20 4.8 1.68 54 40 19 (4)
TPCP8303 20 8 3.8 1.48 144 90 60 46 10 (3)
TPCP8306 20 12 4 1.48 265 160 83 58 680 9.2 (3)
PS-8
(mm) Pch Dual TPCP8305 20 12 6 1.48 42 30 1500 21.5 (3)
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product
Internal Connect ions
(1) (2) (3) (4) (6)
6 4
1 2 3
5
8 6
1 2 3
7 5
4
86
12 3
7 5
4
8 6
1 2 3
7 5
4
Note: Some MOSFETs do not have a Zener diode between gate and source.
The internal connection diagrams only show the general configurations of the circuits.
38
2011/9 SCE0004L
RDS(ON) Max (m)
Package Polarity Part Number VDSS
(V) VGSS
V) ID
(A) PD
(W) VGS
1.8 V VGS
2.0 V VGS
2.5 V VGS
4 V VGS
4.5 V VGS
7 V VGS
10 V
Qg
(nC)
(typ.)
Internal
Connections
TPCC8131 30 25/20 10 20 23 17.6 40 (1)
TPCC8102 30 20 15 26 33.2 18.9 26 (1)
TPCC8103 30 20 18 27 25 12 38 (1)
TPCC8104 30 25/20 20 27 12.4 8.8 58 (1)
TSON Advance
(mm)
Pch Single
TPCC8105 30 25/20 23 30 10.4 7.8 76 (1)
TPC8129 30 25/20 9 1.9 22 28 39 (1)
TPC8119 30 20 10 1.9 28 13 40 (1)
TPC8125 30 25/20 10 1.9 17 13 64 (1)
TPC8121 30 20 10 1.9 24 12 42 (1)
TPC8126 30 25/20 11 1.9 14 10 56 (1)
TPC8123 30 25/20 11 1.9 12.5 9 68 (1)
TPC8122 30 20 12 1.9 16.5 8 62 (1)
TPC8118 30 20 13 1.9 15 7 65 (1)
TPC8127 30 25/20 13 1.9 8.9 6.5 92 (1)
TPC8128 30 25/20 16 1.9 6.9 5 115 (1)
TPC8117 30 20 18 1.9 7.9 3.9 130 (1)
TPC8120 30 25/20 18 1.9 4.2 3.2 180 (1)
TPC8134 40 25/20 5 1.9 66 52 20 (1)
TPC8132 40 25/20 7 1.9 33 25 34 (1)
TPC8133 40 25/20 9 1.9 18 15 64 (1)
SOP-8
(mm)
Pch Single
TPC8124 40 25/20 12 1.9 10 8 104 (1)
TPCA8105 12 8 6 20 92 51 33 18 (1)
TPCA8109 30 25/20 12 30 13 9 56 (1)
TPCA8128 30 25/20 34 45 6.7 4.8 115 (1)
TPCA8106 30 20 40 45 7.8 3.7 130 (1)
TPCA8120 30 25/20 45 45 4.0 3.0 190 (1)
TPCA8107-H 40 20 7.5 30 37 30 27 (1)
TPCA8108 40 20 40 45 9.5 100 (1)
SOP Advance
(mm)
Pch Single
TPCA8104 60 20 40 45 24 16 90 (1)
2SJ360 60 1 1.5 1200 730 6.5
PW-Mini
(mm)
Pch Single
2SJ508 100 1 1.5 2500 1900 6.3
2SJ537 50 5 0.9 340 190 18
2SJ507 60 1 0.9 1000 700 5.6
LSTM
(mm)
Pch Single
2SJ509 100 1 0.9 2500 1900 6.3
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
Internal Connect ions
(1)
8 6
1 2 3
7 5
4
Note: Some MOSFETs do not have a Zener diode between gate and source.
The internal connection diagrams only show the general configurations of the circuits.
39
2011/9 SCE0004L
|VDSS| 250 V (P ower MOSF ETs) (P-ch MOSFETs) (Continued) RDS(ON) Max (m)
Package Polarity Part Number VDSS
(V) VGSS
(V) ID
(A) PD
(W) VGS
1.8 V VGS
2.0 V VGS
2.5 V VGS
4 V VGS
4.5 V VGS
6 V VGS
7 V VGS
10 V
Qg
(nC)
(typ.)
Internal
Connections
2SJ439 16 5 20 280 200 24
2SJ668 60 20 5 20 250 170 15
2SJ338 180 1 20 5000
2SJ567 200 2.5 20 2000 10
New PW- Mold
(mm)
Pch Si ngle
2SJ610 250 2 20 2550 24
2SJ681 60 5 20 250 170 15
New PW-Mold2
(mm)
Pch Si ngle
2SJ680 200 2.5 20 2000 10
DPAK
(mm)
Pch Si ngle TJ15P04M3 40 20 15 29 48 36 26
TJ10S04K3L 40 10/20 10 27 62 44 19
TJ20S04K3L 40 10/20 20 41 32 22.2 37
TJ40S04K3L 40 10/20 40 68 13 9.1 83
TJ60S04K3L 40 10/20 60 90 9.4 6.3 125
TJ80S04K3L 40 10/20 80 100 7.9 5.2 158
TJ8S06K3L 60 10/20 8 27 130 104 19
TJ15S06K3L 60 10/20 15 41 63 50 36
TJ30S06K3L 60 10/20 30 68 28 21.8 80
TJ50S06K3L 60 10/20 50 90 17.4 13.8 124
DPAK+
(mm)
Pch Si ngle
TJ60S06K3L 60 10/20 60 100 7.9 3.2 156
TJ80X04M3L 40 10/20 80 150 5.9 3.9 250
TJ80X06M3L 60 10/20 80 150 11.4 7.6 250
2SJ619 100 16 75 320 210 48
TFP
(mm)
Pch Si ngle
2SJ620 100 18 125 120 90 140
2SJ438 60 5 25 280 190 22
TO-220NIS
(mm)
Pch Si ngle
2SJ313 180 1 25 5000
TJ70A06J3 60 70 54 10 8 246
TJ9A10M3 100 20 9 19 170 47
TJ11A10M3 100 20 11 24 130 69
TO-220SIS
(mm)
Pch Si ngle
TJ20A10M3 100 20 20 35 90 120
Contac t t he Toshiba sa les repres entative for inf ormation about RoHS compliance bef ore y ou purchase any components.
40
2011/9 SCE0004L
RDS(ON) Max (m)
Package Polarity Part Number VDSS (V) ID (A) PD (W) VGS
1.8 V VGS
2.0 V VGS
2.5 V VGS
4 V VGS
4.5 V VGS
6 V VGS
7 V VGS
10 V
Qg
(nC)
(typ.)
Internal
Connections
TJ100F04M3L 40 100 250 5.4 3.6 250
TJ150F04M3L 40 150 300 4.2 2.8 390
TJ100F06M3L 60 100 250 10.7 7.1 250
TJ120F06J3 60 120 300 8 258
TO-220SM(W)
(mm)
Pch Si ngle
TJ150F06M3L 60 150 300 6.1 5.6 420
2SJ200 180 10 120 830
TO-3P(N)
(mm)
Pch Si ngle
2SJ618 180 10 130 370 35
TO-3P(N)IS
(mm)
Pch Single 2SJ440 180 9 80 830
TO-3P(L)
(mm)
Pch Si ngle 2SJ201 200 12 150 625
Contac t t he Toshiba sa les repres entative for inf ormation about RoHS compliance bef ore y ou purchase any components.
41
2011/9 SCE0004L
|VDSS| 60 V (Power MOSFE Ts) (Complementary MOSFETs)
RDS(ON) Max (m)
Package Polarity Part Number
VDSS
(V) VGSS
(V) ID
(A) |VGS|
1.5 V |VGS|
1.8 V |VGS|
2.5 V |VGS|
4.0 V |VGS|
4.5 V |VGS|
10 V
Ciss
(pF)
Qg
(nC)
(typ.) Internal FET Internal
Connections
20 10 1.6 247 190 139 119 265
SSM6L39TU 20 8 1.5 430 294 213 250 SSM6N39TU
SSM6P39TU (1)
30 12 0.5 180 145 245
SSM6L12TU 20 12 0.5 430 260 218 SSM6K24FE
SSM6J25FE (1)
30 20 1.6 182 180
SSM6L40TU 30 20 1.4 403 120 SSM6N40TU
SSM6P40TU (1)
20 10 0.1 15 4.0 3.0 9.3 SSM3K16FU
SSM6E03TU 20 8 1.8 335 180 144 335 SSM3J109TU (3)
20 10 0.1 15 4.0 3.0 9.3 SSM3K16FU
SSM6E02TU 20 8 1.8 364 204 136 56 8 (3)
20 10 0.05 10 11 SSM3K04FE
UF6
0.7
2.1
2.0
(mm)
N-ch P-ch
SSM6E01TU 12 12 1 240 160 310 (2)
20 10 0.8 600 450 330 240 90 2.0 SSM6N42FE (1)
ES6
(mm)
N-ch P-ch SSM6L14FE *
20 8 0.72 1040 670 440 300 110 1.76 SSM6P41FE (1)
30 20 4 77 50
10 (4)
VS-8
(mm)
N-ch P-ch TPCF8402
30 20 3.2 105 72
14 (4)
30 20 4 80 50
4.6
TPCP8404 30 20 4 80 50 13 (4)
40 20 4.7 60 40
16
TPCP8403 40 20 3.4 105 70 15 (4)
30 20 6.5 29 26
13.8
TPCP8405 30 20 6 42 31.3 24.1 (4)
40 20 6 36 32
13.7
PS-8
(mm)
N-ch P-ch
TPCP8406 40 20 5 53.4 43.2 24.2 (4)
30 20 9 21 17
1190 17
TPCP8407 30 20 7.4 23 29 1650 39 (4)
40 20 6.1 43.2 32
850 14
SOP-8
(mm)
N-ch P-ch
TPCP8408 40 20 5.3 53.4 36 1105 24 (4)
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product
Internal Connect ions
(1) (2) (3) (4)
Q2
Q1
Q2
Q1
Q1
Q2
86
123
7 5
4
Note: Some MOSFETs do not have a Zener diode between gate and source.
The internal connection diagrams only show the general configurations of the circuits.
42
2011/9 SCE0004L
(Load SW)
RDS(ON) Max (m)
Package Polarity Part Number
VDSS
(V) VGSS
(V) ID
(A) PD
(W) |VGS|
1.5 V |VGS|
1.8 V |VGS|
2.0 V |VGS|
2.5 V |VGS|
4V |VGS|
4.5 V |VGS|
7V |VGS|
10 V
Ciss
(pF)
Qg
(nC)
(typ.)
Internal
Connections
PS-8
(mm)
Load SW TPCP8401 12 8 5.5 1.96 103 58 38 20 (1)
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
(MOSFET BipTr)
RDS(ON) Max (m)
Package Polarity Part Number
VDSS
(V) VGSS
(V) ID
(A) PD
(W) VGS
1.5 V VGS
1.8 V VGS
2.0 V VGS
2.5 V VGS
4V VGS
4.5 V VGS
7V VGS
10 V
Ciss
(pF)
Qg
(nC)
(typ.)
Internal
Connections
PS-8
(mm)
P-ch
BipTr TPCP8J01 32 20 5.5 2.14 49 35 34 (2)
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
Internal Connect ions
(1) (2)
8 6 7 5
1 2 3 4
8 6
1 2 3
7 5
4
R1
R2
Note: Some MOSFETs do not have a Zener diode between gate and source.
The internal connection diagrams only show the general configurations of the circuits.
43
2011/9 SCE0004L
(MOSFET SBD)
MOSFET SBD
RDS(ON) Max (m) VF Max (V)
Package Polarity Part Number
VDSS
(V) VGSS
(V) ID
(A) PD
(W) |VGS|
1.8 V |VGS|
2.0 V |VGS|
2.5 V |VGS|
4.0 V |VGS|
4.5 V |VGS|
10 V
Ciss
(pF) VR
(V) IO
(A) IF
1.0 A IF
0.5 A IF
0.3 A IF
0.1 A
Qg
(nC)
(typ.)
