BFT92WT/R - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product speciﬁcation

File under Discrete Semiconductors, SC14 May 1994

DISCRETE SEMICONDUCTORS

Philips Semiconductors

BFT92W

PNP 4 GHz wideband transistor

May 1994 2

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT92W

FEATURES

•High power gain

•Gold metallization ensures

excellent reliability

•SOT323 (S-mini) package.

APPLICATION

It is intended as a general purpose

transistor for wideband applications

up to 2 GHz.

DESCRIPTION

Silicon PNP transistor in a plastic,

SOT323 (S-mini) package. The

BFT92W uses the same crystal as the

SOT23 version, BFT92.

PINNING

PIN DESCRIPTION

1base

2emitter

3collector

Marking code: W1.

Fig.1 SOT323.

handbook, 2 columns

MBC870

Top view

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCBO collector-base voltage open emitter −−−20 V

VCEO collector-emitter voltage open base −−−15 V

ICcollector current (DC) −−−35 mA

Ptot total power dissipation up to Ts=93°C; note 1 −−300 mW

hFE DC current gain IC=−15 mA; VCE =−10 V 20 50 −

Cre feedback capacitance IC= 0; VCB =−10 V; f = 1 MHz −0.5 −pF

fTtransition frequency IC=−15 mA; VCE =−10 V;

f = 500 MHz −4−GHz

GUM maximum unilateral power gain IC=−15 mA; VCE =−10 V;

f = 500 MHz; Tamb =25°C−17 −dB

F noise ﬁgure IC=−5 mA; VCE =−10 V;

f = 500 MHz −2.5 −dB

Tjjunction temperature −−150 °C

May 1994 3

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT92W

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note to the “Limiting values” and “Thermal characteristics”

1. Ts is the temperature at the soldering point of the collector pin.

CHARACTERISTICS

Tj=25°C (unless otherwise speciﬁed).

Note

1. GUM is the maximum unilateral power gain, assuming s12 is zero.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −−20 V

VCEO collector-emitter voltage open base −−15 V

VEBO emitter-base voltage open collector −−2V

Ccollector current (DC) −−25 mA

Ptot total power dissipation up to Ts=93°C; note 1 −300 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point up to Ts=93°C; note 1 190 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE= 0; VCB =−10 V −−−50 nA

hFE DC current gain IC=−15 mA; VCE =−10 V 20 50 −

fTtransition frequency IC=−15 mA; VCE =−10 V;

f = 500 MHz; Tamb =25°C−4−GHz

Cccollector capacitance IE=i

e= 0; VCB =−10 V;

f = 1 MHz −0.65 −pF

Ceemitter capacitance IC=i

c= 0; VEB =−0.5 V;

f = 1 MHz −0.75 −pF

Cre feedback capacitance IC= 0; VCB =−10 V;

f = 1 MHz −0.5 −pF

GUM maximum unilateral power gain;

note 1 IC=−15 mA; VCE =−10 V;

f = 500 MHz; Tamb =25°C−17 −dB

IC=−15 mA; VCE =−10 V;

f = 1 GHz; Tamb =25°C−11 −dB

F noise ﬁgure Γs=Γopt; IC=−5 mA;

VCE =−10 V; f = 500 MHz −2.5 −dB

Γs=Γopt; IC=−5 mA;

VCE =−10 V; f = 1 GHz −3−dB

GUM 10 s21 2

11 2

–()1s

22 2

–()

------------------------------------------------------------ dB.log=

May 1994 4

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT92W

Fig.2 Power derating curve.

0 50 100 200

200

MLB540

150T ( C)

Ptot

(mW)

300

400

100

Fig.3 DC current gain as a function of collector

current, typical values.

VCE =−10 V; Tj=25°C.

010 20

MLB541

I (mA)

Fig.4 Feedback capacitance as a function of

collector-base voltage, typical values.

IC= 0; f = 1 MHz.

020

MLB542

48 V (V)

Cre

(pF)

0.8

0.6

0.4

0.2

12 16

Fig.5 Transition frequency as a function of

collector current, typical values.

f = 500 MHz; Tamb =25°C.

