© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C75 V
VDGR TJ= 25°C to 175°C, RGS = 1MΩ75 V
VGSM Transient ± 20 V
ID25 TC= 25°C 120 A
ILRMS Lead Current Limit, RMS 75 A
IDM TC= 25°C, pulse width limited by TJM 300 A
IATC= 25°C60 A
EAS TC= 25°C 600 mJ
PDTC= 25°C 250 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6mm (0.062in.) from case for 10s 300 °C
Tsold Plastic body for 10 seconds 260 °C
MdMounting torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 75 V
VGS(th) VDS = VGS, ID = 250μA 2.0 4.0 V
IGSS VGS = ± 20V, VDS = 0V ±200 nA
IDSS VDS = VDSS 5 μA
VGS = 0V TJ = 150°C 150 μA
RDS(on) VGS = 10V, ID = 60A, Notes 1, 2 7.7 mΩ
TrenchT2TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA120N075T2
IXTP120N075T2
VDSS = 75V
ID25 = 120A
RDS(on) ≤≤
≤≤
≤ 7.7mΩΩ
ΩΩ
Ω
DS100051(10/08)
G = Gate D = Drain
S = Source TAB = Drain
Preliminary Technical Information
TO-263 (IXTA)
GS
(TAB)
TO-220 (IXTP)
GDS(TAB)
Features
zInternational standard packages
z175°C Operating Temperature
zAvalanche Rated
zLow RDS(on)
zHigh current handling capability
Advantages
zEasy to mount
zSpace savings
zHigh power density
Applications
zAutomotive
- Motor Drives
- 12V Battery
- ABS Systems
zDC/DC Converters and Off-line UPS
zPrimary- Side Switch
zHigh Current Switching Applications
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA120N075T2
IXTP120N075T2
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1 38 62 S
Ciss 4740 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 585 pF
Crss 75 pF
td(on) 13 ns
tr 33 ns
td(off) 21 ns
tf 18 ns
Qg(on) 78 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 24 nC
Qgd 23 nC
RthJC 0.60 °C/W
RthCH TO-220 0.50 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
IS VGS = 0V 120 A
ISM Repetitive, Pulse width limited by TJM 480 A
VSD IF = 60A, VGS = 0V, Note 1 1.3 V
trr 50 ns
IRM 4 A
QRM 100 nC
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 5Ω (External)
IF = 60A, VGS = 0V
-di/dt = 100A/μs
VR = 37V
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
TO-263 (IXTA) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
TO-220 (IXTP) Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2008 IXYS CORPORATION, All rights reserved
IXTA120N075T2
IXTP120N075T2
Fi g . 1. Ou tp u t C h ar acteri sti cs
@ 25ºC
0
10
20
30
40
50
60
70
80
90
100
110
120
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
9V
7V
5V
6V
8V
Fi g . 2. Exten d ed Ou tput Ch ar acter i sti cs
@ 25ºC
0
50
100
150
200
250
300
012345678910
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
9V
8V
6V
7V
5V
Fi g . 3. Ou tp u t C h ar acteri sti cs
@ 150ºC
0
10
20
30
40
50
60
70
80
90
100
110
120
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
9V
8
V
5
V
7
V
6
V
Fig. 4. R
DS(on)
Normalized to I
D
= 60A Value
vs. Junction T em perature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 120A
I
D
= 60A
Fig. 5. R
DS(on)
Normalized to I
D
= 60A Val ue
vs. Dr ai n C u r ren t
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 30 60 90 120 150 180 210 240 270 300
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V
- - - - -
T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case Temperature
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA120N075T2
IXTP120N075T2
IXYS REF: T_120N075T2(V4)10-29-08-A
Fig. 7. Input Admi ttance
0
20
40
60
80
100
120
140
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. T ransconductance
0
10
20
30
40
50
60
70
80
90
100
0 20 40 60 80 100 120 140 160
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
150ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
50
100
150
200
250
300
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate C har g e
0
1
2
3
4
5
6
7
8
9
10
0 1020304050607080
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 38V
I
D
= 60A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1MHz
Ciss
Crss
Coss
Fi g . 12. Forwar d -B i as Safe Oper ati n g Area
1
10
100
1000
1 10 100
V
DS
- Volts
I
D
- Amperes
25µs100µs
1ms
10ms
DC, 100ms
R
DS(on)
Limit
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
Lead Limit
© 2008 IXYS CORPORATION, All rights reserved
IXTA120N075T2
IXTP120N075T2
Fig. 14. Resistive Turn-on
Ri se Time vs. D r ai n C u r r en t
0
5
10
15
20
25
30
35
40
45
60 65 70 75 80 85 90 95 100 105 110 115 120
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 25ºC
T
J
= 125ºC
R
G
= 5
V
GS
= 10V
V
DS
= 38V
Fi g. 15. R esi stive Turn -on
Switc h i n g Times vs. G ate R esi s tan ce
0
20
40
60
80
100
120
140
160
180
200
4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
r
- Nanoseconds
0
5
10
15
20
25
30
35
40
45
50
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 38V
I
D
= 120A, 60A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Tem perature
14
16
18
20
22
24
26
28
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
5
10
15
20
25
30
35
40
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5, V
GS
= 10V
V
DS
= 38V
I
D
= 60A
I
D
= 120A
Fi g . 17. R esi sti ve Turn -off
Switching Times vs. Drain Current
14
16
18
20
22
24
26
60 70 80 90 100 110 120
I
D
- Amperes
t
f
- Nanoseconds
14
18
22
26
30
34
38
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5, V
GS
= 10V
V
DS
= 38V
T
J
= 25ºC
T
J
= 125ºC
Fi g. 13. R esi stive Turn -o n
Ri se Ti me vs. Ju n ct i o n Temper a tu r e
0
5
10
15
20
25
30
35
40
45
50
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 5
V
GS
= 10V
V
DS
= 38V
I
D
= 60A
I
D
= 120A
Fi g. 18. R esi stive Turn -o ff
Switc h i n g Times vs. Ga te R esi st an ce
0
20
40
60
80
100
120
140
4 6 8 101214161820
R
G
- Ohms
t
f
- Nanoseconds
0
20
40
60
80
100
120
140
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 38V
I
D
= 60A,120A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA120N075T2
IXTP120N075T2
Fi g. 19. Maximum Tran si ent Th er mal I mp ed an ce
0.01
0.10
1.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
IXYS REF: T_120N075T2(V4)10-29-08-A