Internal
Connec-
tions
SSM5G10TU 20 8 1.5 430 294 213 250 20 0.7 0.39 (1)
SSM5G09TU 12 8 1.5 200 130 550 12 0.5 0.43 0.39 (1)
SSM5G02TU 12 12 1 240 160 310 12 0.5 0.43 0.39 (1)
UFV
0.7
2.1
2.0
(mm) SSM5G11TU 30 20 1.4 403 226 120 30 0.7 0.41 (1)
UDFN6
(mm)
SSM6G18NU * 20 8 2 2 194 152 122 270 30 1 0.58 0.45 3.6 (5)
VS-8
(mm)
TPCF8B01 20 8 2.7 1.35 300 160 110 20 1 0.49 6 (4)
PS8
2.8
2.9 0.8
(mm)
Pch SBD
TPCP8BA1 20 12 1.3 260 180 370 25 0.7 0.41 (2)
SSM5H10TU 20 10 1.6 190 139 119 260 20 0.7 0.39 (3)
SSM5H08TU 20 12 1.5 220 160 125 20 0.5 0.45 (3)
SSM5H11TU 30 20 1.6 182 122 180 30 0.7 0.41 (3)
SSM5H16TU 30 12 1.9 296 177 133 123 30 0.8 0.45 0.36 (3)
SSM5H01TU 30 20 1.4 450 200 106 20 0.5 0.45 (3)
UFV
0.7
2.1
2.0
(mm) SSM5H07TU 20 20 1.2 540 300 36 12 0.5 0.43 0.39 (3)
SMV
2.8
2.9
1.6
(mm)
Nch SBD
SSM5H14F 30 12 3 138 94 78 270 45 0.1 0.6 (3)
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product
Internal Connect ions
(1) (2) (3) (4) (5)
8 6
1 2 3
75
4
Note: Some MOSFETs do not have a Zener diode between gate and source.
The internal connection diagrams only show the general configurations of the circuits.
44
2011/9 SCE0004L
MOSFET SBD
RDS(ON) Max (m) VF Max (V)
Package Polarity Part Number
VDSS
(V) VGSS
(V) ID
(A) PD
(W) |VGS|
1.8V |VGS|
2.0 V |VGS|
2.5 V |VGS|
4.0 V |VGS|
4.5 V |VGS|
10 V
Ciss
(pF) VR
(V) IO
(A) IF
1.0 A IF
0.5 A IF
0.3 A IF
0.1 A
Qg
(nC)
(typ.)
Internal
Connec-
tions
TPCP8AA1 20 12 1.6 140 105 306 25 0.7 0.41 (2)
PS8
2.8
2.9 0.8
(mm) TPCP8A05-H
◇
30 20 8 1.68 21.9 17.5 1300 16 (1)
TPC8A05-H
◇
30 20 10 1.9 17.6 13.3 15 (1)
TPC8A06-H
◇
30 20 12 1.9 12.9 10.1 1400 19 (1)
TPC8A03-H
◇
30 20 17 1.9 7 5.6 36 (1)
SOP-8
(mm) TPC8A04-H
◇
30 20 18 1.9 4.5 3.6 56 (1)
TPCA8A05-H
◇
30 20 20 30 17.2 12.9 15 (1)
TPCA8A02-H
◇
30 20 34 45 6.7 5.3 36 (1)
TPCA8A08-H
◇
30 20 38 45 5.3 4.2 3500 48 (1)
SOP Advance
(mm)
N-ch
SBD
TPCA8A04-H
◇
30 20 44 45 4.1 3.2 59 (1)
◇
: Monolithic
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
Internal Connect ions
(1) (2)
8 6
1 2 3
7 5
4
The internal connection diagrams only show the general configurations of the circuits.
45
2011/9 SCE0004L
(MOSFET Switching Diodes) MOSFET Di
RDS(ON) Max (m) VF Max (V)
Package Polarity Part Number
VDSS
(V) VGSS
(V) ID
(A) PD
(W) VGS
1.5 V VGS
1.8 V VGS
2.5 V VGS
4.0 V VGS
4.5 V VGS
10 V
Ciss
(pF) VR
(V) IO
(A) trr
(ns) IF
1 mA IF
10 m
A
IF
0.1 A
Qg
(nC)
(typ.)
Internal
Connec-
tions
UFV
0.7
2.1
2.0
(mm)
N-ch
Switching
diodes SSM5H90TU 20 10 2.4 157 110 80 65 400 80 0.1 1.6 1.2 (1)
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
(MOSFET Zener Diodes) MOSFET Ze-Di
RDS(ON) Max (m) VZ (V) IR (A) VF Max (V)
Package Polarity Part Number
VDSS
(V) VGSS
(V) ID
(A) PD
(W) VGS
1.8 V VGS
2.0 V VGS
2.5 V VGS
4.0 V VGS
4.5 V VGS
10 V
Ciss
(pF) @IZ
(mA) @VR
(V) IF
1.0 A IF
0.5 A IF
0.3 A
Qg
(nC)
(typ.)
Internal
Connec-
tions
PS8
2.8
2.9 0.8
(mm)
N-ch
Zener
diodes TPCP8R01 60 20 2.0 440 300 140 43 2 0.5 33 (2)
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
Internal Connect ions
(1) (2)
The internal connection diagrams only show the general configurations of the circuits.
46
2011/9 SCE0004L
Bipolar Pow er Tr ansistors
Radio-Frequency Switching Power Transis tors (2SA/2SC/TTA/TTC Series)
VCEO
(V)
IC(A) 10/(15) (18)/20 (25)/30 40/(45) 50/(60)
0.2 2SA1483 (◎)
(45 V)
0.8 2SA1426 (§)
2SA1204 2SC2884 (◎)
1 TPC6D02 (&)(△) 2SA2070 (◎)
(15 V) TPC6701 (W)(△)
HN4B101J (M)(V) 2SC5810 (◎)
(NPN: 1.2 A) TPC6901A (M)(△)
(PNP: 0.7 A)
TPCP8901 (M)(P)
(PNP: 0.8 A)
TTA007 * TTC007 *(
)
TPC6604 * TPC6504 *(△)
1.2 TPC6D03 (&)(△) 2SA1734 (◎)
TPCP8801 (W)(P)
1.5 2SA2058 (
) 2SA2065 ( )2SA966 2SC2236 (
)
2SC5784 ( ) 2SA1203 (◎)
2SA2069 (◎)
2SC5819 (◎)
TPC6503 (△)
S3F56 (△)
2 2SA1160 (
) 2SA1020 2SC2655 (
)
2SA1430 2SC3670 (
§) TPCP8902 (M)(P) 2SC3673 (
§) 2SA1241 2SC3076 (◇)
2SA2066 (◎) (NPNPNP) 2SA1382 (
)
2SC5755 (
) TPC6902 (M)(△) 2SA2056 (
)
2SC5785 (◎) (NPNPNP) : PNP-1.7A TPC6601 (△)
TPC6501 (△) HN4B102J (M)(V) TPCP8701 (W)(P)
TPC6602 (△) (NPNPNP) 2SA2060 (◎)
TPCP8504 (P) 2SA1428 2SC3668 (§)
2SA1680 2SC4408 (
)
2.5 2SA2061 ( ) 2SC5692 (
)
2SC6033 (
)
TPCP8602 (P)
3 2SA2059 (◎) 2SC5976 (
) 2SC3422 (@) 2SA1761 2SC4604 (
)
TPCP8F01 ($)(P) TPCP8H02 ($)(P) 2SA1869 2SC4935 (▲)
2SC4682 (
) TPC6603 (△)
(15 V) TPCP8G01 * ($)(P) 2SC5712 (◎)
2SC4683 (
§) TPC6502 (△)
(15 V) TPCP8505 (P)
2SC6126 (◎)
TPCP8511 *(P)
3.5 2SC5738 ( )
The products shown in bold are also manufactured in offshore fabs. *: New product
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. : Being planned
Legend Package
Through-Hole Package Ammo Packaging Surface-Mount Package Other Remarks
() LSTM ○ (
) TSM (%) Darlington
(§) MSTM ○ (
◎) PW-Mini (#) Built-in zener diode
(@) TO-126 × (
◇
) PW-Mold Part number in italic signifies built in Freewheel diode.
(▲) TO-220NIS × (
△) VS-6 2SA****/2SC****: Compl e me n tary
(
◇
) PW-Mold × (P) PS-8 (&) 2 -in-1 (tr ansi s t or diode)
(▽) TO-3P(N) × (V) S M V ($) 2-in-1 (transi s t or S-MOS)
(
▼
) TO-3P(N)IS × () TFP (W) 2-in-1 (NPN (or PNP) 2)
(※
) TO-3P(L) × (M) 2-in-1 (NPN PNP)
47
2011/9 SCE0004L
VCEO
(V)
IC(A) 10/(15) (18)/20 (25)/30 40/(45) 50/(60)
4 2SC5714 (◎) 2SC5906 (
) 2SC5703 (
)
2SC5713 (◎) 2SC6125 (◎)
S3F61 (△) S3F62 (△)
TPCP8601 (P)
5 2SA1242 (◇) 2SC6062 (
) 2SA1244 2SC3074 (◇)
2SA1431 (
§) 2SA1931 2SC4881 (▲)
2SC3072 (◇) 2SA2097 (◇)
2SC5886 (◇)
2SC3671 (
§) 2SC5886A (◇)
TPCP8H01 ($)(P)
S3H32 (◇)
2SC6052 (◇)
7 2SC6000 (◇)
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. : Being planned
Legend Package
Through-Hole Package Ammo Packaging Surface-Mount Package Other Remarks
() LSTM ○ (
) TSM (%) Darlington
(§) MSTM ○ (
◎) PW-Mini (#) Built-in zener diode
(@) TO-126 × (
◇
) PW-Mold Part number in italic signifies built in Freewheel diode.
(▲) TO-220NIS × (
△
) VS-6 2SA****/2SC****: Comple mentary
(
◇
) PW-Mold × (P) PS -8 (&) 2-in -1 (tr a nsis tor diode)
(
▽
) TO-3P(N) × (V) SM V ($) 2- in-1 (tra nsist or S-MOS)
(
▼
) TO-3P(N)IS × () TFP (W) 2-in-1 (NPN (or PNP) 2)
(※
) TO-3P(L) × (M) 2-in-1 (NPN PNP)
48
2011/9 SCE0004L
Radio- Frequency Switching Power Transistors (2SA/2SC/TTA/T TC Series) (Continued)
VCEO
(V)
IC(A) 80 100 120 (140)/150 160
0.05 2SA1145 (
)
2SA1360 2SC3423 (@)
2SA949 2SC2229 (
)
0.1 2SC2230 (
)
0.4 2SA817A (
)
2SA1202 2SC2882 (◎)
0.8 2SA965 2SC2235 (
)
2SA1425 2SC3665 (§)
1 TPCP8603 TPCP8507 (P)
TPCP8510 *(P)
2SC6061 (
)
2SA1013 2SC2383 (
)
1.5 2SC2073A (▲) 2SA1225 (◇)
2SA2219 *2SC6139 *(§)
TTA004 *TTC004 *(@)
2 2SA1315 2SC3328 (
)
2SA1429 2SC3669 (
§) TPCP8501 (P)
2SC6079 (
§)
2SA2206 2SC6124 (◎)
3 2SA1926 (
§)
TTA003 (◇)
2SC6076 (◇)
TTC009 * (▲)
5 2SC3303 (◇)
6 2SC4688 (
▼
)
2SC5196 (
▽)
8 2SC4689 (
▼
)
2SC5197 (▽)
10 2SC4690 (
▼
)
(140 V)
2SA1941 2SC5198 (
▽)
(140 V)
12 2SA1452A 2SC3710A (▲) 2SA1942 2SC5199 (※)
18 TTA0001 *TTC0001 *(▽)
TTA0002 *TTC0002 *(※)
The products shown in bold are also manufactured in offshore fabs. *: New product
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
Legend Package
Through-Hole Package Ammo Packaging Surface-Mount Package Other Remarks
() LSTM ○ (
) TSM (%) Darlington
(§) MSTM ○ (
◎) PW-Mini (#) Built-in zener diode
(@) TO-126 × (
◇
) PW-Mold Part number in italic signifies built in Freewheel diode.
