Semiconductor Group 1
NPN Silicon AF Transistors BCX 68
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking Package1)
Pin Configuration
BCX 68
BCX 68-10
BCX 68-16
BCX 68-25
Q62702-C1572
Q62702-C1864
Q62702-C1865
Q62702-C1866
–
CB
CC
CD
SOT-89
123
B C E
Junction - ambient 2) Rth JA ≤ 75 K/W
Junction - soldering point Rth JS ≤ 20
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 20 V
Peak collector current ICM 2
Base current IB100 mA
Collector current IC1A
Junction temperature Tj150 ˚C
Total power dissipation, TS = 130 ˚C Ptot 1W
Storage temperature range Tstg – 65 … + 150
Collector-base voltage VCB0 25
Thermal Resistance
Emitter-base voltage VEB0 5
Peak base current IBM 200
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm ×40 mm ×1.5 mm/6 cm2 Cu.
●For general AF applications
●High collector current
●High current gain
●Low collector-emitter saturation voltage
●Complementary type: BCX 69 (PNP)
5.91
Semiconductor Group 2
BCX 68
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
VCollector-emitter breakdown voltage
I
C = 30 mA V(BR)CE0 20 – –
Collector-base breakdown voltage
I
C = 10 µAV(BR)CB0 25 – –
–
DC current gain1)
I
C = 5 mA, VCE = 10 V
I
C = 500 mA, VCE = 1 V BCX 68
BCX 68-10
BCX 68-16
BCX 68-25
I
C = 1 A, VCE = 1 V
hFE 50
85
85
100
160
60
–
–
100
160
250
–
–
375
160
250
375
–
MHzTransition frequency
I
C = 100 mA, VCE = 5 V, f = 20 MHz fT– 100 –
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
AC characteristics
Emitter-base breakdown voltage
I
E = 1 µAV(BR)EB0 5––
nA
µA
Collector cutoff current
VCB = 25 V
VCB = 25 V, TA = 150 ˚C
ICB0 –
––
–100
100
µAEmitter cutoff current
VEB = 5 V IEB0 ––10
V
Collector-emitter saturation voltage1)
I
C = 1 A, IB = 100 mA VCEsat – – 0.5
Base-emitter voltage1)
I
C = 5 mA, VCE = 10 V
I
C = 1 A, VCE = 1 V
VBE –
–0.6
––
1
1) Pulse test: t≤300 µs, D = 2 %.
Semiconductor Group 3
BCX 68
Total power dissipation Ptot =f(TA*; TS)
* Package mounted on epoxy
Permissible pulse load Ptot max/Ptot DC = f (tp)
Collector current IC=f(VBE)
VCE = 1 V
Transition frequency fT=f(IC)
VCE = 5 V
Semiconductor Group 4
BCX 68
DC current gain hFE =f(IC)
VCE = 1 V
Collector cutoff current ICB0 =f(TA)
VCB = 25 V
Collector-emitter saturation voltage
IC=f(VCEsat)
hFE = 10
Base-emitter saturation voltage
IC=f(VBEsat)
hFE = 10
