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IFRMS = 2x 150 A
IFAVM = 2x 95 A
VRRM = 800-1800 V
Symbol Test Conditions Characteristic Values
IRTVJ = TVJM; VR = VRRM 10 mA
VFIF = 200 A; TVJ = 25°C 1.48 V
VT0 For power-loss calculations only 0.8 V
rTTVJ = TVJM 3mW
QSTVJ = 125°C; IF = 50 A, -di/dt = 3 A/ms 100 mC
IRM 24 A
RthJC per diode; DC current 0.51 K/W
per module other values 0.255 K/W
RthJK per diode; DC current see Fig. 6/7 0.71 K/W
per module 0.355 K/W
dSCreepage distance on surface 12.7 mm
dAStrike distance through air 9.6 mm
aMaximum allowable acceleration 50 m/s2
Features
●International standard package
JEDEC TO-240 AA
●Direct copper bonded Al2O3 -ceramic
base plate
●Planar passivated chips
●Isolation voltage 3600 V~
●UL registered, E 72873
Applications
●Supplies for DC power equipment
●DC supply for PWM inverter
●Field supply for DC motors
●Battery DC power supplies
Advantages
●Space and weight savings
●Simple mounting
●Improved temperature and power
cycling
●Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
VRSM VRRM Type
VV
900 800 MDD 56-08N1 B
1300 1200 MDD 56-12N1 B
1500 1400 MDD 56-14N1 B
1700 1600 MDD 56-16N1 B
1900 1800 MDD 56-18N1 B
Symbol Test Conditions Maximum Ratings
IFRMS TVJ = TVJM 150 A
IFAVM TC = 75°C; 180° sine 95 A
TC = 100°C; 180° sine 71 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 1400 A
VR = 0 t = 8.3 ms (60 Hz), sine 1650 A
TVJ = TVJM t = 10 ms (50 Hz), sine 1200 A
VR = 0 t = 8.3 ms (60 Hz), sine 1400 A
òi2dt TVJ = 45°C t = 10 ms (50 Hz), sine 9800 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 11300 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 7200 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 8100 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL £ 1 mA t = 1 s 3600 V~
MdMounting torque (M5) 2.5-4/22-35 Nm/lb.in.
Terminal connection torque (M5) 2.5-4/22-35 Nm/lb.in.
Weight Typical including screws 90 g
MDD 56
TO-240 AA
123312
Diode Modules
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
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MDD 56
Fig. 1 Surge overload current
IFSM: Crest value, t: duration Fig. 2 òi2dt versus time (1-10 ms) Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus
forward current and ambient
temperature (per diode)
Fig. 4 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
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Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Fig. 6 Transient thermal impedance
junction to case (per diode)
Fig. 7 Transient thermal impedance
junction to heatsink (per diode)
RthJK for various conduction angles d:
d RthJK (K/W)
DC 0.71
180°0.73
120°0.75
60°0.78
30°0.82
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.013 0.0015
2 0.055 0.045
3 0.442 0.485
4 0.2 1.25
MDD 56
RthJC for various conduction angles d:
d RthJC (K/W)
DC 0.51
180°0.53
120°0.55
60°0.58
30°0.62
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.013 0.0015
2 0.055 0.045
3 0.442 0.485
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