MLB543

(GHz)

102

101

I (mA)

V =

10 V

5 V

May 1994 5

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT92W

Fig.6 Gain as a function of collector current,

typical values.

f = 500 MHz; VCE =−10 V.

MSG = maximum stable gain.

010 20

MLB544

gain

(dB)

I (mA)

GUM

MSG

Fig.7 Gain as a function of collector current,

typical values.

f = 1 GHz; VCE =−10 V.

MSG = maximum stable gain.

010 20

MLB545

gain

(dB)

I (mA)

MSG

GUM

Fig.8 Gain as a function of frequency,

typical values.

IC=−5 mA; VCE =−10 V.

MSG = maximum stable gain.

010

MLB546

102103104

gain

(dB)

f (MHz)

GUM

MSG

Gmax

Fig.9 Gain as a function of frequency,

typical values.

IC=−15 mA; VCE =−10 V.

MSG = maximum stable gain.

010

MLB547

102103104

gain

(dB)

f (MHz)

GUM

MSG

Gmax

May 1994 6

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT92W

VCE =−10 V; IC=−15 mA.

Fig.10 Common emitter input reflection coefficient (s11), typical values.

MLB548

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

180o

45o

90o

135o

0.5

0.2

0.5

0.2 1 2 5

3 GHz

40 MHz

0.5

VCE =−10 V; IC=−15 mA.

Fig.11 Common emitter forward transmission coefficient (s21), typical values.

MLB549

90o

135o

180o

90o

50 40 30 20 10

45o

135o45o

40 MHz 3 GHz

May 1994 7

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT92W

VCE =−10 V; IC=−15 mA.

Fig.12 Common emitter reverse transmission coefficient (s12), typical values.

MLB550

90o

135o

180o

90o

0.5 0.4 0.3 0.2 0.1

45o

135o45o

40 MHz

3 GHz

Fig.13 Common emitter output reflection coefficient (s22), typical values.

VCE =−10 V; IC=−15 mA.

MLB551

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

180o

45o

90o

135o

0.5

0.2

0.5

0.2 0.5 1 2 5

40 MHz

3 GHz

May 1994 8

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT92W

Fig.14 Minimum noise figure as a function of

collector current, typical values.

VCE =−10 V.

handbook, halfpage

010

MLB552

101

(dB)

I (mA)

1 GHz

500 MHz

Fig.15 Minimum noise figure as a function of

frequency, typical values.

VCE =−10 V.

handbook, halfpage

MLB553

(dB)

f (MHz) 104

103

102

I =

15 mA

10 mA

5 mA

2 mA

May 1994 9

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT92W

Fig.16 Common emitter noise figure circles, typical values.

f = 500 MHz; VCE =−10 V; IC=−5 mA; Zo=50Ω.

MLB554

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

180o

45o

90o

135o

0.5

0.2

0.5

1 2 5

F = 3 dB

F = 4 dB

F = 5 dB

0.2 0.5

min

F = 2.5 dB

opt

Fig.17 Common emitter noise figure circles, typical values.

f = 1 GHz; VCE =−10 V; IC=−5 mA; Zo=50Ω.

MLB555

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

180o

45o

90o

135o

0.5

0.2

0.5

1F = 3.5 dB

F = 4 dB

F = 5 dB

0.2

min

opt

F = 3 dB

2 50.5

May 1994 10

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT92W

SPICE parameters for the BFT92W crystal

SEQUENCE No. PARAMETER VALUE UNIT

1 IS 437.5 aA

2 BF 33.58 −

3 NF 1.009 −

4 VAF 23.39 V

5 IKF 99.53 mA

6 ISE 87.05 fA

7 NE 1.943 −

8 BR 4.947 −

9 NR 1.002 −

10 VAR 3.903 V

11 IKR 5.281 mA

12 ISC 35.88 fA

13 NC 1.393 −

14 RB 5.000 Ω

15 IRB 1.000 µA

16 RBM 5.000 Ω

17 RE 1.000 Ω

18 RC 10.00 Ω

19(1) XTB 0.000 −

20(1) EG 1.110 eV

21(1) XTI 3.000 −

22 CJE 746.6 fF

23 VJE 600.0 mV

24 MJE 0.357 −

25 TF 17.49 ps

26 XTF 1.354 −

27 VTF 155.6 mV

28 ITF 1.000 mA

29 PTF 45.00 deg

30 CJC 937.1 fF

31 VJC 396.4 mV

32 MJC 0.200 −

33 XCJC 0.106 −

34 TR 8.422 ns

35(1) CJS 0.000 F

Note

1. These parameters have not been extracted, the

default values are shown.

