PZT 3906
1 Oct-13-1999
PNP Silicon Switching Transistor
• High DC current gain: 0.1mA to 100mA
• Low collector-emitter saturation voltage
• Complementary type: PZT 3904 (NPN)
VPS05163
1
2
3
4
Type Marking Pin Configuration Package
PZT 3906 ZT 3906 1 = B 2 = C 3 = E 4 = C SOT-223
Maximum Ratings
Parameter Value UnitSymbol
VCEO 40 VCollector-emitter voltage
40Collector-base voltage VCBO
Emitter-base voltage VEBO 5
IC200DC collector current mA
1.5
Ptot
Total power dissipation, TS = 80 °C W
°C
Tj
Junction temperature 150
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction ambient 1) ≤117 K/W
RthJA
RthJS ≤47
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
PZT 3906
2 Oct-13-1999
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
max.typ.min.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
- V-40
V(BR)CEO
Collector-base breakdown voltage
IC = 10 µA, IB = 0
V(BR)CBO - -40
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5 - -
Collector cutoff current
VCB = 30 V, IE = 0
nA50
ICBO - -
Collector-emitter cutoff current
VCE = 30 V, VBE = 0.5
- 50-
ICEV
Base-emitter cutoff current
VCE = 30 V, +VBE = 0.5
IBEV - 50-
DC current gain 1)
IC = 0.1 mA, VCE = 1 V
IC = 1 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V
IC = 50 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
hFE
60
80
100
60
30
-
-
-
-
-
-
-
-
300
-
-
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
V
0.25
0.4
VCEsat
-
-
-
-
0.85
0.95
Base-emitter saturation voltage 1)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VBEsat
-
-
-
-
1) Pulse test: t ≤ 300µs, D = 2%
PZT 3906
3 Oct-13-1999
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol UnitValues
typ. max.min.
AC Characteristics
MHz
fT-250Transition frequency
IC = 10 mA, VCE = 20 V, f = 100 MHz
-
pFCollector-base capacitance
VCB = 5 V, f = 1 MHz
Ccb 4.5- -
10- -
Ceb
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
dB
F-Noise figure
IC = 100 µA, VCE = 5 V, RS = 1 kΩ,
f = 10Hz to 15.7kHz,
- 4
kΩ
Short-circuit input impedance
IC = 1 mA, VCE = 10 V, f = 1 kHz
2
h11e 12-
10-4
Open-circuit reverse voltage transf.ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
0.1 -
h12e 10
- 400
h21e 100 -Short-circuit forward current transf.ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
-Open-circuit output admittance
IC = 1 mA, VCE = 10 V, f = 1 kHz
h22e 60 µS
3
td
Delay time
VCC = 3 V, IC = 10 mA, IB1 = 1 mA,
VBE(off) = 0.5 V
ns35--
Rise time
VCC = 3 V, IC = 10 mA, IB1 = 1 mA,
VBE(off) = 0.5 V
- 35-
tr
225--
tstg
Storage time
VCC = 3 V, IC = 10 mA, IB1=IB2 = 1mA
Fall time
VCC = 3 V, IC = 10 mA, IB1=IB2 = 1mA
tf- - 75
PZT 3906
4 Oct-13-1999
Switching Times
Turn-on time when switched from + VBEoff = 0.5B to - VBEon = 10.6V, - ICon = 10mA
- IBon = 1mA
EHN00057
275
10
-3.0
0
+0.5
C
-10.6
D.U.T.
Vi
trtp
(V)
s
Vo
i
V
Ω
k
V
Ω
t
Input waveform; tr < 1ns; tp = 300 ns
δ = 0.002
Delay and rise time test circuit; total shunt
capacitance of test jig and connectors
Cs < 4pF; scope impedance = 10MΩ
Turn-off time ICon = 10mA; IBon = 1mA
EHN00058
275
10
-3.0 V
0
+9.1
C
-10.9 1N916
tp
tf
s
Vi
Vo
i
V
D.U.T.
(V)
t
Ω
kΩ
Input waveform; tr < 1ns; 10 µs < tp ≤ 500 µs
δ = 0.02
Storage and fall time test circuit; total shunt
capacitance of test jig and connectors
Cs < 4pF; scope impedance = 10MΩ
PZT 3906
5 Oct-13-1999
Total power dissipation Ptot = f (TA*;TS)
* Package mounted on epoxy
0
0.0
EHP00713PZT 3906
150
W
50 100 ˚C
0.2
0.4
0.6
0.8
1.0
1.2
1.6
T
AS
T
P
tot
T T;
AS
Saturation voltage IC = f (VBEsat, VCEsat)
hFE = 10
EHP00714PZT 3906
2
0V
BE sat
C
10
1
10
0
5
Ι
V
mA
0.2 0.4 0.6 0.8 1.0 1.2
CE sat
V,
5
10
2
V
BE
V
CE
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00302PZT 3906
-6 -5
10
0
10s
0
10
2
10
5
5
10
-4
10
-3
10
-2
10
1
5
D
=
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0
t
p
=
DT
t
p
T
tot max
tot
P
DC
P
p
t
DC current gain hFE = f (IC)
VCE = 5V
EHP00715PZT 3906
10
10 mA
h
C
5
FE
10
1
0
10
-1
5
10 10 10
-1 0 1 2
Ι
125 ˚C
25 ˚C
-55 ˚C
55
