© 2010 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 100 V
VDGR TJ= 25°C to 175°C, RGS = 1MΩ100 V
VGSS Continuous ± 20 V
VGSM Transient ± 30 V
ID25 TC= 25°C (Chip Capability) 250 A
ILRMS Lead Current Limit, RMS 160 A
IDM TC= 25°C, Pulse Width Limited by TJM 700 A
IATC= 25°C 125 A
EAS TC= 25°C3 J
PDTC= 25°C 1250 W
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 20 V/ns
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-264) 1.13/10 Nm/lb.in.
FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 100 V
VGS(th) VDS = VGS, ID = 1mA 3.0 5.0 V
IGSS VGS = ± 20V, VDS = 0V ± 200 nA
IDSS VDS = VDSS, VGS= 0V 50 μA
TJ = 150°C 1 mA
RDS(on) VGS = 10V, ID = 50A, Note 1 6.5 mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK250N10P
IXFX250N10P
VDSS = 100V
ID25 = 250A
RDS(on) ≤≤
≤≤
≤ 6.5mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 200ns
DS100021A(6/10)
PolarTM HiPerFETTM
Power MOSFET
Features
zDynamic dv/dt Rating
zAvalanche Rated
zFast Intrinsic Diode
zLow QG and RDS(on)
zLow Package Inductance
Advantages
zEasy to Mount
zSpace Savings
Applications
zDC-DC Converters
zBattery Chargers
zSwitch-Mode and Resonant-Mode
Power Supplies
zUninterrupted Power Supplies
zAC Motor Drives
zHigh Speed Power Switching
Applications
G = Gate D = Drain
S = Source Tab = Drain
PLUS247 (IXFX)
Tab
G
DS
TO-264 (IXFK)
S
G
D
Tab
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK250N10P
IXFX250N10P
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 250 A
ISM Repetitive, Pulse Width Limited by TJM 750 A
VSD IF = 100A, VGS = 0V, Note 1 1.3 V
trr 200 ns
QRM 0.7 μC
IRM 10.4 A
IF = 125A, -di/dt = 100A/μs
VR = 50V, VGS = 0V
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1 50 83 S
Ciss 16 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 4470 pF
Crss 290 pF
td(on) 25 ns
tr 30 ns
td(off) 50 ns
tf 18 ns
Qg(on) 205 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 77 nC
Qgd 80 nC
RthJC 0.12 °C/W
RthCS 0.15 °C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
TO-264 Outline
PLUS247TM Outline
Terminals: 1 - Gate
2 - Drain
3 - Source
4 - Drain
Terminals: 1 - Gate
2 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
© 2010 IXYS CORPORATION, All Rights Reserved
IXFK250N10P
IXFX250N10P
Fi g . 1. Ou tp u t C h ar acter i sti cs @ T
J
= 25ºC
0
25
50
75
100
125
150
175
200
225
250
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4
V
DS
- V olts
I
D
- Amperes
V
GS
= 15V
10V
9V
6V
8V
7V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
350
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
V
DS
- Vo lts
I
D
- Amperes
V
GS
= 15V
10V
9V
7V
6V
8V
Fi g . 3. Ou tp u t C h ar acter i sti cs @ T
J
= 150ºC
0
25
50
75
100
125
150
175
200
225
250
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8
V
DS
- V olts
I
D
- Ampe res
V
GS
= 15V
10V
9V
6V
5V
7V
8V
Fig. 4. R
DS(on)
Normalized to I
D
= 125A Valu e vs.
Junction Tem perature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normali zed
V
GS
= 10V
I
D
= 250A
I
D
= 125A
Fig. 5. R
DS(on)
Normalized to I
D
= 125A Valu e vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0 50 100 150 200 250 300 350
I
D
- A mp ere s
R
DS(on)
- Normalized
V
GS
= 10V
15V
- - - -
T
J
= 175ºC
T
J
= 25ºC
Fi g . 6. Maximu m D r ai n C u r r en t vs.
Case Temper atu r e
0
20
40
60
80
100
120
140
160
180
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Ampe res
Exter nal Lead Current Limit
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK250N10P
IXFX250N10P
Fig. 7. Input Adm ittance
0
20
40
60
80
100
120
140
160
180
200
3.54.04.55.05.56.06.57.07.58.0
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
0 20 40 60 80 100 120 140 160 180 200
I
D
- Amperes
g
f s - Si emens
T
J
= - 40ºC
150ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
350
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200 220
Q
G
- NanoCou lombs
V
GS
- Volts
V
DS
= 50V
I
D
= 125A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz Cisss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Ar ea
1
10
100
1,000
1 10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
100ms
Exter nal Lead Limit
© 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: IXF_250N10P (93)8-04-08
IXFK250N10P
IXFX250N10P
Fi g . 13. Ma ximum Tr an sien t Th er ma l I mpe d anc e
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
