PZT 3906 PNP Silicon Switching Transistor * High DC current gain: 0.1mA to 100mA 4 * Low collector-emitter saturation voltage * Complementary type: PZT 3904 (NPN) 3 2 1 Type Marking PZT 3906 ZT 3906 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT-223 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 40 Collector-base voltage VCBO 40 Emitter-base voltage VEBO 5 DC collector current IC 200 mA Total power dissipation, TS = 80 C Ptot 1.5 W Junction temperature Tj 150 C Storage temperature Tstg Value Unit V -65 ... 150 Thermal Resistance Junction ambient 1) RthJA 117 Junction - soldering point RthJS 47 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu 1 Oct-13-1999 PZT 3906 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. V(BR)CEO 40 - - V(BR)CBO 40 - - V(BR)EBO 5 - - ICBO - - 50 ICEV - - 50 IBEV - - 50 DC Characteristics Collector-emitter breakdown voltage V IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IB = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current nA VCB = 30 V, IE = 0 Collector-emitter cutoff current VCE = 30 V, VBE = 0.5 Base-emitter cutoff current VCE = 30 V, +VBE = 0.5 DC current gain 1) - hFE IC = 0.1 mA, VCE = 1 V 60 - - IC = 1 mA, VCE = 1 V 80 - - IC = 10 mA, VCE = 1 V 100 - 300 IC = 50 mA, VCE = 1 V 60 - - IC = 100 mA, VCE = 1 V 30 - - Collector-emitter saturation voltage1) V VCEsat IC = 10 mA, IB = 1 mA - - 0.25 IC = 50 mA, IB = 5 mA - - 0.4 IC = 10 mA, IB = 1 mA - - 0.85 IC = 50 mA, IB = 5 mA - - 0.95 Base-emitter saturation voltage 1) VBEsat 1) Pulse test: t 300s, D = 2% 2 Oct-13-1999 PZT 3906 Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. 250 - - Ccb - - 4.5 Ceb - - 10 F - - 4 dB h11e 2 - 12 k h12e 0.1 - 10 10-4 h21e 100 - 400 - h22e 3 - 60 S td - - 35 ns tr - - 35 tstg - - 225 tf - - 75 AC Characteristics Transition frequency fT MHz IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 100 A, VCE = 5 V, RS = 1 k, f = 10Hz to 15.7kHz, Short-circuit input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transf.ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Short-circuit forward current transf.ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz Delay time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time VCC = 3 V, IC = 10 mA, IB1=IB2 = 1mA Fall time VCC = 3 V, IC = 10 mA, IB1=IB2 = 1mA 3 Oct-13-1999 PZT 3906 Switching Times Turn-on time when switched from + VBEoff = 0.5B to - VBEon = 10.6V, - ICon = 10mA - IBon = 1mA -3.0 V 275 Vi (V) D.U.T. +0.5 0 t Vi Vo 10 k Cs -10.6 tr tp EHN00057 Delay and rise time test circuit; total shunt capacitance of test jig and connectors Cs < 4pF; scope impedance = 10M Input waveform; tr < 1ns; tp = 300 ns = 0.002 Turn-off time ICon = 10mA; IBon = 1mA -3.0 V 275 Vi (V) +9.1 0 t Vi 10 k -10.9 D.U.T. Vo Cs 1N916 tp tf EHN00058 Storage and fall time test circuit; total shunt capacitance of test jig and connectors Cs < 4pF; scope impedance = 10M Input waveform; t r < 1ns; 10 s < t p 500 s = 0.02 4 Oct-13-1999 PZT 3906 Total power dissipation Ptot = f (TA*;TS ) Saturation voltage IC = f (VBEsat, VCEsat) * Package mounted on epoxy h FE = 10 PZT 3906 1.6 EHP00713 PZT 3906 2 EHP00714 mA Ptot W C 10 2 1.2 5 1.0 VCE 0.8 TA TS VBE 10 1 0.6 5 0.4 0.2 0.0 0 50 100 C 10 0 150 0 0.2 0.4 0.6 TA ; TS DC current gain hFE = f (I C) Ptotmax / PtotDC = f (tp ) VCE = 5V PZT 3906 Ptot max Ptot DC 10 1 EHP00302 tp D= T 1.0 V 1.2 VBE sat , VCE sat Permissible pulse load 5 0.8 tp h FE PZT 3906 EHP00715 5 T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 125 C 25 C 10 0 -55 C 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 -1 -1 10 10 0 5 10 0 5 10 1 mA 10 2 C tp 5 Oct-13-1999