List of components (see Fig.18)

36(1) VJS 750.0 mV

37(1) MJS 0.000 −

38 FC 0.768 −

DESIGNATION VALUE UNIT

Cbe 2fF

cb 100 fF

Cce 100 fF

L1 0.34 nH

L2 0.10 nH

L3 0.34 nH

LB0.60 nH

LE0.60 nH

SEQUENCE No. PARAMETER VALUE UNIT

QLB= 50; QLE= 50; QLB,E(f)=QL

B,E√(f/fc);

fc= scaling frequency = 1 GHz.

Fig.18 Package equivalent circuit SOT323.

handbook, halfpage

MBC964

CB' C'

L1 L2

Ccb

Cbe ce

May 1994 11

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT92W

PACKAGE OUTLINE

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

Dimensions in mm.

Fig.19 SOT323.

handbook, full pagewidth

0.25

0.10

0.2

0.2 A

0.65

1.3

2.2

1.8

0.40

0.30

1.35

1.15

2.2

2.0

detail X

1.1

max

0.1

0.0

1.0

0.8

0.3

0.1

0.2

MBC871

Philips Semiconductors

Philips Semiconductors – a worldwide company

Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428)

BUENOS AIRES, Tel. (541)786 7633, Fax. (541)786 9367

Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. (02)805 4455, Fax. (02)805 4466

Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213,

Tel. (01)60 101-1236, Fax. (01)60 101-1211

Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands,

Tel. (31)40 783 749, Fax. (31)40 788 399

Brazil: Rua do Rocio 220 - 5th floor, Suite 51,

CEP: 04552-903-SÃO PAULO-SP, Brazil.

P.O. Box 7383 (01064-970).

Tel. (011)821-2327, Fax. (011)829-1849

Canada: INTEGRATED CIRCUITS:

Tel. (800)234-7381, Fax. (708)296-8556

DISCRETE SEMICONDUCTORS: 601 Milner Ave,

SCARBOROUGH, ONTARIO, M1B 1M8,

Tel. (0416)292 5161 ext. 2336, Fax. (0416)292 4477

Chile: Av. Santa Maria 0760, SANTIAGO,

Tel. (02)773 816, Fax. (02)777 6730

Colombia: IPRELENSO LTDA, Carrera 21 No. 56-17,

77621 BOGOTA, Tel. (571)249 7624/(571)217 4609,

Fax. (571)217 4549

Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. (032)88 2636, Fax. (031)57 1949

Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. (9)0-50261, Fax. (9)0-520971

France: 4 Rue du Port-aux-Vins, BP317,

92156 SURESNES Cedex,

Tel. (01)4099 6161, Fax. (01)4099 6427

Germany: PHILIPS COMPONENTS UB der Philips G.m.b.H.,

P.O. Box 10 63 23, 20043 HAMBURG,

Tel. (040)3296-0, Fax. (040)3296 213.

Greece: No. 15, 25th March Street, GR 17778 TAVROS,

Tel. (01)4894 339/4894 911, Fax. (01)4814 240

Hong Kong: PHILIPS HONG KONG Ltd., Components Div.,

6/F Philips Ind. Bldg., 24-28 Kung Yip St., KWAI CHUNG, N.T.,

Tel. (852)424 5121, Fax. (852)428 6729

India: Philips INDIA Ltd, Components Dept,

Shivsagar Estate, A Block ,

Dr. Annie Besant Rd. Worli, Bombay 400 018

Tel. (022)4938 541, Fax. (022)4938 722

Indonesia: Philips House, Jalan H.R. Rasuna Said Kav. 3-4,

P.O. Box 4252, JAKARTA 12950,

Tel. (021)5201 122, Fax. (021)5205 189

Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. (01)640 000, Fax. (01)640 200

Italy: PHILIPS COMPONENTS S.r.l.,

Viale F. Testi, 327, 20162 MILANO,

Tel. (02)6752.3302, Fax. (02)6752 3300.

