DATA SH EET
Product data sheet
Supersedes data of 1998 Jan 09
1999 May 11
DISCRETE SEMICONDUCTORS
BAV199W
Low-leakage double diode
db
ook, halfpage
M3D102
1999 May 11 2
NXP Semiconductors Product data sheet
Low-leakage double diode BAV199W
FEATURES
•Small plastic SMD package
•Low leakage current: typ. 3 pA
•Switching time: typ. 0.8 μs
•Continuous reverse voltage:
max. 75 V
•Repetitive peak reverse voltage:
max. 85 V
•Repetitive peak fo rward current:
max. 500 mA.
APPLICATIONS
•Low-leakage current applications in
surface mounted circuits.
DESCRIPTION
Epitaxial, medium-speed switching,
double diode in a sm all plastic
SOT323 (SC-70 ) SMD pa ckage.
The diodes are conne cted in series.
PINNING
PIN DESCRIPTION
1anode
2cathode
3cathode; anode
Fig.1 Simplified outline (SOT323; SC-70) and sy m bol.
Marking code: JY- = made in Hong Kong; JYt = made in Malaysia.
handbook, halfpage
12
3
MAM391
21
3
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Ratin g S ystem (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode unless otherwise specified
VRRM repetitive peak reverse voltage −85 V
VRcontinuous revers e voltage −75 V
IFcontinuous forward current single diode loaded; Ts = 90 °C; see Fig.2 −135 mA
double diode loaded; Ts = 90 °C; see Fig.2 −110 mA
IFRM repetitive peak forward current −500 mA
IFSM non-repe titive peak forward
current square wave; Tj = 25 °C prior to surge;
see Fig.4
tp = 1 μs−4 A
tp = 1 ms −1 A
tp = 1 s −0.5 A
Ptot total power dissipation single diode loaded; Ts = 90 °C−150 mW
double diode loaded; Ts = 90 °C−240 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
1999 May 11 3
NXP Semiconductors Pr oduct dat a shee t
Low-leakage double diode BAV199W
ELECTRICAL CHARACTERISTIC S
Tj = 25 °C unless otherwise specified.
THERMAL CHARACTE RISTICS
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode
VFforward voltage see Fig.3
IF = 1 mA −900 mV
IF = 10 mA −1 000 mV
IF = 50 mA −1 100 mV
IF = 150 mA −1 250 mV
IRreverse current see Fig.5
VR = 75 V 0.003 5nA
VR = 75 V; Tj = 150 °C 3 80 nA
Cddiode capacit an ce f = 1 MHz; VR = 0; see Fig.6 2−pF
trr reverse recove ry time when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.7
0.8 3μs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point Ts = 90 °C400 K/W
1999 May 11 4
NXP Semiconductors Pr oduct dat a shee t
Low-leakage double diode BAV199W
GRAPHICAL DATA
(1) Single diode loaded.
(2) Double diodes loaded.
Fig.2 Maximum permissible continuous forward
current as a function of soldering point
temperature; per diode.
handbook, halfpage
0 100 200
(1)
(2)
Ts (°C)
IF
(mA)
300
0
200
100
MBK522
Fig.3 Forward current as a function of forward
voltage; per diode.
h
andbook, halfpage
0 1.6
300
0
100
200
MLB752 - 1
0.8 1.20.4
IF
(mA)
V (V)
F
(1) (2) (3)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode.
Based on square wave currents.
Tj = 25 °C prior to surge.
handbook, full pagewidth
MBG704
10 tp (μs)
1
IFSM
(A)
102
10−1104
102103
10
1
1999 May 11 5
NXP Semiconductors Pr oduct dat a shee t
Low-leakage double diode BAV199W
VR = 75 V.
(1) Maximum values.
(2) Typical values.
Fig.5 Reverse current as a fun ction of junc tion
temperature; per diode.
handbook, halfpage
10
2
10
3
150 200
500
MLB754
100
10
1
10
1
10
2
IR
(nA)
T ( C)
o
j
(1)
(2)
Fig.6 Diode capacitance as a function of reverse
voltage; per diode; typical values.
f = 1 MHz; Tj = 25 °C.
handbook, halfpage
01020155
2
0
1
MBG526
V
R
(V)
Cd
(pF)
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩ
IF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
Fig.7 Reverse reco very time test circuit and waveforms.
(1) IR = 1 mA.
Input signal: reverse pulse rise time tr = 0.6 ns; revers e voltage pulse duration tp = 5 μs; duty factor δ = 0.05.
Oscilloscope: rise time tr = 0.35 ns.
1999 May 11 6
NXP Semiconductors Pr oduct dat a shee t
Low-leakage double diode BAV199W
PACKAGE OUTLINE
UNIT A1
max bpcD Ee1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface mounted package; 3 leads SOT32
3
97-02-28
1999 May 11 7
NXP Semiconductors Product data sheet
Low-leakage double diode BAV199W
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or co mpleting a design.
2. The product s tatus of device(s) described in this document may have changed since this document was publishe d
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the produc t specification.
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accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
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consequenc es of use of such informa tion.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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of an NXP Semiconductors product can reasonably be
expected to result in pe rs onal injury, death or seve re
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modificat ion .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this documen t d oes not form part o f an y q uot ation or co ntract, is believed to b e a ccur ate a nd reliable and may be change d
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Customer notification
This data sheet was changed to reflect the new company name NXP Semicon ductors. No changes were
made to the content, except for the legal definitions and disclaimer s.
Printed in The Netherlands 115002/00/03/pp8 Date of releas e: 1999 May 11 Document orde r number: 9397 750 05947