(▲) TO-220NIS × (
△
) VS-6 2SA****/2SC****: Comple mentary
(
◇
) PW-Mold × (P) PS -8 (&) 2-in -1 (tr a nsis tor diode)
(▽) TO-3P(N) × (V) S M V ($) 2-in-1 (transi s t or S-MOS)
(
▼
) TO-3P(N)IS × () TFP (W) 2-in-1 (NPN (or PNP) 2)
(※
) TO-3P(L) × (M) 2-in-1 (NPN PNP)
49
2011/9 SCE0004L
VCEO
(V)
IC(A) (180)/200 230 300 (370)/400
0.05 2SC5122 (
)
2SC5307 (◎)
0.1 2SC2230A (
) 2SA1432 2SC3672 (§)
(180 V)
2SC4544 (▲)
2SA1384 2SC3515 (◎)
0.3 TPCP8604 (P)
0.5 TTC013 * (
◎)
(350 V)
2SA1971 (
◎)
2SA1972 (
)
0.8 2SC5458 (◇)
1 2SA1837 2SC4793 (▲) 2SC5930 (
§) 2SC5549 (
)
(285 V)
2SC6010 (
§) 2SC6042 (
§)
TTC011 * (@) (285 V) (375 V)
2SC6034 (
§) 2SC6040 (
§)
(285 V) (410 V)
TTC005 *(◎) TPCP8508 (P)
(285 V) (375 V)
1.5 TTC008 *(◇) 2SC6142 (◇)
(285 V) (375 V)
TTC003 * (
◇)
TTC13003L * (
)
2 2SC5171 (▲)
(180 V) 2SC5548 (◇)
(370 V)
2SC5548A (◇)
2SA2034
TTC012 * (
◇)
(375 V)
3 2SC5459 (▲)
5 2SC5172 (▲)
2SC6138 (
◇)
(375 V)
10 2SC5352 (▽)
12 2SA2120 2SC5948 (▽)
15 2SA2121 2SC5949 (※ ) 2SA1943 2SC5200 ( ※ )
2SA1962 2SC5242 (
▽)
2SA1986 2SC5358 (▽)
2SA1987 2SC5359 (※ )
TTA1943 *TTC5200 * (
※ )
The products shown in bold are also manufactured in offshore fabs. *: New pro d u ct
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. : Being planned
Legend Package
Through-Hole Package Ammo Packaging Surface-Mount Package Other Remarks
() LSTM ○ (
) TSM (%) Darlington
(§) MSTM ○ (
◎) PW-Mini (#) Built-in zener diode
(@) TO-126 × (
◇
) PW-Mold Part number in italic signifies built in Freewheel diode.
(▲) TO-220NIS × (
△
) VS-6 2SA****/2SC****: Comple mentary
(
◇
) PW-Mold × (P) PS -8 (&) 2-in -1 (tr a nsis tor diode)
(
▽
) TO-3P(N) × (V) SM V ($) 2- in-1 (tra nsist or S-MOS)
(
▼
) TO-3P(N)IS × () TFP (W) 2-in-1 (NPN (or PNP) 2)
(※
) TO-3P(L) × (M) 2-in-1 (NPN PNP)
50
2011/9 SCE0004L
Radio- Frequency Switching Power Transistors (2SA/2SC/TTA/T TC Series) (Continued)
VCEO
(V)
IC(A) (550)/600 800 1000/(1200)
0.05 2SC5201 (
) 2SC5460 (@) 2SC4686 (▲)
2SC5466 (▲) 2SC4686A (▲)
2SC6127 (◇) (1200 V)
0.5 2SA2142 (◇)
0.8 2SC3405 (◇)
1 2SA2184 (◇)
(550 V)
3 2SC5353 (▲)
5 2SC5354 (▽)
10 2SC3307 (※)
The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
Legend Package
Through-Hole Package Ammo Packaging Surface-Mount Package Other Remarks
() LSTM ○ (
) TSM (%) Darlington
(§) MSTM ○ (
◎
) PW-Mini (#) Built-in zener diode
(@) TO-126 × (
◇
) PW-Mold Part number in italic signifies built in Freewheel diode.
(▲) TO-220NIS × (
△
) VS-6 2SA****/2SC****: Comple mentary
(
◇
) PW-Mold × (P) PS-8 (&) 2 -in-1 (tr ansi s t or diode)
(▽) TO-3P(N) × (V) S M V ($) 2-in-1 (transi s t or S-MOS)
(
▼
) TO-3P(N)IS × () TFP (W) 2-in-1 (NPN (or PNP) 2)
(※
) TO-3P(L) × (M) 2-in-1 (NPN PNP)
51
2011/9 SCE0004L
Low-Fr equency Powe r Transistors (2SB/2SD/TTB/TTD Series)
VCEO
(V)
IC(A) 30 40 60/(65)
0.8 2SD2719 (#)(%)(
)
1 2SD2686 (#)(%)(◎)
1.5 2SD1140 (%)(
)
2SD1631 (%)(
§)
2
2SD2088 (#)(%)(
)
2SD2695 (#)(%)(
)
2SD2352 (▲)
3 2SB907 (%)(◇)
2SB906 2SD1221 (◇)
2SB1375 2SD2012 (▲)
TTB001 * ()
TTB002 * (
◇)
4 2SD2204 (#)(%)(▲)
(65 V)
5 2SD2131 (#)(%)(▲)
The products shown in bold are also manufactured in offshore fabs. *: New product
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
Legend Package
Through-Hole Package Ammo Packaging Surface-Mount Package Other Remarks
() LSTM ○ (
) TSM (%) Darlington
(§) MSTM ○ (
◎
) PW-Mini (#) Built-in zener diode
(@) TO-126 × (
◇
) PW-Mold Part number in italic signifies built in Freewheel diode.
(▲) TO-220NIS × (
△
) VS-6 2SA****/2SC****: Comple mentary
(
◇
) PW-Mold × (P) PS-8 (&) 2 -in-1 (tr ansi s t or diode)
(▽) TO-3P(N) × (V) S M V ($) 2-in-1 (transi s t or S-MOS)
(
▼
) TO-3P(N)IS × () TFP (W) 2-in-1 (NPN (or PNP) 2)
(※
) TO-3P(L) × (M) 2-in-1 (NPN PNP)
52
2011/9 SCE0004L
Low-Frequency Power Transistors (2S B/2SD/TTB/TTD Series) (Continued)
VCEO
(V)
IC(A) 80 100 120 150/(160) 450
0.9 TPCP8L01(1) (&)(P)
1.5 2SB905 2SD1220 (◇)
2 2SB1067 2SD1509 (%)(@)
2SB1457 2SD2206 (%)(
)
2SD2536 (#)(%)(
)
3 2SB1495 2SD2257 (%)(▲)
2SD2092 (
▲)
2SD2129 (%)(▲)
4 2SB908 2SD1223 (%)(◇) 2SB1481 2SD2241 (%)(▲)
5 2SD2079 (%)(▲)
2SD2604 (#)(%)(▲)
7 2SB1020A 2SD1415A (%)(▲)
8 2SD2636 (%)(▽)
(160 V)
15 2SD1662 (%)(▽) 2SD1314 (%)(※)
30 2SD1525 (%)(※)
(1) NPN HED (200 V/1 A)
The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
Legend Package
Through-Hole Package Ammo Packaging Surface-Mount Package Other Remarks
() LSTM ○ (
) TSM (%) Darlington
(§) MSTM ○ (
◎
) PW-Mini (#) Built-in zener diode
(@) TO-126 × (
◇
) PW-Mold Part number in italic signifies built in Freewheel diode.
(▲) TO-220NIS × (
△) VS-6 2SA****/2SC****: Comple mentary
(
◇
) PW-Mold × (P) PS-8 (&) 2 -in-1 (tr ansi s t or diode)
(▽) TO-3P(N) × (V) S M V ($) 2-in-1 (transi s t or S-MOS)
(
▼
) TO-3P(N)IS × () TFP (W) 2-in-1 (NPN (or PNP) 2)
(※
) TO-3P(L) × (M) 2-in-1 (NPN PNP)
53
2011/9 SCE0004L
Transistors for Power Amps (Dri ve Stage)
Part Number IC VCEO PC fT
NPN PNP (A) (V) (W)
Tc 25°C
(
Ta 25°C)
(MHz)
Typ. (NPN/PNP) VCE (V) IC (A) Package
2SC2235 2SA965 0.8 120
0.9 120 5 0.1 LSTM
2SC3665 2SA1425 0.8 120
1 120 5 0.1
2SC6139 * 2SA2219 * 1.5 160
1 100 10 0.1 MSTM
2SC3423 2SA1360 0.05 150 5 200 5 0.01
TTC004 * TTA004 * 1.5 160 10 100 10 0.1 TO-126
2SC4793 2SA1837 1 230 20 100/70 10 0.1 TO-220NIS
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product
(Output Stage)
Part Number IC VCEO PC fT
NPN PNP (A) (V) (W)
Tc 25°C
(MHz)
Typ. (NPN/PNP) VCE (V) IC (A) Package
2SC5198 2SA1941 10 140 100 30 5 1
TTC0001 * TTA0001 * 18 160 150 30 10 1
2SC5242 2SA1962 15 230 130 30 5 1
2SC5358 2SA1986 15 230 150 30 5 1
2SC5948 2SA2120 12 200 200 30/25 5 1
TO-3P(N)
2SC5199 2SA1942 12 160 120 30 5 1
TTC0002 * TTA0002 * 18 160 180 30 10 1
2SC5200 2SA1943 15 230 150 30 5 1
TTC5200 * TTA1943 * 15 230 150 30 5 1
2SC5359 2SA1987 15 230 180 30 5 1
2SC5949 2SA2121 15 200 220 30/25 5 1
TO-3P(L)
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product
54
2011/9 SCE0004L
Transistors for MOS Gate Drivers/Compact Motor Drivers (2- in- 1 T r ansis tors)
Absolute Maximum Ratings VCE(sat)
VCEO IC ICP PC (Note 1) hFE VCE IC (V) IC IB
Part Number Polarity (V) (A) (A) (mW) Min Max (V) (A) Max (A) (mA) Package Circuit Configuration
(Top View)
PNP 30 1.0 5 550 200 500 2 0.12 0.2 0.4 13
HN4B101J NPN 30 1.2 5 550 200 500 2 0.12 0.17 0.4 13
PNP 30 1.8 8 750 200 500 2 0.2 0.2 0.6 20
HN4B102J NPN 30 2 8 750 200 500 2 0.2 0.14 0.6 20
SMV
PNP NPN
5 4
1 32
PNP 50 0.7 5 400 200 500 2 0.1 0.23 0.3 10
TPC6901A NPN 50 1 5 400 400 1000 2 0.1 0.17 0.3 6
PNP 30 1.7 8 700 200 500 2 0.2 0.2 0.6 20
TPC6902 NPN 30 2 8 700 200 500 2 0.2 0.14 0.6 20
VS-6
NPN PNP
6 4
1 32
5
PNP 50 0.8 5 830 200 500 2 0.1 0.2 0.3 10
TPCP8901 NPN 50 1 5 830 400 1000 2 0.1 0.17 0.3 6
PNP 30 2 8 890 200 500 2 0.2 0.2 0.6 20
TPCP8902 NPN 30 2 8 890 200 500 2 0.2 0.14 0.6 20
PS-8
NPN PNP
5
41 32
8 67
Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area 645 mm2, glass-epoxy, t 1.6 mm) and is in single-device operation.
