©2002 Fairchild Semiconductor Corporation Rev. A4, November 2002
SS9013
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
hFE Classification
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 20 V
VEBO Emitter-Base Voltage 5 V
ICCollector Current 500 mA
PCCollector Power Dissipation 625 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parame ter Test Condit ion Min. Typ. Max. Units
BVCBO Collect or-B ase Break down Voltage IC =100µA, IE =0 40 V
BVCEO Collect or-E mitter Break down Voltage IC =1mA, IB =0 20 V
BVEBO E mitter-B ase Break down Voltage IE =100µA, IC =0 5 V
ICBO Collector Cut-off Current VCB =25V, IE =0 100 nA
IEBO Emitter Cut-off Current VEB =3 V, IC =0 100 nA
hFE1
hFE2
DC Current Gain VCE =1V, IC =50mA
VCE =1V, IC =500mA 64
40 120
120 202
VCE (sat) Collector-Emitter Saturat ion Voltage IC =500mA, IB =50mA 0.16 0.6 V
VBE (sat) Base-Emitter Saturation Voltage IC =500mA, IB =50mA 0.91 1.2 V
VBE (on) Base-Emitter On Voltage VCE =1V, IC =10mA 0.6 0.67 0.7 V
Classification D E F G H
hFE1 64 ~ 91 78 ~ 112 96 ~ 135 112 ~ 166 144 ~ 202
1. Emitter 2. Base 3. Collector
SS9013
1W Output Amplifier of Potable Radios in
Class B P ush-pull Operation .
• High total power dissipation. (PT=625mW)
• High Collector Current. (IC=500mA)
• Complementary to SS9012
• Excellent hFE linearity. TO-92
1
©2002 Fairchild Semiconductor Corporation
SS9013
Rev. A4, November 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Vo ltage
Collector-Emitter Saturation Voltage Figure 4. Current Gain Bandwidth Product
0 1020304050
0
2
4
6
8
10
12
14
16
18
20 IB = 160µAIB = 140µA
IB = 120µA
IB = 100µA
IB = 80µA
IB = 60µA
IB = 40µA
IB = 20µA
IC [mA], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
1 10 100 1000 10000
1
10
100
1000 VCE = 1V
hFE, DC CURRENT GAIN
IC [mA], COLLECTOR CURRENT
1 10 100 1000 10000
10
100
1000
10000 IC = 10 IB
VBE (sat)
VCE (sat)
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
IC [mA], COLLECTOR CURRE NT
1 10 100 1000 10000
1
10
100
1000 VCE = 6V
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
IC [mA], COLLECTOR CURRENT
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Package Dimensions
SS9013
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A4, November 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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