BUH515FP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■HIGH VOLTAGECAPABILITY
■FULLY MOLDED ISOLATED PACKAGE
■2000V DC ISOLATION(U.L. COMPLIANT)
APPLICATIONS:
■HORIZONTAL DEFLECTION FOR COLOUR
TV AND MONITORS
■SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUH515FP is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structureto enhance switching speeds.
The BUH series is designed for use in horizontal
deflectioncircuits in televisionsand monitors. INTERNAL SCHEMATIC DIAGRAM
April 1998
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE= 0) 1500 V
VCEO Collector-Emitter Voltage (IB= 0) 700 V
VEBO Emitter-Base Voltage (IC=0) 10 V
I
CCollector Current 8 A
ICM Collector Peak Current (tp<5ms) 12 A
I
BBase Current 5 A
IBM Base Peak Current (tp<5ms) 8 A
P
tot Total Dissipation at Tc=25o
C38W
T
stg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
123
TO-220FP
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 3.3 oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unlessotherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE =0) V
CE =1500V
V
CE =1500V T
j= 125 oC0.2
2mA
mA
IEBO Emitter Cut-off Current
(IC=0) V
EB =5V 100 µA
V
CEO(sus) Collector-Emitter
Sustaining Voltage IC= 100 mA 700 V
VEBO Emitter-Base Voltage
(IC=0) I
E=10mA 10 V
V
CE(sat)∗Collector-Emitter
Saturation Voltage IC=5A I
B=1.25A 1.5 V
V
BE(sat)∗Base-Emitter
Saturation Voltage IC=5A I
B=1.25A 1.3 V
h
FE∗DC Current Gain IC=5A V
CE =5V
I
C=5A V
CE =5V T
j= 100 oC6
412
ts
tf
RESISTIVE LOAD
Storage Time
Fall Time
VCC =400V I
C=5A
I
B1 =1.25A I
B2 =2.5A 2.7
190 3.9
280 µs
ns
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC= 5 A f = 15625 Hz
IB1 =1.25A I
B2 =-1.5A
V
ceflyback = 1050 sin
π
5106
tV
2.3
350 µs
ns
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC= 5A f = 31250 Hz
IB1 =1.25A I
B2 =-1.5A
V
ceflyback = 1200 sin
π
5106
tV
2.3
200 µs
ns
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area Thermal Impedance
BUH515FP
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Derating Curve
Collector Emitter SaturationVoltage
PowerLosses at 16 KHz
DC Current Gain
BaseEmitter Saturation Voltage
Switching Time Inductive Loadat 16KHz
(see figure 2)
BUH515FP
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PowerLosses at 32 KHz Switching Time InductiveLoad at 32 KHz
(see figure 2)
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
IB1 has to be provided for the lowest gain hFE at
100 oC (line scan phase). On the other hand,
negative base current IB2 must be provided to
turn off the power transistor (retrace phase).
Most of the dissipation, in the deflection
application, occurs at switch-off. Therefore it is
essential to determine the value of IB2 which
minimizes power losses, fall time tfand,
consequently,Tj. A new set of curves have been
defined to give total power losses, tsand tfas a
function of IB2 at both 16 KHz and 32 KHz
scanning frequencies for choosing the optimum
negative drive. The test circuit is illustrated in
figure 1.
Inductance L1serves to control the slope of the
negative base current IB2 to recombine the
excess carrier in the collector when base current
is still present, this would avoid any tailing
phenomenonin thecollector current.
The values of L and C are calculated from the
followingequations:
1
2
L
(
I
C
)2=1
2
C
(
V
CEfly
)2ω=2π
f
=1
√
L
C
Where IC= operating collector current, VCEfly=
flyback voltage, f= frequency of oscillation during
retrace.
BASE DRIVE INFORMATION
Reverse Biased SOA Switching Time Resistive Load
BUH515FP
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Figure1: Inductive Load Switching TestCircuit.
Figure2: Switching Waveformsin a DeflectionCircuit
BUH515FP
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
¯
F
L3
G1
123
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
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Information furnished is believed tobe accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rightsof third parties which may results from its use. No
license isgranted by implication or otherwise under any patent orpatent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in thispublication are subjectto change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts are not authorizedfor useas criticalcomponents in life support devices orsystems without express
written approval ofSGS-THOMSON Microelectonics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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BUH515FP
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