VS-HFA08TB60SPbF www.vishay.com Vishay Semiconductors HEXFRED(R) Ultrafast Soft Recovery Diode, 8 A FEATURES * Ultrafast and ultrasoft recovery * Very low IRRM and Qrr * Specified at operating conditions * AEC-Q101 qualified * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-263AB (D2PAK) BENEFITS Base cathode 2 * Reduced RFI and EMI * Reduced power loss in diode and switching transistor * Higher frequency operation * Reduced snubbing 1 N/C 3 Anode * Reduced parts count DESCRIPTION VS-HFA08TB60S is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 8 A continuous current, the VS-HFA08TB60S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED(R) product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA08TB60S is ideally suited for applications in power supplies (PFC boost diode) and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. PRODUCT SUMMARY Package TO-263AB (D2PAK) IF(AV) 8A VR 600 V VF at IF 1.4 V trr (typ.) 18 ns TJ max. 150 C Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current SYMBOL TEST CONDITIONS VR IF TC = 100 C VALUES UNITS 600 V 8 Single pulse forward current IFSM 60 Maximum repetitive forward current IFRM 24 Maximum power dissipation Operating junction and storage temperature range PD TJ, TStg TC = 25 C 36 TC = 100 C 14 -55 to +150 A W C Revision: 26-Jun-15 Document Number: 94048 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA08TB60SPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 A IF = 8.0 A Maximum forward voltage VFM IF = 16 A See fig. 1 IF = 8.0 A, TJ = 125 C Maximum reverse leakage current IRM VR = VR rated TJ = 125 C, VR = 0.8 x VR rated See fig. 2 Junction capacitance CT VR = 200 V See fig. 3 Series inductance LS Measured lead to lead 5 mm from package body MIN. TYP. MAX. 600 - - - 1.4 1.7 - 1.7 2.1 - 1.4 1.7 UNITS V - 0.3 5.0 - 100 500 - 10 25 pF - 8.0 - nH UNITS A DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5, 6 Peak recovery current Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during tb See fig. 8 SYMBOL MIN. TYP. MAX. trr IF = 1.0 A, dIF/dt = 200 A/s, VR = 30 V TEST CONDITIONS - 18 - trr1 TJ = 25 C - 37 55 ns trr2 TJ = 125 C - 55 90 IRRM1 TJ = 25 C - 3.5 5.0 IRRM2 TJ = 125 C - 4.5 8.0 Qrr1 TJ = 25 C - 65 138 Qrr2 TJ = 125 C - 124 360 dI(rec)M/dt1 TJ = 25 C - 240 - dI(rec)M/dt2 TJ = 125 C - 210 - MIN. TYP. MAX. UNITS - - 300 C - - 3.5 - - 80 - 2.0 - g - 0.07 - oz. IF = 8.0 A dIF/dt = 200 A/s VR = 200 V A nC A/s THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s K/W Typical socket mount Weight Marking device Case style TO-263AB (D2PAK) HFA08TB60S Revision: 26-Jun-15 Document Number: 94048 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA08TB60SPbF Vishay Semiconductors 1000 100 TJ = 150 C 10 TJ = 150 C TJ = 125 C TJ = 25 C 1 0.1 0.4 100 IR - Reverse Current (A) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 125 C 10 1 0.1 TJ = 25 C 0.01 0.001 0.8 1.2 1.6 2.0 2.4 2.8 100 0 3.2 300 200 400 500 600 VR - Reverse Voltage (V) VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Fig. 2 - Typical Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 TJ = 25 C 10 1 1 10 100 1000 VR - Reverse Voltage (V) Fig. 1 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Response 10 1 PDM Single pulse (thermal response) 0.01 0.00001 t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 0.0001 0.001 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 2 - Maximum Thermal Impedance ZthJC Characteristics Revision: 26-Jun-15 Document Number: 94048 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA08TB60SPbF www.vishay.com Vishay Semiconductors 80 500 IF = 16 A IF = 8 A IF = 4 A 400 Qrr (nC) trr (ns) 60 40 20 300 200 IF = 16 A IF = 8 A IF = 4 A 100 VR = 200 V TJ = 125 C TJ = 25 C 0 100 0 100 1000 1000 dIF/dt (A/s) dIF/dt (A/s) Fig. 3 - Typical Reverse Recovery Time vs. dIF/dt Fig. 5 - Typical Stored Charge vs. dIF/dt 20 10 000 VR = 200 V TJ = 125 C TJ = 25 C dI(rec)M/dt (A/s) 15 Irr (A) VR = 200 V TJ = 125 C TJ = 25 C IF = 16 A IF = 8 A IF = 4 A 10 IF = 16 A IF = 8 A IF = 4 A 1000 5 VR = 200 V TJ = 125 C TJ = 25 C 0 100 1000 100 100 1000 dIF/dt (A/s) dIF/dt (A/s) Fig. 4 - Typical Recovery Current vs. dIF/dt Fig. 6 - Typical dI(rec)M/dt vs. dIF/dt Revision: 26-Jun-15 Document Number: 94048 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA08TB60SPbF www.vishay.com Vishay Semiconductors VR = 200 V 0.01 L = 70 H D.U.T. dIF/dt adjust D IRFP250 G S Fig. 7 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 3 - Reverse Recovery Waveform and Definitions Revision: 26-Jun-15 Document Number: 94048 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA08TB60SPbF www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- HF A 08 TB 60 S 1 2 3 4 5 6 7 TRL PbF 8 1 - Vishay Semiconductors product 2 - HEXFRED(R) family 3 - Process designator: A = electron irradiated 4 - Current rating (08 = 8 A) 5 - Package outline (TB = TO-220, 2 leads) 6 - Voltage rating (60 = 600 V) 7 - S = D2PAK 8 - 9 - * None = Tube * TRL = tape and reel (left oriented) * TRR = tape and reel (right oriented) * PbF = lead (Pb)-free * P = lead (Pb)-free (for D2PAK TRR and TRL) 9 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95054 Packaging information www.vishay.com/doc?95032 ORDERING INFORMATION (Example) PREFERRED P/N VS-HFA08TB60SPBF QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 50 1000 Antistatic plastic tube VS-HFA08TB60STRRP 800 800 13" diameter reel VS-HFA08TB60STRLP 800 800 13" diameter reel Revision: 26-Jun-15 Document Number: 94048 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC(R) outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb 0.004 M B 0.010 M A M B Plating Base Metal (4) b1, b3 H 2x e Gauge plane c1 (4) (c) B 0 to 8 Seating plane L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail "A" Rotated 90 CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 4 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC(R) outline TO-263AB Revision: 08-Jul-15 Document Number: 95046 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-HFA08TB60SPBF VS-HFA08TB60STRLP HFA08TB60S HFA08TB60STRL HFA08TB60STRR VSHFA08TB60STRRP