Copper thickness: 35 m for the TPC6901A and 70 m for the other transistors
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
(1-in-1 Transistors) Absolute Maximum Ratings VCE(sat)
VCEO IC PC (Note 1) hFE VCE IC (V) IC IB
Part Number Pol arity (V) (A) (mW) Min Max (V) (A) Max (A) (mA)
Complementary Package Remarks
2SA2058 10 1.5 500 200 500 2 0.2 0.19 0.6 20 2SC5755
2SA2065 20 1.5 500 200 500 2 0.15 0.14 0.5 17 2SC5784
2SA2061 20 2.5 625 200 500 2 0.5 0.19 1.6 53 2SC5735
TTA007 * 50 1 700 200 500 2 0.1 0.2 0.3 10 TTC007 *
2SA2056
PNP
50 2 625 200 500 2 0.3 0.20 1.0 33 2SC5692
2SC5755 10 2 500 400 1000 2 0.2 0.12 0.6 12 2SA2058
2SC5784 20 1.5 500 400 1000 2 0.15 0.12 0.5 10 2SA2065
2SC5738 20 3.5 625 400 1000 2 0.5 0.15 1.6 32 2SA2061
2SC6062 30 5 800 250 400 2 0.5 0.12 1.6 53 (Note 2)
TTC007 * 50 1 700 400 1000 2 0.1 0.12 0.3 6 TTA007 *
2SC5692
NPN
50 2.5 625 400 1000 2 0.3 0.14 1.0 20 2SA2056
TSM
2.8
2.9
1.6
(mm)
2SA2066 10 2 1000 200 500 2 0.2 0.19 0.6 20 2SC5785
2SA2069 20 1.5 1000 200 500 2 0.15 0.14 0.5 17 2SC5819
2SA2059 20 3 1000 200 500 2 0.5 0.19 1.6 53 2SC5714
2SA2070 50 1 1000 200 500 2 0.1 0.20 0.3 10 2SC5810
2SA2060
PNP
50 2 1000 200 500 2 0.3 0.20 1.0 33 2SC5712
2SC5785 10 2 1000 400 1000 2 0.2 0.12 0.6 12 2SA2066
2SC5819 20 1.5 1000 400 1000 2 0.15 0.12 0.5 10 2SC2069
2SC5714 20 4 1000 400 1000 2 0.5 0.15 1.6 32 2SA2059
2SC5810 50 1 1000 400 1000 2 0.1 0.17 0.3 6 2SA2070
2SC5712 50 3 1000 400 1000 2 0.3 0.14 1 20 2SA2060
2SC6126
NPN
50 3 1000 250 400 2 0.3 0.18 1 33
PW-Mini
4.2
4.6
2.5
(mm)
(Note 2)
Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area 645 mm2, t 1.6 mm). *: New product
Note 2: Ultra-high-speed using by the Super Hi-Met process and Low VCE(sat) products.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
55
2011/9 SCE0004L
Transistors for Switching Power S upplies (For AC/DC Converters)
Absolute Maximum Ratings (Ta 25°C)
Part Number Applications VCBO (V) VCEO (V) IC (A) Pc (W)
Tc 25°C
(
Ta 25°C)
Package
2SC5930 1 1 MSTM
2SC6010 1 1 MSTM
2SC6034 1 1 MSTM
TTC008 *
285
1.5 1.1 PW-Mold
2SC5548 370 2 15 PW-Mold
2SC5548A 2 15 PW-Mold
2SC5458 0.8 10 PW-Mold
TTC003 * 1.5 1.1 PW-Mold
2SC5459 3 25 TO-220NIS
2SC5172 5 25 TO-220NIS
2SC5352
600
400
10 80 TO-3P(N)
2SC6042 375 1 1 MSTM
2SC6040 410 1 1 MSTM
2SC6142 1.5 1.1 PW-Mold
TTC012 *
800 375 2 1.1 PW-Mold
2SC5353 3 25 TO-220NIS
2SC5354 5 100 TO-3P(N)
2SC3307
Switching regulator
900 800 10 150 TO-3P(L)
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product
Current Control Transistors for LED Backlighting
Absolute Maximum Ratings VCE(sat)
VCEO IC PC hFE VCE IC (V) IC IB
Part Number (V) (A) (W) Min Max (V) (A) Max (A) (mA) Package
TTC005 * 285 1 1.1 (Note 1) 100 200 5 0.1 1 0.6 75 PW-Mini
TTC011 * 230 1 10 (Note 2) 100 320 5 0.2 1 0.3 30 TO-126
TTC013 * 350 0.5 1 (Note 1) 100 200 5 0.05 0.3 0.16 20 PW-Mini
Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area 645 mm2, glass-epoxy, t 1.6 mm). *: New product
Note 2: Tc 25°C
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
56
2011/9 SCE0004L
Transistors for High-Voltage Power Supplies (For DC/DC Converters)
Absolute Maximum Ratings hFE VCE (sat) (V)
Part Number VCEX (V) VCEO (V) IC (A) Pc (W) Min Max
VCE (V) IC (A) Max IC (A) IB (mA) Package
2SC6061 150 120 1 0.625 (Note 1) 120 300 2 0.1 0.14 0.3 10 TSM
TPCP8510 * 150 120 1 1.1 (Note 1) 120 300 2 0.1 0.14 0.3 10 PS-8
TPCP8507 150 120 1 1.25 (Note 1) 120 300 2 0.1 0.14 0.3 10 PS-8
2SC6076 160 80 3 10 (Note 2) 180 450 2 0.5 0.5 1 100 PW-Mold
2SC6124 160 80 2 1 (Note 1) 100 200 2 0.5 0.5 1 100 PW-Mini
TTC009 * 160 80 3 15 (Note 2) 100 200 2 0.5 0.5 1 100 TO-220NIS
2SC6079 160 80 2 1 (Note 3) 180 450 2 0.5 0.5 1 100 MSTM
Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area 645 mm2, glass-epoxy, t 1.6 mm). *: New product
Note 2: Tc 25°C
Note 3: Ta 25°C
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
(Transi st o rs for Droppers) Absolute Maximum Ratings hFE VCE (sat) (V)
Part Number VCEO (V) IC (A) Pc (W)
Tc 25°C Min Max
VCE (V) IC (A) Max IC (A) IB (mA) Package
2SB906 60 3 20 60 200 5 0.5 1.7 3 300 PW-Mold
TTB001 * 60 3 36 100 250 5 0.5 1.7 3 300 TFP
TTB002 * 60 3 25 100 250 5 0.5 1.7 3 300 PW-Mold
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product
(High-Voltage Transistors) Absolute Maximum Ratings
Part Number VCEO (V) IC (A) Pc (W) Package Circuit Configuration
(Top View) Remarks
2SA1972 400 0.5 0.9 LSTM
2SA1971 400 0.5 1 PW-Mini
TPCP8604 400 0.3 1 PS-8 SMD
2SA2184 550 1 1 PW-Mold SMD only
2SA2142 600 0.5 10 PW-Mold SMD only
2SC5122 400 0.05 0.9 LSTM
2SC5307 400 0.05 1 PW-Mini
2SC5201 600 0.05 0.9 LSTM
2SC6127 800 0.05 10 PW-Mold SMD only
2SC5460 800 0.05 10 TO-126
2SC5466 800 0.05 10 TO-220NIS
2SC4686A 1200 0.05 10 TO-220NIS
2SC5563 1500 0.02 10 TO-220NIS
TPCP8604
PNP
5
41 32
8 67
The circuit configuration diagrams only show the general configurations of the circuits .
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
57
2011/9 SCE0004L
Low Sat ur ation Voltage Tra nsistors (Small Surface-Mount Packages for Personal Equipments)
Absolute Maximum Ratings hFE VCE (sat) (V)
Part Number Configuration VCEO (V) IC (A) ICP (A) Pc (mW)
(Note 1) Pc (mW)
(Note 1)t 10 s Min Max
VCE (V) IC (A) Max IC (A) IB (mA) Marking Package
2SA2058 10 1.5 2.5 500 750 200 500 2 0.2 0.19 0.6 20 WM
2SA2065 20 1.5 2.5 500 750 200 500 2 0.15 0.14 0.5 17 WK
2SA2061 20 2.5 4 625 1000 200 500 2 0.5 0.19 1.6 53 WE
TTA007 * 50 1 2 700 1100 200 500 2 0.1 0.2 0.3 10 WH
2SA2056
PNP single
50 2 3.5 625 1000 200 500 2 0.3 0.20 1.0 33 WF
2SC5755 10 2 3.5 500 750 400 1000 2 0.2 0.12 0.6 12 WL
2SC5784 20 1.5 2.5 500 750 400 1000 2 0.15 0.12 0.5 10 WJ
2SC5738 20 3.5 6 625 1000 400 1000 2 0.5 0.15 1.6 32 WD
2SC5976 30 3 5 625 1000 250 400 2 0.3 0.14 1.0 33 WW
2SC5906 30 4 7 800 1250 200 500 2 0.5 0.2 1.6 53 WP
TSM
equivalent to
SC-59
SOT-23
2SC6062 30 5 10 800 1250 250 400 2 0.5 0.12 1.6 53 WR
TTC007 * 50 1 2 700 1100 400 1000 2 0.1 0.12 0.3 6 WG
2SC5692 50 2.5 4 625 1000 400 1000 2 0.3 0.14 1.0 20 WB
2SC6033 50 2.5 5 625 1000 250 400 2 0.3 0.18 1.0 33 WX
2SC5703 50 4 7 800 1250 400 1000 2 0.5 0.12 1.6 32 WA
2SC6061
NPN single
120 1 2 625 1000 120 300 2 0.1 0.14 0.3 10 WN
HN4B101J 30 1/1.2 5 550 850 200 500 2 0.12 0.2/0.17 0.4 13 5K
HN4B102J PNP NPN 30 1.8/2 8 750 750 200 500 2 0.2 0.2/0.14 0.6 20 5L SMV
2SA2066 10 2 3.5 1000 2000 200 500 2 0.2 0.19 0.6 20 4E
2SA2069 20 1.5 2.5 1000 2000 200 500 2 0.15 0.14 0.5 17 4D
2SA2059 20 3 5 1000 2500 200 500 2 0.5 0.19 1.6 53 4F
2SA2070 50 1 2 1000 2000 200 500 2 0.1 0.2 0.3 10 4C
2SA2060 50 2 3.5 1000 2500 200 500 2 0.3 0.20 1.0 33 4G
2SA2206
PNP single
80 2 4 1000 2500 100 200 2 0.5 0.5 1.0 100 4K
2SC5785 10 2 3.5 1000 2000 400 1000 2 0.2 0.12 0.6 12 3E
2SC5713 10 4 7 1000 2500 400 1000 2 0.5 0.15 1.6 32 2C
2SC5819 20 1.5 2.5 1000 2000 400 1000 2 0.15 0.12 0.5 10 3D
2SC6125 20 4 8 1000 2500 180 390 2 0.5 0.2 1.6 53 4L
2SC5714 20 4 7 1000 2500 400 1000 2 0.5 0.15 1.6 32 2E
2SC5810 50 1 2 1000 2000 400 1000 2 0.1 0.17 0.3 6 3C
2SC6126 50 3 6 1000 2500 250 400 2 0.3 0.18 1.0 33 4M
2SC5712 50 3 5 1000 2500 400 1000 2 0.3 0.14 1 20 2A
2SC6124
NPN single
80 2 4 1000 2500 100 200 2 0.5 0.5 1.0 100 4J
PW-Mini
equivalent to
SC-62
SOP-89
TPC6501 10 2 3.5 800 1600 400 1000 2 0.2 0.12 0.6 12 H2A
TPC6502 50 3 5 800 1600 400 1000 2 0.3 0.14 1 20 H2B
TPC6503 20 1.5 2.5 800 1600 400 1000 2 0.15 0.12 0.5 10 H2C
S3F61 10 4 6 800 1600 400 1000 2 0.5 0.15 1.6 32
