,SUPERTEX INC 8773295 SUPERTEX INC O1 vel ?73275 OOO1?3)1 O1E O1731 DB 7 CTs] =) gt plas P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information T- 37-17 BV ocs / Rosiom loon Order Number / Package BV nas (max) (min) TO-3 TO-39 TO-220 DICE -60V 2a 5A VP1106N1 VP1106N2 VP1106N5 VP1106ND =100V 20 5A VP1110N1 VP1110N2 VP11140N5 VP1110ND Features Advanced DMOS Technology oH0oaaeae aod Freedom from secondary breakdown Low power drive requirement Ease of paralleling Low Ci, and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-Channel devices Applications HOoooo00d0 Motor control Convertors Amplitiers Switches Power supply circuits Driver (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage These enhancement-mode (normally-off) power transistors util- iz a vertical DMOS structure and Supertex's well-proven silicon- gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally- induced secondary breakdown. Supertex Vertical DMOS Power FETs are ideally suited to a wide range of switching and amplifying applications where high break- down voltage, high input Impedance, low input capacitance, and fast switching speeds are desired. Package Options (Notes 1 and 2) TO-39 oss TO-3 (2) bGs Gate-to-Source Voltage +20V i 55? 0; Operating and Storage Temperature 55C to + 150C Note 1: See Package Outline section for discrete pinouts. Soldering Temperature" 300C Note 2: See Array section for quad pinouts. TO-220 "Distance of 1.6 mm from case for 10 seconds. 9-49 = SAAR TREE TSE Rm CSETSUPERTEX INC Oh pe War7ae9s OO01?32 3 i 2 gs VP11A Thermal Characteristics ro 39 - Tw F Package 1, (continuous)* I, (pulsed)* Power Dissipation | 6, he lor form @T, = 25C CW CW TO-3 -6.0A -15A 75W 50 1.66 -6A -15A TO-39 1,54 -7A 6w 125 20.8 -1.5A -TA TO-220 -4.0A . -12A 45W 70 2.78 -4A -12A * Ip (continuous) is limited by max rated Tj: Electrical Characteristics (@ 25C unless otherwise specified) (Notes 1 and 2) Symbol Parameter Min Typ Max Unit Conditions BV os Drain-to-Source VP1110 | -100 Vv I= -5mA, Ve. = 0 Breakdown Voltage VP1106 60 D as Vegsiny Gate Threshold Voltage 1.5 -3.5 Vv Vos = Vpg: |p = -5mA AV coun) Change in Vasun with Temperature -4.0 mvc 1, =-5MA, Veg = Vog lass Gate Body Leakage -100 nA Vg = F20V, Vig = 0 loss Zero Gate Voltage Drain Current -50 pA Vag = 0; Vag = Max Rating 5 mA Veg = 0; Vog = 0.8 Max Rating T, = 125C loony ON-State Drain Current -1.0 A Veg = 75V, Vog = -25V -5.0 Vg 710V, Vig = -25V Roscon, Static Drain-to-Source 2 5 Q Veg = ~BV, |p = -0.5A ON-State Resistance 415 2 Vag = -10V, Ip = -2.0A AR sion) Change in Rogioy with Temperature 0.7 1.0 iC I, =-1.0A, Vag = -10V Ges Forward Transconductance 0.9 13 5 Vog = 25V, |, = -2.0A G Input Capacitance 300 350 1S8 P P Vag = 0, Vos = -20V Coss Common Source Output Capacitance 100 150 pF f=1MHz Cass Reverse Transfer Capacitance 20 35 t Turn-ON Delay Time 35 40 pt Vop = -18V t, Rise Time 20 30 ns 1 -2.0A 1. Dp =e taorr) Turn-OFF Delay Time 40 50 R, = 500 t Fall Time 10 20 Vp Diode Forward Voltage Drop 1.4 2.5 V lon = -1.0A, Vo, = 0 ta Reverse Recovery Time 400 ns Ign = TOA, Vag = 0 Note 1: Al! D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 3001s pulse, 2% duty cycle.) Note 2: AIlA.C. parameters sample tested. Switching Waveforms and Test Circuit 10%. Input __- A ON) tOFF) ta(on) , tr ta(OFF), tt Output ____ 10% \ iL 90%. 90% 9-50 PULSE GENERATOR SCOPE D.U.T.SUPERTEX INC on vejar73zess ooo17a3 s VPIIA 7-39-79 Output Characteristics Saturation Characteristics Typical Performance Curves Vas z-- ua @ # Ww Ww = = Z z Q S 0 10 20 30 ~40 ~50 0 2 4 -6 -8 10 Vps (VOLTS) Vos (VOLTS) Transconductance Vs. Drain Current Power Dissipation Vs. Case Temperature 3 3 = c w < a S 0 = , 0 =1 2 ~3 4 5 0 25 50 16 100 125 150 Ip (AMPERES) To CC) Maximum Rated Safe Operating Area Thermal Response Characteristics 10 a w N 3 < z= TO-220 1 Oo = 25C 3 2 PD = 115W w Ww i 3 oa z 2 < a Qa a 4 ft ad < = rc Ww zr - 0.01 0.1 1 10 100 0,001 0,01 0.1 1 10 Vos (VOLTS) tp (SECONDS) 9-51Neen ee eee eee SUPERTEX INC O1 ve Pazzaaqs OOO?34 7? I VPI1A ; 7-37-79 BVDSS Variation with Temperature ON- Resistance Vs. Drain Source Current } 5 4 a we ~ 5 3 z = 3 Vas = 10V 2 8 = 3 Zz z 5 > nn an a a i > ao 1 0 ~50 0 50 100 150 0 -t 2 ~3 4 5 Ty PC} ID (AMPERES) Transfer Characteristics \ V(th) and RDS Variation with Temperature 1.2 = 25V Ty = 85C td a w 3 N n a fe < 4 E 5 KS 0.9 2 a 2 0.8 0.7 0 2 -4 -6 ~8 10 50 0 50 100 150 VGs (VOLTS) Ts Cc} Capacitance Vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 600 f= 1MHz 450 YGS = 0 2 ~ g Lo c F < 300 18S. a 9 \ 2 a 6 eo coss 150 CrRss 0 = Oo 10 20 30 40 oO 1 2 3 4 5 Vpbs (VOLTS) Og (NANOCOULOMBS) 9-52 - r