SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A Z % RT ... Replacement Type; consult manufacturer. Indicators of separate manufacturers producing same type number (non-JEDEC) whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D.A.1.A.) is an integral part of the type number {in Type No. Cross Index, Technical Data Sections) to avoid the possibility of confusing the devices of one manufacturer with the devices of others. SYMBOLS & CODES COMMON TO MORE THAN ONE TECHNICAL SECTION LINE No. Vv New Type Revised Specifications # Non-JEDEC Type manufactured t_ @- TYPE No. outside U.S.A. i 6 , i LINE TYPE OLL. IN |M E[BVel No. No. DISS. | fab [FREE |A M @25C AIR. [XP Ww we vi ; @ With infinite heat sink Following symbols indicate temperature at which derating starts: T- 40c i- ec = 100% * 45C - 7C 4 Min. #-~ 50C =A 85C T- tae Gain bandwidth product (f,) %* Maximum frequency of oscillation QD ~ Figure of merit (frequency for unity power gain} A Minimum Z- Maximum Q ~ With infinite heat sink E * 50-65C A Ambient 70-80c C Case # - 85-100C J Junction # 110-125C S Storage T 130-135C $ 140-165C 170-200C Over 200C STRUCTURE (All Sections A Alloy Except 6 & 7} Switching type, also listed in Section 12 AN Annular - a . . D ~ Diffused or drift Chopper, also listed in Section 13, Category 10 pM Diftused These types also included elsewhere with other E 7 E, tons fee characteristics. See Type No. Cross Index for pt axial : EA Epitaxial annular alternate line no. EM Epitaxial mesa Radiation Resistant Devices, also listed in FE _ Feeed Section 13, Category 13, G ~ Grown GA Gallium Arsenide H Hometaxial MA Mico alloy MD Micro alloy diffused ME Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alioy diffused PE Ptanar epitaxial PL Planar Ss Surface barrier * Matched pair A Switching, other uses Z Chopper, other uses Z Noise figure 8db or below t Plastic package % Overlay ye i \ I ' Mai , cao |BVebo | Icbo. BIAS Cob |STRUC|Y200 le 0 le @MAX! Veb le hfe hoe hie hre -TURE | s/a JAD Veb TO200/D E Vv) A) Al Vv (A) mh 1 Ser, 9 fe QD lo A- lp b h parameters are Pope Pine Mb 74] Maximum D Vee 0) t- Nee A Minimum Pulsed Maximum At Va, Max. V., (See Mfr. Spec.) # aise 68 CB 8 hee Typical CEX yptca %* Available in selected ranges -1 * ~ 'cER CES AtTemp.> 28 =A 'cEO ~ AtTemp. 25C Case # Pulsed or Peak ~ i hb - q iis 7] Maximum $ Co T-c, $ Minimum po $ Tetrode # - BVcex or punch-through D av # Radiation Resistant Device CES (A - BV eo (sus) {Also See Above) .- BVoER * Pulsed $- Indicates min. valves given for BY cb, EV ceo, and BV abo,TYPE No BSV51 BCY50 GME4002 MT696 MT699 2SC16 AT336 MT910 MT1893 2SC360 PMT218 2N2214 28C121 280124 GME2002 MT753 AT326 AT330 AT319 AT323 AT335 AT347 2SC103At 2S8C838 A748B A749C GME1002 MT706 M1707 T1409 BF196-01 BSS21t M1743 T1408 MD2369BF* T1407 fab 5OM5A 6OMSA 6OMSA 80.M 80.M8 100MSA 100MA$ 100M 100M5 150M5 150M 200M 200M 200M8 200MSA 200M 220M5 220M8 230M8 230M5 230M 230MA5 250M5 250M 300M8 300M8 300M5 300M8 300M$ 30OMSA 350M8 400MSA 400M8 400M8A SOOMSA 5OOM8A IN| |ME FREE 2.5m m 2.5m m 1.7m 7m 2.5m m 2.5m m 2.5m m 2.5m m 1.7m 7m 1.7m 2.0m 2.1m 2.5m m 1.7m 7m 2.0m 1.5m 2.0m m AM Pp $J 8J $J 8J 8J 8J oJ 8J 8J 8J J $J 54 sJ oJ J oJ oJ oJ oJ oJ J ad J oJ oJ oJ 8J sJ $J oJ 7.0 |200m 3.0 |100m 8.0 5.0 5.0 5.0 5.0 7.0 7.0 5.0 5.0 5.0 1.0 1.0 4.0 5.0 6.0 6.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 4.0 3.0 3.0 3.0 4.0 5.0 5.0 3.0 5.0 3.0 30 100ng| 60 200 40 80 25 60 100/1.0m | 40 108|.05mg | 40 100 80 60 40 40 20 40 80 75 5.00 |2.0mg |330 5.00 |2.0m |600 1 100 10D | 1 20 IN ORDER OF Cob /STRUC E -TURE | s/a jA D MAX COLLECTOR DISSIPATION tA . MM11}A TA 10u . TO18 a tA X45 ut3 u u13 t tA 1.00 | 1 9.0 ta 20 80 30 40 1 4.0md tA t tA t 1.6p [PED 4p |ANA SYMBOLS AND CODES EXPLAINED IN INTERPRETER 61 61 D.A.T.A.