S3F62 20 4 6 800 1600 400 1000 2 0.5 0.15 1.6 32
TPC6504 *
NPN single
50 1 2 800 1600 400 1000 2 0.1 0.17 0.3 6 H2D
TPC6601 50 2 3.5 800 1600 200 500 2 0.3 0.20 1.0 33 H3A
TPC6602 10 2 3.5 800 1600 200 500 2 0.2 0.19 0.6 20 H3B
TPC6603 20 3 5 800 1600 200 500 2 0.5 0.19 1.6 53 H3C
S3F56 20 1.5 2.5 800 1600 200 500 2 0.15 0.14 0.5 17
TPC6604 *
PNP single
50 1 2 800 1600 200 500 2 0.1 0.23 0.3 10 H3D
TPC6701 NPN/dual 50 1 2 660 (Note2) 400 1000 2 0.1 0.17 0.3 6 H4A
TPC6901A 50 0.7/1.0 5 400 500 200/400 500/1000 2 0.1 0.23/0.17 0.3 10/6 H6B
TPC6902 PNP NPN 30 1.7/2 8 700 1000 200 500 2 0.2 0.2/0.14 0.6 20 H6C
VS-6
(equivalent to
TSOP-6)
Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area 645 mm2, glass-epoxy, t 1.6 mm). *: New product
Note 2: Total loss of dual-device operation : Being planned
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
58
2011/9 SCE0004L
Low Sat ur ation Voltage Tra nsistors (Small Surface-Mount Packages for Personal Equipments) (Continued)
Absolute Maximum Ratings hFE VCE (sat) (V)
Part Number Configuration VCEO (V) IC (A) ICP (A) Pc (mW)
(Note 1) Pc (mW)
(Note 1)t 10 s Min Max
VCE (V) IC (A) Max IC (A) IB (mA) Marking Package
2SA2097 50 5 10 20 (Note 3) 200 500 2 0.5 0.27 1.6 53 A2097
2SA1241 50 2 3 10 (Note 3) 70 240 2 0.5 0.5 1 50 A1241
2SA1244 50 5 8 20 (Note 3) 70 240 1 1 0.4 3 150 A1244
TTA003 *
PNP single
-80 3 5 10 (Note 3) 100 200 2 0.5 0.5 1 100 A003
2SC6076 80 3 5 10 (Note 3) 180 450 2 0.5 0.5 1 100 C6076
2SC5886 50 5 10 20 (Note 3) 400 1000 2 0.5 0.22 1.6 32 C5886
2SC5886A 50 5 10 20 (Note 3) 400 1000 2 0.5 0.22 1.6 32 C5886A
2SC3076 50 2 3 10 (Note 3) 70 240 2 0.5 0.5 1 50 C3076
2SC6052 20 5 7 10 (Note 3) 180 390 2 0.5 0.2 1.6 53 C6052
2SC3074 50 5 8 20 (Note 3) 70 240 1 1 0.4 3 150 C3074
S3H32 50 5 7 20 (Note 3) 200 500 2 0.5 0.2 1.6 53
2SC3303 80 5 8 20 (Note 3) 70 240 1 1 0.4 3 150 C3303
2SC6000
NPN single
50 7 10 20 (Note 3) 250 400 2 2.5 0.18 2.5 83 C6000
PW-Mold
SC-63
TPCP8501 100 2 4 1300 3300 100 300 2 0.3 0.2 1 33 8501
TPCP8507 120 1 2 1250 3000 120 300 2 0.1 0.14 0.3 10 8507
TPCP8510 * 120 1 2 1100 2250 120 300 2 0.1 0.14 0.3 10 8510
TPCP8511 * 50 3 5 1250 3000 250 400 2 0.3 0.18 1 33 8511
TPCP8505 50 3 5 1250 3000 400 1000 2 0.3 0.14 1 20 8505
TPCP8504
NPN single
10 2 3.5 1200 2800 400 1000 2 0.2 0.12 0.6 12 8504
TPCP8601 20 4 7 1300 3300 200 500 2 0.6 0.19 2 67 8601
TPCP8603 120 1 2 1250 3000 120 300 2 0.1 0.2 0.3 10 8603
TPCP8602 PNP single
50 2.5 4 1250 3000 200 500 2 0.3 0.2 1 33 8602
TPCP8701 NPN/dual 50 3 5 940 1770 400 1000 2 0.3 0.14 1 20 8701
TPCP8H01 (Note 2) 50 5 7 1000 2000 250 400 2 0.5 0.13 1.6 53 8H01
TPCP8H02 (Note 2) NPN
S-MOS 30 3 5 1000 2000 250 400 2 0.3 0.14 1 33 8H02
TPCP8F01 (Note 2) PNP
S-MOS 20 3 5 1000 200 500 2 0.5 0.19 1.6 53 8F01
TPCP8901 50 0.8/1.0 5 830 1480 200/400 500/1000 2 0.1 0.2/0.17 0.3 10/6 8901
TPCP8902
PNP NPN 30 2 8 890 1670 200 500 2 0.2 0.2/0.14 0.6 20 8902
TPCP8L01 (Note 4) NPN
Darlington
HED 120 0.9 2 900 2000 9000 2 1 1.5 1 1 8L01
TPCP8G01 (Note 5) * PNP Pch 20 3 5 940 1770 200 500 2 0.5 0.19 1.6 53 8G01
PS-8
Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area 645 mm2, glass-epoxy, t 1.6 mm). *: New product
Note 2: Buil t-in SBD, VRRM 30 V, IO 0.7 A, VF 0.4 V (MA X )@IF 0.5 A, IR 100 A (MAX)@VR 10 V : Being planned
Note 3: Tc 25°C
Note 4: Buil t-in HED , V RRM 200 V, IF(AV) 1 A
Note 5: Pch MOS VDSS 20 V, ID = 2 A, RON 130 m Max
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
59
2011/9 SCE0004L
(Power-Mold T r ansistors ( S C-63/64) ) Absolute Maximum Ratings (Ta 25°C)
VCEO IC PC PC Equivalent Product Remarks
Part Number Applications (V) (A) (W) (W)
Complementary
2SA1225 Power amplification for driver 160 1.5 1.0 15
2SA1241 50 2.0 1.0 10 2SC3076 2SA1892
2SC3076 Power amplificatio n 50 2.0 1.0 10 2SA1241 2SC5029
2SA1242 20 5.0 1.0 10 2SC3072 () 2SA1893
2SC3072 Strobe flash, power amplification 20 5.0 1.0 10 2SA1242 () 2SC3420
2SA1244 50 5.0 1.0 20 2SC3074 2SA1905
2SC3074 50 5.0 1.0 20 2SA1244 2SC5076
2SA2097 50 5.0 1.0 20 High
2SC5886 50 5.0 1.0 20 High
2SC5886A
High-current switching
50 5 1.0 20 High , VCBO 120 V
2SB905 150 1.5 1.0 10 2SD1220 2SA1408
2SD1220 TV vertical output, TV audio output (B) class 150 1.5 1.0 10 2SB905 2SC3621
2SB906 60 3.0 1.0 20 2SD1221 2SB834
2SD1221 60 3.0 1.0 20 2SB906 2SD880
TTB002 * 60 3.0 1.0 30
TTA003 *
Low-frequency power amplification
80 3.0 10
2SB907 40 3.0 1.0 15 Darlington type
2SC6076 Switching, power amplification 80 3 10
2SB908 80 4.0 1.0 15 2SD1223 Darlington type
2SD1223 Switching, power amplification 80 4.0 1.0 15 2SB908 Darlington type
2SC3303 Switching 80 5.0 1.0 20 2SC3258
2SA2034 400 2 1.0 15
2SA2184 550 1 10
2SA2142 600 0.5 15
2SC5458 400 0.8 1.0 10
2SC5548 370 2 1.0 15
2SC5548A 400 2 1.0 15
2SC6127 800 0.05 1.0 10
2SC3405 800 0.8 1.0 20
2SC6142 375 1.5 1.1
TTC003 * 400 1.5 1.1
TTC008 * 285 1.5 1.1
TTC012 *
Hi gh-volt age switchi ng
375 2 1.1
2SC6000 50 7 1.0 20
2SC6052 High-speed switching 20 5 1.0 10
: Tc 25°C *: New product
: hFE classifica ti on varies
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
60
2011/9 SCE0004L
(PW-Mini Transist ors (S C-62 ) )
Absolute Maximum Ratings Electrical Characteristics
Pc Pc Pc VCEO IC hFE VCE (sat) fT
Part N umb e r (W) (W) (W) (V) (A) VCE IC(V) ICIB(MHz) VCE IC
Marking Equivalent to
TO-92MOD
(TO-92)
NPN PNP (Note 1) (N ote 2) Min Max (V) (mA) Max (mA) (mA) Typ. (V) (mA) NPN PNP NPN PNP
Remarks/
Applications
2SC2881 2SA1201 0.5 1.0 120 0.8 80 240 5 100 1.0 500 50 120 5 100 C□ D
□ 2SC2235 2SA965 Audio driver
2SC2882 2SA1202 0.5 1.0 80 0.4 70 240 2 50 0.4 200 20 120/100 10 10 E□ F
□ (2SC1627) (2SA817) Low saturation
2SA1203 0.5 1.0 30 1.5 100 320 2 500 2.0 1500 30 120 2 500 G□ H
□ 2SC2236 2SA966 Audio driver
2SC2884 2SA1204 0.5 1.0 30 0.8 100 320 1 100 0.5/0.7 500 20 120 5 10 P□ R
□ (2SC2120) (2SA950) Low saturation
2SC3515 2SA1384 0.5 1.0 300 0.1 30 150 10 20 0.5 20 2 60 10 20 I□ J
□ (2SC2551) (2SA1091) Low saturation
2SA1483 0.5 1.0 45 0.2 40 240 1 10 0.3 100 10 200 10 10 V□ W
□ Low saturation
2SA1971 0.5 1.0 400 0.5 140 400 5100 1.0 100 10 35 550 AL 2SA1972 High-voltage
2SC5785 1 10 2 400 1000 2 200 0.12 600 12 3E Low saturation
2SA2066 1 10 2 200 500 2200 0.19 600 20 4E Low saturation
2SC5713 1 10 4 400 1000 2 500 0.15 1600 32 2C Low saturation
2SC5819 1 20 1.5 400 1000 2 150 0.12 500 10 3D Low saturation
2SA2069 1 20 1.5 200 500 2150 0.14 500 17 4D Low saturation
2SC6125 1 20 4 180 390 2 500 0.20 1600 53 4L High-speed switching
2SC5714 1 20 4 400 1000 2 500 0.15 1600 32 2E Low saturation
2SA2059 1 20 3 200 500 2500 0.19 1600 53 4F Low saturation
2SC6126 1 50 3 250 400 2 300 0.18 1000 33 4M High-speed switching
2SC5712 1 50 3 400 1000 2 300 0.14 1000 20 2A Low saturation
2SA2060 1 50 2 200 500 2300 0.20 1000 33 4G Low saturation
2SC5810 1 50 1 400 1000 2 100 0.17 300 6 3C Low saturation
2SA2070 1 50 1 200 500 2100 0.2 300 10 4C Low saturation
2SD2686 1 6010 1 2000 2 1000 1.5 1000 1 3H Darlington
2SC6124 2SA2206 1 80 2 100 200 2 500 0.5 1000 100 150/100 2 500 4J 4K Low saturation
TTC005 * 1.1 285 1 100 200 5 100 1.0 600 75 4N LED backlight
TTC013 * 1 350 0.5 100 200 5 50 0.3 160 20 4R LED backlight
Note: The hFE classification that appears instead of the □ shown in the Mark ing column will be one of the following: A, B, C, D, O, R or Y, according to the rank. *: New product
Note 1: The rating applies when the transistor is mounted on a ceramic board (250 mm2 x 0.8 mm).