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. (03)3740 5028, Fax. (03)3740 0580

Korea: (Republic of) Philips House, 260-199 Itaewon-dong,

Yongsan-ku, SEOUL, Tel. (02)794-5011, Fax. (02)798-8022

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA,

SELANGOR, Tel. (03)750 5214, Fax. (03)757 4880

Mexico: Philips Components, 5900 Gateway East, Suite 200,

EL PASO, TX 79905, Tel. 9-5(800)234-7381, Fax. (708)296-8556

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB

Tel. (040)783749, Fax. (040)788399

New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. (09)849-4160, Fax. (09)849-7811

Norway: Box 1, Manglerud 0612, OSLO,

Tel. (022)74 8000, Fax. (022)74 8341

Pakistan: Philips Electrical Industries of Pakistan Ltd.,

Exchange Bldg. ST-2/A, Block 9, KDA Scheme 5, Clifton,

KARACHI 75600, Tel. (021)587 4641-49,

Fax. (021)577035/5874546.

Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,

Metro MANILA, Tel. (02)810 0161, Fax. (02)817 3474

Portugal: PHILIPS PORTUGUESA, S.A.,

Rua dr. António Loureiro Borges 5, Arquiparque - Miraflores,

Apartado 300, 2795 LINDA-A-VELHA,

Tel. (01)14163160/4163333, Fax. (01)14163174/4163366.

Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. (65)350 2000, Fax. (65)251 6500

South Africa: S.A. PHILIPS Pty Ltd., Components Division,

195-215 Main Road Martindale, 2092 JOHANNESBURG,

P.O. Box 7430 Johannesburg 2000,

Tel. (011)470-5911, Fax. (011)470-5494.

Spain: Balmes 22, 08007 BARCELONA,

Tel. (03)301 6312, Fax. (03)301 42 43

Sweden: Kottbygatan 7, Akalla. S-164 85 STOCKHOLM,

Tel. (0)8-632 2000, Fax. (0)8-632 2745

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

Tel. (01)488 2211, Fax. (01)481 77 30

Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West

Road, Sec. 1. Taipeh, Taiwan ROC, P.O. Box 22978,

TAIPEI 100, Tel. (02)388 7666, Fax. (02)382 4382.

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-Bangna Road Prakanong,

Bangkok 10260, THAILAND,

Tel. (662)398-0141, Fax. (662)398-3319.

Turkey:Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,

Tel. (0212)279 2770, Fax. (0212)269 3094

United Kingdom: Philips Semiconductors Limited, P.O. Box 65,

Philips House, Torrington Place, LONDON, WC1E 7HD,

Tel. (071)436 41 44, Fax. (071)323 03 42

United States:INTEGRATED CIRCUITS:

811 East Arques Avenue, SUNNYVALE, CA 94088-3409,

Tel. (800)234-7381, Fax. (708)296-8556

DISCRETE SEMICONDUCTORS: 2001 West Blue Heron Blvd.,

P.O. Box 10330, RIVIERA BEACH, FLORIDA 33404,

Tel. (800)447-3762 and (407)881-3200, Fax. (407)881-3300

Uruguay: Coronel Mora 433, MONTEVIDEO,

Tel. (02)70-4044, Fax. (02)92 0601

For all other countries apply to: Philips Semiconductors,

International Marketing and Sales, Building BAF-1,

P.O. Box 218, 5600 MD, EINDHOVEN, The Netherlands,

Telex 35000 phtcnl, Fax. +31-40-724825

All rights are reserved. Reproduction in whole or in part is prohibited without the

prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation

or contract, is believed to be accurate and reliable and may be changed without

notice. No liability will be accepted by the publisher for any consequence of its

use. Publication thereof does not convey nor imply any license under patent- or

other industrial or intellectual property rights.

Printed in The Netherlands

123065/1500/01/pp12 Date of release: May 1994

Document order number: 9397 731 20011