Note 2: The rating applies when the transistor is mounted on a glass-epoxy board (645 mm2 x 1.6 mm).
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
(TSM Tr ansistors)
Part Number Absolute Maximum Ratings hFE VCE (sat) (V)
NPN VCEO (V) IC (A) ICP (A) Pc (mW)
(Note1) Pc (mW)
(Note 1) t 10s Min Max
VCE (V) IC (A) Max IC (A) IB (mA) Marking Remarks/
Applications
2SA2058 10 1.5 2.5 500 750 200 500 2 0.2 0.19 0.6 20 WM Low saturation
2SA2065 20 1.5 2.5 500 750 200 500 2 0.15 0.14 0.5 17 WK Low saturation
2SA2061 20 2.5 4 625 1000 200 500 2 0.5 0.19 1.6 53 WE Low saturation
TTA007 * 50 1 2 700 1100 200 500 2 0.1 0.2 0.3 10 WH Low saturation
2SA2056 50 2 3.5 625 1000 200 500 2 0.3 0.20 1.0 33 WF Low saturation
2SC5755 10 2 3.5 500 750 400 1000 2 0.2 0.12 0.6 12 WL Low saturation
2SC5784 20 1.5 2.5 500 750 400 1000 2 0.15 0.12 0.5 10 WJ Low saturation
2SC5738 20 3.5 6 625 1000 400 1000 2 0.5 0.15 1.6 32 WD Low saturation
2SC5976 30 3 5 625 1000 250 400 2 0.3 0.14 1.0 33 WW
Ultra-high-speed
switching
Low saturation
voltage
2SC5906 30 4 7 800 1250 200 500 2 0.5 0.2 1.6 53 WP
Ultra-high-speed
switching
Low saturation
voltage
2SC6062 30 5 10 800 1250 250 400 2 0.5 0.12 1.6 53 WR
Ultra-high-speed
switching
Ultra-low
saturation voltage
TTC007 * 50 1 2 700 1100 400 1000 2 0.1 0.12 0.3 6 WG Low saturation
2SC5692 50 2.5 4 625 1000 400 1000 2 0.3 0.14 1.0 20 WB Low saturation
2SC6033 50 2.5 5 625 1000 250 400 2 0.3 0.18 1.0 33 WX
Ultra-high-speed
switching
Low saturation
voltage
2SC5703 50 4 7 800 1250 400 1000 2 0.5 0.12 1.6 32 WA Low saturation
2SD2719 60 10 0.8 3 800 1250 2000 2 1.0 1.5 1 1 WV Darlington
2SC6061 120 1 2 625 1000 120 300 2 0.1 0.14 0.3 10 WN Low saturation
Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area 645 mm2, glass-epoxy, t 1.6 mm). *: New product
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
61
2011/9 SCE0004L
Radio-Frequency Bipolar Small-Signal Transistors
Radio- Frequency Bipolar Transistors Absolute Maximum Ratings (Ta 25°C)
VCEO IC PC Tj
Part Number Package Applications (V) (mA) (mW) (°C)
Marking TO-92
Equivalent
Product Remarks
2SC2714 FM-band radio-frequency amps 30 20 150 125 Q□ 2SC1923 fT 550 MHz
2SC5064 VHF/UHF-band low-noise amps 12 30 150 125 MA□ fT 7 GHz
2SC5084 VHF/UHF-band low-noise amps 12 80 150 125 MC□ fT 7 GHz
2SC5106
S-MINI
2.5
2.9
1.5
VHF/UHF-band oscillat ors 10 30 150 125 MF□ fT 6 GHz
2SC5087 VHF/UHF-band lo w -noise amps 12 80 150 125 C□ fT 7 GHz
2SC5087R VHF/UHF-band lo w -noise amps 12 80 150 125 ZP f
T 8 GHz
MT4S03A
SMQ
2.9
2.9
1.5
VHF/UHF-band low-voltage operation, low phase
noise 5 40 150 125 MR fT 10 GHz
2SC4215 FM-band radio-frequency amps 30 20 100 125 Q□ 2SC1923 fT 550 MHz
2SC5065 VHF/UHF-band low-noise amps 12 30 100 125 MA□ fT 7 GHz
2SC5085 VHF/UHF-band low-noise amps 12 80 100 125 MC□ fT 7 GHz
2SC5095 VHF/UHF-band low-noise amps 10 15 100 125 ME□ fT 10 GHz
2SC5107 VHF/UHF-band oscillators 10 30 100 125 MF□ fT 6 GHz
MT3S16U
USM
2.1
2.0
1.25
UHF-band low-voltage oscillators and amps 5 60 100 125 T4 fT 4 GHz
2SC5088 VHF/UHF-band low-noise amps 12 80 100 125 MC□ fT 7 GHz
MT4S23U * VHF/UHF-band low-noise amps 5 40 170 (Note 2) 150 MT fT 16 GHz
MT4S03BU
* VHF/UHF-band low-noise amps 5 40 175 (Note 2) 150 MR fT 12 GHz
MT4S24U *
USQ
2.1
2.0
1.25
VHF/UHF-band low-noise amps 5 50 175 (Note 2) 150 R8 fT 14.5 GHz
2SC4915 F M-band radio-frequency amps 30 20 100 125 Q□ 2SC1923 fT 550 MHz
2SC5066 VHF/UHF-band low-noise amps 12 30 100 125 M1/M2 fT 7 GHz
2SC5086 VHF/UHF-band low-noise amps 12 80 100 125 M5/M6 fT 7 GHz
2SC5096 VHF/UHF-band low-noise amps 10 15 100 125 M9/MA fT 10 GHz
2SC5108
SSM
1.6
1.6
0.8
VHF/UHF-band oscillators 10 30 100 125 MB/MC fT 6 GHz
MT3S11CT
CST3
0.6
1.0
VHF/UHF-band low-voltage operation, low noise 6 40 105 (Note 1) 125 08 fT 6 GHz
MT3S15TU * VHF/UHF-band low-noise amps, low-distortion amps 6 80 900 (Note 2) 150 T3 fT 11.5 GHz
MT3S19TU * VHF/UHF-band low-noise amps, low-distortion amps 6 80 900 (Note 2) 150 T6 fT 11 GHz
MT3S20TU *
UFM
2.1
2.0
1.7
VHF/UHF-band low-noise amps, low-distortion amps 12 80 900 (Note 2) 150 MU fT 7 GHz
MT3S19 *
S-MINI
2.5
2.9
1.5
VHF/UHF-band low-noise amps, low-distortion amps 6 80 800 (Note 2) 150 T6 fT 12 GHz
MT3S19R * VHF/UHF-band low-noise amps, low-distortion amps 6 80 320 (Note 1) 150 T6 fT 13.5 GHz
MT3S20R *
SOT-23F
2.4
2.9
1.8
VHF/UHF-band low-noise amps, low-distortion amps 12 80 320 (Note 1) 150 MU fT 7.5 GHz
MT3S20P * VHF/UHF-band low-noise amps, low-distortion amps 12 80 1800 (Note 2) 150 MU fT 7 GHz
MT3S21P * VHF/UHF-band low-noise amps, low-distortion amps 6 80 1800 (Note 2) 150 T2 fT 9 GHz
MT3S22P *
Pw-Mini
4.2
4.6
2.5
VHF/UHF-band low-noise amps, low-distortion amps 6 80 1800 (Note 2) 150 T5 fT 8. 5 GHz
□: Denotes a hFE class. *: New product
Note 1: When mounted on a glass-epoxy PCB board
Note 2: Mounted on a ceramic board
The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
62
2011/9 SCE0004L
SiGe HBT Absolute Maximum Ratings (Ta 25° C)
VCEO IC PC Tj
Part Number Package Applications (V) (mA) (mW) (°C)
Marking Remarks
MT4S102U UHF/SHF-band low-noise amps 3 20 60 150 P8 fT 24 GHz
MT4S300U * UHF/SHF-band low-noise amps 4 50 100 150 P3 fT 26.5 GHz, high ESD immunity
MT4S301U *
USQ
2.1
2.0
1.25
UHF/SHF-band low-noise amps 4 35 100 150 P4 fT 27.5 GHz, high ESD immunity
MT4S102T UHF/SHF-band low-noise amps 3 20 60 150 P8 fT 25 GHz
MT4S300T * UHF/SHF-band low-noise amps 4 50 100 150 P3 fT 26.5 GHz, high ESD immunity
MT4S301T *
TESQ
1.2
1.2
0.9
UHF/SHF-band low-noise amps 4 35 100 150 P4 fT 27.5 GHz, high ESD immunity
MT3S111 * VHF/UHF-band low-voltage operation, low-noise amps 6 100 700 (Note 2) 150 R5 fT 11.5 GHz
MT3S113 *
S-MINI
2.5
2.9
1.5
VHF/UHF-band low-voltage operation, low-noise amps 5.3 100 800 (Note 2) 150 R7 fT 12.5 GHz
MT3S111TU * 6 100 800 (Note 2) 150 R5 fT 10 GHz
MT3S113TU *
UFM
2.1
2.0
1.7
VHF/UHF-band low-voltage operation, low-noise amps
5.3 100 900 (Note 2) 150 R7 fT 11.2 GHz
MT3S111P * 6 100 1000 (Note 2) 150 R5 fT 8 GHz
MT3S113P *
Pw-Mini
4.2
4.6
2.5
VHF/UHF-band low-voltage operation, low-noise amps
5.3 100 1600 (Note 2) 150 R7 fT 7.7 GHz
Note 2: Mounted on a ceramic board *: New product
The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
63
2011/9 SCE0004L
Radio-Frequency Small-Signal FETs
Radio-Frequency MOSFETs Electrical Characteristics (Ta 25°C)
Part Number Package Applications VDS
(V) ID
(mA) PD
(mW) IDSS
(mA) |Yfs|
(mS) Typ. Marking Equivalent
Product
(Leaded Type)
3SK291 UHF-band radio-frequency amps 12.5 30 150 0 to 0.1 26 UF
3SK292
SMQ
2.9
2.9
1.5
VHF/UHF-band radio-frequency amps 12.5 30 150 0 to 0.1 23.5 UV
3SK293 UHF-band radio-frequency amps 12.5 30 100 0 to 0.1 26 UF
3SK294
USQ
2.1
2.0
1.25
VHF/UHF-band radio-frequency amps 12.5 30 100 0 to 0.1 23.5 UV
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
64
2011/9 SCE0004L
Radio-Frequency Power MOSFETs
Radio-Frequency Power MOSFETs Absolute Maximum Ratings (Tc 25°C) Po (W)
Test Conditions
Part Number Package Applications VDSS
(V) PD
(W) ID
(A) Min VDD
(V) f
(MHz) Pi
(W)
RFM08U9X PW-X 36 20 5 7.5 9.6 520 0.5
2SK3075 PW-X 30 20 5 7.5 9.6 520 0.5
2SK3074 PW-MINI 30 3 1 0.63 9.6 520 0.02
RFM12U7X PW-X 20 20 4 11.5 7.2 520 1.0
RFM01U7P * PW-MINI 20 3 1 1.0 7.2 520 0.1
2SK3476 PW-X 20 20 3 7.0 7.2 520 0.5
2SK3475 PW-MINI
UHF/VHF
Professional radios
20 3 1 0.63 7.2 520 0.02
RFM04U6P * PW-MINI 16 7 2 3.5 6.0 470 0.2
2SK4037 PW-X GMRS 12 20 3 3.55 6.0 470 0.3
2SK2854 PW-MINI UHF/VHF
Professional radios 10 0.5 0.5 0.2 6.0 849 0.02
2SK3079A PW-X 10 20 3 2.24 4.5 470 0.1
2SK3756 PW-MINI 7.5 3 1 1.26 4.5 470 0.1
2SK3078A PW-MINI FRS/GMRS 10 3 0.5 0.63 4.5 470 0.1
2SK3077 USQ Driver 10 0.25 0.1 0.032 4.8 915 0.001
RFM03U3CT * RF-CST3 GMRS 16 7 2.5 2.3 3.6 520 0.1
RFM00U7U USQ Driver 20 0.25 0.1 0.1 7.2 520 0.01
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product
65
2011/9 SCE0004L
IGBTs
IGBTs (Discrete IGB T s) Absolute Maximum Ratings
(Ta 25°C )
Ic Pc Package VCE(sat) Typ.
@Ta 25°C
tf Typ.
@Ta 25°C
Part Number Applications Fe ature s VCES
(V) DC
(A) Pulsed
(A)
Ta =
25°C
(W)
Tc =
25°C
(W) Type
Circuit
Configuration
(Note)
(V) Ic
(A) VGE
(V)
(s) Test
Conditions
Remarks
GT30J121 30 60 170 TO-3P(N) Through-hole (1) 2.0 30 15 0.05
GT30J126 30 60 90 TO-3P(N)IS Isolation,
Through-hole (1) 1.95 30 15 0.05
GT30J324 30 60 170 TO-3P(N) Through-hole (2) 2.0 30 15 0.05
GT50J121 50 100 240 TO-3P(LH) Through-hole (1) 2.0 50 15 0.05
GT50J325
Power supplies
(and UPS/PFC/Motor) High-speed
switching 600
50 100 240 TO-3P(LH) Through-hole (2) 2.0 50 15 0.05
GT10Q101 10 20 140 TO-3P(N) Through-hole (1) 2.1 10 15 0.16
GT10Q301 10 20 140 TO-3P(N) Through-hole (2) 2.1 10 15 0.16
GT15Q102 15 30 170 TO-3P(N) Through-hole (1) 2.1 15 15 0.16
GT15Q301 15 30 170 TO-3P(N) Through-hole (2) 2.1 15 15 0.16
GT25Q102 25 50 200 TO-3P(LH) Through-hole (1) 2.1 25 15 0.16
GT25Q301
High
ruggedness 1200
25 50 200 TO-3P(LH) Through-hole (2) 2.1 25 15 0.16
GT10J301 10 20 90 TO-3P(N) Through-hole (2) 2.1 10 15 0.15
GT20J101 20 40 130 TO-3P(N) Through-hole (1) 2.1 20 15 0.15
GT20J301 20 40 130 TO-3P(N) Through-hole (2) 2.1 20 15 0.15
GT30J101 30 60 155 TO-3P(N) Through-hole (1) 2.1 30 15 0.15
GT30J301 30 60 155 TO-3P(N) Through-hole (2) 2.1 30 15 0.15
GT50J102
Motor drives
(and UPS/PFC)
High
ruggedness
50 100 200 TO-3P(LH) Through-hole (1) 2.1 50 15 0.15
Inductive
load
GT30J122 30 100 75 TO-3P(N)IS Isolation,
Through-hole (1) 2.1 50 15 0.25
GT30J122A 30 100 120 TO-3P(N) Through-hole (1) 1.7 50 15 0.2
GT40J121 *
Power factor
correction
Low
frequency
switching 40 100 80 TO-3P(N)IS Isolation,
Through-hole (1) 1.45 40 15 0.2
Partial switching
converter
GT30J322 30 100 75 TO-3P(N)IS Isolation,
Through-hole (2) 2.1 50 15 0.25
GT35J321 37 100 75 TO-3P(N)IS Isolation,
Through-hole (2) 1.9 50 15 0.19
GT40J321 40 100 120 TO-3P(N) Through-hole (2) 2.0 40 15 0.11 Fast switching
GT40J322 40 100 120 TO-3P(N) Through-hole (2) 1.7 40 15 0.20
GT40J323 40 100 170 TO-3P(N) Through-hole (2) 2.0 40 15 0.06 Fast switching
GT40J325 * 40 100 80 TO-3P(N)IS Isolation,
Through-hole (2) 1.45 40 15 0.2 6th generation
GT50J322 50 100 130 TO-3P(LH) Through-hole (2) 2.1 50 15 0.25
GT50J322H 50 100 130 TO-3P(LH) Through-hole (2) 2.2 50 15 0.11 Fast switching
GT50J327 50 100 140 TO-3P(N) Through-hole (2) 1.9 50 15 0.19
GT50J341 * 50 100 200 TO-3P(N) Through-hole (2) 1.6 50 15 0.15 6th generation,
Tj 175°C
GT50J328 50 120 140 TO-3P(N) Through-hole (2) 2.0 50 15 0.1 Fast switching
GT60J321 60 120 200 TO-3P(LH) Through-hole (2) 1.55 60 15 0.30 Low VCE ( s at)
GT60J323 60 120 170 TO-3P(LH) Through-hole (2) 1.9 60 15 0.16
GT60J323H
IH rice cookers,
IH cooktops,
Microwave ove ns,
Induction heating
equipment
AC 200 V
Current
resonance
600
60 120 170 TO-3P(LH) Through-hole (2) 2.1 60 15 0.12
Resistive
load
Fast switching
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product
(1) Typical
Collector
Emitter
Gate
Note)
(2) Built-in FRD
Collector
Emitter
Gate
(3) Built-in Zener diode
Collector
Emitter
Gate
66
2011/9 SCE0004L
IGBTs (Discrete IGB T s) (Continued) Absolute Maximum Ratings (Ta 25°C)
Ic Pc Package VCE(sat) Typ.
@Ta 25°C tf Typ.
@Ta 25°C
Part Number Applications Features VCES
(V) DC
(A) Pulsed
(A)
Ta =
25°C
(W)
Tc =
25°C
(W) Type
Circuit
Configuration
(Note)
(V) Ic
(A) VGE
(V)
(s) Test
Conditions
Remarks
GT15M321 15 30 55 TO-3P(N)IS Isolation,
Through-hole (2) 1.8 15 15 0.20 For small power
GT35MR21 * 35 100 82 TO-3P(N)IS Isolation,
Through-hole (2) 1.6 35 15 0.20 6.5th generation
GT50M322 50 120 156 TO-3P(N) Through-hole (2) 2.1 60 15 0.25
GT50MR21 * 50 100 230 TO-3P(N) Through-hole (2) 1.7 50 15 0.18 6.5th generation,
Tj 175°C
GT60M324
900
60 120 254 TO-3P(N) Through-hole (2) 1.7 60 15 0.11 6th generation,
Tj 175°C
GT50N322A 50 120 156 TO-3P(N) Through-hole (2) 2.2 60 15 0.1 Fast switching
GT50N324 50 120 150 TO-3P(N) Through-hole (2) 1.9 60 15 0.11 6th generation
GT60N321 1000 60 120 170 TO-3P(LH) Through-hole (2) 2.3 60 15 0.25
GT50NR21 *
IH rice coo kers,
IH cooktops,
Microwave ovens,
Induction heating
equipment AC100 V
1050 50 100 230 TO-3P(N) Through-hole (2) 1.8 50 15 0.2 6.5th generation
Tj 175°C
GT40QR21 * 1200 40 80 230 TO-3P(N) Through-hole (2) 1.9 40 15 0.2 6.5th generation,
Tj 175°C
GT40T321 *
IH rice coo kers,
IH cooktops,
Microwave ovens,
Induction heating
equipment AC200 V
Voltage
resonance
1500 40 80 230 TO-3P(N) Through-hole (2) 2.15 40 15 0.24 6th generation,
Tj 175°C
GT5G133 * 130 0.83 TSON-8 SMD (3) 3.0 130 2.5 1.5 ICP 130 A
@VGE 2. 5V
gate drive
GT8G151 *
Digital still cameras,
cell phone
150 0.83 TSON-8 SMD (3) 2.65 150 2.5 1.5 ICP 150 A
@VGE 2. 5V
gate drive
GT8G132 150 1.1 SOP-8 SMD (3) 2.3 150 4.0 1.6 ICP 150 A
@VGE 2. 5V
gate drive
GT10G131
Digital still cameras,
single lens reflex
cameras
Strobe flash
(dimming
control) 400
200 1.9 SOP-8 SMD (3) 2.3 200 4.0 1.8 ICP 200 A
@VGE 4. 0V
gate drive
GT30F124 300 200 25 TO-220SIS Isolation,
Through-hole (1) 2.3 120 15 0.15 6th generation
GT45F127 300 200 26 TO-220SIS Isolation,
Through-hole (1) 1.6 120 15 0.27 6th generation
GT30F125 * 330 200 25 TO-220SIS Isolation,
Through-hole (1) 1.9 120 15 0.15 6th generation
GT45F128 * 330 200 26 TO-220SIS Isolation,
Through-hole (1) 1.45 120 15 0.27 6th generation
GT30F131 * 360 200 140 TO-220SM
(MXN) SMD (1) 1.9 120 15 0.17 6th generation
GT30G124 200 25 TO-220SIS Isolation,
Through-hole (1) 2.5 120 15 0.23 6th generation
GT30G125 * 200 25 TO-220SIS Isolation,
Through-hole (1) 2.1 120 15 0.16 6th generation
GT45G127 200 26 TO-220SIS Isolation,
Through-hole (1) 1.7 120 15 0.37 6th generation
GT45G128 *
430
200 26 TO-220SIS Isolation,
Through-hole (1) 1.55 120 15 0.41 6th generation
GT30J124
PDP-TV
PDP
sustain,
energy
recovery
and
separation
circuits
600 200 26 TO-220SIS Isolation,
Through-hole (1) 2.4 120 15 0.25
Resistive
load
5th generation
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product
(1) Typical
Collector
Emitte
Gate
Note)
(2) Built-in FRD
Collector
Emitte
Gate
(3) Built-in Zener diode
Collector
Emitte
Gate
67
2011/9 SCE0004L
Phototransistors Electrical/Optical Characteristics (Ta 25°C)
Light Current Da rk Current
Part Number Part Number
with Rank Package Min
(A) Max
(A) E (mW/cm2)Max
(A) VCE (V)
Peak
Sensitive
Wavelength
(nm)
Half-Value
Angle
( ° )
Impermeable
to Visible Light Applications
100
TPS601A(A,F) 100 300
TPS601A(B,F) 200 600
TPS601A(F)
TPS601A(C,F)
TO-18CAN with lens
400 1200
0.1 0.2 30 800 10
TPS610(F) 5 100 0.1 0.1 24 800 8
TPS611(F) 5 30 0.1 0.1 24 900 8 ●
20 150
TPS615(B,F) 34 85
TPS615(C,F) 60 150
TPS615(F)
TPS615(BC,F)
3
34 150
0.1 0.1 24 800 30
10 75
TPS616(B,F) 17 42.5
TPS616(C,F) 30 75
TPS616(F)
TPS616(BC,F)
3
17 75
0.1 0.1 24 900 30 ●
27
TPS622(A,F) 27 80
TPS622(F)
TPS622(B,F)
Small side-view package
55 165
0.1 0.1 24 870 15 ●
Optoelectronic
switches
Note: E radiant incidence; VCE coll ector-emi tter v oltage
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
68
2011/9 SCE0004L
Website: http://www.semicon.toshiba.co.jp/eng
Semiconductor & Storage Products Company
2011
OVERSEAS SUBSIDIARIES AND AFFILIATES
Toshiba America
Electronic Components, Inc.
s )RVINE(EADQUARTERS
4EL&AX
s "UFFALO'ROVE#HICAGO
4EL&AX
s $ULUTH!TLANTA
4EL&AX
s %L0ASO
4EL
s -ARLBOROUGH
4EL&AX
s 0ARSIPPANY
4EL&AX
s 3AN*OSE
4EL&AX
s 7IXOM$ETROIT
4EL&AX
s "LOOMINGTON
4EL&AX
s 3AN$IEGO
4EL&AX
Toshiba Electronics do Brasil Ltda.
4EL&AX
Toshiba Electronics Europe GmbH
s $àSSELDORF(EAD/FFICE
4EL&AX
s &RANCE"RANCH
4EL
s )TALY"RANCH
4EL&AX
s 3PAIN"RANCH
4EL&AX
s 5+"RANCH
4EL&AX
s 3WEDEN"RANCH
4EL&AX
Toshiba Electronics Asia (Singapore) Pte. Ltd.
4EL&AX
Toshiba Electronics Service (Thailand) Co., Ltd.
4EL&AX
Toshiba Electronics Trading (Malaysia) Sdn. Bhd.
s +UALA,UMPUR(EAD/FFICE
4EL&AX
s 0ENANG/FFICE
4EL&AX
Toshiba India Private Ltd.
4EL&AX
Toshiba Electronics Asia, Ltd.
s (ONG+ONG(EAD/FFICE
4EL&AX
s "EIJING/FFICE
4EL&AX
s #HENGDU/FFICE
4EL&AX
s 1INGDAO/FFICE
4EL&AX
Toshiba Electronics (Shenzhen) Co.,Ltd
4EL&AX
Toshiba Electronics (Shanghai) Co., Ltd.
s 3HANGHAI058)"RANCH
4EL&AX
s (ANGZHOU/FFICE
4EL&AX
s .ANJING/FFICE
4EL&AX
Toshiba Electronics (Dalian) Co., Ltd.
4EL&AX
Tsurong Xiamen Xiangyu Trading Co., Ltd.
4EL&AX
Toshiba Electronics Korea Corporation
s 3EOUL(EAD/FFICE
4EL&AX
s $AEGU/FFICE
4EL&AX
Toshiba Electronics Taiwan Corporation
s 4AIPEI(EAD/FFICE
4EL&AX
!SOF!PRIL
4OSHIBA#ORPORATIONAND ITS SUBSIDIARIES AND AFFILIATES COLLECTIVELY h4/3()"!v RESERVETHE RIGHT TO MAKE CHANGES TO THEINFORMATION IN THIS DOCUMENT AND RELATED HARDWARE
SOFTWAREANDSYSTEMSCOLLECTIVELYh0RODUCTvWITHOUTNOTICE
4HIS DOCUMENT AND ANY INFORMATION HEREIN MAY NOT BE REPRODUCED WITHOUT PRIOR WRITTEN PERMISSION FROM 4/3()"! %VEN WITH 4/3()"!S WRITTEN PERMISSION REPRODUCTION IS
PERMISSIBLEONLYIFREPRODUCTIONISWITHOUTALTERATIONOMISSION
4HOUGH4/3()"!WORKSCONTINUALLYTOIMPROVE0RODUCTgSQUALITYANDRELIABILITY0RODUCTCANMALFUNCTIONORFAIL#USTOMERSARERESPONSIBLEFORCOMPLYINGWITHSAFETYSTANDARDSAND
FORPROVIDINGADEQUATEDESIGNSANDSAFEGUARDSFORTHEIRHARDWARESOFTWAREANDSYSTEMSWHICHMINIMIZERISKANDAVOIDSITUATIONSINWHICHAMALFUNCTIONORFAILUREOF0RODUCTCOULD
CAUSE LOSS OF HUMAN LIFE BODILY INJURY OR DAMAGE TO PROPERTY INCLUDING DATA LOSS OR CORRUPTION "EFORE CUSTOMERS USE THE 0RODUCT CREATE DESIGNS INCLUDING THE 0RODUCT OR
INCORPORATETHE 0RODUCT INTO THEIR OWNAPPLICATIONS CUSTOMERS MUST ALSOREFER TO AND COMPLY WITHA THE LATEST VERSIONSOF ALL RELEVANT 4/3()"!INFORMATION INCLUDING WITHOUT
LIMITATION THIS DOCUMENT THE SPECIFICATIONS THE DATA SHEETS AND APPLICATION NOTES FOR 0RODUCT AND THE PRECAUTIONS AND CONDITIONS SET FORTH IN THE 4/3()"! 3EMICONDUCTOR
2ELIABILITY(ANDBOOKANDBTHEINSTRUCTIONSFORTHEAPPLICATIONWITHWHICHTHE0RODUCTWILLBEUSEDWITHORFOR#USTOMERSARESOLELYRESPONSIBLEFORALLASPECTSOFTHEIROWNPRODUCT
DESIGNORAPPLICATIONSINCLUDINGBUTNOTLIMITEDTOADETERMININGTHEAPPROPRIATENESSOFTHEUSEOFTHIS0RODUCTINSUCHDESIGNORAPPLICATIONSBEVALUATINGANDDETERMININGTHE
APPLICABILITYOFANY INFORMATIONCONTAINEDINTHISDOCUMENTORINCHARTSDIAGRAMSPROGRAMSALGORITHMSSAMPLEAPPLICATION CIRCUITSORANYOTHERREFERENCEDDOCUMENTSANDC
VALIDATINGALLOPERATINGPARAMETERSFORSUCHDESIGNSANDAPPLICATIONSTOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
0RODUCTISINTENDEDFORUSEINGENERALELECTRONICSAPPLICATIONSEGCOMPUTERSPERSONALEQUIPMENTOFFICEEQUIPMENTMEASURINGEQUIPMENTINDUSTRIALROBOTSANDHOMEELECTRONICS
APPLIANCESORFORSPECIFICAPPLICATIONSASEXPRESSLYSTATEDINTHISDOCUMENT0RODUCTISNEITHERINTENDEDNORWARRANTEDFORUSEINEQUIPMENTORSYSTEMSTHATREQUIREEXTRAORDINARILY
HIGH LEVELS OF QUALITY ANDOR RELIABILITY ANDOR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE BODILY INJURY SERIOUS PROPERTY DAMAGE OR SERIOUS PUBLIC IMPACT
h5NINTENDED5SEv 5NINTENDED 5SE INCLUDES WITHOUTLIMITATIONEQUIPMENTUSEDINNUCLEAR FACILITIES EQUIPMENT USED INTHEAEROSPACEINDUSTRYMEDICALEQUIPMENT EQUIPMENT
USED FOR AUTOMOBILES TRAINS SHIPS AND OTHER TRANSPORTATION TRAFFIC SIGNALING EQUIPMENT EQUIPMENT USED TO CONTROL COMBUSTIONS OR EXPLOSIONS SAFETY DEVICES ELEVATORS AND
ESCALATORSDEVICESRELATEDTOELECTRICPOWERANDEQUIPMENTUSEDINFINANCERELATEDFIELDS$ONOTUSE0RODUCTFOR5NINTENDED5SEUNLESSSPECIFICALLYPERMITTEDINTHISDOCUMENT
$ONOTDISASSEMBLEANALYZEREVERSEENGINEERALTERMODIFYTRANSLATEORCOPY0RODUCTWHETHERINWHOLEORINPART
0RODUCTSHALLNOTBEUSEDFORORINCORPORATEDINTOANYPRODUCTSORSYSTEMSWHOSEMANUFACTUREUSEORSALEISPROHIBITEDUNDERANYAPPLICABLELAWSORREGULATIONS
4HEINFORMATIONCONTAINEDHEREINISPRESENTEDONLYASGUIDANCEFOR0RODUCTUSE.ORESPONSIBILITYISASSUMEDBY4/3()"!FORANYINFRINGEMENTOFPATENTSORANYOTHERINTELLECTUAL
PROPERTYRIGHTS OFTHIRDPARTIES THATMAYRESULT FROMTHEUSEOF 0RODUCT.OLICENSE TOANYINTELLECTUAL PROPERTYRIGHTISGRANTEDBYTHISDOCUMENT WHETHEREXPRESSOR IMPLIEDBY
ESTOPPELOROTHERWISE
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM
EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR
INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA,
AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING
WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
0RODUCTMAYINCLUDEPRODUCTSUSING'A!S'ALLIUM!RSENIDE'A!SISHARMFULTOHUMANSIFCONSUMEDORABSORBEDWHETHERINTHEFORMOFDUSTORVAPOR(ANDLEWITHCAREANDDO
NOTBREAKCUTCRUSHGRINDDISSOLVECHEMICALLYOROTHERWISEEXPOSE'A!SIN0RODUCT
$O NOT USE OR OTHERWISE MAKE AVAILABLE 0RODUCT OR RELATED SOFTWARE OR TECHNOLOGY FOR ANY MILITARY PURPOSES INCLUDING WITHOUT LIMITATION FOR THE DESIGN DEVELOPMENT USE
STOCKPILINGORMANUFACTURINGOFNUCLEARCHEMICALORBIOLOGICALWEAPONSORMISSILETECHNOLOGYPRODUCTSMASSDESTRUCTIONWEAPONS0RODUCTANDRELATEDSOFTWAREANDTECHNOLOGY
MAY BE CONTROLLED UNDER THE *APANESE &OREIGN %XCHANGE AND &OREIGN 4RADE ,AW AND THE 53 %XPORT !DMINISTRATION 2EGULATIONS %XPORT AND REEXPORT OF 0RODUCT OR RELATED
SOFTWAREORTECHNOLOGYARESTRICTLYPROHIBITEDEXCEPTINCOMPLIANCEWITHALLAPPLICABLEEXPORTLAWSANDREGULATIONS
0RODUCTMAYINCLUDEPRODUCTSSUBJECTTOFOREIGNEXCHANGEANDFOREIGNTRADECONTROLLAWS
0LEASECONTACTYOUR4/3()"!SALESREPRESENTATIVEFORDETAILSASTOENVIRONMENTALMATTERSSUCHASTHE2O(3COMPATIBILITYOF0RODUCT0LEASEUSE0RODUCTINCOMPLIANCEWITHALL
APPLICABLELAWSANDREGULATIONSTHATREGULATETHEINCLUSIONORUSEOFCONTROLLEDSUBSTANCESINCLUDINGWITHOUTLIMITATIONTHE%52O(3$IRECTIVE4/3()"!ASSUMESNOLIABILITYFOR
DAMAGESORLOSSESOCCURRINGASARESULTOFNONCOMPLIANCEWITHAPPLICABLELAWSANDREGULATIONS
)NADDITIONTOTHEABOVETHEFOLLOWINGAREAPPLICABLEONLYTODEVELOPMENTTOOLS
4HOUGH4/3()"!WORKSCONTINUALLYTOIMPROVE0RODUCTSQUALITYANDRELIABILITY0RODUCTCANMALFUNCTIONORFAIL5SETHE0RODUCTINAWAYWHICHMINIMIZESRISKANDAVOIDSITUATIONS
INWHICHAMALFUNCTIONORFAILUREOF0RODUCTCOULDCAUSELOSSOFHUMANLIFEBODILYINJURYORDAMAGETOPROPERTYINCLUDINGDATALOSSORCORRUPTION&ORUSINGTHE0RODUCTCUSTOMERS
MUSTALSOREFERTOANDCOMPLYWITHTHELATESTVERSIONSOFALLRELEVANT4/3()"!INFORMATIONINCLUDINGWITHOUTLIMITATIONTHISDOCUMENTTHEINSTRUCTIONMANUALTHESPECIFICATIONSTHE
DATASHEETSFOR0RODUCT
0RODUCTISPROVIDEDSOLELYFORTHEPURPOSEOFPERFORMINGTHEFUNCTIONALEVALUATIONOFASEMICONDUCTORPRODUCT0LEASEDONOTUSE0RODUCTFORANYOTHERPURPOSEINCLUDINGWITHOUT
LIMITATIONEVALUATIONINHIGHORLOWTEMPERATUREORHUMIDITYANDVERIFICATIONOFRELIABILITY
$ONOTINCORPORATE0RODUCTINTOYOURPRODUCTSORSYSTEM0RODUCTSAREFORYOUROWNUSEANDNOTFORSALELEASEOROTHERTRANSFER
69
2011/9 SCE0004L
